JP4658182B2 - 研磨パッドのプロファイル測定方法 - Google Patents

研磨パッドのプロファイル測定方法 Download PDF

Info

Publication number
JP4658182B2
JP4658182B2 JP2008288107A JP2008288107A JP4658182B2 JP 4658182 B2 JP4658182 B2 JP 4658182B2 JP 2008288107 A JP2008288107 A JP 2008288107A JP 2008288107 A JP2008288107 A JP 2008288107A JP 4658182 B2 JP4658182 B2 JP 4658182B2
Authority
JP
Japan
Prior art keywords
polishing pad
dresser
polishing
dressing
profile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008288107A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009148877A (ja
Inventor
計介 並木
暁 山木
哲二 戸川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2008288107A priority Critical patent/JP4658182B2/ja
Priority to US12/292,685 priority patent/US8870625B2/en
Priority to KR1020080118622A priority patent/KR101005043B1/ko
Priority to TW105130310A priority patent/TWI572447B/zh
Priority to TW103122476A priority patent/TWI565561B/zh
Priority to TW097145887A priority patent/TWI458589B/zh
Publication of JP2009148877A publication Critical patent/JP2009148877A/ja
Priority to KR1020100093696A priority patent/KR101059935B1/ko
Application granted granted Critical
Publication of JP4658182B2 publication Critical patent/JP4658182B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2008288107A 2007-11-28 2008-11-10 研磨パッドのプロファイル測定方法 Active JP4658182B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008288107A JP4658182B2 (ja) 2007-11-28 2008-11-10 研磨パッドのプロファイル測定方法
US12/292,685 US8870625B2 (en) 2007-11-28 2008-11-24 Method and apparatus for dressing polishing pad, profile measuring method, substrate polishing apparatus, and substrate polishing method
TW105130310A TWI572447B (zh) 2007-11-28 2008-11-27 硏磨墊之修整裝置
TW103122476A TWI565561B (zh) 2007-11-28 2008-11-27 硏磨墊之修整方法與裝置、基板硏磨裝置及基板硏磨方法
KR1020080118622A KR101005043B1 (ko) 2007-11-28 2008-11-27 프로파일측정방법
TW097145887A TWI458589B (zh) 2007-11-28 2008-11-27 輪廓量測方法
KR1020100093696A KR101059935B1 (ko) 2007-11-28 2010-09-28 폴리싱패드의 드레싱방법과 장치, 기판폴리싱장치, 및 기판폴리싱방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007307458 2007-11-28
JP2008288107A JP4658182B2 (ja) 2007-11-28 2008-11-10 研磨パッドのプロファイル測定方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010106770A Division JP5325831B2 (ja) 2007-11-28 2010-05-06 研磨パッドのドレッシング方法、基板研磨方法

Publications (2)

Publication Number Publication Date
JP2009148877A JP2009148877A (ja) 2009-07-09
JP4658182B2 true JP4658182B2 (ja) 2011-03-23

Family

ID=40918660

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008288107A Active JP4658182B2 (ja) 2007-11-28 2008-11-10 研磨パッドのプロファイル測定方法
JP2010106770A Active JP5325831B2 (ja) 2007-11-28 2010-05-06 研磨パッドのドレッシング方法、基板研磨方法
JP2013109883A Active JP5530002B2 (ja) 2007-11-28 2013-05-24 研磨パッドのドレッシング装置、及び基板研磨装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010106770A Active JP5325831B2 (ja) 2007-11-28 2010-05-06 研磨パッドのドレッシング方法、基板研磨方法
JP2013109883A Active JP5530002B2 (ja) 2007-11-28 2013-05-24 研磨パッドのドレッシング装置、及び基板研磨装置

Country Status (3)

Country Link
JP (3) JP4658182B2 (zh)
KR (2) KR101005043B1 (zh)
TW (3) TWI458589B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5263099B2 (ja) * 2009-09-14 2013-08-14 トヨタ自動車株式会社 研磨ブラシの成形方法及び装置
TWI492288B (zh) * 2010-02-11 2015-07-11 聯華電子股份有限公司 控制晶圓研磨製程之方法
JP5511600B2 (ja) 2010-09-09 2014-06-04 株式会社荏原製作所 研磨装置
US8758085B2 (en) * 2010-10-21 2014-06-24 Applied Materials, Inc. Method for compensation of variability in chemical mechanical polishing consumables
JP5896625B2 (ja) 2011-06-02 2016-03-30 株式会社荏原製作所 研磨装置に使用される研磨パッドの研磨面を監視する方法および装置
JP6193623B2 (ja) * 2012-06-13 2017-09-06 株式会社荏原製作所 研磨方法及び研磨装置
US9067295B2 (en) * 2012-07-25 2015-06-30 Applied Materials, Inc. Monitoring retaining ring thickness and pressure control
JP5927083B2 (ja) 2012-08-28 2016-05-25 株式会社荏原製作所 ドレッシングプロセスの監視方法および研磨装置
JP5964262B2 (ja) * 2013-02-25 2016-08-03 株式会社荏原製作所 研磨装置に使用される研磨部材のプロファイル調整方法、および研磨装置
KR101415982B1 (ko) * 2013-03-29 2014-07-08 주식회사 케이씨텍 화학 기계적 연마 시스템의 컨디셔너 및 컨디셔닝 방법
KR101498507B1 (ko) * 2013-06-05 2015-03-04 주식회사 브러쉬텍 반도체 웨이퍼 세척용 브러쉬 에이징 장치
KR101527769B1 (ko) * 2013-10-24 2015-06-11 주식회사 케이씨텍 화학 기계적 연마 시스템의 저압 컨디셔너
JP6263445B2 (ja) * 2014-06-06 2018-01-17 株式会社荏原製作所 研磨装置および研磨方法
JP6307428B2 (ja) * 2014-12-26 2018-04-04 株式会社荏原製作所 研磨装置およびその制御方法
TWI574778B (zh) * 2015-02-11 2017-03-21 國立勤益科技大學 硏磨拋光機
US9669514B2 (en) 2015-05-29 2017-06-06 Taiwan Semiconductor Manufacturing Co., Ltd System and method for polishing substrate
US9970754B2 (en) 2015-08-26 2018-05-15 Industrial Technology Research Institute Surface measurement device and method thereof
US9835449B2 (en) 2015-08-26 2017-12-05 Industrial Technology Research Institute Surface measuring device and method thereof
JP6649073B2 (ja) * 2015-12-16 2020-02-19 株式会社荏原製作所 基板処理装置およびその品質保証方法
US9875167B1 (en) 2017-03-29 2018-01-23 Google Inc. Distributed hardware tracing
US10365987B2 (en) 2017-03-29 2019-07-30 Google Llc Synchronous hardware event collection
JP6971664B2 (ja) * 2017-07-05 2021-11-24 株式会社荏原製作所 基板研磨装置及び方法
JP7169769B2 (ja) * 2017-08-10 2022-11-11 東京エレクトロン株式会社 基板裏面研磨部材のドレッシング装置及びドレッシング方法
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
US10792783B2 (en) 2017-11-27 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. System, control method and apparatus for chemical mechanical polishing
KR102561647B1 (ko) * 2018-05-28 2023-07-31 삼성전자주식회사 컨디셔너 및 이를 포함하는 화학 기계적 연마 장치
US20200130136A1 (en) * 2018-10-29 2020-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method
JP7209344B2 (ja) * 2019-02-01 2023-01-20 スピードファム株式会社 両面研磨機用のドレッシング装置
JP7378944B2 (ja) * 2019-03-12 2023-11-14 株式会社東京精密 研削装置
CN112476243A (zh) * 2020-11-26 2021-03-12 华虹半导体(无锡)有限公司 化学机械研磨装置及化学机械研磨工艺研磨垫清洗装置
KR102482687B1 (ko) 2020-12-24 2022-12-28 동명대학교산학협력단 스윙 암과 통합된 패드 프로파일 측정 시스템
CN115972061A (zh) * 2022-12-15 2023-04-18 西安奕斯伟材料科技有限公司 抛光设备及抛光垫检测方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11170155A (ja) * 1997-12-09 1999-06-29 Hitachi Ltd 研磨装置
JPH11254294A (ja) * 1998-03-13 1999-09-21 Speedfam Co Ltd 定盤修正用ドレッサーの洗浄装置
JPH11277405A (ja) * 1998-03-31 1999-10-12 Nkk Corp Ｃｍｐ装置の研磨パッド調整装置
JP2001088008A (ja) * 1999-09-16 2001-04-03 Toshiba Corp 研磨方法とその装置
JP2002280337A (ja) * 2001-03-16 2002-09-27 Ebara Corp 基板保持装置、ドレッサ、及びポリッシング装置
JP2004025413A (ja) * 2002-06-28 2004-01-29 Nikon Corp 研磨パッド等の寿命・良否判定方法、研磨パッドのコンディショニング方法、研磨装置、半導体デバイス及び半導体デバイス製造方法
JP2004047876A (ja) * 2002-07-15 2004-02-12 Tokyo Seimitsu Co Ltd 研磨装置及び研磨方法
JP2006093296A (ja) * 2004-09-22 2006-04-06 Matsushita Electric Ind Co Ltd 半導体製造装置および半導体装置の製造方法
JP2006255851A (ja) * 2005-03-18 2006-09-28 Ebara Corp 研磨装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2896657B2 (ja) * 1996-06-28 1999-05-31 旭ダイヤモンド工業株式会社 ドレッサ及びその製造方法
JPH1044024A (ja) * 1996-07-26 1998-02-17 Nippon Steel Corp 研磨布の目立て装置
JP4440237B2 (ja) * 1999-05-17 2010-03-24 株式会社荏原製作所 ドレッシング装置
JP2000343407A (ja) * 1999-06-08 2000-12-12 Ebara Corp ドレッシング装置
JP2001079752A (ja) * 1999-09-08 2001-03-27 Hitachi Ltd 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法
JP2001260001A (ja) * 2000-03-13 2001-09-25 Hitachi Ltd 半導体装置の平坦化方法及びその装置
JP4349752B2 (ja) * 2000-10-24 2009-10-21 株式会社荏原製作所 ポリッシング方法
KR20020044737A (ko) * 2000-12-06 2002-06-19 윤종용 컨디셔닝 클리너를 포함하는 씨엠피 설비
US6896583B2 (en) * 2001-02-06 2005-05-24 Agere Systems, Inc. Method and apparatus for conditioning a polishing pad
TWI368555B (en) * 2004-11-01 2012-07-21 Ebara Corp Polishing apparatus

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11170155A (ja) * 1997-12-09 1999-06-29 Hitachi Ltd 研磨装置
JPH11254294A (ja) * 1998-03-13 1999-09-21 Speedfam Co Ltd 定盤修正用ドレッサーの洗浄装置
JPH11277405A (ja) * 1998-03-31 1999-10-12 Nkk Corp Ｃｍｐ装置の研磨パッド調整装置
JP2001088008A (ja) * 1999-09-16 2001-04-03 Toshiba Corp 研磨方法とその装置
JP2002280337A (ja) * 2001-03-16 2002-09-27 Ebara Corp 基板保持装置、ドレッサ、及びポリッシング装置
JP2004025413A (ja) * 2002-06-28 2004-01-29 Nikon Corp 研磨パッド等の寿命・良否判定方法、研磨パッドのコンディショニング方法、研磨装置、半導体デバイス及び半導体デバイス製造方法
JP2004047876A (ja) * 2002-07-15 2004-02-12 Tokyo Seimitsu Co Ltd 研磨装置及び研磨方法
JP2006093296A (ja) * 2004-09-22 2006-04-06 Matsushita Electric Ind Co Ltd 半導体製造装置および半導体装置の製造方法
JP2006255851A (ja) * 2005-03-18 2006-09-28 Ebara Corp 研磨装置

Also Published As

Publication number Publication date
JP5325831B2 (ja) 2013-10-23
TWI565561B (zh) 2017-01-11
KR101059935B1 (ko) 2011-08-26
KR20090055494A (ko) 2009-06-02
TW200936316A (en) 2009-09-01
JP2010162688A (ja) 2010-07-29
TW201700216A (zh) 2017-01-01
JP5530002B2 (ja) 2014-06-25
TWI458589B (zh) 2014-11-01
TWI572447B (zh) 2017-03-01
KR101005043B1 (ko) 2010-12-30
KR20100120625A (ko) 2010-11-16
JP2009148877A (ja) 2009-07-09
JP2013163262A (ja) 2013-08-22
TW201438845A (zh) 2014-10-16

Similar Documents

Publication Publication Date Title
JP4658182B2 (ja) 研磨パッドのプロファイル測定方法
US8870625B2 (en) Method and apparatus for dressing polishing pad, profile measuring method, substrate polishing apparatus, and substrate polishing method
US6517414B1 (en) Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US5975994A (en) Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
US7163439B2 (en) Methods and systems for conditioning planarizing pads used in planarizing substrates
JP5511600B2 (ja) 研磨装置
US7070478B2 (en) Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US6702646B1 (en) Method and apparatus for monitoring polishing plate condition
JP3772946B2 (ja) ドレッシング装置及び該ドレッシング装置を備えたポリッシング装置
CN112706002B (zh) 研磨方法及研磨装置
WO2001058644A1 (en) Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
JP2000061838A (ja) ドレッシング装置および方法
JPH1177520A (ja) 研磨方法及び研磨装置
JP2001239457A (ja) ポリッシング装置
US20040144160A1 (en) Pad conditioning head offline testing kit

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20091030

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091030

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100302

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100506

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101130

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101222

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140107

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4658182

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250