JP4712198B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4712198B2
JP4712198B2 JP2001023509A JP2001023509A JP4712198B2 JP 4712198 B2 JP4712198 B2 JP 4712198B2 JP 2001023509 A JP2001023509 A JP 2001023509A JP 2001023509 A JP2001023509 A JP 2001023509A JP 4712198 B2 JP4712198 B2 JP 4712198B2
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Prior art keywords
substrate
film
insulating film
color filter
forming
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JP2001023509A
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Japanese (ja)
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JP2001290439A (ja
JP2001290439A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001023509A priority Critical patent/JP4712198B2/ja
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Publication of JP2001290439A5 publication Critical patent/JP2001290439A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2001023509A 2000-02-01 2001-01-31 表示装置の作製方法 Expired - Fee Related JP4712198B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001023509A JP4712198B2 (ja) 2000-02-01 2001-01-31 表示装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-24540 2000-02-01
JP2000024540 2000-02-01
JP2000024540 2000-02-01
JP2001023509A JP4712198B2 (ja) 2000-02-01 2001-01-31 表示装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011031236A Division JP5352604B2 (ja) 2000-02-01 2011-02-16 発光装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2001290439A JP2001290439A (ja) 2001-10-19
JP2001290439A5 JP2001290439A5 (enExample) 2008-03-06
JP4712198B2 true JP4712198B2 (ja) 2011-06-29

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US7579203B2 (en) 2000-04-25 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4718717B2 (ja) * 2000-05-12 2011-07-06 株式会社半導体エネルギー研究所 携帯用情報機器
TW466888B (en) * 2000-09-29 2001-12-01 Ind Tech Res Inst Pixel device structure and process of organic light emitting diode display
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JP4451054B2 (ja) * 2001-11-09 2010-04-14 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
JP2003195973A (ja) * 2001-12-21 2003-07-11 Sharp Corp 半導体装置およびその製造方法
JP4567941B2 (ja) * 2001-12-28 2010-10-27 株式会社半導体エネルギー研究所 半導体装置の作製方法及び表示装置の作製方法
JP2003202589A (ja) * 2001-12-28 2003-07-18 Fujitsu Display Technologies Corp 液晶表示装置及びその製造方法
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
US7098069B2 (en) 2002-01-24 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of preparing the same and device for fabricating the same
JP2003288983A (ja) * 2002-01-24 2003-10-10 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法、及び製造装置
JP2003282240A (ja) * 2002-03-25 2003-10-03 Pioneer Electronic Corp 有機エレクトロルミネッセンス表示パネル及び製造方法
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4693411B2 (ja) * 2002-10-30 2011-06-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004192935A (ja) * 2002-12-11 2004-07-08 Hitachi Displays Ltd 有機ｅｌ表示装置
JP4637588B2 (ja) 2003-01-15 2011-02-23 株式会社半導体エネルギー研究所 表示装置の作製方法
JP2004247373A (ja) 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
JP4747481B2 (ja) * 2003-03-24 2011-08-17 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子および表示装置
JP2004303562A (ja) * 2003-03-31 2004-10-28 Dainippon Printing Co Ltd 有機エレクトロルミネッセント素子用基板
KR100490322B1 (ko) * 2003-04-07 2005-05-17 삼성전자주식회사 유기전계발광 표시장치
US6919681B2 (en) * 2003-04-30 2005-07-19 Eastman Kodak Company Color OLED display with improved power efficiency
US6771028B1 (en) * 2003-04-30 2004-08-03 Eastman Kodak Company Drive circuitry for four-color organic light-emitting device
KR100943273B1 (ko) 2003-05-07 2010-02-23 삼성전자주식회사 4-컬러 변환 방법 및 그 장치와 이를 이용한 유기전계발광표시장치
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP4165478B2 (ja) 2003-11-07 2008-10-15 セイコーエプソン株式会社 発光装置及び電子機器
GB0327093D0 (en) * 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
KR101061730B1 (ko) 2003-11-28 2011-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 제조 방법
KR101095293B1 (ko) 2003-11-28 2011-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 제조 방법
KR100626009B1 (ko) 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치
JP4707996B2 (ja) * 2004-11-08 2011-06-22 共同印刷株式会社 フレキシブルディスプレイ及びその製造方法
TWI339835B (en) * 2005-02-03 2011-04-01 Chimei Innolux Corp Pixel structure for a color display device, organic light emitting device module, electronic device and method of rendering color of a pixel in a display device
WO2006104020A1 (en) 2005-03-25 2006-10-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and electric appliance using the same
JP5238136B2 (ja) * 2005-03-25 2013-07-17 株式会社半導体エネルギー研究所 発光装置
US8101990B2 (en) 2005-05-31 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5084177B2 (ja) * 2005-05-31 2012-11-28 株式会社半導体エネルギー研究所 半導体装置
US20070002199A1 (en) * 2005-06-30 2007-01-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US7459351B2 (en) * 2005-08-16 2008-12-02 Chunghwa Picture Tubes, Ltd. Method of manufacturing an AMOLED
JP4781082B2 (ja) * 2005-10-24 2011-09-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2924498A1 (en) * 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
JP5029473B2 (ja) * 2008-04-11 2012-09-19 大日本印刷株式会社 カラーフィルタ積層用接着性組成物
KR102112799B1 (ko) * 2008-07-10 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 전자기기
JP5620921B2 (ja) * 2008-12-05 2014-11-05 コーニンクレッカ フィリップス エヌ ヴェ プラスチック基板を有する電子デバイス及びその製造方法
KR101702329B1 (ko) 2008-12-17 2017-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
JP5134523B2 (ja) * 2008-12-17 2013-01-30 株式会社日立ハイテクノロジーズ 光学フィルム貼付け装置、光学フィルム貼付け方法、および表示用パネルの製造方法
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
CN107731931B (zh) 2009-10-21 2021-03-23 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
KR20140000064A (ko) * 2012-06-22 2014-01-02 삼성디스플레이 주식회사 광학 시트의 제조 방법 및 광학 시트를 구비하는 유기 발광 표시 장치의 제조 방법
JP6308543B2 (ja) * 2013-05-27 2018-04-11 新日鉄住金化学株式会社 有機ｅｌ表示装置の製造方法
US9269914B2 (en) * 2013-08-01 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
JP2015046391A (ja) * 2013-08-01 2015-03-12 株式会社半導体エネルギー研究所 発光装置、及び電子機器
JP2016038490A (ja) * 2014-08-08 2016-03-22 株式会社半導体エネルギー研究所 表示パネル、表示モジュール、及び電子機器
US9472605B2 (en) * 2014-11-17 2016-10-18 Apple Inc. Organic light-emitting diode display with enhanced aperture ratio
KR102456654B1 (ko) * 2014-11-26 2022-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
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TW201824222A (zh) * 2016-07-22 2018-07-01 半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置
JP7050460B2 (ja) * 2016-11-22 2022-04-08 株式会社半導体エネルギー研究所 表示装置
CN111969032B (zh) * 2020-08-31 2023-08-01 上海天马微电子有限公司 一种显示面板及显示装置

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