JP4727288B2 - 基板上に形成されるデザインを最適化する方法及びプログラム - Google Patents

基板上に形成されるデザインを最適化する方法及びプログラム Download PDF

Info

Publication number
JP4727288B2
JP4727288B2 JP2005130357A JP2005130357A JP4727288B2 JP 4727288 B2 JP4727288 B2 JP 4727288B2 JP 2005130357 A JP2005130357 A JP 2005130357A JP 2005130357 A JP2005130357 A JP 2005130357A JP 4727288 B2 JP4727288 B2 JP 4727288B2
Authority
JP
Japan
Prior art keywords
design
optimizing
corner
value
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005130357A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005316486A (ja
JP2005316486A5 (enExample
Inventor
フランシスクス アントニウス ユーリングス マルクス
マルダー メルキオル
レイディグ トマス
ホレーバッハ ウベ
Original Assignee
エーエスエムエル マスクツールズ ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーエスエムエル マスクツールズ ビー．ブイ． filed Critical エーエスエムエル マスクツールズ ビー．ブイ．
Publication of JP2005316486A publication Critical patent/JP2005316486A/ja
Publication of JP2005316486A5 publication Critical patent/JP2005316486A5/ja
Application granted granted Critical
Publication of JP4727288B2 publication Critical patent/JP4727288B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Printing Methods (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
JP2005130357A 2004-03-31 2005-03-31 基板上に形成されるデザインを最適化する方法及びプログラム Expired - Fee Related JP4727288B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55783304P 2004-03-31 2004-03-31
US60/557833 2004-03-31

Publications (3)

Publication Number Publication Date
JP2005316486A JP2005316486A (ja) 2005-11-10
JP2005316486A5 JP2005316486A5 (enExample) 2007-06-28
JP4727288B2 true JP4727288B2 (ja) 2011-07-20

Family

ID=35539303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005130357A Expired - Fee Related JP4727288B2 (ja) 2004-03-31 2005-03-31 基板上に形成されるデザインを最適化する方法及びプログラム

Country Status (7)

Country Link
US (1) US7856606B2 (enExample)
EP (1) EP1582934A3 (enExample)
JP (1) JP4727288B2 (enExample)
KR (1) KR100847100B1 (enExample)
CN (1) CN1749861B (enExample)
SG (1) SG115825A1 (enExample)
TW (1) TWI385546B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
US7962868B2 (en) 2005-10-28 2011-06-14 Freescale Semiconductor, Inc. Method for forming a semiconductor device using optical proximity correction for the optical lithography
US8370773B2 (en) 2006-08-16 2013-02-05 Freescale Semiconductor, Inc. Method and apparatus for designing an integrated circuit using inverse lithography technology
US7707539B2 (en) * 2007-09-28 2010-04-27 Synopsys, Inc. Facilitating process model accuracy by modeling mask corner rounding effects
US8132128B2 (en) * 2008-10-31 2012-03-06 Synopsys, Inc. Method and system for performing lithography verification for a double-patterning process
CN104570584B (zh) * 2013-10-16 2019-06-28 中芯国际集成电路制造(上海)有限公司 一种缺口线端的opc修正方法
US9791786B1 (en) * 2016-04-08 2017-10-17 Applied Materials, Inc. Method to reduce line waviness
CN117706861A (zh) 2022-09-08 2024-03-15 联华电子股份有限公司 光掩模结构

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3331822B2 (ja) 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
EP0824722B1 (en) 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
JP3551660B2 (ja) * 1996-10-29 2004-08-11 ソニー株式会社 露光パターンの補正方法および露光パターンの補正装置および露光方法
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6262796B1 (en) 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
JPH11121361A (ja) 1997-10-20 1999-04-30 Canon Inc 露光方法
JP2000100692A (ja) 1998-09-21 2000-04-07 Toshiba Corp 設計パターン補正方法
US6248485B1 (en) 1999-07-19 2001-06-19 Lucent Technologies Inc. Method for controlling a process for patterning a feature in a photoresist
JP2001159809A (ja) * 1999-09-21 2001-06-12 Toshiba Corp マスクパターン設計装置、マスクパターン設計方法およびマスクパターン設計プログラムを格納したコンピュータ読取り可能な記録媒体
JP2001183804A (ja) 1999-12-24 2001-07-06 Mitsubishi Electric Corp レイアウト補正装置
US6453457B1 (en) * 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
US6665856B1 (en) 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
JP2002250999A (ja) 2001-02-26 2002-09-06 Mitsubishi Electric Corp パターン補正装置、方法、パターン補正を行うためのコンピュータプログラム、および、そのようなプログラムを記録した記録媒体
JP2003059809A (ja) 2001-08-20 2003-02-28 Nikon Corp 露光方法及びデバイス製造方法
US6763514B2 (en) 2001-12-12 2004-07-13 Numerical Technologies, Inc. Method and apparatus for controlling rippling during optical proximity correction
TWI236574B (en) 2002-02-08 2005-07-21 Sony Corp Forming method of exposure mask pattern, exposure mask pattern and manufacturing method of semiconductor device
JP4152647B2 (ja) 2002-03-06 2008-09-17 富士通株式会社 近接効果補正方法及びプログラム
JP3871949B2 (ja) 2002-03-27 2007-01-24 株式会社東芝 マスクデータ作成装置及びマスクデータ作成方法
US7043712B2 (en) * 2003-09-09 2006-05-09 International Business Machines Corporation Method for adaptive segment refinement in optical proximity correction
JP4247104B2 (ja) * 2003-12-18 2009-04-02 株式会社東芝 パターン検証方法、パターン検証システム
JP2005215587A (ja) 2004-02-02 2005-08-11 Sony Corp 位相シフトマスクの製造方法
JP2009034095A (ja) 2007-07-06 2009-02-19 Sanyo Chem Ind Ltd タンパク質含有水溶液安定化剤、タンパク質含有水溶液の安定化方法及びタンパク質含有水溶液

Also Published As

Publication number Publication date
JP2005316486A (ja) 2005-11-10
KR100847100B1 (ko) 2008-07-17
CN1749861A (zh) 2006-03-22
TW200604868A (en) 2006-02-01
SG115825A1 (en) 2005-10-28
US7856606B2 (en) 2010-12-21
EP1582934A2 (en) 2005-10-05
CN1749861B (zh) 2012-02-29
KR20060045359A (ko) 2006-05-17
TWI385546B (zh) 2013-02-11
EP1582934A3 (en) 2007-02-28
US20060010417A1 (en) 2006-01-12

Similar Documents

Publication Publication Date Title
JP4464365B2 (ja) 近傍の影響を考慮した光学的近接効果補正を実行する装置、方法およびコンピュータ・プログラム
JP4639113B2 (ja) 基板上に形成されるデザインを最適化する方法及びプログラム
KR101185463B1 (ko) Ｎａ-시그마 노광세팅 및 디바이스 레이아웃을 이용하는 스캐터링 바아 ｏｐｃ에 대한 동시 최적화 방법, 프로그램물 및 장치
KR100576752B1 (ko) 2차원 피처모델 캘리브레이션 및 최적화 방법
JP4102728B2 (ja) 自動光近接補正（ｏｐｃ）ルール作成
JP5461477B2 (ja) モデルベーススキャナ調整を実行する方法
KR100865768B1 (ko) 다크 필드 더블 이중극 리소그래피（ｄｄｌ）를 수행하는방법 및 장치
KR101527496B1 (ko) 3ｄ 레지스트 프로파일 시뮬레이션을 위한 리소그래피 모델
JP4420878B2 (ja) 異なるリソグラフィ・システム間のｏｐｅ整合を提供するために、レジスト・プロセスの較正／最適化、およびｄｏｅ最適化を実行する方法
JP4602962B2 (ja) 多重露光プロセスに用いられるモデルベースのジオメトリ分解のための方法、プログラム製品及び装置
KR100841729B1 (ko) 풀-칩 제조 신뢰성 체크 및 보정 수행 방법 및 이를 수행하기 위한 컴퓨터 프로그램을 기록한 컴퓨터로 읽을 수 있는 기록매체
US7433791B2 (en) Method of performing multiple stage model calibration for optical imaging simulation models
JP4727288B2 (ja) 基板上に形成されるデザインを最適化する方法及びプログラム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060411

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20060904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070514

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20070517

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090521

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091216

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100302

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100610

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110317

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110413

R150 Certificate of patent or registration of utility model

Ref document number: 4727288

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140422

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees