JP4751101B2 - 温度センサ - Google Patents
温度センサ Download PDFInfo
- Publication number
- JP4751101B2 JP4751101B2 JP2005133806A JP2005133806A JP4751101B2 JP 4751101 B2 JP4751101 B2 JP 4751101B2 JP 2005133806 A JP2005133806 A JP 2005133806A JP 2005133806 A JP2005133806 A JP 2005133806A JP 4751101 B2 JP4751101 B2 JP 4751101B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature sensor
- thin film
- portions
- thermistor chip
- film thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 claims description 62
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 42
- 239000010408 film Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- -1 steatite Inorganic materials 0.000 description 1
Images
Description
2 スプロケット
3 帯状部
4a 端末部分
4b 細幅部分
4c リード部
4d 湾曲部
5 薄膜サーミスタチップ
5a 絶縁基板
5b 感熱膜
5c 電極層
6 絶縁被覆層
Claims (6)
- 一対の幅広の端末部分の先端側に、当該端末部分よりも幅狭な細幅部分をそれぞれ備え、前記一対の細幅部分の先端側に薄膜サーミスタチップを接続して備えると共に、当該薄膜サーミスタチップおよび前記一対の細幅部分と前記薄膜サーミスタチップとの接続部を絶縁被覆部によって被覆してなる温度センサであって、
前記一対の細幅部分における、前記薄膜サーミスタチップから前記端末部分側へ離れた位置に、互いに接近するように内側方向へ突出して対向した湾曲部を備え、
前記絶縁被覆部は、前記薄膜サーミスタチップと前記細幅部分との接続部および前記対向した湾曲部の一部を被覆していることを特徴とする温度センサ。 - 前記湾曲部の前記絶縁被覆部から突出した部分は、互いに離間する外方向に湾曲されていることを特徴とする請求項1に記載の温度センサ。
- 前記一対の幅広の端末部分が、互いに離れる方向に曲げられる場合、前記湾曲部の前記絶縁被覆部から突出した部分を支点として曲げられることを特徴とする請求項1、2のいずれかに記載の温度センサ。
- 前記一対の幅広の端末部分が、互いに離れる方向に曲げられる場合、前記対向した湾曲部の互いに最接近した位置および前記一対の細幅部分と前記湾曲部との境界部分を支点として曲げられることを特徴とする請求項1乃至3のいずれかに記載の温度センサ。
- 前記一対の細幅部分における、前記湾曲部から前記端末部分側へ離れた位置に、さらに他の湾曲部を備えることを特徴とする請求項1、2のいずれかに記載の温度センサ。
- 前記リード部の前記端末部分が、該端末部分に接続される外部引出リード線の芯線径よりも幅広に形成されていることを特徴とする請求項1乃至3のいずれかに記載の温度センサ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005133806A JP4751101B2 (ja) | 2005-05-02 | 2005-05-02 | 温度センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005133806A JP4751101B2 (ja) | 2005-05-02 | 2005-05-02 | 温度センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006308505A JP2006308505A (ja) | 2006-11-09 |
JP4751101B2 true JP4751101B2 (ja) | 2011-08-17 |
Family
ID=37475548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005133806A Expired - Fee Related JP4751101B2 (ja) | 2005-05-02 | 2005-05-02 | 温度センサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4751101B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5326826B2 (ja) | 2009-06-02 | 2013-10-30 | 三菱マテリアル株式会社 | 温度センサ |
JP5316959B2 (ja) * | 2010-03-17 | 2013-10-16 | 三菱マテリアル株式会社 | 薄膜サーミスタセンサ |
JP2019219201A (ja) * | 2018-06-18 | 2019-12-26 | 矢崎総業株式会社 | センサ本体およびセンサ本体の製造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5689934U (ja) * | 1979-12-13 | 1981-07-18 | ||
JPS61234502A (ja) * | 1985-03-14 | 1986-10-18 | レイケム・コーポレイシヨン | 導電性ポリマーデバイス |
JPH0214161Y2 (ja) * | 1982-09-02 | 1990-04-18 | ||
JPH0236241Y2 (ja) * | 1984-03-19 | 1990-10-03 | ||
JPH0875566A (ja) * | 1994-09-08 | 1996-03-22 | Matsushita Electric Ind Co Ltd | サーミスタ温度センサおよびその製造方法 |
JPH11211579A (ja) * | 1998-01-23 | 1999-08-06 | Oizumi Seisakusho:Kk | 表面温度センサ |
JP2000340403A (ja) * | 1999-05-26 | 2000-12-08 | Murata Mfg Co Ltd | 温度センサおよびその製造方法 |
JP2001074563A (ja) * | 1999-09-02 | 2001-03-23 | Ishizuka Electronics Corp | 温度センサ |
JP2003149057A (ja) * | 2001-11-09 | 2003-05-21 | Ishizuka Electronics Corp | 温度センサ |
-
2005
- 2005-05-02 JP JP2005133806A patent/JP4751101B2/ja not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5689934U (ja) * | 1979-12-13 | 1981-07-18 | ||
JPH0214161Y2 (ja) * | 1982-09-02 | 1990-04-18 | ||
JPH0236241Y2 (ja) * | 1984-03-19 | 1990-10-03 | ||
JPS61234502A (ja) * | 1985-03-14 | 1986-10-18 | レイケム・コーポレイシヨン | 導電性ポリマーデバイス |
JPH0875566A (ja) * | 1994-09-08 | 1996-03-22 | Matsushita Electric Ind Co Ltd | サーミスタ温度センサおよびその製造方法 |
JPH11211579A (ja) * | 1998-01-23 | 1999-08-06 | Oizumi Seisakusho:Kk | 表面温度センサ |
JP2000340403A (ja) * | 1999-05-26 | 2000-12-08 | Murata Mfg Co Ltd | 温度センサおよびその製造方法 |
JP2001074563A (ja) * | 1999-09-02 | 2001-03-23 | Ishizuka Electronics Corp | 温度センサ |
JP2003149057A (ja) * | 2001-11-09 | 2003-05-21 | Ishizuka Electronics Corp | 温度センサ |
Also Published As
Publication number | Publication date |
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JP2006308505A (ja) | 2006-11-09 |
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