KR20060123343A - 탄화규소 막 및 세라믹 막의 증착 방법 - Google Patents

탄화규소 막 및 세라믹 막의 증착 방법 Download PDF

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Publication number
KR20060123343A
KR20060123343A KR1020067011987A KR20067011987A KR20060123343A KR 20060123343 A KR20060123343 A KR 20060123343A KR 1020067011987 A KR1020067011987 A KR 1020067011987A KR 20067011987 A KR20067011987 A KR 20067011987A KR 20060123343 A KR20060123343 A KR 20060123343A
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South Korea
Prior art keywords
silicon carbide
reaction chamber
silicon
flow rate
substrate
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KR1020067011987A
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English (en)
Korean (ko)
Inventor
메란 메레가니
크리스챤 에이 조만
샤오 안 푸
제레미 엘 듀닝
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케이스 웨스턴 리저브 유니버시티
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Publication of KR20060123343A publication Critical patent/KR20060123343A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020067011987A 2003-11-18 2004-11-05 탄화규소 막 및 세라믹 막의 증착 방법 Withdrawn KR20060123343A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/716,006 2003-11-18
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition

Publications (1)

Publication Number Publication Date
KR20060123343A true KR20060123343A (ko) 2006-12-01

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ID=34574334

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KR1020067011987A Withdrawn KR20060123343A (ko) 2003-11-18 2004-11-05 탄화규소 막 및 세라믹 막의 증착 방법

Country Status (9)

Country Link
US (3) US7261919B2 (https=)
EP (1) EP1690287A2 (https=)
JP (1) JP4758354B2 (https=)
KR (1) KR20060123343A (https=)
CN (1) CN1906735A (https=)
AU (1) AU2004291847A1 (https=)
CA (1) CA2546081A1 (https=)
IL (1) IL175640A0 (https=)
WO (1) WO2005049884A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR20130074704A (ko) * 2011-12-26 2013-07-04 엘지이노텍 주식회사 증착 장치
KR20130077488A (ko) * 2011-12-29 2013-07-09 엘지이노텍 주식회사 탄화규소 증착 방법
KR20190113619A (ko) * 2018-03-28 2019-10-08 도쿄엘렉트론가부시키가이샤 붕소계 막의 성막 방법 및 성막 장치

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DE102009040785A1 (de) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
CN102986017B (zh) 2010-05-28 2015-09-16 恩特格林斯公司 高表面电阻率静电吸盘
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
JP5817127B2 (ja) * 2011-01-21 2015-11-18 株式会社Sumco 半導体基板及びその製造方法
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
CN104619881A (zh) * 2012-08-17 2015-05-13 株式会社Ihi 耐热复合材料的制造方法及制造装置
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
TWI595112B (zh) 2012-10-23 2017-08-11 蘭姆研究公司 次飽和之原子層沉積及保形膜沉積
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
KR101469713B1 (ko) * 2012-12-06 2014-12-05 연세대학교 산학협력단 경사형 C/SiC 코팅막 형성 방법 및 장치
JP6249815B2 (ja) * 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
CN104681413A (zh) * 2015-02-25 2015-06-03 苏州工业园区纳米产业技术研究院有限公司 低应力多晶硅薄膜的制作方法
JP2018511708A (ja) * 2015-03-12 2018-04-26 イビデン株式会社 ＣＶＤ−ＳｉＣ材の製造方法
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
CN107924100B (zh) 2015-08-31 2021-03-23 伊英克公司 电子地擦除绘图装置
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
CN110345031B (zh) * 2018-04-03 2020-12-11 中国科学院理化技术研究所 一种舰艇发电系统
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130074704A (ko) * 2011-12-26 2013-07-04 엘지이노텍 주식회사 증착 장치
KR20130077488A (ko) * 2011-12-29 2013-07-09 엘지이노텍 주식회사 탄화규소 증착 방법
KR20190113619A (ko) * 2018-03-28 2019-10-08 도쿄엘렉트론가부시키가이샤 붕소계 막의 성막 방법 및 성막 장치

Also Published As

Publication number Publication date
EP1690287A2 (en) 2006-08-16
USRE42887E1 (en) 2011-11-01
CA2546081A1 (en) 2005-06-02
WO2005049884A3 (en) 2005-11-17
WO2005049884A2 (en) 2005-06-02
CN1906735A (zh) 2007-01-31
JP4758354B2 (ja) 2011-08-24
JP2007516355A (ja) 2007-06-21
US7261919B2 (en) 2007-08-28
AU2004291847A1 (en) 2005-06-02
US20110001143A1 (en) 2011-01-06
US20050106320A1 (en) 2005-05-19
IL175640A0 (en) 2006-09-05
US8153280B2 (en) 2012-04-10

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