TWI385546B - 用以最佳化形成於基板上之設計的方法及程式產品 - Google Patents

用以最佳化形成於基板上之設計的方法及程式產品 Download PDF

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Publication number
TWI385546B
TWI385546B TW094110374A TW94110374A TWI385546B TW I385546 B TWI385546 B TW I385546B TW 094110374 A TW094110374 A TW 094110374A TW 94110374 A TW94110374 A TW 94110374A TW I385546 B TWI385546 B TW I385546B
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TW
Taiwan
Prior art keywords
computer
substrate
segment
design
implemented method
Prior art date
Application number
TW094110374A
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English (en)
Chinese (zh)
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TW200604868A (en
Inventor
法蘭西斯克斯 安東尼斯 尤林斯 馬克斯
麥德勒 麥齊爾
萊迪 湯瑪士
哈勒伯 尤威
Original Assignee
Ａｓｍｌ遮蓋器具公司
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Publication of TW200604868A publication Critical patent/TW200604868A/zh
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Publication of TWI385546B publication Critical patent/TWI385546B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Printing Methods (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
TW094110374A 2004-03-31 2005-03-31 用以最佳化形成於基板上之設計的方法及程式產品 TWI385546B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55783304P 2004-03-31 2004-03-31

Publications (2)

Publication Number Publication Date
TW200604868A TW200604868A (en) 2006-02-01
TWI385546B true TWI385546B (zh) 2013-02-11

Family

ID=35539303

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110374A TWI385546B (zh) 2004-03-31 2005-03-31 用以最佳化形成於基板上之設計的方法及程式產品

Country Status (7)

Country Link
US (1) US7856606B2 (enExample)
EP (1) EP1582934A3 (enExample)
JP (1) JP4727288B2 (enExample)
KR (1) KR100847100B1 (enExample)
CN (1) CN1749861B (enExample)
SG (1) SG115825A1 (enExample)
TW (1) TWI385546B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
US7962868B2 (en) 2005-10-28 2011-06-14 Freescale Semiconductor, Inc. Method for forming a semiconductor device using optical proximity correction for the optical lithography
US8370773B2 (en) 2006-08-16 2013-02-05 Freescale Semiconductor, Inc. Method and apparatus for designing an integrated circuit using inverse lithography technology
US7707539B2 (en) * 2007-09-28 2010-04-27 Synopsys, Inc. Facilitating process model accuracy by modeling mask corner rounding effects
US8132128B2 (en) * 2008-10-31 2012-03-06 Synopsys, Inc. Method and system for performing lithography verification for a double-patterning process
CN104570584B (zh) * 2013-10-16 2019-06-28 中芯国际集成电路制造(上海)有限公司 一种缺口线端的opc修正方法
US9791786B1 (en) * 2016-04-08 2017-10-17 Applied Materials, Inc. Method to reduce line waviness
CN117706861A (zh) 2022-09-08 2024-03-15 联华电子股份有限公司 光掩模结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991006A (en) * 1996-10-29 1999-11-23 Sony Corporation Method and apparatus for correcting exposure patterns, and exposure mask, method of exposing and semiconductor device
US20020100004A1 (en) * 2000-09-29 2002-07-25 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US20030170551A1 (en) * 2002-03-06 2003-09-11 Fujitsu Limited Proximity effect correction apparatus, proximity effect correction method, storage medium , and computer program product
US6665856B1 (en) * 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3331822B2 (ja) 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
EP0824722B1 (en) 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6262796B1 (en) 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
JPH11121361A (ja) 1997-10-20 1999-04-30 Canon Inc 露光方法
JP2000100692A (ja) 1998-09-21 2000-04-07 Toshiba Corp 設計パターン補正方法
US6248485B1 (en) 1999-07-19 2001-06-19 Lucent Technologies Inc. Method for controlling a process for patterning a feature in a photoresist
JP2001159809A (ja) * 1999-09-21 2001-06-12 Toshiba Corp マスクパターン設計装置、マスクパターン設計方法およびマスクパターン設計プログラムを格納したコンピュータ読取り可能な記録媒体
JP2001183804A (ja) 1999-12-24 2001-07-06 Mitsubishi Electric Corp レイアウト補正装置
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
JP2002250999A (ja) 2001-02-26 2002-09-06 Mitsubishi Electric Corp パターン補正装置、方法、パターン補正を行うためのコンピュータプログラム、および、そのようなプログラムを記録した記録媒体
JP2003059809A (ja) 2001-08-20 2003-02-28 Nikon Corp 露光方法及びデバイス製造方法
US6763514B2 (en) 2001-12-12 2004-07-13 Numerical Technologies, Inc. Method and apparatus for controlling rippling during optical proximity correction
TWI236574B (en) 2002-02-08 2005-07-21 Sony Corp Forming method of exposure mask pattern, exposure mask pattern and manufacturing method of semiconductor device
JP3871949B2 (ja) 2002-03-27 2007-01-24 株式会社東芝 マスクデータ作成装置及びマスクデータ作成方法
US7043712B2 (en) * 2003-09-09 2006-05-09 International Business Machines Corporation Method for adaptive segment refinement in optical proximity correction
JP4247104B2 (ja) * 2003-12-18 2009-04-02 株式会社東芝 パターン検証方法、パターン検証システム
JP2005215587A (ja) 2004-02-02 2005-08-11 Sony Corp 位相シフトマスクの製造方法
JP2009034095A (ja) 2007-07-06 2009-02-19 Sanyo Chem Ind Ltd タンパク質含有水溶液安定化剤、タンパク質含有水溶液の安定化方法及びタンパク質含有水溶液

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991006A (en) * 1996-10-29 1999-11-23 Sony Corporation Method and apparatus for correcting exposure patterns, and exposure mask, method of exposing and semiconductor device
US20020100004A1 (en) * 2000-09-29 2002-07-25 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6665856B1 (en) * 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
US20030170551A1 (en) * 2002-03-06 2003-09-11 Fujitsu Limited Proximity effect correction apparatus, proximity effect correction method, storage medium , and computer program product

Also Published As

Publication number Publication date
JP2005316486A (ja) 2005-11-10
JP4727288B2 (ja) 2011-07-20
KR100847100B1 (ko) 2008-07-17
CN1749861A (zh) 2006-03-22
TW200604868A (en) 2006-02-01
SG115825A1 (en) 2005-10-28
US7856606B2 (en) 2010-12-21
EP1582934A2 (en) 2005-10-05
CN1749861B (zh) 2012-02-29
KR20060045359A (ko) 2006-05-17
EP1582934A3 (en) 2007-02-28
US20060010417A1 (en) 2006-01-12

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