JP4738114B2 - マスク欠陥検査方法 - Google Patents
マスク欠陥検査方法 Download PDFInfo
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- JP4738114B2 JP4738114B2 JP2005270054A JP2005270054A JP4738114B2 JP 4738114 B2 JP4738114 B2 JP 4738114B2 JP 2005270054 A JP2005270054 A JP 2005270054A JP 2005270054 A JP2005270054 A JP 2005270054A JP 4738114 B2 JP4738114 B2 JP 4738114B2
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- defect inspection
- mask
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- inspection
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- 238000007689 inspection Methods 0.000 title claims description 198
- 230000007547 defect Effects 0.000 title claims description 197
- 238000000034 method Methods 0.000 title claims description 15
- 230000003287 optical effect Effects 0.000 claims description 35
- 230000035945 sensitivity Effects 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 231100000105 margin of exposure Toxicity 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000013461 design Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
図1は、第1の実施の形態に係る露光マスクの製造工程を示すフローチャートである。以下、図1を基に露光マスクの製造工程を説明する。
図4は、第2の実施の形態に係る露光マスクの製造工程を示すフローチャートである。図4において図1と同一な部分には同符号を付してある。
Claims (2)
- 被検査マスクに対して、光を用いた欠陥検査のための光欠陥検査感度を設定し、
前記被検査マスクに対して、電子ビームを用いた欠陥検査のためのEB欠陥検査感度を設定し、
前記被検査マスクのパターンデータと必要欠陥検査感度に関する情報とを関連付けて欠陥検査データを作成し、
前記欠陥検査データと前記光欠陥検査感度を光欠陥検査装置に入力し、前記光欠陥検査感度に関連する前記パターンデータの領域を欠陥検査し、
前記欠陥検査データと前記EB欠陥検査感度をEB欠陥検査装置に入力し、前記EB欠陥検査感度に関連する前記パターンデータの領域を欠陥検査することを特徴とするマスク欠陥検査方法。 - 前記被検査マスクに形成されたパターンを露光転写する際に所望のパターン寸法に転写するための露光量の余裕度と焦点位置の余裕度とをシミュレーションにより見積もり、
前記各余裕度が所定値以下のパターン領域に対して、前記EB欠陥検査感度を設定することを特徴とする請求項1に記載のマスク欠陥検査方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005270054A JP4738114B2 (ja) | 2005-09-16 | 2005-09-16 | マスク欠陥検査方法 |
TW095132751A TW200714894A (en) | 2005-09-16 | 2006-09-05 | Mask defect inspecting method, mask defect inspecting apparatus, and semiconductor device manufacturing method |
KR1020060088399A KR100875569B1 (ko) | 2005-09-16 | 2006-09-13 | 마스크 결함 검사 방법, 마스크 결함 검사 장치, 및 반도체장치의 제조 방법 |
US11/521,305 US20070064997A1 (en) | 2005-09-16 | 2006-09-15 | Mask defect inspecting method, mask defect inspecting apparatus, and semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005270054A JP4738114B2 (ja) | 2005-09-16 | 2005-09-16 | マスク欠陥検査方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007079423A JP2007079423A (ja) | 2007-03-29 |
JP4738114B2 true JP4738114B2 (ja) | 2011-08-03 |
Family
ID=37884167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005270054A Active JP4738114B2 (ja) | 2005-09-16 | 2005-09-16 | マスク欠陥検査方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070064997A1 (ja) |
JP (1) | JP4738114B2 (ja) |
KR (1) | KR100875569B1 (ja) |
TW (1) | TW200714894A (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009300426A (ja) * | 2008-05-16 | 2009-12-24 | Nuflare Technology Inc | レチクル欠陥検査装置およびレチクル欠陥検査方法 |
US8553217B2 (en) * | 2009-06-19 | 2013-10-08 | Kla-Tencor Corporation | EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers |
JP4942800B2 (ja) | 2009-08-18 | 2012-05-30 | 株式会社ニューフレアテクノロジー | 検査装置 |
JP5339085B2 (ja) * | 2009-10-29 | 2013-11-13 | 大日本印刷株式会社 | 反射型マスクおよびその製造方法ならびにマスクパターン検査方法 |
US8217349B2 (en) | 2010-08-05 | 2012-07-10 | Hermes Microvision, Inc. | Method for inspecting EUV reticle and apparatus thereof |
JP5566928B2 (ja) * | 2011-03-04 | 2014-08-06 | 株式会社東芝 | マスク検査方法およびその装置 |
US8953869B2 (en) | 2012-06-14 | 2015-02-10 | Kla-Tencor Corporation | Apparatus and methods for inspecting extreme ultra violet reticles |
KR102267475B1 (ko) | 2013-10-10 | 2021-06-21 | 삼성전자주식회사 | 전자빔 노광 장치 및 이의 에러 검출 방법 |
KR102297038B1 (ko) * | 2018-02-22 | 2021-09-03 | 한양대학교 산학협력단 | 펠리클 멤브레인의 검사 데이터베이스 구축 방법 및 그 데이터베이스를 이용한 펠리클 멤브레인의 검사 방법 |
KR102207666B1 (ko) | 2019-04-16 | 2021-01-26 | 주식회사 이솔 | 스캐닝 타입 euv 마스크의 패턴 이미지 측정장치 |
KR102211513B1 (ko) | 2019-04-16 | 2021-02-03 | 주식회사 이솔 | High NA 스캐닝 타입 EUV 마스크의 패턴 이미지 측정장치 |
KR102591666B1 (ko) | 2021-03-08 | 2023-10-19 | 주식회사 이솔 | 고성능 euv 마스크 패턴 스캐닝 장치 |
KR20230005525A (ko) | 2021-07-01 | 2023-01-10 | 주식회사 이솔 | Euv 블랭크 마스크의 디펙트 검출을 통한 웨이퍼 디펙트를 개선하는 방법 |
US11747289B2 (en) | 2021-10-25 | 2023-09-05 | Samsung Electronics Co., Ltd. | System of measuring image of pattern in high NA scanning-type EUV mask |
US11914282B2 (en) | 2021-10-25 | 2024-02-27 | Samsung Electronics Co., Ltd. | System of measuring image of pattern in scanning type EUV mask |
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JP2000314954A (ja) * | 1999-03-04 | 2000-11-14 | Matsushita Electric Ind Co Ltd | Lsi用パターンのレイアウト作成方法、lsi用パターンの形成方法及びlsi用マスクデータの作成方法 |
JP2001013671A (ja) * | 1999-06-30 | 2001-01-19 | Toshiba Corp | パターン形成方法 |
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JP2003347197A (ja) * | 2002-05-28 | 2003-12-05 | Sony Corp | マスク検査方法、マスク作成方法およびマスク |
JP2004045066A (ja) * | 2002-07-09 | 2004-02-12 | Fujitsu Ltd | 検査装置及び検査方法 |
JP2004191297A (ja) * | 2002-12-13 | 2004-07-08 | Sony Corp | マスク検査方法および検査装置 |
JP2005044912A (ja) * | 2003-07-25 | 2005-02-17 | Hitachi High-Technologies Corp | 回路パターンの検査装置 |
JP2007513385A (ja) * | 2003-12-04 | 2007-05-24 | ケーエルエー・テンコール・テクノロジーズ・コーポレーション | レチクル・レイアウト・データをシミュレートし、レチクル・レイアウト・データを検査し、レチクル・レイアウト・データの検査プロセスを生成する方法 |
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-
2005
- 2005-09-16 JP JP2005270054A patent/JP4738114B2/ja active Active
-
2006
- 2006-09-05 TW TW095132751A patent/TW200714894A/zh unknown
- 2006-09-13 KR KR1020060088399A patent/KR100875569B1/ko active IP Right Grant
- 2006-09-15 US US11/521,305 patent/US20070064997A1/en not_active Abandoned
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JP2003347197A (ja) * | 2002-05-28 | 2003-12-05 | Sony Corp | マスク検査方法、マスク作成方法およびマスク |
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JP2004191297A (ja) * | 2002-12-13 | 2004-07-08 | Sony Corp | マスク検査方法および検査装置 |
JP2005044912A (ja) * | 2003-07-25 | 2005-02-17 | Hitachi High-Technologies Corp | 回路パターンの検査装置 |
JP2007513385A (ja) * | 2003-12-04 | 2007-05-24 | ケーエルエー・テンコール・テクノロジーズ・コーポレーション | レチクル・レイアウト・データをシミュレートし、レチクル・レイアウト・データを検査し、レチクル・レイアウト・データの検査プロセスを生成する方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070064997A1 (en) | 2007-03-22 |
TW200714894A (en) | 2007-04-16 |
JP2007079423A (ja) | 2007-03-29 |
KR20070032225A (ko) | 2007-03-21 |
KR100875569B1 (ko) | 2008-12-23 |
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