JP4659662B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP4659662B2
JP4659662B2 JP2006099577A JP2006099577A JP4659662B2 JP 4659662 B2 JP4659662 B2 JP 4659662B2 JP 2006099577 A JP2006099577 A JP 2006099577A JP 2006099577 A JP2006099577 A JP 2006099577A JP 4659662 B2 JP4659662 B2 JP 4659662B2
Authority
JP
Japan
Prior art keywords
film
region
semiconductor substrate
oxide film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006099577A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006186403A (ja
JP2006186403A5 (enExample
Inventor
吉紘 熊崎
Original Assignee
ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー filed Critical ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー
Priority to JP2006099577A priority Critical patent/JP4659662B2/ja
Publication of JP2006186403A publication Critical patent/JP2006186403A/ja
Publication of JP2006186403A5 publication Critical patent/JP2006186403A5/ja
Application granted granted Critical
Publication of JP4659662B2 publication Critical patent/JP4659662B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2006099577A 1997-04-28 2006-03-31 半導体装置及びその製造方法 Expired - Fee Related JP4659662B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006099577A JP4659662B2 (ja) 1997-04-28 2006-03-31 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12494397 1997-04-28
JP20245297 1997-07-11
JP2006099577A JP4659662B2 (ja) 1997-04-28 2006-03-31 半導体装置及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10045692A Division JPH1187664A (ja) 1997-04-28 1998-02-26 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2006186403A JP2006186403A (ja) 2006-07-13
JP2006186403A5 JP2006186403A5 (enExample) 2006-08-24
JP4659662B2 true JP4659662B2 (ja) 2011-03-30

Family

ID=36739214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006099577A Expired - Fee Related JP4659662B2 (ja) 1997-04-28 2006-03-31 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP4659662B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5579577B2 (ja) * 2010-11-09 2014-08-27 ラピスセミコンダクタ株式会社 半導体装置の製造方法
US9847133B2 (en) 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
US11177180B2 (en) * 2020-02-11 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Profile control of a gap fill structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155968A (ja) * 1983-02-25 1984-09-05 Toshiba Corp 半導体記憶装置
JPS6079768A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd 半導体集積回路装置
JPS61281558A (ja) * 1985-06-07 1986-12-11 Toshiba Corp Ｍｏｓ型半導体装置
JPH02125470A (ja) * 1988-06-15 1990-05-14 Seiko Instr Inc 半導体不揮発性メモリ
JPH03253072A (ja) * 1990-03-02 1991-11-12 Hitachi Ltd 半導体装置
JPH05267619A (ja) * 1992-01-23 1993-10-15 Toshiba Corp 半導体装置および半導体装置の製造方法
JP3344598B2 (ja) * 1993-11-25 2002-11-11 株式会社デンソー 半導体不揮発メモリ装置
JPH08130295A (ja) * 1994-09-08 1996-05-21 Mitsubishi Electric Corp 半導体記憶装置および半導体装置
JPH08222710A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
JPH08288379A (ja) * 1995-02-17 1996-11-01 Nippon Steel Corp 半導体装置及びその製造方法
JPH0955483A (ja) * 1995-06-09 1997-02-25 Mitsubishi Electric Corp 半導体記憶装置
JP4053647B2 (ja) * 1997-02-27 2008-02-27 株式会社東芝 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
JP2006186403A (ja) 2006-07-13

Similar Documents

Publication Publication Date Title
US7038269B2 (en) Non-volatile semiconductor memory with single layer gate structure
US8253186B2 (en) Semiconductor device having controllable transistor threshold voltage
KR101166268B1 (ko) Ｄｕａｌ-ＳＴＩ(Ｓｈａｌｌｏｗ ＴｒｅｎｃｈＩｓｏｌａｔｉｏｎ)의 반도체 장치 및 그 제조 방법
KR100616389B1 (ko) 반도체 장치 및 그 제조 방법
US20050242377A1 (en) Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device
US20030049903A1 (en) Semiconductor device and method of manufacturing the same
JP3420145B2 (ja) 半導体集積回路装置の製造方法
JP2006286720A (ja) 半導体装置およびその製造方法
US20020117706A1 (en) Non-volatile semiconductor memory device and method of manufacturing the same
JP2002110976A (ja) 半導体装置及び半導体装置の製造方法
US6373119B1 (en) Semiconductor device and method of manufacturing the same
US6700154B1 (en) EEPROM cell with trench coupling capacitor
US20020109180A1 (en) Nonvolatile semiconductor memory device and method of manufacturing the same
JPH09205154A (ja) 半導体装置及びその製造方法
US6632715B2 (en) Semiconductor device having nonvolatile memory cell and field effect transistor
US6251721B1 (en) Semiconductor device and method of manufacturing the same
JP4659662B2 (ja) 半導体装置及びその製造方法
US6534364B1 (en) Tunnel diode layout for an EEPROM cell for protecting the tunnel diode region
CN100573870C (zh) 双浅沟绝缘半导体装置及其制造方法
JP3340361B2 (ja) 半導体装置及びその製造方法
KR20030033810A (ko) 매몰 트랜지스터를 갖는 고전압 반도체 소자 및 그 제조방법
KR20020061255A (ko) 고전압 트랜지스터와 저전압 트랜지스터를 갖는 반도체소자 및 그 제조방법
KR20000071585A (ko) Ｍｏｓｆｅｔ에 접속된 트랜치형 저장 전극
JP2003023115A (ja) 不揮発性半導体記憶装置の製造方法及び不揮発性半導体記憶装置
JPH0917853A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20060417

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060427

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060427

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100112

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100319

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100325

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100507

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100512

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100803

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20100812

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101029

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101130

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101227

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140107

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140107

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140107

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees