JP4666783B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4666783B2
JP4666783B2 JP2001022703A JP2001022703A JP4666783B2 JP 4666783 B2 JP4666783 B2 JP 4666783B2 JP 2001022703 A JP2001022703 A JP 2001022703A JP 2001022703 A JP2001022703 A JP 2001022703A JP 4666783 B2 JP4666783 B2 JP 4666783B2
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Japan
Prior art keywords
insulating film
film
gate electrode
semiconductor
transistor
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Expired - Fee Related
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JP2001022703A
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English (en)
Japanese (ja)
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JP2001298100A (ja
JP2001298100A5 (enExample
Inventor
潤 小山
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2001298100A5 publication Critical patent/JP2001298100A5/ja
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  • Liquid Crystal (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Read Only Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001022703A 2000-02-01 2001-01-31 半導体装置の作製方法 Expired - Fee Related JP4666783B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001022703A JP4666783B2 (ja) 2000-02-01 2001-01-31 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000023656 2000-02-01
JP2000-23656 2000-02-01
JP2001022703A JP4666783B2 (ja) 2000-02-01 2001-01-31 半導体装置の作製方法

Publications (3)

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JP2001298100A JP2001298100A (ja) 2001-10-26
JP2001298100A5 JP2001298100A5 (enExample) 2008-03-13
JP4666783B2 true JP4666783B2 (ja) 2011-04-06

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JP2001022703A Expired - Fee Related JP4666783B2 (ja) 2000-02-01 2001-01-31 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4498685B2 (ja) * 2002-03-22 2010-07-07 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
WO2004006264A2 (en) * 2002-07-08 2004-01-15 Koninklijke Philips Electronics N.V. Erasable and programmable non-volatile cell
WO2007138754A1 (ja) * 2006-05-31 2007-12-06 Sharp Kabushiki Kaisha 半導体装置、その製造方法、及び、表示装置
US7791172B2 (en) * 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
KR100873705B1 (ko) 2007-06-22 2008-12-12 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101404439B1 (ko) * 2007-06-29 2014-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치 및 전자 기기
JP5297610B2 (ja) * 2007-08-10 2013-09-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4592739B2 (ja) * 2007-11-15 2010-12-08 シャープ株式会社 表示装置、携帯機器
US9082652B2 (en) 2010-03-23 2015-07-14 Sharp Kabushiki Kaisha Semiconductor device, active matrix substrate, and display device
KR102021808B1 (ko) * 2012-12-04 2019-09-17 삼성전자주식회사 3차원 구조의 메모리 셀 어레이를 포함하는 불휘발성 메모리

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2887506B2 (ja) * 1990-07-13 1999-04-26 カシオ計算機株式会社 薄膜トランジスタメモリ
US5471422A (en) * 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
JPH09135030A (ja) * 1995-11-08 1997-05-20 Hitachi Ltd 半導体集積回路装置およびそれを用いたコンピュータシステム、ならびに半導体集積回路装置の製造方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
JP2000252373A (ja) * 1999-03-04 2000-09-14 Toshiba Corp 不揮発性半導体メモリ、不揮発性半導体メモリを備えた表示装置及びその製造方法
JP2000294658A (ja) * 1999-04-02 2000-10-20 Matsushita Electronics Industry Corp 不揮発性半導体記憶装置及びその駆動方法

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Publication number Publication date
JP2001298100A (ja) 2001-10-26

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