JP4665333B2 - ポジ型感光性樹脂前駆体組成物 - Google Patents

ポジ型感光性樹脂前駆体組成物 Download PDF

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Publication number
JP4665333B2
JP4665333B2 JP2001122334A JP2001122334A JP4665333B2 JP 4665333 B2 JP4665333 B2 JP 4665333B2 JP 2001122334 A JP2001122334 A JP 2001122334A JP 2001122334 A JP2001122334 A JP 2001122334A JP 4665333 B2 JP4665333 B2 JP 4665333B2
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JP
Japan
Prior art keywords
group
compound
general formula
carbon atoms
varnish
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Expired - Lifetime
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JP2001122334A
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English (en)
Japanese (ja)
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JP2002221794A5 (https=
JP2002221794A (ja
Inventor
充史 諏訪
一登 三好
真佐夫 富川
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Toray Industries Inc
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Toray Industries Inc
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Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP2001122334A priority Critical patent/JP4665333B2/ja
Priority to US09/985,059 priority patent/US6593043B2/en
Priority to EP01127075.8A priority patent/EP1209523B1/en
Priority to TW90129112A priority patent/TW573216B/zh
Priority to KR1020010073741A priority patent/KR100788537B1/ko
Priority to CNB011394781A priority patent/CN1246389C/zh
Publication of JP2002221794A publication Critical patent/JP2002221794A/ja
Publication of JP2002221794A5 publication Critical patent/JP2002221794A5/ja
Application granted granted Critical
Publication of JP4665333B2 publication Critical patent/JP4665333B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2001122334A 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物 Expired - Lifetime JP4665333B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001122334A JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物
US09/985,059 US6593043B2 (en) 2000-11-27 2001-11-01 Composition of positive photosensitive resin precursor, and display device thereof
EP01127075.8A EP1209523B1 (en) 2000-11-27 2001-11-14 Composition of positive photosensitive resin precursor, and display device made thereof
TW90129112A TW573216B (en) 2000-11-27 2001-11-23 Composition of positive photosensitive resin precursor, and display device thereof
KR1020010073741A KR100788537B1 (ko) 2000-11-27 2001-11-26 포지티브형 감광성 수지 전구체 조성물 및 그것을 이용한표시 장치
CNB011394781A CN1246389C (zh) 2000-11-27 2001-11-27 正型感光性树脂前驱体组合物及使用其的显示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000359401 2000-11-27
JP2000-359401 2000-11-27
JP2001122334A JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物

Publications (3)

Publication Number Publication Date
JP2002221794A JP2002221794A (ja) 2002-08-09
JP2002221794A5 JP2002221794A5 (https=) 2008-05-29
JP4665333B2 true JP4665333B2 (ja) 2011-04-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001122334A Expired - Lifetime JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物

Country Status (6)

Country Link
US (1) US6593043B2 (https=)
EP (1) EP1209523B1 (https=)
JP (1) JP4665333B2 (https=)
KR (1) KR100788537B1 (https=)
CN (1) CN1246389C (https=)
TW (1) TW573216B (https=)

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JP4799740B2 (ja) * 2001-01-17 2011-10-26 日東電工株式会社 配線回路基板用樹脂組成物、配線回路基板用基材および配線回路基板
TW574620B (en) * 2001-02-26 2004-02-01 Toray Industries Precursor composition of positive photosensitive resin and display device using it
CN100336137C (zh) * 2002-01-28 2007-09-05 捷时雅株式会社 形成电介体的光敏组合物以及利用该组合物的电介体
US7214455B2 (en) * 2002-05-29 2007-05-08 Toray Industries, Inc. Photosensitive resin composition and process for producing heat-resistant resin film
US6887643B2 (en) * 2002-08-05 2005-05-03 Toray Industries, Inc. Photosensitive resin precursor composition
JP4360168B2 (ja) * 2002-10-01 2009-11-11 東レ株式会社 ポジ型感光性樹脂組成物
US20040238846A1 (en) * 2003-05-30 2004-12-02 Georg Wittmann Organic electronic device
CN100555078C (zh) * 2003-06-02 2009-10-28 东丽株式会社 感光树脂组合物及用其制备的电子元件和显示装置
TWI360565B (en) * 2003-07-09 2012-03-21 Toray Industries Photosensitive resin precursor composition
WO2005010615A1 (ja) * 2003-07-28 2005-02-03 Nissan Chemical Industries, Ltd. ポジ型感光性樹脂組成物
TWI363249B (en) * 2003-10-15 2012-05-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
JP2005309032A (ja) * 2004-04-21 2005-11-04 Toray Ind Inc ポジ型感光性樹脂組成物
EP1662319A3 (en) * 2004-11-24 2009-05-27 Toray Industries, Inc. Photosensitive resin composition
KR100787352B1 (ko) * 2005-02-23 2007-12-18 주식회사 하이닉스반도체 하드마스크용 조성물 및 이를 이용한 반도체 소자의 패턴형성 방법
US8092861B2 (en) * 2007-09-05 2012-01-10 United Microelectronics Corp. Method of fabricating an ultra dielectric constant (K) dielectric layer
KR100914063B1 (ko) * 2007-11-30 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
KR100914064B1 (ko) * 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
CN102016718B (zh) * 2008-05-07 2013-10-16 住友电木株式会社 正型感光性树脂组合物、固化膜、保护膜和绝缘膜以及使用它们的半导体装置和显示装置
KR101023089B1 (ko) * 2008-09-29 2011-03-24 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2010041795A1 (en) * 2008-10-07 2010-04-15 Cheil Industries Inc. Positive photosensitive resin composition
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101818788B1 (ko) * 2010-03-15 2018-01-15 닛산 가가쿠 고교 가부시키 가이샤 폴리아믹산에스테르와 폴리아믹산을 함유하는 액정 배향제 및 액정 배향막
KR101816940B1 (ko) * 2010-03-15 2018-01-09 닛산 가가쿠 고교 가부시키 가이샤 말단을 수식한 폴리아믹산에스테르 함유 액정 배향제, 및 액정 배향막
JP5858987B2 (ja) 2010-05-04 2016-02-10 エルジー・ケム・リミテッド ネガティブフォトレジスト組成物および素子のパターニング方法
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101400186B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101600653B1 (ko) * 2012-12-26 2016-03-07 제일모직주식회사 봉지용 조성물, 이를 포함하는 장벽층 및 이를 포함하는 봉지화된 장치
KR102058651B1 (ko) 2013-02-27 2019-12-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 그를 이용한 표시 장치의 제조 방법
KR101700994B1 (ko) * 2013-07-01 2017-01-31 주식회사 엘지화학 광활성 물질의 분리방법
WO2015060366A1 (ja) * 2013-10-23 2015-04-30 日産化学工業株式会社 液晶配向剤、液晶配向膜、及び液晶表示素子
US9477148B1 (en) 2015-05-26 2016-10-25 Industrial Technology Research Institute Polymer, method for preparing the same, and a photosensitive resin composition thereof
WO2019146611A1 (ja) * 2018-01-29 2019-08-01 富士フイルム株式会社 感光性樹脂組成物、樹脂、硬化膜、積層体、硬化膜の製造方法、半導体デバイス
CN115685681B (zh) 2021-07-27 2025-05-20 吉林奥来德光电材料股份有限公司 树脂组合物、树脂膜及显示器件
WO2023021961A1 (ja) * 2021-08-18 2023-02-23 日東電工株式会社 ポリイミド前駆体組成物、ポリイミド樹脂、および回路基板
CN114316263B (zh) * 2022-01-17 2023-02-03 深圳职业技术学院 交联型聚酰胺酸酯、其制备方法、包含其的聚酰亚胺组合物及聚酰亚胺树脂膜的制备方法

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Also Published As

Publication number Publication date
CN1246389C (zh) 2006-03-22
US20020090564A1 (en) 2002-07-11
EP1209523A2 (en) 2002-05-29
CN1356356A (zh) 2002-07-03
EP1209523A3 (en) 2003-09-24
KR20020041302A (ko) 2002-06-01
KR100788537B1 (ko) 2007-12-24
US6593043B2 (en) 2003-07-15
EP1209523B1 (en) 2015-08-26
JP2002221794A (ja) 2002-08-09
TW573216B (en) 2004-01-21

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