CN1749861B - 优化形成在基板上的掩模图案的方法 - Google Patents

优化形成在基板上的掩模图案的方法 Download PDF

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Publication number
CN1749861B
CN1749861B CN2005100685372A CN200510068537A CN1749861B CN 1749861 B CN1749861 B CN 1749861B CN 2005100685372 A CN2005100685372 A CN 2005100685372A CN 200510068537 A CN200510068537 A CN 200510068537A CN 1749861 B CN1749861 B CN 1749861B
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China
Prior art keywords
angle
deviation
confirm
estimation
pattern
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Expired - Fee Related
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CN2005100685372A
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English (en)
Chinese (zh)
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CN1749861A (zh
Inventor
M·F·A·尤龄斯
M·穆德尔
T·莱迪
U·霍勒巴克
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ASML Holding NV
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ASML FRISKET TOOLS BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Printing Methods (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
CN2005100685372A 2004-03-31 2005-03-31 优化形成在基板上的掩模图案的方法 Expired - Fee Related CN1749861B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55783304P 2004-03-31 2004-03-31
US60/557833 2004-03-31

Publications (2)

Publication Number Publication Date
CN1749861A CN1749861A (zh) 2006-03-22
CN1749861B true CN1749861B (zh) 2012-02-29

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CN2005100685372A Expired - Fee Related CN1749861B (zh) 2004-03-31 2005-03-31 优化形成在基板上的掩模图案的方法

Country Status (7)

Country Link
US (1) US7856606B2 (enExample)
EP (1) EP1582934A3 (enExample)
JP (1) JP4727288B2 (enExample)
KR (1) KR100847100B1 (enExample)
CN (1) CN1749861B (enExample)
SG (1) SG115825A1 (enExample)
TW (1) TWI385546B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
US7962868B2 (en) 2005-10-28 2011-06-14 Freescale Semiconductor, Inc. Method for forming a semiconductor device using optical proximity correction for the optical lithography
US8370773B2 (en) 2006-08-16 2013-02-05 Freescale Semiconductor, Inc. Method and apparatus for designing an integrated circuit using inverse lithography technology
US7707539B2 (en) * 2007-09-28 2010-04-27 Synopsys, Inc. Facilitating process model accuracy by modeling mask corner rounding effects
US8132128B2 (en) * 2008-10-31 2012-03-06 Synopsys, Inc. Method and system for performing lithography verification for a double-patterning process
CN104570584B (zh) * 2013-10-16 2019-06-28 中芯国际集成电路制造(上海)有限公司 一种缺口线端的opc修正方法
US9791786B1 (en) * 2016-04-08 2017-10-17 Applied Materials, Inc. Method to reduce line waviness
CN117706861A (zh) 2022-09-08 2024-03-15 联华电子股份有限公司 光掩模结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991006A (en) * 1996-10-29 1999-11-23 Sony Corporation Method and apparatus for correcting exposure patterns, and exposure mask, method of exposing and semiconductor device
US6665856B1 (en) * 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects

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JP3331822B2 (ja) 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
EP0824722B1 (en) 1996-03-06 2001-07-25 Asm Lithography B.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
US6262796B1 (en) 1997-03-10 2001-07-17 Asm Lithography B.V. Positioning device having two object holders
JPH11121361A (ja) 1997-10-20 1999-04-30 Canon Inc 露光方法
JP2000100692A (ja) 1998-09-21 2000-04-07 Toshiba Corp 設計パターン補正方法
US6248485B1 (en) 1999-07-19 2001-06-19 Lucent Technologies Inc. Method for controlling a process for patterning a feature in a photoresist
JP2001159809A (ja) * 1999-09-21 2001-06-12 Toshiba Corp マスクパターン設計装置、マスクパターン設計方法およびマスクパターン設計プログラムを格納したコンピュータ読取り可能な記録媒体
JP2001183804A (ja) 1999-12-24 2001-07-06 Mitsubishi Electric Corp レイアウト補正装置
US6453457B1 (en) * 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
US6625801B1 (en) 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
JP2002250999A (ja) 2001-02-26 2002-09-06 Mitsubishi Electric Corp パターン補正装置、方法、パターン補正を行うためのコンピュータプログラム、および、そのようなプログラムを記録した記録媒体
JP2003059809A (ja) 2001-08-20 2003-02-28 Nikon Corp 露光方法及びデバイス製造方法
US6763514B2 (en) 2001-12-12 2004-07-13 Numerical Technologies, Inc. Method and apparatus for controlling rippling during optical proximity correction
TWI236574B (en) 2002-02-08 2005-07-21 Sony Corp Forming method of exposure mask pattern, exposure mask pattern and manufacturing method of semiconductor device
JP4152647B2 (ja) 2002-03-06 2008-09-17 富士通株式会社 近接効果補正方法及びプログラム
JP3871949B2 (ja) 2002-03-27 2007-01-24 株式会社東芝 マスクデータ作成装置及びマスクデータ作成方法
US7043712B2 (en) * 2003-09-09 2006-05-09 International Business Machines Corporation Method for adaptive segment refinement in optical proximity correction
JP4247104B2 (ja) * 2003-12-18 2009-04-02 株式会社東芝 パターン検証方法、パターン検証システム
JP2005215587A (ja) 2004-02-02 2005-08-11 Sony Corp 位相シフトマスクの製造方法
JP2009034095A (ja) 2007-07-06 2009-02-19 Sanyo Chem Ind Ltd タンパク質含有水溶液安定化剤、タンパク質含有水溶液の安定化方法及びタンパク質含有水溶液

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991006A (en) * 1996-10-29 1999-11-23 Sony Corporation Method and apparatus for correcting exposure patterns, and exposure mask, method of exposing and semiconductor device
US6665856B1 (en) * 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects

Also Published As

Publication number Publication date
JP2005316486A (ja) 2005-11-10
JP4727288B2 (ja) 2011-07-20
KR100847100B1 (ko) 2008-07-17
CN1749861A (zh) 2006-03-22
TW200604868A (en) 2006-02-01
SG115825A1 (en) 2005-10-28
US7856606B2 (en) 2010-12-21
EP1582934A2 (en) 2005-10-05
KR20060045359A (ko) 2006-05-17
TWI385546B (zh) 2013-02-11
EP1582934A3 (en) 2007-02-28
US20060010417A1 (en) 2006-01-12

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