CN1643660A - 钽阻挡层去除溶液 - Google Patents
钽阻挡层去除溶液 Download PDFInfo
- Publication number
- CN1643660A CN1643660A CNA038064243A CN03806424A CN1643660A CN 1643660 A CN1643660 A CN 1643660A CN A038064243 A CNA038064243 A CN A038064243A CN 03806424 A CN03806424 A CN 03806424A CN 1643660 A CN1643660 A CN 1643660A
- Authority
- CN
- China
- Prior art keywords
- solution
- percentage
- tantalum
- weight
- guanidine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 66
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 49
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000005498 polishing Methods 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000000203 mixture Substances 0.000 claims abstract description 24
- 239000003112 inhibitor Substances 0.000 claims abstract description 20
- 239000007800 oxidant agent Substances 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 20
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 150000002357 guanidines Chemical class 0.000 claims abstract description 11
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229940083094 guanine derivative acting on arteriolar smooth muscle Drugs 0.000 claims abstract description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229920002635 polyurethane Polymers 0.000 claims abstract description 7
- 239000004814 polyurethane Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000428 dust Substances 0.000 claims description 11
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 150000003481 tantalum Chemical class 0.000 claims description 6
- UBDZFAGVPPMTIT-UHFFFAOYSA-N 2-aminoguanidine;hydron;chloride Chemical compound [Cl-].NC(N)=N[NH3+] UBDZFAGVPPMTIT-UHFFFAOYSA-N 0.000 claims description 4
- XPOLVIIHTDKJRY-UHFFFAOYSA-N acetic acid;methanimidamide Chemical compound NC=N.CC(O)=O XPOLVIIHTDKJRY-UHFFFAOYSA-N 0.000 claims description 4
- ZZTURJAZCMUWEP-UHFFFAOYSA-N diaminomethylideneazanium;hydrogen sulfate Chemical compound NC(N)=N.OS(O)(=O)=O ZZTURJAZCMUWEP-UHFFFAOYSA-N 0.000 claims description 4
- DXTIKTAIYCJTII-UHFFFAOYSA-N guanidine acetate Chemical compound CC([O-])=O.NC([NH3+])=N DXTIKTAIYCJTII-UHFFFAOYSA-N 0.000 claims description 4
- 229960000789 guanidine hydrochloride Drugs 0.000 claims description 4
- PJJJBBJSCAKJQF-UHFFFAOYSA-N guanidinium chloride Chemical group [Cl-].NC(N)=[NH2+] PJJJBBJSCAKJQF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011324 bead Substances 0.000 claims description 3
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 claims description 3
- NDEMNVPZDAFUKN-UHFFFAOYSA-N guanidine;nitric acid Chemical compound NC(N)=N.O[N+]([O-])=O.O[N+]([O-])=O NDEMNVPZDAFUKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000008139 complexing agent Substances 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000003628 erosive effect Effects 0.000 description 14
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000002002 slurry Substances 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 7
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 7
- 229960004198 guanidine Drugs 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 230000000844 anti-bacterial effect Effects 0.000 description 4
- 239000003899 bactericide agent Substances 0.000 description 4
- -1 carbonamidine Chemical compound 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- JOELYYRJYYLNRR-UHFFFAOYSA-N 2,3,5-trihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1O JOELYYRJYYLNRR-UHFFFAOYSA-N 0.000 description 1
- GLDQAMYCGOIJDV-UHFFFAOYSA-N 2,3-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1O GLDQAMYCGOIJDV-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 150000000703 Cerium Chemical class 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229950004394 ditiocarb Drugs 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 1
- APLYTANMTDCWTA-UHFFFAOYSA-L magnesium;phthalate Chemical compound [Mg+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O APLYTANMTDCWTA-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical class [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3272—Urea, guanidine or derivatives thereof
-
- H—ELECTRICITY
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Abstract
用于去除钽阻挡层材料的化学机械平坦化溶液。该溶液包含0至25重量百分比的氧化剂，0至15重量百分比的非铁金属金属抑制剂和0至20重量百分比该非铁金属的配位剂，0.01至12重量百分比选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽去除剂，0至5重量百分比的研磨剂，0至15重量百分比选自聚合物颗粒和聚合物包覆颗粒的全部颗粒，而余量为水。该溶液具有至少3比1的氮化钽相对TEOS的选择性，如使用垂直于晶片的小于20.7kPa的微孔聚氨酯抛光垫板压力所测。
Description
发明背景
本发明涉及半导体晶片材料的化学机械平坦化(CMP)且更具体地，本发明涉及用于在存在下层电介质的情况下去除半导体晶片阻挡层材料的CMP组合物和方法。
典型地，半导体晶片具有硅晶片和包含多重沟槽的电介质层，该沟槽在电介质层内排列形成电路互连图案。这些图案的排列通常具有金属镶嵌结构或双重金属镶嵌结构。利用阻挡层覆盖该具有图案的电介质层而用金属层覆盖该阻挡层。该金属层具有至少足够的厚度以便使金属充满该图案化的沟槽从而形成电路互连。
CMP工艺通常包括多个平坦化步骤。例如，第一步从下面的阻挡电介质层上除去金属层。该第一步抛光可去除金属层，并在晶片上留下具有充满金属的沟槽的光滑平坦表面，该沟槽可提供与该抛光表面平齐的电路互连。该第一步抛光步骤倾向于以相对高的速率去除过剩的互连金属例如铜。例如，Lee等人在欧洲专利公开1 072 662A1中公开了使用胍作为研磨加速剂用于提高研磨剂组合物的电介质去除速率。该第一步去除之后，第二步抛光能够除去残留在该半导体晶片上的阻挡层。第二步抛光可从半导体晶片的下层电介质层上除去该阻挡层从而在该电介质层上提供平坦的抛光表面。
遗憾的是，CMP工艺通常会导致不需要的金属从电路互连上的过度去除或凹陷。这种凹陷既可以由第一步抛光产生也可以由第二步抛光产生。超过许可水平的凹陷会在电路互连中引起尺度损失。电路互连中的这些薄弱区域会减弱电信号并损害后续的双重金属镶嵌结构的加工。
阻挡层典型为金属，金属合金或金属间化合物，例如钽或氮化钽。该阻挡层形成可阻止晶片内各层之间的迁移和扩散的层。例如，阻挡层可防止互连金属例如铜或银扩散到临近的电介质中。阻挡层材料必需能抵抗大多数酸的腐蚀，从而可以抵抗用于CMP的流体抛光组合物的溶解作用。此外，这些阻挡层表现出一定的韧性，可抵抗CMP浆料中的研磨颗粒和固定掩模垫的研磨去除。
侵蚀是指通过CMP工艺去除一些电介质层时在电介质层的表面上产生的不良凹陷。发生在沟槽中的金属附近的侵蚀会在电路互连中产生尺度缺陷。以类似于凹陷的方式，这些缺陷会造成电路互连所传输的电信号的减弱并损害随后的双重金属镶嵌结构的加工。阻挡层的去除速率与金属互连或电介质层的去除速率的比值被称为选择比。
大多数阻挡层材料难于通过CMP去除，因为该阻挡层可抵抗研磨和溶解的去除。典型的阻挡层去除浆料要求在流体抛光组合物中具有高的研磨剂浓度，例如至少7.5重量百分比，以便除去阻挡层材料。但是具有这些高研磨剂浓度的浆料会对该电介质层造成有害的侵蚀并产生铜互连的凹陷，侵蚀和划痕。除此之外，高的研磨剂浓度会导致低k电介质层从半导体晶片上的剥落或分层。
对于可选择性去除钽阻挡层材料的改良CMP组合物存在尚未满足的需求。特别的，存在对可选择性去除钽阻挡层材料同时具有减小的电介质侵蚀和减少的金属互连凹陷，侵蚀和划痕的CMP组合物的需求。此外，希望去除钽阻挡层材料而不会使低k电介质层从半导体晶片上剥落。
发明综述
本发明提供了用于去除钽阻挡层材料的化学机械平坦化溶液，该溶液包含0至25重量百分比的氧化剂，0至15重量百分比的非铁金属抑制剂，0至20重量百分比的非铁金属配位剂，0.01至12重量百分比选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽去除剂，0至5重量百分比的研磨剂，0至15重量百分比选自聚合物颗粒和聚合物包覆颗粒的全部颗粒，和余量的水，而且该溶液具有至少3比1的氮化钽相对TEOS的选择性，如使用垂直于晶片测量的小于20.7kPa(3psi)的微孔聚氨酯抛光垫压力所测。
此外，本发明提供了用于从半导体晶片上去除钽阻挡层材料的化学机械平坦化方法，该方法包括：使晶片衬底与抛光溶液接触，该晶片衬底包含钽阻挡层材料和电介质，该抛光溶液包含选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽试剂；和使用抛光垫对该晶片衬底进行抛光以便以一定去除速率从该晶片衬底上除去钽阻挡层材料，该去除速率大于对电介质的去除速率并以埃每分钟表示。
发明详述
对于去除钽阻挡层材料该溶液和方法提供了意想不到的选择性。该溶液依靠选自甲脒，甲脒盐，甲脒衍生物，例如胍，胍衍生物，胍盐和它们的混合物的钽阻挡层去除剂来选择性去除钽阻挡层材料。该溶液可选择性去除阻挡层材料同时具有减小的电介质侵蚀和减小的金属互连例如铜的凹陷，侵蚀和划痕。此外，该溶液可除去钽阻挡层材料而不会使低k电介质层从半导体晶片上剥落或分层。
该溶液依靠阻挡层去除剂来除去钽阻挡层材料。对本说明书而言，钽阻挡层指钽，含钽合金，钽基合金和钽金属间化合物。对于钽，钽基合金和钽金属间化合物，例如钽的碳化物，氮化物和氧化物，该溶液具有特别的效力。对于从具有图案的半导体晶片上去除钽阻挡层该浆料最为有效。
该钽阻挡层去除剂可以是甲脒，甲脒盐，甲脒衍生物例如胍，胍衍生物，胍盐或它们的混合物。这些钽去除剂显出对钽阻挡层材料具有强烈的亲合力。这种对钽的亲合力可以在使用有限的研磨剂或(可选的)无需使用任何研磨剂的情况下提高该阻挡层的去除速率。这种有限的研磨剂使用允许该抛光以大于对电介质和金属互连的速率去除该钽阻挡层。特别有效的胍衍生物和盐包括盐酸胍，硫酸胍，盐酸氨基胍，乙酸胍，碳酸胍，硝酸胍，甲脒，甲脒亚磺酸，甲脒乙酸盐和它们的混合物。优选地，该溶液包含0.01至12重量百分比的钽去除剂。本说明以重量百分比表示所有的浓度。最优选地，该溶液包含0.1至10重量百分比的钽去除剂并且对于大多数应用，介于0.2至6重量百分比之间的钽去除剂的浓度可提供足够的阻挡层去除速率。
在包含余量的水的溶液中该钽去除剂可在宽的pH范围上提供效力。该溶液有用的pH范围可以至少为2至12。此外，该溶液最优选的依靠余量的去离子水来限制附带的杂质。
可选地，该溶液可包含0至25重量百分比的氧化剂。优选地，该可选的氧化剂为0至15重量百分比。该氧化剂在帮助该溶液去除酸性pH水平可能形成的钽氧化物膜时特别有效，特别地，这些膜可以在5或者5以下的pH水平形成。该氧化剂可以是许多氧化剂中的至少一种，例如过氧化氢(H2O2)，单过硫酸盐，碘酸盐，过邻苯二甲酸镁，过乙酸和其它过酸，过硫酸盐，溴酸盐，高碘酸盐，硝酸盐，铁盐，铈盐，Mn(III)，Mn(IV)和Mn(VI)盐，银盐，Cu盐，铬盐，钴盐，卤素，次氯酸盐和它们的混合物。此外，通常优选使用氧化剂化合物的混合物。优选的阻挡层金属抛光浆料包含过氧化氢氧化剂。当该抛光浆料包含不稳定氧化剂例如过氧化氢时，通常最优选在使用时将该氧化剂混入浆料。
典型的非铁金属互连包括：铜，铜基合金，银和银基合金。可选地，该溶液可包含0至15重量百分比的抑制剂以便控制静态侵蚀或其它去除机制对互连的去除速率。调节抑制剂的浓度通过保护金属不受静态侵蚀可调整该互连金属的去除速率。优选地，该溶液包含可选的0至10重量百分比的抑制剂。该抑制剂可以由抑制剂的混合物组成。唑类抑制剂对铜和银互连特别有效。典型的唑类抑制剂包括苯并三唑(BTA)，甲苯三唑，咪唑和其它唑类化合物。最优选地，该浆料包含0.02至5重量百分比的全部的唑类以便抑制铜或银互连的静态侵蚀。对于铜和银BTA是特别有效的抑制剂。
除抑制剂以外，该溶液可以包含0至20重量百分比的非铁金属的配位剂。当其存在时，该配位剂可通过溶解该非铁金属互连来阻止形成的金属离子的沉淀。最优选地，该溶液包含0至10重量百分比的非铁金属的配位剂。配位剂的实例包括乙酸，柠檬酸，乙酰乙酸乙酯，羟基乙酸，乳酸，苹果酸，草酸，水扬酸，二乙基二硫代氨基甲酸钠，丁二酸，酒石酸，巯基乙酸，甘氨酸，丙氨酸，天冬氨酸，乙二胺，三甲基二胺，丙二酸，谷氨酸(gluteric acid)，3-羟基丁酸，丙酸，邻苯二甲酸，间苯二甲酸，3-羟基水杨酸，3，5-二羟基水杨酸，棓酸，葡萄糖酸，邻苯二酚，连苯三酚，丹宁酸，它们的盐和混合物。优选地，该配位剂选自乙酸，柠檬酸，乙酰乙酸乙酯，羟基乙酸，乳酸，苹果酸，草酸和它们的混合物。最优选地，该配位剂是柠檬酸。
钽去除剂的使用有利于使用低研磨剂浓度如低于5重量百分比的抛光。对于包含小于5重量百分比研磨剂的抛光溶液，该抛光可以容易地以比电介质的去除速率大至少三倍的速率(以埃每分钟表示)去除钽阻挡层材料。对于包含小于1重量百分比研磨剂的抛光溶液，该抛光可以容易地以比该电介质的去除速率(以埃每分钟表示)大至少五倍的速率去除钽阻挡层材料。典型的研磨剂包括金刚石颗粒和金属氧化物，硼化物，碳化物，氮化物和它们的混合物。最优选地，如果存在，该研磨剂则选自氧化铝，氧化铈和二氧化硅以及它们的混合物。为得到极度减小的电介质侵蚀速率，该溶液优选包含小于0.09重量百分比的研磨剂且最优选包含小于0.05重量百分比的研磨剂。虽然该溶液在包含零浓度水平的研磨剂时仍有效，但是少量的研磨剂有利于抛光碎屑的去除。为减少划痕，该溶液优选包含平均颗粒尺寸小于200nm，且最优选小于100nm的研磨剂。
为了去除碎屑，该溶液可包含总量为0至15重量百分比的聚合物或聚合物包覆颗粒。这些“聚合物”颗粒可促进碎屑的去除而不会产生电介质侵蚀或互连的磨损，凹陷或侵蚀的有害影响。最优选地，该溶液包含总量为0到10重量百分比的聚合物或聚合物包覆颗粒。表面活性剂或聚合物例如聚乙烯吡咯烷酮可以与研磨剂结合来提供该聚合物包覆颗粒。
该抛光溶液还可以包含均平剂如氯化铵来控制该互连金属的表面光洁度。除此之外，该溶液可选包含杀菌剂以便限制生物污染。例如NeoloneTM M-50杀菌剂丙二醇中的2-甲基-4-异噻唑啉-3-酮(Rohmand Haas Company)对于许多应用提供了有效的杀菌剂。
如使用小于20.7kPa的垂直于晶片测量的微孔聚氨酯抛光垫压力所测，该溶液提供了至少3比1的氮化钽相对TEOS的选择性。适合于测定选择性的特定抛光垫是Politex的微孔聚氨酯抛光垫。优选地，该溶液可提供至少5比1的氮化钽相对TEOS的选择性，如使用小于20.7kPa的垂直于晶片测量的微孔聚氨酯抛光垫压力所测；且最优选地，该范围是至少10比1。而且该溶液可提供超过100比1的氮化钽相对TEOS的选择性。调节pH，氧化剂浓度和钽去除剂的浓度可调整钽阻挡层的去除速率。调节抑制剂，氧化剂，配位剂以及均平剂的浓度可以调整互连金属的刻蚀速率。
实施例
在实施例中数字代表本发明的实施例而字母代表对照实施例。此外，所有的示例溶液均包含0.01重量百分比的NeoloneTM M-50杀菌剂丙二醇中的2-甲基-4-异噻唑啉-3-酮和0.01重量百分比的氯化铵光亮剂。
实施例1
这个试验测量了下列层的去除速率：TaN阻挡层，Ta阻挡层，TEOS电介质层，通过处理原硅酸四乙酯前体得到的低k电介质形式的二氧化硅，和铜。特别地，该试验测定了特定的钽去除剂，氧化剂和抑制剂在第二步抛光操作中的效果。使用Strausbaugh抛光机利用Politex聚氨酯抛光垫(Rodel，Inc.)在约3psi(20.7kPa)的下压力条件和200cc/min的抛光液流速，120RPM的工作台转速和114RPM的托架转速下对试样进行平坦化。使用KOH或HNO3将该抛光溶液的pH调节至9且所有的溶液均包含去离子水。此外，抛光溶液包含1重量百分比平均颗粒尺寸为50nm的二氧化硅研磨剂。
表1
| 溶液 | 添加剂 | Wt％ | BTAWt％ | H2O2Wt％ | TaNA/min | TEOSA/min | CuA/min | TaA/min |
| A | 0 | 0.1 | 25，11 | 30 | 146 | |||
| 1 | GAA | 3.0 | 0.2 | 1055 | 17 | 143 | ||
| 2 | GS | 3.0 | 0.2 | 1610 | 40 | 170 | 1340 | |
| 3 | GHCL | 2.5 | 0.2 | 1758 | 70 | 68 | ||
| 4 | GHCL | 2.5 | 0.2 | 0.8 | 601 | 27 | 601 | |
| 5 | GHCL | 2.5 | 0.2 | 1.8 | 563 | 24 | 195 | |
| 6 | GHCL | 2.5 | 0.2 | 2.8 | 565 | 26 | 165 | |
| 7 | GHCL | 2.0 | 0.8 | 2200 | 57 | -19 | 1935 | |
| 8 | GHCL | 1.0 | 0.8 | 2203 | 88 | 193 | 2034 | |
| 9 | AGHCL | 2.5 | 0.8 | 1763 | 66 | 204 | ||
| 10 | GHCL | 2.0 | 0.05 | 1221 | 56 | 75 | 1765 | |
| 11 | FS | 3.0 | 0.20 | 1123，1153 | 142 | |||
| 12 | FA | 3.0 | 0.20 | 2197 | -5 | 99 |
GAA＝乙酸胍，GS＝硫酸胍，GHCL＝盐酸胍，AGHCL＝氨基盐酸胍，BTA＝苯并三唑，TaN＝氮化钽，TEOS＝原硅酸四乙酯(电介质)，Cu＝铜(金属)，Ta＝钽阻挡层，FS＝甲脒亚磺酸而FA＝甲脒乙酸盐。
上表显示胍和甲脒化合物可提供钽阻挡层材料相对于电介质和互连金属的高的去除选择性。此外，该测试证实了当使用相同的抛光溶液进行抛光时Ta和TaN的去除速率的大小接近——参见溶液2，7，8和10。然而溶液4至6的过氧化氢氧化剂在该测试的pH下可减小TaN的去除速率。然而该速率远大于使用不含胍或甲脒化合物的对照溶液A获得的去除速率。
该数据说明该胍和甲脒阻挡层去除剂可以在所有的情形下提供至少1000埃每分钟的TaN阻挡层去除速率。表1中所记录的溶液7和10证明腐蚀抑制剂BTA可提高阻挡层的去除速率。具体地，当BTA的浓度从0.05重量百分比增加到0.8重量百分比时，TaN的去除速率从1221埃每分钟提高到2200埃每分钟。
实施例2
实施例2的测试使用实施例1的溶液和设备，但该溶液不含任何二氧化硅研磨剂添加物。
表2
| 溶液 | 添加剂 | Wt％ | BTAWt％ | TaNA/min | TEOSA/min | CuA/min |
| 13 | GHCL | 1.0 | 0.05 | 1072 | -1 | 110 |
| 14 | GHCL | 1.0 | 0.20 | 1051 | -1 | 49 |
| 15 | GHCL | 0.5 | 0.20 | 1373 | -2 | 12 |
| 16 | GHCL | 1.0 | 0.20 | 1587 | -3 | 9 |
| 17 | GHCL | 3.0 | 0.20 | 1042 | -4 | 6 |
上面的数据表明从溶液中去除研磨剂后可以将电介质的去除速率减小到无法检测出的去除速率水平。这些溶液具有至少100比1的TaN相对TEOS的选择性。
实施例3
实施例3的测试使用实施例1的溶液和设备，但该溶液包含不同的pH水平。
表3
| 溶液 | 添加剂 | Wt％ | pH | TaNA/min | TEOSA/min | CuA/min |
| 18 | GHCL | 1.0 | 11 | 1166 | -4 | 32 |
| 19 | GHCL | 1.0 | 7 | 211 | -4 | 37 |
| 20 | GHCL | 1.0 | 5 | 10 | -4 | 26 |
| 21 | GHCL | 1.0 | 3 | 9 | -3 | 29 |
这些数据说明了该抛光溶液在高pH水平下的效用。在低pH水平下，该溶液需要添加氧化剂，如下面的实施例4所示。
实施例4
该实施例说明了向低pH溶液中加入氧化剂后的效力。具体地，该测试依靠2psi(13.8kPa)的下压力，120RPM的工作台转速，114RPM的托架转速和200cc/min的浆料流速，包含0.6重量百分比H2O2且pH为3至5的溶液。
表4
| 溶液 | H2O2Wt％ | GHCWt％ | pH | 氧化硅Wt％ | BTA | TaA/min | TaNA/min | CuA/min |
| B | 0.6 | 0 | 3 | 2％ | 0.10％ | 45 | 183 | 132 |
| 22 | 0.6 | 0.5 | 3 | 2％ | 0.10％ | ＞1000 | 2060 | 77 |
| C | 0.6 | 0 | 5 | 2％ | 0.10％ | 29 | 107 | 148 |
| 23 | 0.6 | 0.5 | 5 | 2％ | 0.10％ | ＞1000 | 1537 | 107 |
| 24 | 0.6 | 1 | 5 | 2％ | 0.10％ | ＞1000 | 1753 | 109 |
上面的数据说明通过向该低pH溶液中添加氧化剂H2O2可以显著提高去除速率。
实施例5
实施例5的测试使用实施例1的溶液和设备，但使用表5中所制定的抛光条件。该溶液的pH为8.0，包含水，0.20％BTA，1％GHCL，0.5％柠檬酸，0.01％Neolone M50和0.01％平均颗粒尺寸为12nm的胶态二氧化硅。
表5
| 下压力Psi | 下压力kPa | 工作台RPM | 托架RPM | 流速Ml/min | TaNA/min | TEOSA/min | CuA/min |
| (1) | 6.9 | 120 | 114 | 200 | 745 | 3 | 0-5 |
| (2) | 13.8 | 120 | 114 | 200 | 1658 | 4 | 28 |
| (3) | 20.7 | 120 | 114 | 200 | 2619 | 5 | 57 |
表4中所记录的试验表明在使用1psi至3psi(6.9至20.7kPa)的低的下压力下，胍化合物能以足够的去除速率和选择性去除金属，TaN，和已知的阻挡层金属。此外，0.01重量百分比的胶态二氧化硅会产生不显著的去除速率变化，但会清除残存的TaN残留物以便减少TaN表面层的不均匀去除。
对本说明书而言，术语电介质是指介电常数为k的半导体材料，且该材料包括低k和超低k电介质材料。该工艺可去除钽阻挡层材料而对通常的电介质和低k电介质材料影响很小。由于该溶液在包含少量或不含研磨剂时可在低的压力(即小于21.7kPa)下提供有效的阻挡层去除速率和高的钽选择性，这有利于使用低电介质侵蚀速率的抛光。该溶液和方法对于阻止包括如下的多个晶片组分的侵蚀是非常好的：多孔或无孔低k电介质，有机和无机低k电介质，以化学记号SiwCxOyHz表示的有机硅酸盐玻璃(OSG)，其中w，x，y，z代表原子数，氟硅酸盐玻璃(FSG)，碳掺杂氧化物(CDO)，TEOS，衍生自原硅酸四乙酯的氧化硅，和任何硬质掩模材料，例如TEOS，SiwCxOyHz，SiCH，SixNy，SixCyNz，和SiC。
优选地，该抛光溶液包含小于5重量百分比的研磨剂以便限制侵蚀而且该抛光能够以比电介质的去除速率(以埃每分钟表示)大至少3倍的速率去除该钽阻挡层材料。最优选地，该抛光溶液包含小于1重量百分比的研磨剂以便进一步限制侵蚀而且该抛光能够以比电介质的去除速率(以埃每分钟表示)大至少5倍的速率去除该钽阻挡层材料。
对于去除钽阻挡层材料，如钽，氮化钽和氧化钽，该溶液和方法提供了优异的选择性。该溶液可选择性去除钽阻挡层材料并具有减小的电介质侵蚀。例如，该溶液可以去除钽阻挡层而不会产生可觉察的TEOS损失，而且不会使低k电介质层剥落或分层。除此之外，该溶液可减少铜互连的凹陷，侵蚀和划痕。
Claims (10)
1.用于去除钽阻挡层材料的化学机械平坦化溶液，该溶液包含0至25重量百分比的氧化剂，0至15重量百分比的非铁金属抑制剂，0至20重量百分比该非铁金属的配位剂，0.01至12重量百分比选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽去除剂，0至5重量百分比的研磨剂，0至15重量百分比选自聚合物颗粒和聚合物包覆颗粒的全部颗粒，和余量的水，该溶液具有至少3比1的氮化钽相对TEOS的选择性，如使用垂直于晶片测量的小于20.7kPa的微孔聚氨酯抛光垫压力所测。
2.权利要求1的溶液，其中该钽去除剂的含量为0.1至10重量百分比。
3.权利要求1的溶液，其中该抑制剂包括唑类抑制剂。
4.权利要求1的溶液，其中该钽去除剂选自盐酸胍，硫酸胍，盐酸氨基胍，乙酸胍，碳酸胍，硝酸胍，甲脒，甲脒亚磺酸，甲脒乙酸盐和它们的混合物。
5.用于去除钽阻挡层材料的化学机械平坦化溶液，该溶液包含0至15重量百分比的氧化剂，0至10重量百分比的非铁金属抑制剂，0至10重量百分比该非铁金属的配位剂，0.1至10重量百分比选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽去除剂，0至0.09重量百分比的研磨剂，0至10重量百分比选自聚合物颗粒和聚合物包覆颗粒的全部颗粒，和余量的水。
6.权利要求5的溶液，其中该钽去除剂选自盐酸胍，硫酸胍，盐酸氨基胍，乙酸胍，碳酸胍，硝酸胍，甲脒，甲脒亚磺酸，甲脒乙酸盐和它们的混合物，且该钽去除剂的含量是0.2至6重量百分比。
7.权利要求5的溶液，其中该抑制剂是总量为0.02至5重量百分比的唑类抑制剂。
8.用于从半导体晶片上去除钽阻挡层材料的化学机械平坦化方法，该方法包括如下步骤：
使晶片衬底与抛光溶液接触，该晶片衬底包含钽阻挡层材料和电介质，该抛光溶液包含选自甲脒，甲脒盐，甲脒衍生物，胍衍生物，胍盐和它们的混合物的钽去除剂；和
使用抛光垫对该晶片衬底进行抛光以便以一定去除速率从该晶片衬底上除去钽阻挡层材料，该去除速率大于对电介质的去除速率并以埃每分钟表示。
9.权利要求8的方法，其中该抛光溶液包含小于5重量百分比的研磨剂而且该抛光能够以比以埃每分钟表示的电介质的去除速率大至少3倍的速率去除该钽阻挡层材料。
10.权利要求8的方法，其中该抛光溶液包含小于1重量百分比的研磨剂而且该抛光能够以比以埃每分钟表示的电介质的去除速率大至少5倍的速率去除该钽阻挡层材料。
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| WO2008116379A1 (fr) * | 2007-03-23 | 2008-10-02 | Anji Microelectronics (Shanghai) Co., Ltd. | Solution de nettoyage et son utilisation |
| CN101657531B (zh) * | 2007-03-23 | 2012-08-22 | 安集微电子（上海）有限公司 | 一种清洗液及其应用 |
| WO2008122204A1 (fr) * | 2007-04-06 | 2008-10-16 | Anji Microelectronics (Shanghai) Co., Ltd. | Liquide de polissage chimico-mecanique pour silicium polycristallin |
| CN101652445B (zh) * | 2007-04-06 | 2013-12-11 | 安集微电子（上海）有限公司 | 多晶硅化学机械抛光液 |
| TWI426125B (zh) * | 2007-11-20 | 2014-02-11 | Anji Microelectronics Co Ltd | 清洗液及其應用 |
| WO2009070969A1 (fr) * | 2007-11-22 | 2009-06-11 | Anji Microelectronics (Shanghai) Co., Ltd | Liquide de polissage chimico-mécanique pour le polissage du polysilicium |
| WO2011072495A1 (zh) * | 2009-12-18 | 2011-06-23 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN103834306A (zh) * | 2012-11-22 | 2014-06-04 | 安集微电子（上海）有限公司 | 一种用于硅通孔平坦化的化学机械抛光液 |
| CN103834306B (zh) * | 2012-11-22 | 2017-08-11 | 安集微电子（上海）有限公司 | 一种用于硅通孔平坦化的化学机械抛光液 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030181345A1 (en) | 2003-09-25 |
| KR101005304B1 (ko) | 2011-01-05 |
| JP4560294B2 (ja) | 2010-10-13 |
| TW200305637A (en) | 2003-11-01 |
| EP1490897A1 (en) | 2004-12-29 |
| US7491252B2 (en) | 2009-02-17 |
| CN1319132C (zh) | 2007-05-30 |
| WO2003083920A1 (en) | 2003-10-09 |
| DE60311569D1 (de) | 2007-03-22 |
| JP2005522031A (ja) | 2005-07-21 |
| EP1490897B1 (en) | 2007-01-31 |
| TWI248970B (en) | 2006-02-11 |
| DE60311569T2 (de) | 2007-11-15 |
| KR101020613B1 (ko) | 2011-03-09 |
| KR20100084198A (ko) | 2010-07-23 |
| AU2003218389A1 (en) | 2003-10-13 |
| KR20040104956A (ko) | 2004-12-13 |
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