JP2005167199A5 - - Google Patents
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- Publication number
- JP2005167199A5 JP2005167199A5 JP2004279440A JP2004279440A JP2005167199A5 JP 2005167199 A5 JP2005167199 A5 JP 2005167199A5 JP 2004279440 A JP2004279440 A JP 2004279440A JP 2004279440 A JP2004279440 A JP 2004279440A JP 2005167199 A5 JP2005167199 A5 JP 2005167199A5
- Authority
- JP
- Japan
- Prior art keywords
- guanidine
- weight
- formamidine
- acetamidine
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 17
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- OQLZINXFSUDMHM-UHFFFAOYSA-N Acetamidine Chemical compound CC(N)=N OQLZINXFSUDMHM-UHFFFAOYSA-N 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000004475 Arginine Substances 0.000 claims description 6
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 6
- 150000002357 guanidines Chemical class 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 150000002466 imines Chemical class 0.000 claims description 5
- -1 hydrazine derivative compound Chemical class 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- UBDZFAGVPPMTIT-UHFFFAOYSA-N 2-aminoguanidine;hydron;chloride Chemical compound [Cl-].NC(N)=N[NH3+] UBDZFAGVPPMTIT-UHFFFAOYSA-N 0.000 claims description 3
- NYYSPVRERVXMLJ-UHFFFAOYSA-N 4,4-difluorocyclohexan-1-one Chemical compound FC1(F)CCC(=O)CC1 NYYSPVRERVXMLJ-UHFFFAOYSA-N 0.000 claims description 3
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 3
- 239000006061 abrasive grain Substances 0.000 claims description 3
- XPOLVIIHTDKJRY-UHFFFAOYSA-N acetic acid;methanimidamide Chemical compound NC=N.CC(O)=O XPOLVIIHTDKJRY-UHFFFAOYSA-N 0.000 claims description 3
- 150000001483 arginine derivatives Chemical class 0.000 claims description 3
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 claims description 3
- ZZTURJAZCMUWEP-UHFFFAOYSA-N diaminomethylideneazanium;hydrogen sulfate Chemical compound NC(N)=N.OS(O)(=O)=O ZZTURJAZCMUWEP-UHFFFAOYSA-N 0.000 claims description 3
- WCQOBLXWLRDEQA-UHFFFAOYSA-N ethanimidamide;hydrochloride Chemical compound Cl.CC(N)=N WCQOBLXWLRDEQA-UHFFFAOYSA-N 0.000 claims description 3
- DXTIKTAIYCJTII-UHFFFAOYSA-N guanidine acetate Chemical compound CC([O-])=O.NC([NH3+])=N DXTIKTAIYCJTII-UHFFFAOYSA-N 0.000 claims description 3
- 229960000789 guanidine hydrochloride Drugs 0.000 claims description 3
- NDEMNVPZDAFUKN-UHFFFAOYSA-N guanidine;nitric acid Chemical compound NC(N)=N.O[N+]([O-])=O.O[N+]([O-])=O NDEMNVPZDAFUKN-UHFFFAOYSA-N 0.000 claims description 3
- PJJJBBJSCAKJQF-UHFFFAOYSA-N guanidinium chloride Chemical compound [Cl-].NC(N)=[NH2+] PJJJBBJSCAKJQF-UHFFFAOYSA-N 0.000 claims description 3
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 claims description 2
- OWRCNXZUPFZXOS-UHFFFAOYSA-N 1,3-diphenylguanidine Chemical compound C=1C=CC=CC=1NC(=N)NC1=CC=CC=C1 OWRCNXZUPFZXOS-UHFFFAOYSA-N 0.000 claims description 2
- XCXKNNGWSDYMMS-UHFFFAOYSA-N 2-methyl-1-nitroguanidine Chemical compound CNC(N)=N[N+]([O-])=O XCXKNNGWSDYMMS-UHFFFAOYSA-N 0.000 claims description 2
- JINCAMJWMDRBNM-UHFFFAOYSA-N Cl.Cl.CC(C)(C)C(N)=N Chemical compound Cl.Cl.CC(C)(C)C(N)=N JINCAMJWMDRBNM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 7
- 239000007800 oxidant agent Substances 0.000 claims 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000003112 inhibitor Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- UJTTUOLQLCQZEA-UHFFFAOYSA-N 9h-fluoren-9-ylmethyl n-(4-hydroxybutyl)carbamate Chemical compound C1=CC=C2C(COC(=O)NCCCCO)C3=CC=CC=C3C2=C1 UJTTUOLQLCQZEA-UHFFFAOYSA-N 0.000 claims 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- PFLUPZGCTVGDLV-UHFFFAOYSA-N acetone azine Chemical compound CC(C)=NN=C(C)C PFLUPZGCTVGDLV-UHFFFAOYSA-N 0.000 claims 1
- 150000003863 ammonium salts Chemical class 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical compound NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 claims 1
- 239000008139 complexing agent Substances 0.000 claims 1
- 150000004696 coordination complex Chemical class 0.000 claims 1
- SWRGUMCEJHQWEE-UHFFFAOYSA-N ethanedihydrazide Chemical compound NNC(=O)C(=O)NN SWRGUMCEJHQWEE-UHFFFAOYSA-N 0.000 claims 1
- XZBIXDPGRMLSTC-UHFFFAOYSA-N formohydrazide Chemical compound NNC=O XZBIXDPGRMLSTC-UHFFFAOYSA-N 0.000 claims 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- WFJRIDQGVSJLLH-UHFFFAOYSA-N methyl n-aminocarbamate Chemical compound COC(=O)NN WFJRIDQGVSJLLH-UHFFFAOYSA-N 0.000 claims 1
- 229920002635 polyurethane Polymers 0.000 claims 1
- 239000004814 polyurethane Substances 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229940083094 guanine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/670,534 | 2003-09-25 | ||
| US10/670,534 US7300480B2 (en) | 2003-09-25 | 2003-09-25 | High-rate barrier polishing composition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005167199A JP2005167199A (ja) | 2005-06-23 |
| JP2005167199A5 true JP2005167199A5 (enExample) | 2007-11-08 |
| JP4761748B2 JP4761748B2 (ja) | 2011-08-31 |
Family
ID=34313856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004279440A Expired - Fee Related JP4761748B2 (ja) | 2003-09-25 | 2004-09-27 | 高速バリア研磨組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7300480B2 (enExample) |
| EP (1) | EP1520893B1 (enExample) |
| JP (1) | JP4761748B2 (enExample) |
| KR (1) | KR101109002B1 (enExample) |
| CN (1) | CN100462415C (enExample) |
| TW (1) | TWI354016B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000039843A1 (en) * | 1998-12-25 | 2000-07-06 | Hitachi Chemical Company, Ltd. | Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate |
| US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
| US6971945B2 (en) * | 2004-02-23 | 2005-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step polishing solution for chemical mechanical planarization |
| US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
| US20060110923A1 (en) * | 2004-11-24 | 2006-05-25 | Zhendong Liu | Barrier polishing solution |
| US7427362B2 (en) * | 2005-01-26 | 2008-09-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Corrosion-resistant barrier polishing solution |
| US20060205219A1 (en) * | 2005-03-08 | 2006-09-14 | Baker Arthur R Iii | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
| US7842193B2 (en) * | 2005-09-29 | 2010-11-30 | Fujifilm Corporation | Polishing liquid |
| US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
| TW200734436A (en) * | 2006-01-30 | 2007-09-16 | Fujifilm Corp | Metal-polishing liquid and chemical mechanical polishing method using the same |
| US20070176142A1 (en) * | 2006-01-31 | 2007-08-02 | Fujifilm Corporation | Metal- polishing liquid and chemical-mechanical polishing method using the same |
| US7842192B2 (en) * | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
| JP2007214518A (ja) * | 2006-02-13 | 2007-08-23 | Fujifilm Corp | 金属用研磨液 |
| US7902072B2 (en) * | 2006-02-28 | 2011-03-08 | Fujifilm Corporation | Metal-polishing composition and chemical-mechanical polishing method |
| US8025811B2 (en) * | 2006-03-29 | 2011-09-27 | Intel Corporation | Composition for etching a metal hard mask material in semiconductor processing |
| US7935242B2 (en) * | 2006-08-21 | 2011-05-03 | Micron Technology, Inc. | Method of selectively removing conductive material |
| US20080276543A1 (en) * | 2007-05-08 | 2008-11-13 | Thomas Terence M | Alkaline barrier polishing slurry |
| SG183744A1 (en) * | 2007-08-20 | 2012-09-27 | Advanced Tech Materials | Composition and method for removing ion-implanted photoresist |
| CN101497765A (zh) * | 2008-01-30 | 2009-08-05 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| US8071479B2 (en) * | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| JP2011014840A (ja) * | 2009-07-06 | 2011-01-20 | Adeka Corp | Ｃｍｐ用研磨組成物 |
| US8431490B2 (en) * | 2010-03-31 | 2013-04-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
| US8568610B2 (en) * | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
| MY163071A (en) * | 2011-06-29 | 2017-08-15 | Sanyo Chemical Ind Ltd | Electronic material polishing liquid |
| CN102304327A (zh) * | 2011-07-05 | 2012-01-04 | 复旦大学 | 一种基于金属Co的抛光工艺的抛光液 |
| CN103773244B (zh) * | 2012-10-17 | 2017-08-11 | 安集微电子（上海）有限公司 | 一种碱性化学机械抛光液 |
| SG10201907142VA (en) * | 2014-03-18 | 2019-09-27 | Fujifilm Electronic Materials Usa Inc | Etching composition |
| US10683439B2 (en) | 2018-03-15 | 2020-06-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
| US11111435B2 (en) * | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
| CN113913115B (zh) * | 2021-10-20 | 2022-09-06 | 博力思(天津)电子科技有限公司 | 一种硅通孔阻挡层碱性抛光液 |
| CN115651543A (zh) * | 2022-09-06 | 2023-01-31 | 苏州博来纳润电子材料有限公司 | 一种硅片粗抛光液组合物及其应用 |
| CN118291951B (zh) * | 2024-04-08 | 2025-02-25 | 合肥安德科铭半导体科技有限公司 | 一种有机小分子抑制剂及其在薄膜沉积中的应用方法 |
| KR20250166844A (ko) | 2024-04-08 | 2025-11-28 | 허페이 애드쳄 세미-테크. 코., 엘티디. | 유기 소분자 억제제 및 박막 증착에서의 적용방법 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB679561A (en) | 1949-04-07 | 1952-09-17 | Poor & Co | Buffing and polishing compositions and method of preparation |
| JPS5144138B2 (enExample) | 1972-08-21 | 1976-11-26 | ||
| US5281749A (en) * | 1989-11-28 | 1994-01-25 | Henkel Kommanditgesellschaft Auf Aktien | Process for reducing the residual content of free alkylating agent in aqeous solutions of amphoteric or zwitterionic surfactants |
| US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| WO1996038262A1 (en) | 1995-06-01 | 1996-12-05 | Rodel, Inc. | Compositions for polishing silicon wafers and methods |
| US5860848A (en) | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
| US5676587A (en) | 1995-12-06 | 1997-10-14 | International Business Machines Corporation | Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride |
| US6001730A (en) | 1997-10-20 | 1999-12-14 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers |
| US5985748A (en) | 1997-12-01 | 1999-11-16 | Motorola, Inc. | Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process |
| US20020019202A1 (en) | 1998-06-10 | 2002-02-14 | Thomas Terence M. | Control of removal rates in CMP |
| EP1137056B1 (en) | 1998-08-31 | 2013-07-31 | Hitachi Chemical Company, Ltd. | Abrasive liquid for metal and method for polishing |
| JP4095731B2 (ja) | 1998-11-09 | 2008-06-04 | 株式会社ルネサステクノロジ | 半導体装置の製造方法及び半導体装置 |
| TWI224128B (en) | 1998-12-28 | 2004-11-21 | Hitachi Chemical Co Ltd | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same |
| JP4644323B2 (ja) * | 1999-04-28 | 2011-03-02 | Ａｇｃセイミケミカル株式会社 | 有機アルカリを含有する半導体用研磨剤 |
| TWI227726B (en) * | 1999-07-08 | 2005-02-11 | Eternal Chemical Co Ltd | Chemical-mechanical abrasive composition and method |
| CN1107097C (zh) | 1999-07-28 | 2003-04-30 | 长兴化学工业股份有限公司 | 化学机械研磨组合物及方法 |
| IL147234A0 (en) * | 1999-08-13 | 2002-08-14 | Cabot Microelectronics Corp | Polishing system with stopping compound and method of its use |
| WO2001017006A1 (en) | 1999-08-26 | 2001-03-08 | Hitachi Chemical Company, Ltd. | Polishing compound for chemimechanical polishing and polishing method |
| JP4505891B2 (ja) * | 1999-09-06 | 2010-07-21 | Ｊｓｒ株式会社 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
| US6656842B2 (en) | 1999-09-22 | 2003-12-02 | Applied Materials, Inc. | Barrier layer buffing after Cu CMP |
| EP1094506A3 (en) * | 1999-10-18 | 2004-03-03 | Applied Materials, Inc. | Capping layer for extreme low dielectric constant films |
| US20020025762A1 (en) | 2000-02-16 | 2002-02-28 | Qiuliang Luo | Biocides for polishing slurries |
| US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
| US6872329B2 (en) * | 2000-07-28 | 2005-03-29 | Applied Materials, Inc. | Chemical mechanical polishing composition and process |
| JP2002050595A (ja) | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
| JP3816743B2 (ja) * | 2000-11-24 | 2006-08-30 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| JP3825246B2 (ja) | 2000-11-24 | 2006-09-27 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| CN100378145C (zh) * | 2001-06-21 | 2008-04-02 | 花王株式会社 | 研磨液组合物 |
| US6485355B1 (en) | 2001-06-22 | 2002-11-26 | International Business Machines Corporation | Method to increase removal rate of oxide using fixed-abrasive |
| JP2003023072A (ja) * | 2001-07-06 | 2003-01-24 | Hitachi Ltd | 半導体装置の製造方法および半導体装置の製造装置 |
| SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| JP2003068683A (ja) * | 2001-08-22 | 2003-03-07 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| US6638326B2 (en) | 2001-09-25 | 2003-10-28 | Ekc Technology, Inc. | Compositions for chemical mechanical planarization of tantalum and tantalum nitride |
| KR101005304B1 (ko) | 2002-03-25 | 2011-01-05 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 탄탈 배리어 제거 용액 |
| US7300602B2 (en) | 2003-01-23 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier metal polishing solution |
| US6916742B2 (en) * | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
| US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7300603B2 (en) | 2003-08-05 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
| US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
| US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
-
2003
- 2003-09-25 US US10/670,534 patent/US7300480B2/en not_active Expired - Lifetime
-
2004
- 2004-09-07 TW TW093127065A patent/TWI354016B/zh not_active IP Right Cessation
- 2004-09-14 EP EP04255560A patent/EP1520893B1/en not_active Expired - Lifetime
- 2004-09-22 CN CNB2004100118194A patent/CN100462415C/zh not_active Expired - Lifetime
- 2004-09-23 KR KR1020040076320A patent/KR101109002B1/ko not_active Expired - Lifetime
- 2004-09-27 JP JP2004279440A patent/JP4761748B2/ja not_active Expired - Fee Related
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