IL175640A0 - Method for depositing silicon carbide and ceramic films - Google Patents

Method for depositing silicon carbide and ceramic films

Info

Publication number
IL175640A0
IL175640A0 IL175640A IL17564006A IL175640A0 IL 175640 A0 IL175640 A0 IL 175640A0 IL 175640 A IL175640 A IL 175640A IL 17564006 A IL17564006 A IL 17564006A IL 175640 A0 IL175640 A0 IL 175640A0
Authority
IL
Israel
Prior art keywords
silicon carbide
depositing silicon
ceramic films
films
ceramic
Prior art date
Application number
IL175640A
Other languages
English (en)
Original Assignee
Univ Case Western Reserve
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Case Western Reserve filed Critical Univ Case Western Reserve
Publication of IL175640A0 publication Critical patent/IL175640A0/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL175640A 2003-11-18 2006-05-16 Method for depositing silicon carbide and ceramic films IL175640A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/716,006 US7261919B2 (en) 2003-11-18 2003-11-18 Silicon carbide and other films and method of deposition
PCT/US2004/037064 WO2005049884A2 (en) 2003-11-18 2004-11-05 Method for depositing silicon carbide and ceramic films

Publications (1)

Publication Number Publication Date
IL175640A0 true IL175640A0 (en) 2006-09-05

Family

ID=34574334

Family Applications (1)

Application Number Title Priority Date Filing Date
IL175640A IL175640A0 (en) 2003-11-18 2006-05-16 Method for depositing silicon carbide and ceramic films

Country Status (9)

Country Link
US (3) US7261919B2 (https=)
EP (1) EP1690287A2 (https=)
JP (1) JP4758354B2 (https=)
KR (1) KR20060123343A (https=)
CN (1) CN1906735A (https=)
AU (1) AU2004291847A1 (https=)
CA (1) CA2546081A1 (https=)
IL (1) IL175640A0 (https=)
WO (1) WO2005049884A2 (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563633B2 (en) * 2006-08-25 2009-07-21 Robert Bosch Gmbh Microelectromechanical systems encapsulation process
TWI475594B (zh) 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
US20100083762A1 (en) * 2008-10-02 2010-04-08 Evoy Stephane Fabrication and use of submicron wide suspended structures
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
DE102009040785A1 (de) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
CN102986017B (zh) 2010-05-28 2015-09-16 恩特格林斯公司 高表面电阻率静电吸盘
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
JP5817127B2 (ja) * 2011-01-21 2015-11-18 株式会社Sumco 半導体基板及びその製造方法
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
KR102026206B1 (ko) * 2011-12-26 2019-09-27 엘지이노텍 주식회사 증착 장치
KR101916289B1 (ko) * 2011-12-29 2019-01-24 엘지이노텍 주식회사 탄화규소 증착 방법
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
CN104619881A (zh) * 2012-08-17 2015-05-13 株式会社Ihi 耐热复合材料的制造方法及制造装置
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
TWI595112B (zh) 2012-10-23 2017-08-11 蘭姆研究公司 次飽和之原子層沉積及保形膜沉積
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
KR101469713B1 (ko) * 2012-12-06 2014-12-05 연세대학교 산학협력단 경사형 C/SiC 코팅막 형성 방법 및 장치
JP6249815B2 (ja) * 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
CN104681413A (zh) * 2015-02-25 2015-06-03 苏州工业园区纳米产业技术研究院有限公司 低应力多晶硅薄膜的制作方法
JP2018511708A (ja) * 2015-03-12 2018-04-26 イビデン株式会社 ＣＶＤ−ＳｉＣ材の製造方法
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
CN107924100B (zh) 2015-08-31 2021-03-23 伊英克公司 电子地擦除绘图装置
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
JP7049883B2 (ja) * 2018-03-28 2022-04-07 東京エレクトロン株式会社 ボロン系膜の成膜方法および成膜装置
CN110345031B (zh) * 2018-04-03 2020-12-11 中国科学院理化技术研究所 一种舰艇发电系统
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560589A (en) 1982-09-22 1985-12-24 Shin-Etsu Chemical Co., Ltd. Method for providing a coating layer of silicon carbide on substrate surface
JPS59128281A (ja) 1982-12-29 1984-07-24 信越化学工業株式会社 炭化けい素被覆物の製造方法
US4971851A (en) 1984-02-13 1990-11-20 Hewlett-Packard Company Silicon carbide film for X-ray masks and vacuum windows
JP2534525B2 (ja) * 1987-12-19 1996-09-18 富士通株式会社 β−炭化シリコン層の製造方法
JP2823276B2 (ja) * 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
DE69023478T2 (de) * 1990-03-05 1996-06-20 Ibm Verfahren zum Herstellen von Siliziumkarbidschichten mit vorherbestimmter Spannungskraft.
JP2556621B2 (ja) * 1990-12-11 1996-11-20 ホーヤ株式会社 炭化ケイ素膜の成膜方法
JPH051380A (ja) * 1991-06-24 1993-01-08 Hoya Corp 炭化ケイ素の成膜方法
JPH05335216A (ja) * 1992-05-29 1993-12-17 Fujitsu Ltd Ｘ線マスク及びその製造方法
US5296258A (en) * 1992-09-30 1994-03-22 Northern Telecom Limited Method of forming silicon carbide
US5415126A (en) 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
AU7667994A (en) * 1993-08-17 1995-03-14 Aktsionernoe Obschestvo "Russkoe Obschestvo Prikladnoi Elektroniki" Method of producing layers of silicon carbide and an associated product
US5480695A (en) * 1994-08-10 1996-01-02 Tenhover; Michael A. Ceramic substrates and magnetic data storage components prepared therefrom
US5800878A (en) 1996-10-24 1998-09-01 Applied Materials, Inc. Reducing hydrogen concentration in pecvd amorphous silicon carbide films
JP3607454B2 (ja) * 1997-03-31 2005-01-05 Ｈｏｙａ株式会社 Ｘ線マスク用ｘ線透過膜、ｘ線マスクブランク及びｘ線マスク並びにこれらの製造方法並びに炭化珪素膜の研磨方法
US6103590A (en) * 1997-12-12 2000-08-15 Texas Instruments Incorporated SiC patterning of porous silicon
US6189766B1 (en) * 1998-07-10 2001-02-20 Northrop Grumman Corporation Zero stress bonding of silicon carbide to diamond
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide
US6764958B1 (en) * 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films

Also Published As

Publication number Publication date
EP1690287A2 (en) 2006-08-16
USRE42887E1 (en) 2011-11-01
CA2546081A1 (en) 2005-06-02
WO2005049884A3 (en) 2005-11-17
WO2005049884A2 (en) 2005-06-02
CN1906735A (zh) 2007-01-31
JP4758354B2 (ja) 2011-08-24
JP2007516355A (ja) 2007-06-21
US7261919B2 (en) 2007-08-28
AU2004291847A1 (en) 2005-06-02
US20110001143A1 (en) 2011-01-06
US20050106320A1 (en) 2005-05-19
KR20060123343A (ko) 2006-12-01
US8153280B2 (en) 2012-04-10

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