JP4664725B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP4664725B2
JP4664725B2 JP2005122016A JP2005122016A JP4664725B2 JP 4664725 B2 JP4664725 B2 JP 4664725B2 JP 2005122016 A JP2005122016 A JP 2005122016A JP 2005122016 A JP2005122016 A JP 2005122016A JP 4664725 B2 JP4664725 B2 JP 4664725B2
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semiconductor
layer
semiconductor layer
type
energy
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JP2005122016A
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English (en)
Japanese (ja)
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JP2006303147A (ja
JP2006303147A5 (enExample
Inventor
健 北谷
雅博 青木
朋信 土屋
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日本オプネクスト株式会社
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Priority to JP2005122016A priority Critical patent/JP4664725B2/ja
Priority to US11/202,285 priority patent/US7329894B2/en
Publication of JP2006303147A publication Critical patent/JP2006303147A/ja
Publication of JP2006303147A5 publication Critical patent/JP2006303147A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS

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  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
JP2005122016A 2005-04-20 2005-04-20 半導体レーザ素子 Expired - Fee Related JP4664725B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005122016A JP4664725B2 (ja) 2005-04-20 2005-04-20 半導体レーザ素子
US11/202,285 US7329894B2 (en) 2005-04-20 2005-08-12 Semiconductor laser device and semiconductor optical modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005122016A JP4664725B2 (ja) 2005-04-20 2005-04-20 半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2006303147A JP2006303147A (ja) 2006-11-02
JP2006303147A5 JP2006303147A5 (enExample) 2007-12-27
JP4664725B2 true JP4664725B2 (ja) 2011-04-06

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JP2005122016A Expired - Fee Related JP4664725B2 (ja) 2005-04-20 2005-04-20 半導体レーザ素子

Country Status (2)

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US (1) US7329894B2 (enExample)
JP (1) JP4664725B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920506B2 (ja) * 2007-06-25 2012-04-18 日本電信電話株式会社 電界吸収型光変調器
KR100961109B1 (ko) * 2008-02-11 2010-06-07 삼성엘이디 주식회사 ＧａＮ계 반도체 발광소자
WO2010073391A1 (ja) * 2008-12-26 2010-07-01 富士通株式会社 熱電変換素子及びその製造方法並びに電子機器
JP5313730B2 (ja) 2009-03-16 2013-10-09 日本オクラロ株式会社 光送信機及び光送信モジュール
GB0911134D0 (en) * 2009-06-26 2009-08-12 Univ Surrey Optoelectronic devices
US8290011B2 (en) * 2010-11-22 2012-10-16 The United States Of America, As Represented By The Secretary Of The Navy Interband cascade lasers
JP2012118168A (ja) 2010-11-30 2012-06-21 Mitsubishi Electric Corp 電界吸収型変調器及び光半導体装置
FR2973945B1 (fr) * 2011-04-11 2013-05-10 Centre Nat Rech Scient Heterostructure semi-conductrice et cellule photovoltaïque comprenant une telle heterostructure
US10879420B2 (en) 2018-07-09 2020-12-29 University Of Iowa Research Foundation Cascaded superlattice LED system
WO2025173508A1 (ja) * 2024-02-13 2025-08-21 古河電気工業株式会社 半導体発光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755940B2 (ja) 1987-01-20 1998-05-25 三洋電機株式会社 発光素子
JP2950853B2 (ja) * 1989-07-10 1999-09-20 株式会社日立製作所 半導体光素子
JPH0555703A (ja) * 1991-05-15 1993-03-05 Fujitsu Ltd 面発光レーザ装置
JPH0773140B2 (ja) * 1993-02-09 1995-08-02 日本電気株式会社 半導体レーザ
JP3302790B2 (ja) * 1993-06-30 2002-07-15 株式会社東芝 半導体発光装置
JPH0870161A (ja) * 1994-08-30 1996-03-12 Furukawa Electric Co Ltd:The 半導体発光素子
JPH08262381A (ja) * 1995-03-20 1996-10-11 Fujitsu Ltd 半導体装置
JPH1079554A (ja) * 1996-09-04 1998-03-24 Mitsubishi Electric Corp 光半導体装置
JP3223969B2 (ja) * 1998-11-27 2001-10-29 日本電気株式会社 半導体レーザ
JP2002134842A (ja) * 2000-10-26 2002-05-10 Hitachi Ltd 半導体レーザ装置
JP2003142783A (ja) * 2001-11-08 2003-05-16 Hitachi Ltd 半導体レーザおよびそれを用いた光モジュール
JP2004179274A (ja) 2002-11-26 2004-06-24 Hitachi Ltd 光半導体装置
JP4580623B2 (ja) 2003-04-16 2010-11-17 株式会社日立製作所 化合物半導体素子及びそれを用いた半導体モジュール

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US20060237710A1 (en) 2006-10-26
JP2006303147A (ja) 2006-11-02
US7329894B2 (en) 2008-02-12

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