TW573216B - Composition of positive photosensitive resin precursor, and display device thereof - Google Patents

Composition of positive photosensitive resin precursor, and display device thereof Download PDF

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Publication number
TW573216B
TW573216B TW90129112A TW90129112A TW573216B TW 573216 B TW573216 B TW 573216B TW 90129112 A TW90129112 A TW 90129112A TW 90129112 A TW90129112 A TW 90129112A TW 573216 B TW573216 B TW 573216B
Authority
TW
Taiwan
Prior art keywords
group
general formula
precursor composition
compound
photosensitive resin
Prior art date
Application number
TW90129112A
Other languages
English (en)
Chinese (zh)
Inventor
Mitsuhito Suwa
Kazuto Miyoshi
Masao Tomikawa
Original Assignee
Toray Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries filed Critical Toray Industries
Application granted granted Critical
Publication of TW573216B publication Critical patent/TW573216B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW90129112A 2000-11-27 2001-11-23 Composition of positive photosensitive resin precursor, and display device thereof TW573216B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000359401 2000-11-27
JP2001122334A JP4665333B2 (ja) 2000-11-27 2001-04-20 ポジ型感光性樹脂前駆体組成物

Publications (1)

Publication Number Publication Date
TW573216B true TW573216B (en) 2004-01-21

Family

ID=26604615

Family Applications (1)

Application Number Title Priority Date Filing Date
TW90129112A TW573216B (en) 2000-11-27 2001-11-23 Composition of positive photosensitive resin precursor, and display device thereof

Country Status (6)

Country Link
US (1) US6593043B2 (https=)
EP (1) EP1209523B1 (https=)
JP (1) JP4665333B2 (https=)
KR (1) KR100788537B1 (https=)
CN (1) CN1246389C (https=)
TW (1) TW573216B (https=)

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US20040238846A1 (en) * 2003-05-30 2004-12-02 Georg Wittmann Organic electronic device
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TWI360565B (en) * 2003-07-09 2012-03-21 Toray Industries Photosensitive resin precursor composition
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TWI363249B (en) * 2003-10-15 2012-05-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
JP2005309032A (ja) * 2004-04-21 2005-11-04 Toray Ind Inc ポジ型感光性樹脂組成物
EP1662319A3 (en) * 2004-11-24 2009-05-27 Toray Industries, Inc. Photosensitive resin composition
KR100787352B1 (ko) * 2005-02-23 2007-12-18 주식회사 하이닉스반도체 하드마스크용 조성물 및 이를 이용한 반도체 소자의 패턴형성 방법
US8092861B2 (en) * 2007-09-05 2012-01-10 United Microelectronics Corp. Method of fabricating an ultra dielectric constant (K) dielectric layer
KR100914063B1 (ko) * 2007-11-30 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
KR100914064B1 (ko) * 2008-03-19 2009-08-28 제일모직주식회사 포지티브형 감광성 수지 조성물
CN102016718B (zh) * 2008-05-07 2013-10-16 住友电木株式会社 正型感光性树脂组合物、固化膜、保护膜和绝缘膜以及使用它们的半导体装置和显示装置
KR101023089B1 (ko) * 2008-09-29 2011-03-24 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2010041795A1 (en) * 2008-10-07 2010-04-15 Cheil Industries Inc. Positive photosensitive resin composition
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR101333698B1 (ko) * 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101333704B1 (ko) * 2009-12-29 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
KR101818788B1 (ko) * 2010-03-15 2018-01-15 닛산 가가쿠 고교 가부시키 가이샤 폴리아믹산에스테르와 폴리아믹산을 함유하는 액정 배향제 및 액정 배향막
KR101816940B1 (ko) * 2010-03-15 2018-01-09 닛산 가가쿠 고교 가부시키 가이샤 말단을 수식한 폴리아믹산에스테르 함유 액정 배향제, 및 액정 배향막
JP5858987B2 (ja) 2010-05-04 2016-02-10 エルジー・ケム・リミテッド ネガティブフォトレジスト組成物および素子のパターニング方法
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101400192B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101400186B1 (ko) 2010-12-31 2014-05-27 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101600653B1 (ko) * 2012-12-26 2016-03-07 제일모직주식회사 봉지용 조성물, 이를 포함하는 장벽층 및 이를 포함하는 봉지화된 장치
KR102058651B1 (ko) 2013-02-27 2019-12-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 그를 이용한 표시 장치의 제조 방법
KR101700994B1 (ko) * 2013-07-01 2017-01-31 주식회사 엘지화학 광활성 물질의 분리방법
WO2015060366A1 (ja) * 2013-10-23 2015-04-30 日産化学工業株式会社 液晶配向剤、液晶配向膜、及び液晶表示素子
US9477148B1 (en) 2015-05-26 2016-10-25 Industrial Technology Research Institute Polymer, method for preparing the same, and a photosensitive resin composition thereof
WO2019146611A1 (ja) * 2018-01-29 2019-08-01 富士フイルム株式会社 感光性樹脂組成物、樹脂、硬化膜、積層体、硬化膜の製造方法、半導体デバイス
CN115685681B (zh) 2021-07-27 2025-05-20 吉林奥来德光电材料股份有限公司 树脂组合物、树脂膜及显示器件
WO2023021961A1 (ja) * 2021-08-18 2023-02-23 日東電工株式会社 ポリイミド前駆体組成物、ポリイミド樹脂、および回路基板
CN114316263B (zh) * 2022-01-17 2023-02-03 深圳职业技术学院 交联型聚酰胺酸酯、其制备方法、包含其的聚酰亚胺组合物及聚酰亚胺树脂膜的制备方法

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Also Published As

Publication number Publication date
CN1246389C (zh) 2006-03-22
JP4665333B2 (ja) 2011-04-06
US20020090564A1 (en) 2002-07-11
EP1209523A2 (en) 2002-05-29
CN1356356A (zh) 2002-07-03
EP1209523A3 (en) 2003-09-24
KR20020041302A (ko) 2002-06-01
KR100788537B1 (ko) 2007-12-24
US6593043B2 (en) 2003-07-15
EP1209523B1 (en) 2015-08-26
JP2002221794A (ja) 2002-08-09

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