JP4758354B2 - 基体上に炭化ケイ素層を形成する方法 - Google Patents

基体上に炭化ケイ素層を形成する方法 Download PDF

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JP4758354B2
JP4758354B2 JP2006539688A JP2006539688A JP4758354B2 JP 4758354 B2 JP4758354 B2 JP 4758354B2 JP 2006539688 A JP2006539688 A JP 2006539688A JP 2006539688 A JP2006539688 A JP 2006539688A JP 4758354 B2 JP4758354 B2 JP 4758354B2
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silicon carbide
residual stress
control variable
silicon
gas
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JP2007516355A (ja
JP2007516355A5 (https=
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メーラン メーレガニー，
クリスチャン エー． ゾーマン，
シャオ−アン フー，
ジェレミー エル． ダンニング，
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ケース ウエスタン リザーブ ユニバーシティ
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006539688A 2003-11-18 2004-11-05 基体上に炭化ケイ素層を形成する方法 Expired - Fee Related JP4758354B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/716,006 2003-11-18
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition
PCT/US2004/037064 WO2005049884A2 (en) 2003-11-18 2004-11-05 Method for depositing silicon carbide and ceramic films

Publications (3)

Publication Number Publication Date
JP2007516355A JP2007516355A (ja) 2007-06-21
JP2007516355A5 JP2007516355A5 (https=) 2008-01-24
JP4758354B2 true JP4758354B2 (ja) 2011-08-24

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US (3) US7261919B2 (https=)
EP (1) EP1690287A2 (https=)
JP (1) JP4758354B2 (https=)
KR (1) KR20060123343A (https=)
CN (1) CN1906735A (https=)
AU (1) AU2004291847A1 (https=)
CA (1) CA2546081A1 (https=)
IL (1) IL175640A0 (https=)
WO (1) WO2005049884A2 (https=)

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US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
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CN104681413A (zh) * 2015-02-25 2015-06-03 苏州工业园区纳米产业技术研究院有限公司 低应力多晶硅薄膜的制作方法
JP2018511708A (ja) * 2015-03-12 2018-04-26 イビデン株式会社 ＣＶＤ−ＳｉＣ材の製造方法
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
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US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
CN107924100B (zh) 2015-08-31 2021-03-23 伊英克公司 电子地擦除绘图装置
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CN110345031B (zh) * 2018-04-03 2020-12-11 中国科学院理化技术研究所 一种舰艇发电系统
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Publication number Publication date
EP1690287A2 (en) 2006-08-16
USRE42887E1 (en) 2011-11-01
CA2546081A1 (en) 2005-06-02
WO2005049884A3 (en) 2005-11-17
WO2005049884A2 (en) 2005-06-02
CN1906735A (zh) 2007-01-31
JP2007516355A (ja) 2007-06-21
US7261919B2 (en) 2007-08-28
AU2004291847A1 (en) 2005-06-02
US20110001143A1 (en) 2011-01-06
US20050106320A1 (en) 2005-05-19
IL175640A0 (en) 2006-09-05
KR20060123343A (ko) 2006-12-01
US8153280B2 (en) 2012-04-10

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