JP4718070B2 - アンダーフィル封止および補修方法 - Google Patents

アンダーフィル封止および補修方法 Download PDF

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Publication number
JP4718070B2
JP4718070B2 JP2001505052A JP2001505052A JP4718070B2 JP 4718070 B2 JP4718070 B2 JP 4718070B2 JP 2001505052 A JP2001505052 A JP 2001505052A JP 2001505052 A JP2001505052 A JP 2001505052A JP 4718070 B2 JP4718070 B2 JP 4718070B2
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Prior art keywords
methylimidazole
circuit board
semiconductor device
thermosetting resin
resin composition
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Expired - Fee Related
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JP2001505052A
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Japanese (ja)
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JP2003502484A (ja
Inventor
孝久 道端
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Henkel Corp
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Henkel Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/02—Polycondensates containing more than one epoxy group per molecule
    • C08G59/12—Polycondensates containing more than one epoxy group per molecule of polycarboxylic acids with epihalohydrins or precursors thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
JP2001505052A 1999-06-17 2000-06-16 アンダーフィル封止および補修方法 Expired - Fee Related JP4718070B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US13948699P 1999-06-17 1999-06-17
US60/139,486 1999-06-17
US19339200P 2000-03-31 2000-03-31
US19339100P 2000-03-31 2000-03-31
US60/193,391 2000-03-31
US60/193,392 2000-03-31
US21047000P 2000-06-09 2000-06-09
US60/210,470 2000-06-09
PCT/US2000/011878 WO2000079582A1 (fr) 1999-06-17 2000-06-16 Composition dont la degradation est regulable, a base de resine epoxy ou carbocyclique d'heteroatome et a base d'un agent de durcissement

Publications (2)

Publication Number Publication Date
JP2003502484A JP2003502484A (ja) 2003-01-21
JP4718070B2 true JP4718070B2 (ja) 2011-07-06

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EP (1) EP1194953A4 (fr)
JP (1) JP4718070B2 (fr)
KR (1) KR100372211B1 (fr)
CN (1) CN1178287C (fr)
AU (1) AU5722700A (fr)
CA (1) CA2374187A1 (fr)
MX (1) MXPA01013054A (fr)
WO (1) WO2000079582A1 (fr)

Families Citing this family (20)

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Publication number Priority date Publication date Assignee Title
JP4609617B2 (ja) * 2000-08-01 2011-01-12 日本電気株式会社 半導体装置の実装方法及び実装構造体
WO2002058108A2 (fr) 2000-11-14 2002-07-25 Henkel Loctite Corporation Matiere fluxante et de remplissage appliquee par plaquette, et ensembles electroniques fabriques a partir de celle-ci
US6800371B2 (en) 2001-03-07 2004-10-05 3M Innovative Properties Company Adhesives and adhesive compositions containing thioether groups
EP1674495A1 (fr) * 2004-12-22 2006-06-28 Huntsman Advanced Materials (Switzerland) GmbH Système de revêtement
KR100671137B1 (ko) 2004-12-30 2007-01-17 제일모직주식회사 재작업이 가능한 반도체 소자 언더필용 액상 에폭시 수지조성물 및 이를 이용한 반도체 소자
US8075721B2 (en) * 2005-10-25 2011-12-13 Henkel Corporation Low exothermic thermosetting resin compositions useful as underfill sealants and having reworkability
KR101148051B1 (ko) * 2005-12-26 2012-05-25 에스케이케미칼주식회사 에폭시 수지 조성물
JP4923946B2 (ja) * 2006-10-24 2012-04-25 ダイソー株式会社 ポリエーテル系多元共重合体およびその架橋物
JP4931079B2 (ja) * 2007-12-21 2012-05-16 パナソニック株式会社 アンダーフィル用液状熱硬化性樹脂組成物とそれを用いた半導体装置
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Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842290A (ja) * 1981-09-07 1983-03-11 日立化成工業株式会社 可撓性印刷回路用基板
JPS62295029A (ja) * 1986-06-16 1987-12-22 Hitachi Ltd 液晶表示素子
JPS63159426A (ja) * 1986-12-23 1988-07-02 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH0218412A (ja) * 1988-07-07 1990-01-22 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH05230335A (ja) * 1991-09-05 1993-09-07 Internatl Business Mach Corp <Ibm> 電子パッケージングにおける除去可能なデバイス保護のための開裂性ジエポキシド
JPH05271389A (ja) * 1992-03-25 1993-10-19 Tairumento:Kk 一液系可撓性エポキシ樹脂組成物並びにそれからなるシーリング材または接着剤
JPH06136092A (ja) * 1992-10-27 1994-05-17 New Japan Chem Co Ltd エポキシ樹脂組成物
JPH06184409A (ja) * 1992-12-18 1994-07-05 Tokuyama Soda Co Ltd 硬化性導電組成物
JPH06256468A (ja) * 1993-03-08 1994-09-13 Toray Chiokoole Kk 透水性舗装用バインダー樹脂
JPH0812741A (ja) * 1994-07-04 1996-01-16 New Japan Chem Co Ltd 液状エポキシ樹脂組成物
JPH09316421A (ja) * 1996-03-27 1997-12-09 Sumitomo Seika Chem Co Ltd 接着剤
JPH10120753A (ja) * 1996-10-17 1998-05-12 Hitachi Chem Co Ltd 封止用成形材料及び電子部品
JPH10152554A (ja) * 1996-11-21 1998-06-09 Nippon Kayaku Co Ltd エネルギー線硬化性組成物及びその硬化物
JPH1117074A (ja) * 1997-06-26 1999-01-22 Jsr Corp 半導体封止用組成物および半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932682A (en) * 1995-12-19 1999-08-03 International Business Machines Corporation Cleavable diepoxide for removable epoxy compositions
US6008266A (en) * 1996-08-14 1999-12-28 International Business Machines Corporation Photosensitive reworkable encapsulant

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842290A (ja) * 1981-09-07 1983-03-11 日立化成工業株式会社 可撓性印刷回路用基板
JPS62295029A (ja) * 1986-06-16 1987-12-22 Hitachi Ltd 液晶表示素子
JPS63159426A (ja) * 1986-12-23 1988-07-02 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH0218412A (ja) * 1988-07-07 1990-01-22 Sumitomo Bakelite Co Ltd 可撓性エポキシ樹脂組成物
JPH05230335A (ja) * 1991-09-05 1993-09-07 Internatl Business Mach Corp <Ibm> 電子パッケージングにおける除去可能なデバイス保護のための開裂性ジエポキシド
JPH05271389A (ja) * 1992-03-25 1993-10-19 Tairumento:Kk 一液系可撓性エポキシ樹脂組成物並びにそれからなるシーリング材または接着剤
JPH06136092A (ja) * 1992-10-27 1994-05-17 New Japan Chem Co Ltd エポキシ樹脂組成物
JPH06184409A (ja) * 1992-12-18 1994-07-05 Tokuyama Soda Co Ltd 硬化性導電組成物
JPH06256468A (ja) * 1993-03-08 1994-09-13 Toray Chiokoole Kk 透水性舗装用バインダー樹脂
JPH0812741A (ja) * 1994-07-04 1996-01-16 New Japan Chem Co Ltd 液状エポキシ樹脂組成物
JPH09316421A (ja) * 1996-03-27 1997-12-09 Sumitomo Seika Chem Co Ltd 接着剤
JPH10120753A (ja) * 1996-10-17 1998-05-12 Hitachi Chem Co Ltd 封止用成形材料及び電子部品
JPH10152554A (ja) * 1996-11-21 1998-06-09 Nippon Kayaku Co Ltd エネルギー線硬化性組成物及びその硬化物
JPH1117074A (ja) * 1997-06-26 1999-01-22 Jsr Corp 半導体封止用組成物および半導体装置

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WO2000079582A1 (fr) 2000-12-28
WO2000079582A9 (fr) 2001-03-15
MXPA01013054A (es) 2003-08-20
EP1194953A4 (fr) 2002-09-04
CN1178287C (zh) 2004-12-01
KR100372211B1 (ko) 2003-02-14
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EP1194953A1 (fr) 2002-04-10
CA2374187A1 (fr) 2000-12-28

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