JP4690686B2 - Euv源 - Google Patents
Euv源 Download PDFInfo
- Publication number
- JP4690686B2 JP4690686B2 JP2004272681A JP2004272681A JP4690686B2 JP 4690686 B2 JP4690686 B2 JP 4690686B2 JP 2004272681 A JP2004272681 A JP 2004272681A JP 2004272681 A JP2004272681 A JP 2004272681A JP 4690686 B2 JP4690686 B2 JP 4690686B2
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- JP
- Japan
- Prior art keywords
- radiation
- radiation source
- chamber
- irradiation
- euv
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- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 claims abstract description 137
- 230000005540 biological transmission Effects 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000000206 photolithography Methods 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229910052724 xenon Inorganic materials 0.000 claims description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 238000005286 illumination Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000002452 interceptive effect Effects 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 238000004377 microelectronic Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Description
照射ゾーンは、第1の圧力を維持するための第1の真空発生器手段に接続される照射チャンバに位置し、
放出されたEUV放射を収集しかつ調整する手段は、第1の圧力より低い第2の圧力を維持するための第2真空発生器手段に接続される伝達チャンバに設置され、
伝達チャンバは、照射ゾーンに非常に近接して設置され、かつ光学軸に配置されたサイズの小さい絞りを介して、照射チャンバとつながり
照射ゾーンの放射生成物質の流れは、光学軸に対して横断して延びる方向に流れる。
2 伝達チャンバ
2a 壁
3 照射ゾーン
4 絞り
4a 中間壁
5、6 パワーレーザビーム
5a、6a 窓
5b 供給源
5c、5d ミラー
7 注入手段
8 再循環パイプ
9 主ポンプ
10 再循環器
11 第1の真空発生手段
12 第2の真空発生手段
13 収集器デバイス
13a 外部楕円ミラー
13b 内部楕円ミラー
14 デブリス除去デバイス
15 注入器
16 ダイバータ
20 マスク
21 マスク保持デバイス
22 半導体ウェハ
23 ウェハ支持体
24 層
25 入射部
26 光学縮小系
Claims (13)
- 極紫外線(EUV)における放射源であり、放射源は、放射生成物質の流れを照射ゾーン(3)の入口に注入する手段(7、15)と、照射ゾーン(3)を出る放射生成物質の流れをピックアップする手段(8、16)と、パワーレーザ放射(5、6)を生成し、かつ照射ゾーン(3)の放射生成物質に合焦させる手段と、照射ゾーン(3)の放射生成物質によって放出されたEUV放射を収集しかつ調整する手段(13)と、照射ゾーン(3)が位置する照射チャンバ(1)に接続される、第1の圧力(P1)を維持するための第1の真空発生器手段(11)とを備える放射源であって、
放出されたEUV放射を収集しかつ調整する手段(13)が、第1の圧力(P1)より低い第2の圧力(P2)を維持するための第2の真空発生器手段(12)に接続される伝達チャンバ(2)に設置されること、
伝達チャンバ(2)が、照射ゾーン(3)に非常に近接して設置され、かつ光学軸(I−I)に配置されたサイズの小さい絞り(4)を介して、照射チャンバ(1)とつながること、
照射ゾーン(3)の放射生成物質の流れが、光学軸(I−I)に対して横断して延びる方向(II−II)に流れること、および
パワーレーザ放射が、絞り(4)に向かって面する放射生成物質の流れの面で放射生成物質の流れに当たることを特徴とする放射源。 - 第2の圧力(P2)が、第1の圧力(P1)の10分の1以下であることを特徴とする、請求項1に記載の放射源。
- 第1の圧力(P1)は5×10−3ミリバール以下であるが、第2の圧力(P2)は5×10−4ミリバール以下であることを特徴とする、請求項2に記載の放射源。
- 放射生成物質が気体キセノンであることを特徴とする、請求項1に記載の放射源。
- 放射生成物質が液体キセノンであることを特徴とする、請求項1に記載の放射源。
- 放射生成物質がスズであることを特徴とする、請求項1に記載の放射源。
- パワーレーザ放射が、照射ゾーン(3)に収束する複数のレーザビームによって構成されることを特徴とする、請求項1に記載の放射源。
- 入射パワーレーザビーム(5、6)が、絞り(4)を通過することによって照射チャンバ(1)に入ることを特徴とする、請求項7に記載の放射源。
- パワーレーザビーム(5、6)が、絞り(4)から上流側で照射チャンバに入り、中間壁(4a)に沿って照射ゾーン(3)に向かって伝播し、絞り(4)自体は、円錐形状の中間壁(4a)に作られ、中間壁の頂部は、照射ゾーン(3)に向かって向けられることを特徴とする、請求項7に記載の放射源。
- 伝達チャンバ(2)が、光学軸(I−I)に配置されかつ照射ゾーン(3)に1つの焦点がある、1つまたは複数の楕円ミラー(13a、13b)を含むことを特徴とする、請求項1に記載の放射源。
- デブリス除去デバイスをさらに含み、該デブリス除去デバイスが、絞り(4)に面しかつ絞り(4)に近接する伝達チャンバ(2)に設けられており、照射チャンバ(1)から出て来るイオンおよび他の粒子の通過を妨害しながら、放出されたEUV放射を収集しかつ調整する手段(13)に対してEUV放射を伝達することを特徴とする、請求項1に記載の放射源。
- デブリス除去デバイス(14)が、絞り(4)から下流側に配置され、ヘリウム、アルゴン、またはクリプトンの横断方向の流れを含むことを特徴とする、請求項11に記載の放射源。
- EUV放射(B)を生成するEUV放射源(A)と、マスク(20)を支持するようになされたマスク支持デバイス(21)と、処理用の半導体ウェハ(22)を支持するようになされた半導体ウェハ支持体(23)と、半導体ウェハ(22)に、EUV放射(B)によって照射されたマスク(20)の一部の画像を投影するようになされた光学系(25、26)とを備えるフォトリソグラフィ装置であって、放射源(A)が、請求項1から12のいずれか一項に記載の放射源であり、放射源(A)が、EUV放射(B)を光学系(25、26)の入射部(25)に合焦させるように、光学系(25、26)の入射部(25)に1つの焦点を有する楕円ミラーを含むことを特徴とするフォトリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0311280 | 2003-09-26 | ||
FR0311280A FR2860385B1 (fr) | 2003-09-26 | 2003-09-26 | Source euv |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005108834A JP2005108834A (ja) | 2005-04-21 |
JP2005108834A5 JP2005108834A5 (ja) | 2011-02-24 |
JP4690686B2 true JP4690686B2 (ja) | 2011-06-01 |
Family
ID=34307180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004272681A Expired - Fee Related JP4690686B2 (ja) | 2003-09-26 | 2004-09-21 | Euv源 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7095038B2 (ja) |
EP (1) | EP1528846B1 (ja) |
JP (1) | JP4690686B2 (ja) |
AT (1) | ATE453309T1 (ja) |
DE (1) | DE602004024754D1 (ja) |
FR (1) | FR2860385B1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7439530B2 (en) | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
US7034320B2 (en) * | 2003-03-20 | 2006-04-25 | Intel Corporation | Dual hemispherical collectors |
JP2005190904A (ja) * | 2003-12-26 | 2005-07-14 | Ushio Inc | 極端紫外光源 |
US7482609B2 (en) * | 2005-02-28 | 2009-01-27 | Cymer, Inc. | LPP EUV light source drive laser system |
DE602007010765D1 (de) | 2006-05-16 | 2011-01-05 | Philips Intellectual Property | Verfahren zur erhöhung der umwandlungseffizienz einer euv- und/oder weichen röntgenstrahlenlampe und entsprechendes gerät |
US7655925B2 (en) | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
KR20100106352A (ko) * | 2007-11-08 | 2010-10-01 | 에이에스엠엘 네델란즈 비.브이. | 방사선 시스템 및 방법, 및 스펙트럼 퓨리티 필터 |
EP2083328B1 (en) * | 2008-01-28 | 2013-06-19 | Media Lario s.r.l. | Grazing incidence collector for laser produced plasma sources |
EP2182412A1 (en) * | 2008-11-04 | 2010-05-05 | ASML Netherlands B.V. | Radiation source and lithographic apparatus |
US8330131B2 (en) * | 2010-01-11 | 2012-12-11 | Media Lario, S.R.L. | Source-collector module with GIC mirror and LPP EUV light source |
WO2012177900A1 (en) | 2011-06-22 | 2012-12-27 | Research Triangle Institute, International | Bipolar microelectronic device |
US20150097107A1 (en) * | 2012-03-20 | 2015-04-09 | Fst Inc. | Apparatus for generating extreme ultraviolet light using plasma |
US9753383B2 (en) | 2012-06-22 | 2017-09-05 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
US10880979B2 (en) | 2015-11-10 | 2020-12-29 | Kla Corporation | Droplet generation for a laser produced plasma light source |
US10021773B2 (en) | 2015-11-16 | 2018-07-10 | Kla-Tencor Corporation | Laser produced plasma light source having a target material coated on a cylindrically-symmetric element |
US9918375B2 (en) * | 2015-11-16 | 2018-03-13 | Kla-Tencor Corporation | Plasma based light source having a target material coated on a cylindrically-symmetric element |
KR102024760B1 (ko) * | 2018-01-18 | 2019-09-25 | 한국원자력연구원 | 빔집속장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01137543A (ja) * | 1987-11-24 | 1989-05-30 | Fujitsu Ltd | レーザ励起x線発生装置 |
JPH0837096A (ja) * | 1994-07-26 | 1996-02-06 | Nikon Corp | X線発生装置 |
JPH10221499A (ja) * | 1997-02-07 | 1998-08-21 | Hitachi Ltd | レーザプラズマx線源およびそれを用いた半導体露光装置並びに半導体露光方法 |
JP2000089000A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | X線発生装置 |
JP2003257698A (ja) * | 2002-03-05 | 2003-09-12 | Saifasha:Yugen | レーザプラズマx線発生装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6541786B1 (en) * | 1997-05-12 | 2003-04-01 | Cymer, Inc. | Plasma pinch high energy with debris collector |
DE19962160C2 (de) * | 1999-06-29 | 2003-11-13 | Fraunhofer Ges Forschung | Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung |
US6304630B1 (en) * | 1999-12-24 | 2001-10-16 | U.S. Philips Corporation | Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit |
DE10251435B3 (de) * | 2002-10-30 | 2004-05-27 | Xtreme Technologies Gmbh | Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung |
-
2003
- 2003-09-26 FR FR0311280A patent/FR2860385B1/fr not_active Expired - Fee Related
-
2004
- 2004-09-20 DE DE602004024754T patent/DE602004024754D1/de not_active Expired - Lifetime
- 2004-09-20 AT AT04292256T patent/ATE453309T1/de not_active IP Right Cessation
- 2004-09-20 EP EP04292256A patent/EP1528846B1/fr not_active Expired - Lifetime
- 2004-09-21 JP JP2004272681A patent/JP4690686B2/ja not_active Expired - Fee Related
- 2004-09-22 US US10/946,109 patent/US7095038B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01137543A (ja) * | 1987-11-24 | 1989-05-30 | Fujitsu Ltd | レーザ励起x線発生装置 |
JPH0837096A (ja) * | 1994-07-26 | 1996-02-06 | Nikon Corp | X線発生装置 |
JPH10221499A (ja) * | 1997-02-07 | 1998-08-21 | Hitachi Ltd | レーザプラズマx線源およびそれを用いた半導体露光装置並びに半導体露光方法 |
JP2000089000A (ja) * | 1998-09-14 | 2000-03-31 | Nikon Corp | X線発生装置 |
JP2003257698A (ja) * | 2002-03-05 | 2003-09-12 | Saifasha:Yugen | レーザプラズマx線発生装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050072942A1 (en) | 2005-04-07 |
FR2860385A1 (fr) | 2005-04-01 |
DE602004024754D1 (de) | 2010-02-04 |
EP1528846A2 (fr) | 2005-05-04 |
US7095038B2 (en) | 2006-08-22 |
FR2860385B1 (fr) | 2007-06-01 |
JP2005108834A (ja) | 2005-04-21 |
ATE453309T1 (de) | 2010-01-15 |
EP1528846A3 (fr) | 2005-06-08 |
EP1528846B1 (fr) | 2009-12-23 |
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