CN100462415C - 高速阻挡层抛光组合物 - Google Patents

高速阻挡层抛光组合物 Download PDF

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Publication number
CN100462415C
CN100462415C CNB2004100118194A CN200410011819A CN100462415C CN 100462415 C CN100462415 C CN 100462415C CN B2004100118194 A CNB2004100118194 A CN B2004100118194A CN 200410011819 A CN200410011819 A CN 200410011819A CN 100462415 C CN100462415 C CN 100462415C
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CN
China
Prior art keywords
solution
salt
derivative compound
guanidine
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB2004100118194A
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English (en)
Chinese (zh)
Other versions
CN1616574A (zh
Inventor
卞锦儒
胡凯
李煦
刘振东
J·匡西
M·R·万哈尼赫姆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN1616574A publication Critical patent/CN1616574A/zh
Application granted granted Critical
Publication of CN100462415C publication Critical patent/CN100462415C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB2004100118194A 2003-09-25 2004-09-22 高速阻挡层抛光组合物 Expired - Lifetime CN100462415C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/670,534 2003-09-25
US10/670,534 US7300480B2 (en) 2003-09-25 2003-09-25 High-rate barrier polishing composition

Publications (2)

Publication Number Publication Date
CN1616574A CN1616574A (zh) 2005-05-18
CN100462415C true CN100462415C (zh) 2009-02-18

Family

ID=34313856

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100118194A Expired - Lifetime CN100462415C (zh) 2003-09-25 2004-09-22 高速阻挡层抛光组合物

Country Status (6)

Country Link
US (1) US7300480B2 (enExample)
EP (1) EP1520893B1 (enExample)
JP (1) JP4761748B2 (enExample)
KR (1) KR101109002B1 (enExample)
CN (1) CN100462415C (enExample)
TW (1) TWI354016B (enExample)

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US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US20060205219A1 (en) * 2005-03-08 2006-09-14 Baker Arthur R Iii Compositions and methods for chemical mechanical polishing interlevel dielectric layers
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US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
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US7842192B2 (en) * 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
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US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
US7935242B2 (en) * 2006-08-21 2011-05-03 Micron Technology, Inc. Method of selectively removing conductive material
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SG183744A1 (en) * 2007-08-20 2012-09-27 Advanced Tech Materials Composition and method for removing ion-implanted photoresist
CN101497765A (zh) * 2008-01-30 2009-08-05 安集微电子（上海）有限公司 一种化学机械抛光液
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2011014840A (ja) * 2009-07-06 2011-01-20 Adeka Corp Ｃｍｐ用研磨組成物
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
MY163071A (en) * 2011-06-29 2017-08-15 Sanyo Chemical Ind Ltd Electronic material polishing liquid
CN102304327A (zh) * 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
SG10201907142VA (en) * 2014-03-18 2019-09-27 Fujifilm Electronic Materials Usa Inc Etching composition
US10683439B2 (en) 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
CN113913115B (zh) * 2021-10-20 2022-09-06 博力思(天津)电子科技有限公司 一种硅通孔阻挡层碱性抛光液
CN115651543A (zh) * 2022-09-06 2023-01-31 苏州博来纳润电子材料有限公司 一种硅片粗抛光液组合物及其应用
CN118291951B (zh) * 2024-04-08 2025-02-25 合肥安德科铭半导体科技有限公司 一种有机小分子抑制剂及其在薄膜沉积中的应用方法
KR20250166844A (ko) 2024-04-08 2025-11-28 허페이 애드쳄 세미-테크. 코., 엘티디. 유기 소분자 억제제 및 박막 증착에서의 적용방법

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CN1398939A (zh) * 2001-07-23 2003-02-26 不二见株式会社 抛光组合物及使用它的抛光方法

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Also Published As

Publication number Publication date
US7300480B2 (en) 2007-11-27
CN1616574A (zh) 2005-05-18
US20050066585A1 (en) 2005-03-31
EP1520893A1 (en) 2005-04-06
TW200514843A (en) 2005-05-01
EP1520893B1 (en) 2011-05-18
KR101109002B1 (ko) 2012-02-08
KR20050030577A (ko) 2005-03-30
JP2005167199A (ja) 2005-06-23
TWI354016B (en) 2011-12-11
JP4761748B2 (ja) 2011-08-31

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