JP4751897B2 - 放熱基板を具えた発光ダイオード装置及びその製造方法 - Google Patents
放熱基板を具えた発光ダイオード装置及びその製造方法 Download PDFInfo
- Publication number
- JP4751897B2 JP4751897B2 JP2008001083A JP2008001083A JP4751897B2 JP 4751897 B2 JP4751897 B2 JP 4751897B2 JP 2008001083 A JP2008001083 A JP 2008001083A JP 2008001083 A JP2008001083 A JP 2008001083A JP 4751897 B2 JP4751897 B2 JP 4751897B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- heat dissipation
- light
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims description 71
- 230000017525 heat dissipation Effects 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 230000008719 thickening Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 40
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005253 cladding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 239000011265 semifinished product Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
該放熱基板は高い熱伝導係数を具えた材料で形成され、並びに中心部と、該中心部を囲む反射部を包含し、且つ該反射部の上面の法線が該中心部の上面の法線との間に鋭角をなす。
該発光ダイオードチップは該中心部の上面に一体に接続され、直接該中心部の上面に接続される一層の基材と、該基材上に形成され並びに光電効果で光を発生する一層の発光膜と、該発光膜に接続されると共にオームコンタクトを形成し該発光膜に対して電気エネルギーを提供する一組の電極ユニットとを具えている。
該チップ設置ステップでは、基材と、該基材上に形成され並びに光電効果で光を発生する発光膜と、該発光膜とオームコンタクトを形成して該発光膜に対して電気エネルギーを提供する電極ユニットと、を具えた発光ダイオードチップを、該発光膜が暫時ダイを固定する支持基板に向くように、該支持基板に固定する。
該犠牲層形成ステップでは、該支持基板上に該発光ダイオードチップの側周面を囲み且つ除去され得る犠牲層を形成し、且つ該犠牲層の厚さを該発光ダイオードチップの上端から該支持基板の方向に連続して漸減させる。
該放熱基板形成ステップでは、高い熱伝導係数の材料を該発光ダイオードチップの基材の底面より該犠牲層表面に向けて、上面が実質的に該基材底面に平行である放熱基板を形成する。
該犠牲層除去のステップでは、該犠牲層を除去し、該放熱基板を具えた発光ダイオード装置を完成する。
11 底板 43 電極ユニット
111 凹孔 431 電極
12 発光ダイオードチップ 2’放熱基板を具えた発光ダイオード装置
121 電極
13 接合材 421’ 第1クラッド層
2 放熱基板を具えた発光ダイオード装置
3 放熱基板 424’ 透明導電層
31 底材 43’ 電極ユニット
32 反射鏡 51 チップ製造ステップ
33 中心部 53 犠牲層形成ステップ
34 反射部 54 放熱基板形成ステップ
4 発光ダイオードチップ
41 基材 55 犠牲層除去ステップ
42 発光膜 61 支持基板
421 第1クラッド層 62 犠牲層
422 第2クラッド層
423 活性層
Claims (6)
- 放熱基板を具えた発光ダイオード装置の製造方法において、
チップ設置ステップであって、基材と、該基材上に形成され並びに光電効果で光を発生する発光膜と、該発光膜とオームコンタクトを形成して該発光膜に対して電気エネルギーを提供する電極ユニットと、を具えた発光ダイオードチップを、該発光膜が暫時ダイを固定する支持基板に向くように、該支持基板に固定する、上記チップ設置ステップと、
犠牲層形成ステップであって、該支持基板上に該発光ダイオードチップの側周面を囲み且つ除去され得る犠牲層を形成し、且つ該犠牲層の厚さを該発光ダイオードチップの上端から該支持基板の方向に連続して漸減させる、上記犠牲層形成ステップと、
放熱基板形成ステップであって、高い熱伝導係数の材料を該発光ダイオードチップの基材の底面より該犠牲層表面に向けて、上面が実質的に該基材底面に平行である放熱基板を形成する、上記放熱基板形成ステップと、
犠牲層除去のステップであって、該犠牲層を除去し、該放熱基板を具えた発光ダイオード装置を得る、該犠牲層除去のステップと、
を包含することを特徴とする、放熱基板を具えた発光ダイオード装置の製造方法。 - 請求項1記載の放熱基板を具えた発光ダイオード装置の製造方法において、前処理ステップとしてのチップ製造ステップを更に包含し、それは、基材、該基材上に形成され並びに光電効果で光を発生する発光膜と、該発光膜と接続され並びにオームコンタクトを形成して該発光膜に対して電気エネルギーを提供する電極ユニットと、を包含した発光ダイオードチップを製造するステップであることを特徴とする、放熱基板を具えた発光ダイオード装置の製造方法。
- 請求項1記載の放熱基板を具えた発光ダイオード装置の製造方法において、該犠牲層は該発光ダイオードチップの上端から該支持基板の外周に向けて厚さが漸減して滑らかな凹円弧面をなすことを特徴とする、放熱基板を具えた発光ダイオード装置及の製造方法。
- 請求項1記載の放熱基板を具えた発光ダイオード装置の製造方法において、該放熱基板形成ステップで、高い反射率を具えた材料で該発光ダイオードチップの基材の底面と該犠牲層の表面より上向きに反射鏡を形成し、更に高い熱伝導率を具えた材料で該反射鏡より上向きに増厚し底材を形成し、該反射鏡と該底材で該放熱基板を構成することを特徴とする、放熱基板を具えた発光ダイオード装置及の製造方法。
- 請求項4記載の放熱基板を具えた発光ダイオード装置の製造方法において、該反射鏡は相対的に高い光反射屈折率の材料と相対的に低い光反射屈折率の材料を交錯するように積み重ねた少なくとも二層の膜体で構成したことを特徴とする、放熱基板を具えた発光ダイオード装置及の製造方法。
- 請求項4記載の放熱基板を具えた発光ダイオード装置の製造方法において、該底材は電気めっき増厚方式で形成したことを特徴とする、放熱基板を具えた発光ダイオード装置及の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096141685 | 2007-11-05 | ||
TW096141685A TWI397193B (zh) | 2007-11-05 | 2007-11-05 | Light emitting diode chip element with heat dissipation substrate and method for making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009117788A JP2009117788A (ja) | 2009-05-28 |
JP4751897B2 true JP4751897B2 (ja) | 2011-08-17 |
Family
ID=40587207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008001083A Expired - Fee Related JP4751897B2 (ja) | 2007-11-05 | 2008-01-08 | 放熱基板を具えた発光ダイオード装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8048692B2 (ja) |
JP (1) | JP4751897B2 (ja) |
KR (1) | KR100996760B1 (ja) |
TW (1) | TWI397193B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110062470A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Reduced angular emission cone illumination leds |
US20120056228A1 (en) * | 2010-09-07 | 2012-03-08 | Phostek, Inc. | Led chip modules, method for packaging the led chip modules, and moving fixture thereof |
US8415704B2 (en) | 2010-09-22 | 2013-04-09 | Ut-Battelle, Llc | Close-packed array of light emitting devices |
AU2010101247B4 (en) * | 2010-11-12 | 2013-11-21 | 2Wp International Pty Ltd | Dual mode ratchet pruners |
US20120193671A1 (en) * | 2011-02-01 | 2012-08-02 | Chi Mei Lighting Technology Corp. | Light-emitting diode device and method for manufacturing the same |
CN102956796A (zh) * | 2011-07-15 | 2013-03-06 | 财团法人成大研究发展基金会 | 发光二极管晶粒模块、其封装方法及其移取治具 |
CN102244164B (zh) * | 2011-07-15 | 2013-11-06 | 财团法人成大研究发展基金会 | 发光二极管晶粒模块、其封装方法及其移取治具 |
TWI479696B (zh) * | 2011-11-09 | 2015-04-01 | Huga Optotech Inc | 發光二極體裝置 |
JP6128448B2 (ja) * | 2012-03-02 | 2017-05-17 | パナソニックIpマネジメント株式会社 | 半導体発光装置 |
US8664681B2 (en) * | 2012-07-06 | 2014-03-04 | Invensas Corporation | Parallel plate slot emission array |
US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9178123B2 (en) * | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
JP2014127560A (ja) * | 2012-12-26 | 2014-07-07 | Kyocera Connector Products Corp | 半導体発光素子用ホルダ、半導体発光素子モジュール、照明器具、及び半導体発光素子用ホルダの製造方法 |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
KR20150006727A (ko) * | 2013-07-09 | 2015-01-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
KR20160096318A (ko) * | 2015-02-05 | 2016-08-16 | 현대자동차주식회사 | 전기자동차의 충전 인디케이터 |
JP6858494B2 (ja) * | 2016-05-25 | 2021-04-14 | シチズン電子株式会社 | Led照明装置 |
US10439114B2 (en) * | 2017-03-08 | 2019-10-08 | Cree, Inc. | Substrates for light emitting diodes and related methods |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63107483U (ja) * | 1986-12-29 | 1988-07-11 | ||
US6583444B2 (en) * | 1997-02-18 | 2003-06-24 | Tessera, Inc. | Semiconductor packages having light-sensitive chips |
KR19980069199A (ko) * | 1997-02-27 | 1998-10-26 | 배순훈 | 광효율을 향상시킬 수 있는 박막형 광로 조절장치 및 그 제조 방법 |
JP2002124705A (ja) * | 2000-10-17 | 2002-04-26 | Citizen Electronics Co Ltd | 発光ダイオードとその製造方法 |
KR100489042B1 (ko) | 2002-08-30 | 2005-05-11 | 엘지이노텍 주식회사 | 고출력 led를 위한 역피라미드형 플립 칩 |
JP4164006B2 (ja) * | 2003-02-17 | 2008-10-08 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP2007142479A (ja) * | 2003-03-14 | 2007-06-07 | Sumitomo Electric Ind Ltd | 半導体装置 |
TWI231055B (en) * | 2004-04-28 | 2005-04-11 | Highlink Thecnhology Corp | Method of fabricating gallium nitride-based light emitting diode and structure thereof |
FR2875948B1 (fr) * | 2004-09-28 | 2006-12-08 | Commissariat Energie Atomique | Composant d'encapsulation de micro-systeme electromecaniques integres et procede de realisation du composant |
KR100610650B1 (ko) | 2005-06-17 | 2006-08-09 | (주) 파이오닉스 | 엘이디 패키지 및 그 제조방법 |
CN101138104B (zh) * | 2005-06-23 | 2011-08-24 | 伦斯勒工业学院 | 利用短波长led和下变频材料产生白光的封装设计 |
US7501299B2 (en) * | 2005-11-14 | 2009-03-10 | Palo Alto Research Center Incorporated | Method for controlling the structure and surface qualities of a thin film and product produced thereby |
JP2007335799A (ja) * | 2006-06-19 | 2007-12-27 | Toyoda Gosei Co Ltd | 発光装置 |
-
2007
- 2007-11-05 TW TW096141685A patent/TWI397193B/zh not_active IP Right Cessation
-
2008
- 2008-01-08 JP JP2008001083A patent/JP4751897B2/ja not_active Expired - Fee Related
- 2008-01-25 US US12/010,457 patent/US8048692B2/en not_active Expired - Fee Related
- 2008-05-02 KR KR1020080041418A patent/KR100996760B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20090114934A1 (en) | 2009-05-07 |
KR100996760B1 (ko) | 2010-11-25 |
TWI397193B (zh) | 2013-05-21 |
TW200921933A (en) | 2009-05-16 |
KR20090046672A (ko) | 2009-05-11 |
JP2009117788A (ja) | 2009-05-28 |
US8048692B2 (en) | 2011-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4751897B2 (ja) | 放熱基板を具えた発光ダイオード装置及びその製造方法 | |
EP2107620B1 (en) | Light emitting device with LED chip | |
US20210257528A1 (en) | Light emitting diode | |
US8455895B2 (en) | LED-based light source utilizing asymmetric conductors | |
JP5999929B2 (ja) | 発光素子パッケージ及びこれを利用した照明システム | |
JP6312999B2 (ja) | 発光素子及びこれを備えた照明システム | |
JP2016103652A (ja) | 効率的なledアレイ | |
JP3872490B2 (ja) | 発光素子収納パッケージ、発光装置および照明装置 | |
WO2013121708A1 (ja) | 発光装置およびその製造方法 | |
US8487339B2 (en) | Light-emitting diode chip package body and method for manufacturing same | |
CN103180975A (zh) | 半导体发光二极管芯片、发光器件及其制造方法 | |
US8445920B1 (en) | Light emitting diode | |
KR101799450B1 (ko) | 발광 소자 및 발광 소자 패키지 | |
CN102054905A (zh) | 具有导热层的发光二极管芯片 | |
CN101436632B (zh) | 具有散热基板的发光二极管芯片组件及其制作方法 | |
JP4659515B2 (ja) | 発光素子搭載用基板,発光素子収納用パッケージ,発光装置および照明装置 | |
TW201442283A (zh) | 發光二極體裝置及其製作方法 | |
TWI688128B (zh) | 發光二極體晶片級封裝結構及直下式背光模組 | |
KR20220004001A (ko) | 시트 조명 및 이의 제조방법 | |
JP5205806B2 (ja) | Ledチップ固定用基板およびその製造方法 | |
KR102042465B1 (ko) | 광원모듈 및 이를 구비한 조명 시스템 | |
US20210313500A1 (en) | Optoelectronic semiconductor chip, optoelectronic component and method of manufacturing an optoelectronic component | |
KR20130037044A (ko) | 발광 소자 패키지 및 이를 구비한 라이트 유닛 | |
JP2014107502A (ja) | 発光装置 | |
KR20140096185A (ko) | 발광 다이오드 패키지 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101130 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110222 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110322 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110510 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110523 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4751897 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140527 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D03 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |