JP4731622B2 - 洗浄装置および洗浄方法 - Google Patents
洗浄装置および洗浄方法 Download PDFInfo
- Publication number
- JP4731622B2 JP4731622B2 JP2009502348A JP2009502348A JP4731622B2 JP 4731622 B2 JP4731622 B2 JP 4731622B2 JP 2009502348 A JP2009502348 A JP 2009502348A JP 2009502348 A JP2009502348 A JP 2009502348A JP 4731622 B2 JP4731622 B2 JP 4731622B2
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- JP
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- Prior art keywords
- cleaning
- ultrasonic
- cleaned
- wafer
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004140 cleaning Methods 0.000 title claims description 188
- 238000000034 method Methods 0.000 title claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 74
- 239000001257 hydrogen Substances 0.000 claims description 65
- 229910052739 hydrogen Inorganic materials 0.000 claims description 65
- 239000007788 liquid Substances 0.000 claims description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 230000007246 mechanism Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 230000001902 propagating effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 69
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 57
- 230000000694 effects Effects 0.000 description 30
- 239000010419 fine particle Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 11
- 229910021642 ultra pure water Inorganic materials 0.000 description 10
- 239000012498 ultrapure water Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000004506 ultrasonic cleaning Methods 0.000 description 8
- 238000005406 washing Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000008237 rinsing water Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
2 超音波ノズル
3 洗浄液
4 照射点
5 振動体
6 超音波振動子
7 ノズル
11 構造体
12 照射面
13 ケーブル
14 紫外線照射装置
15 紫外線ランプ
16 ランプハウス
17 窒素ガス
18 貫通孔
19 開口部
20 チューブ
図3は、本発明の一実施例である洗浄装置の基本的な構成を説明する図である。図3の上側は装置を水平方向に切断した模式的断面図、下側は装置を垂直方向に切断した模式的断面図である。本実施例においては、構造体11は円柱状の形状をしており、直径は約50mm、高さは約30mmである。構造体11の材質には、透明な合成石英ガラスを選び、合成石英ガラスによる著しい吸収が生じない波長170nm以上の紫外線を利用することとした。
洗浄後、偏光顕微鏡を用いてパターンの観察を行い、パターン倒れの有無を確認した。
Claims (9)
- 平坦な表面を有する洗浄対象物の当該表面を洗浄するための洗浄装置において、
超音波と紫外線とを伝播し得る構造体であって、前記表面に対向する平坦な表面を有する構造体と、
前記洗浄対象物の前記表面を照射するための超音波振動子および紫外線照射装置と、
前記構造体の前記表面を前記洗浄対象物の前記表面に対して一定の間隔を設けて平行に保持するための機構と、
前記二つの表面間の空間に洗浄液を供給するための洗浄液供給機構と
を含んでなり、
前記超音波振動子は、前記構造体を介して超音波を前記洗浄対象物の前記表面に照射するよう、前記構造体に直結され、
前記紫外線照射装置は、前記超音波振動子に直結された前記構造体を介して紫外線を前記洗浄対象物の前記表面に照射するよう配置され、
前記洗浄液が、水素、酸素、希ガス物質およびこれらの混合物からなる群から選ばれた物質を水に溶解させたガス溶解水である、
洗浄装置。 - 前記洗浄液供給機構が、前記構造体の内部を通り、前記構造体の前記表面に開口する導通管部を有する、請求項1に記載の洗浄装置。
- 前記間隔が1mm以下である、請求項1または2に記載の洗浄装置。
- 前記構造体が石英ガラスである、請求項1〜3のいずれかに記載の洗浄装置。
- 前記紫外線照射装置から照射される紫外線の波長が170〜250nmの範囲にある、請求項1〜4のいずれかに記載の洗浄装置。
- 前記超音波振動子から照射される超音波の振動周波数が1MHz以上である、請求項1〜5のいずれかに記載の洗浄装置。
- 前記洗浄対象物が半導体装置である、請求項1〜6のいずれかに記載の洗浄装置。
- 前記洗浄対象物の表面が、溝と溝との間の凸部の幅が100nm以下である凹凸を有する、請求項1〜7のいずれかに記載の洗浄装置。
- 請求項1〜8のいずれかに記載の洗浄装置を用いて、平坦な表面を有する洗浄対象物の当該表面を洗浄する方法であって、前記空間に前記洗浄液を供給しつつ、前記超音波振動子からの超音波と前記紫外線照射装置からの紫外線とを、前記構造体の前記表面を通して、前記洗浄対象物の前記表面に照射する、洗浄方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2007/000176 WO2008107933A1 (ja) | 2007-03-07 | 2007-03-07 | 洗浄装置および洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008107933A1 JPWO2008107933A1 (ja) | 2010-06-03 |
JP4731622B2 true JP4731622B2 (ja) | 2011-07-27 |
Family
ID=39737839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009502348A Expired - Fee Related JP4731622B2 (ja) | 2007-03-07 | 2007-03-07 | 洗浄装置および洗浄方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4731622B2 (ja) |
WO (1) | WO2008107933A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180071740A (ko) * | 2016-12-20 | 2018-06-28 | 주식회사 티씨케이 | 반도체 제조용 부품 생산 공정의 폐 흑연 재활용 방법 |
KR20180099037A (ko) * | 2017-02-28 | 2018-09-05 | (주) 엔피홀딩스 | Uv 램프를 이용한 기판 세정 노즐 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009058962B4 (de) * | 2009-11-03 | 2012-12-27 | Suss Microtec Photomask Equipment Gmbh & Co. Kg | Verfahren und Vorrichtung zum Behandeln von Substraten |
WO2017073396A1 (ja) * | 2015-10-28 | 2017-05-04 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム及び記憶媒体 |
CN108746010A (zh) * | 2018-05-24 | 2018-11-06 | 友达光电(昆山)有限公司 | 一种清洗系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01111337A (ja) * | 1987-10-26 | 1989-04-28 | Toshiba Corp | ウエーハ洗浄装置 |
JPH10177978A (ja) * | 1996-12-18 | 1998-06-30 | Tadahiro Omi | 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、省液型の液体供給ノズル装置及びウエット処理装置 |
JP2000107706A (ja) * | 1998-10-08 | 2000-04-18 | Furontekku:Kk | 洗浄装置 |
JP2000182974A (ja) * | 1998-12-11 | 2000-06-30 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
JP2003092277A (ja) * | 2001-09-17 | 2003-03-28 | Alps Electric Co Ltd | ウェット処理装置 |
JP2003093984A (ja) * | 2001-06-26 | 2003-04-02 | Alps Electric Co Ltd | ウエット処理ノズルおよびウエット処理装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3075356B1 (ja) * | 1999-03-29 | 2000-08-14 | 株式会社カイジョー | 超音波洗浄装置 |
JP3809296B2 (ja) * | 1999-04-14 | 2006-08-16 | 株式会社カイジョー | 超音波洗浄装置 |
-
2007
- 2007-03-07 JP JP2009502348A patent/JP4731622B2/ja not_active Expired - Fee Related
- 2007-03-07 WO PCT/JP2007/000176 patent/WO2008107933A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01111337A (ja) * | 1987-10-26 | 1989-04-28 | Toshiba Corp | ウエーハ洗浄装置 |
JPH10177978A (ja) * | 1996-12-18 | 1998-06-30 | Tadahiro Omi | 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、省液型の液体供給ノズル装置及びウエット処理装置 |
JP2000107706A (ja) * | 1998-10-08 | 2000-04-18 | Furontekku:Kk | 洗浄装置 |
JP2000182974A (ja) * | 1998-12-11 | 2000-06-30 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
JP2003093984A (ja) * | 2001-06-26 | 2003-04-02 | Alps Electric Co Ltd | ウエット処理ノズルおよびウエット処理装置 |
JP2003092277A (ja) * | 2001-09-17 | 2003-03-28 | Alps Electric Co Ltd | ウェット処理装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180071740A (ko) * | 2016-12-20 | 2018-06-28 | 주식회사 티씨케이 | 반도체 제조용 부품 생산 공정의 폐 흑연 재활용 방법 |
KR101962305B1 (ko) * | 2016-12-20 | 2019-03-26 | 주식회사 티씨케이 | 반도체 제조용 부품 생산 공정의 폐 흑연 재활용 방법 |
KR20180099037A (ko) * | 2017-02-28 | 2018-09-05 | (주) 엔피홀딩스 | Uv 램프를 이용한 기판 세정 노즐 |
KR101987705B1 (ko) * | 2017-02-28 | 2019-06-11 | (주)엔피홀딩스 | Uv 램프를 이용한 기판 세정 노즐 |
Also Published As
Publication number | Publication date |
---|---|
WO2008107933A1 (ja) | 2008-09-12 |
JPWO2008107933A1 (ja) | 2010-06-03 |
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