JP4678144B2 - フォトマスク - Google Patents

フォトマスク Download PDF

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Publication number
JP4678144B2
JP4678144B2 JP2004172123A JP2004172123A JP4678144B2 JP 4678144 B2 JP4678144 B2 JP 4678144B2 JP 2004172123 A JP2004172123 A JP 2004172123A JP 2004172123 A JP2004172123 A JP 2004172123A JP 4678144 B2 JP4678144 B2 JP 4678144B2
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Japan
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Japanese (ja)
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JP2005353789A5 (enExample
JP2005353789A (ja
Inventor
肇 山岸
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Sony Corp
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Sony Corp
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Priority to JP2004172123A priority Critical patent/JP4678144B2/ja
Publication of JP2005353789A publication Critical patent/JP2005353789A/ja
Publication of JP2005353789A5 publication Critical patent/JP2005353789A5/ja
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JP2004172123A 2004-06-10 2004-06-10 フォトマスク Expired - Fee Related JP4678144B2 (ja)

Priority Applications (1)

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JP2004172123A JP4678144B2 (ja) 2004-06-10 2004-06-10 フォトマスク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004172123A JP4678144B2 (ja) 2004-06-10 2004-06-10 フォトマスク

Publications (3)

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JP2005353789A JP2005353789A (ja) 2005-12-22
JP2005353789A5 JP2005353789A5 (enExample) 2007-05-24
JP4678144B2 true JP4678144B2 (ja) 2011-04-27

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JP2004172123A Expired - Fee Related JP4678144B2 (ja) 2004-06-10 2004-06-10 フォトマスク

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JP (1) JP4678144B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11495735B2 (en) 2016-09-28 2022-11-08 Tdk Corporation Spin-current magnetization rotational element and element assembly

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4997789B2 (ja) * 2006-02-23 2012-08-08 Ｔｄｋ株式会社 磁気メモリ
US20070246787A1 (en) * 2006-03-29 2007-10-25 Lien-Chang Wang On-plug magnetic tunnel junction devices based on spin torque transfer switching
JP4834834B2 (ja) * 2006-05-08 2011-12-14 国立大学法人東北大学 トンネル磁気抵抗素子、不揮発性磁気メモリ、発光素子および３端子素子
JP2009252878A (ja) * 2008-04-03 2009-10-29 Renesas Technology Corp 磁気記憶装置
JP2019087688A (ja) 2017-11-09 2019-06-06 Tdk株式会社 磁気センサ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3638563B2 (ja) * 2002-03-27 2005-04-13 株式会社東芝 磁気抵抗効果素子およびこれを用いた磁気メモリ
JP2004128015A (ja) * 2002-09-30 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
JP3684225B2 (ja) * 2002-09-30 2005-08-17 株式会社東芝 磁気抵抗効果素子および磁気メモリ
JP2005064075A (ja) * 2003-08-20 2005-03-10 Toshiba Corp 磁気記憶装置及びその製造方法
JP2005317739A (ja) * 2004-04-28 2005-11-10 Toshiba Corp 磁気記憶装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11495735B2 (en) 2016-09-28 2022-11-08 Tdk Corporation Spin-current magnetization rotational element and element assembly

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JP2005353789A (ja) 2005-12-22

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