JP5122662B2 - 表面洗浄方法及び装置 - Google Patents
表面洗浄方法及び装置 Download PDFInfo
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- JP5122662B2 JP5122662B2 JP2011037788A JP2011037788A JP5122662B2 JP 5122662 B2 JP5122662 B2 JP 5122662B2 JP 2011037788 A JP2011037788 A JP 2011037788A JP 2011037788 A JP2011037788 A JP 2011037788A JP 5122662 B2 JP5122662 B2 JP 5122662B2
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- 238000000034 method Methods 0.000 title claims description 30
- 238000004140 cleaning Methods 0.000 title claims description 23
- 239000007788 liquid Substances 0.000 claims description 100
- 230000001052 transient effect Effects 0.000 claims description 26
- 230000006835 compression Effects 0.000 claims description 11
- 238000007906 compression Methods 0.000 claims description 11
- 230000006837 decompression Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000002309 gasification Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 41
- 239000002245 particle Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
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- 238000005393 sonoluminescence Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000002706 hydrostatic effect Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002604 ultrasonography Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000010349 pulsation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K15/00—Acoustics not otherwise provided for
- G10K15/04—Sound-producing devices
- G10K15/043—Sound-producing devices producing shock waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Acoustics & Sound (AREA)
- Multimedia (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Accessories For Mixers (AREA)
Description
液体中に生成される気泡サイズの範囲を選択するステップと、
液体に印加される音場の特性を選択するステップと、
洗浄すべき表面を、液体中に設定するステップと、
洗浄すべき表面の近くの液体中に、選択した範囲の気泡サイズを持つ気泡を生成するステップであって、(1)ガス化ユニットを用いて液体中にガスを溶解すること、(2)噴水式システム、毛細管、ノズルおよび薄膜接触器のうちの1つを用いて液体中へガスを注入すること、または、(3)液体に、圧力低下、1回以上の圧縮/減圧サイクル、温度上昇、または1回以上の加熱/冷却サイクルを適用することを含むステップと、
選択した特性を有する固定音場を生成するステップと、
生成した気泡を含む液体を固定音場に曝して、キャビテーション液体を得るステップと、
洗浄すべき表面を、キャビテーション液体に曝すステップと、を含み、
気泡サイズの範囲は、音場特性の選択の後、これに依存して選択され、気泡を含む液体を固定音場に曝す際に、洗浄すべき表面の近くの液体中に過渡的なキャビテーションを発生し制御する。
液体中に生成される気泡サイズの範囲を選択するための手段と、
液体に印加される音場の特性を選択するための手段と、
洗浄すべき表面を、液体中に設定するための手段と、
洗浄すべき表面の近くの液体中に、選択した範囲の気泡サイズを持つ気泡を生成するための手段と、
選択した特性を有する音場を生成するための手段と、
液体を音場に曝すための手段と、を備え、
気泡を生成するための手段は、(1)ガス化ユニットを用いて液体中にガスを溶解すること、(2)噴水式システム、毛細管、ノズルおよび薄膜接触器のうちの1つを用いて液体中へガスを注入すること、または、(3)液体に、圧力低下、1回以上の圧縮/減圧サイクル、温度上昇、または1回以上の加熱/冷却サイクルを適用することを含み、
気泡サイズの範囲は、音場特性の選択の後、これに依存して選択され、気泡を含む液体を固定音場に曝す際に、洗浄すべき表面の近くの液体中に過渡的なキャビテーションを発生し制御する。
レイリー・プレセットモデルに基づくヤングの公式により、特定周波数に対する気泡の共振半径について計算することができる。
単一ウエハースの巨大音洗浄ツール(Verteq Goldfinger)の洗浄性能を評価するために、34nmのSiO2粒子によって汚染された1組みのシリコン基板が使用された。
2:DIW供給
3:ガス+DIW供給
4:振動子
Claims (8)
- 表面を洗浄するための方法であって、
液体中に生成される気泡サイズの範囲を選択するステップと、
液体に印加される音場の特性を選択するステップと、
洗浄すべき表面を、液体中に設定するステップと、
洗浄すべき表面の近くの液体中に、選択した範囲の気泡サイズを持つ気泡を生成するステップであって、(1)ガス化ユニットを用いて液体中にガスを溶解すること、(2)噴水式システム、毛細管、ノズルおよび薄膜接触器のうちの1つを用いて液体中へガスを注入すること、または、(3)液体に、圧力低下、1回以上の圧縮/減圧サイクル、温度上昇、または1回以上の加熱/冷却サイクルを適用することを含むステップと、
選択した特性を有する固定音場を生成するステップと、
生成した気泡を含む液体を固定音場に曝して、キャビテーション液体を得るステップと、
洗浄すべき表面を、キャビテーション液体に曝すステップと、を含み、
気泡サイズの範囲は、音場特性の選択の後、これに依存して選択され、気泡を含む液体を固定音場に曝す際に、洗浄すべき表面の近くの液体中に過渡的なキャビテーションを発生し制御するようにした方法。 - 選択した範囲の気泡サイズを持つ気泡を生成するステップは、液体に表面活性剤を加えることを含むことを特徴とする請求項1記載の方法。
- 気泡サイズの範囲は、時間とともに変化することを特徴とする請求項1記載の方法。
- 固定音場は、1つ以上の周波数を含むことを特徴とする請求項1記載の方法。
- 気泡サイズの範囲を測定するステップをさらに含む請求項1記載の方法。
- 気泡サイズの範囲の測定結果に基づいて、気泡サイズの範囲を制御するステップをさらに含む請求項5記載の方法。
- 半導体基板の洗浄のために使用することを特徴とする請求項1〜6のいずれかに記載の方法。
- 表面を洗浄するための装置であって、
液体中に生成される気泡サイズの範囲を選択するための手段と、
液体に印加される音場の特性を選択するための手段と、
洗浄すべき表面を、液体中に設定するための手段と、
洗浄すべき表面の近くの液体中に、選択した範囲の気泡サイズを持つ気泡を生成するための手段と、
選択した特性を有する音場を生成するための手段と、
液体を音場に曝すための手段と、を備え、
気泡を生成するための手段は、(1)ガス化ユニットを用いて液体中にガスを溶解すること、(2)噴水式システム、毛細管、ノズルおよび薄膜接触器のうちの1つを用いて液体中へガスを注入すること、または、(3)液体に、圧力低下、1回以上の圧縮/減圧サイクル、温度上昇、または1回以上の加熱/冷却サイクルを適用することを含み、
気泡サイズの範囲は、音場特性の選択の後、これに依存して選択され、気泡を含む液体を固定音場に曝す際に、洗浄すべき表面の近くの液体中に過渡的なキャビテーションを発生し制御するようにした装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61208704P | 2004-09-21 | 2004-09-21 | |
EP04447204.1 | 2004-09-21 | ||
US60/612087 | 2004-09-21 | ||
EP04447204A EP1637238A1 (en) | 2004-09-21 | 2004-09-21 | Method for controlled cavitation |
Related Parent Applications (1)
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JP2005274747A Division JP2006088154A (ja) | 2004-09-21 | 2005-09-21 | 過渡的なキャビテーションを制御する方法及び装置 |
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JP2011115793A JP2011115793A (ja) | 2011-06-16 |
JP5122662B2 true JP5122662B2 (ja) | 2013-01-16 |
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JP2005274747A Pending JP2006088154A (ja) | 2004-09-21 | 2005-09-21 | 過渡的なキャビテーションを制御する方法及び装置 |
JP2011037788A Active JP5122662B2 (ja) | 2004-09-21 | 2011-02-24 | 表面洗浄方法及び装置 |
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JP (2) | JP2006088154A (ja) |
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US8202369B2 (en) | 2012-06-19 |
JP2011115793A (ja) | 2011-06-16 |
US20060060991A1 (en) | 2006-03-23 |
JP2006088154A (ja) | 2006-04-06 |
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