KR101005043B1 - 프로파일측정방법 - Google Patents
프로파일측정방법 Download PDFInfo
- Publication number
- KR101005043B1 KR101005043B1 KR1020080118622A KR20080118622A KR101005043B1 KR 101005043 B1 KR101005043 B1 KR 101005043B1 KR 1020080118622 A KR1020080118622 A KR 1020080118622A KR 20080118622 A KR20080118622 A KR 20080118622A KR 101005043 B1 KR101005043 B1 KR 101005043B1
- Authority
- KR
- South Korea
- Prior art keywords
- dresser
- polishing pad
- polishing
- dressing
- profile
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000005498 polishing Methods 0.000 claims abstract description 353
- 230000008569 process Effects 0.000 claims abstract description 32
- 238000005259 measurement Methods 0.000 claims description 15
- 238000000691 measurement method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 83
- 238000005520 cutting process Methods 0.000 description 56
- 238000003825 pressing Methods 0.000 description 24
- 239000012528 membrane Substances 0.000 description 20
- 238000004140 cleaning Methods 0.000 description 18
- 239000007788 liquid Substances 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000033001 locomotion Effects 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 15
- 230000008859 change Effects 0.000 description 14
- 230000002411 adverse Effects 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007307458 | 2007-11-28 | ||
JPJP-P-2007-307458 | 2007-11-28 | ||
JPJP-P-2008-288107 | 2008-11-10 | ||
JP2008288107A JP4658182B2 (ja) | 2007-11-28 | 2008-11-10 | 研磨パッドのプロファイル測定方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100093696A Division KR101059935B1 (ko) | 2007-11-28 | 2010-09-28 | 폴리싱패드의 드레싱방법과 장치, 기판폴리싱장치, 및 기판폴리싱방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090055494A KR20090055494A (ko) | 2009-06-02 |
KR101005043B1 true KR101005043B1 (ko) | 2010-12-30 |
Family
ID=40918660
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080118622A KR101005043B1 (ko) | 2007-11-28 | 2008-11-27 | 프로파일측정방법 |
KR1020100093696A KR101059935B1 (ko) | 2007-11-28 | 2010-09-28 | 폴리싱패드의 드레싱방법과 장치, 기판폴리싱장치, 및 기판폴리싱방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100093696A KR101059935B1 (ko) | 2007-11-28 | 2010-09-28 | 폴리싱패드의 드레싱방법과 장치, 기판폴리싱장치, 및 기판폴리싱방법 |
Country Status (3)
Country | Link |
---|---|
JP (3) | JP4658182B2 (zh) |
KR (2) | KR101005043B1 (zh) |
TW (3) | TWI565561B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220091841A (ko) | 2020-12-24 | 2022-07-01 | 동명대학교산학협력단 | 스윙 암과 통합된 패드 프로파일 측정 시스템 |
Families Citing this family (32)
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JP5263099B2 (ja) * | 2009-09-14 | 2013-08-14 | トヨタ自動車株式会社 | 研磨ブラシの成形方法及び装置 |
TWI492288B (zh) * | 2010-02-11 | 2015-07-11 | 聯華電子股份有限公司 | 控制晶圓研磨製程之方法 |
JP5511600B2 (ja) | 2010-09-09 | 2014-06-04 | 株式会社荏原製作所 | 研磨装置 |
US8758085B2 (en) * | 2010-10-21 | 2014-06-24 | Applied Materials, Inc. | Method for compensation of variability in chemical mechanical polishing consumables |
JP5896625B2 (ja) * | 2011-06-02 | 2016-03-30 | 株式会社荏原製作所 | 研磨装置に使用される研磨パッドの研磨面を監視する方法および装置 |
JP6193623B2 (ja) * | 2012-06-13 | 2017-09-06 | 株式会社荏原製作所 | 研磨方法及び研磨装置 |
US9067295B2 (en) * | 2012-07-25 | 2015-06-30 | Applied Materials, Inc. | Monitoring retaining ring thickness and pressure control |
JP5927083B2 (ja) | 2012-08-28 | 2016-05-25 | 株式会社荏原製作所 | ドレッシングプロセスの監視方法および研磨装置 |
JP5964262B2 (ja) * | 2013-02-25 | 2016-08-03 | 株式会社荏原製作所 | 研磨装置に使用される研磨部材のプロファイル調整方法、および研磨装置 |
KR101415982B1 (ko) * | 2013-03-29 | 2014-07-08 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 컨디셔너 및 컨디셔닝 방법 |
KR101498507B1 (ko) * | 2013-06-05 | 2015-03-04 | 주식회사 브러쉬텍 | 반도체 웨이퍼 세척용 브러쉬 에이징 장치 |
KR101527769B1 (ko) * | 2013-10-24 | 2015-06-11 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 저압 컨디셔너 |
JP6263445B2 (ja) * | 2014-06-06 | 2018-01-17 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
JP6307428B2 (ja) * | 2014-12-26 | 2018-04-04 | 株式会社荏原製作所 | 研磨装置およびその制御方法 |
TWI574778B (zh) * | 2015-02-11 | 2017-03-21 | 國立勤益科技大學 | 硏磨拋光機 |
US9669514B2 (en) | 2015-05-29 | 2017-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd | System and method for polishing substrate |
US9970754B2 (en) | 2015-08-26 | 2018-05-15 | Industrial Technology Research Institute | Surface measurement device and method thereof |
US9835449B2 (en) | 2015-08-26 | 2017-12-05 | Industrial Technology Research Institute | Surface measuring device and method thereof |
JP6649073B2 (ja) * | 2015-12-16 | 2020-02-19 | 株式会社荏原製作所 | 基板処理装置およびその品質保証方法 |
US10365987B2 (en) | 2017-03-29 | 2019-07-30 | Google Llc | Synchronous hardware event collection |
US9875167B1 (en) * | 2017-03-29 | 2018-01-23 | Google Inc. | Distributed hardware tracing |
JP6971664B2 (ja) * | 2017-07-05 | 2021-11-24 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
JP7169769B2 (ja) * | 2017-08-10 | 2022-11-11 | 東京エレクトロン株式会社 | 基板裏面研磨部材のドレッシング装置及びドレッシング方法 |
US11504821B2 (en) | 2017-11-16 | 2022-11-22 | Applied Materials, Inc. | Predictive filter for polishing pad wear rate monitoring |
US10792783B2 (en) | 2017-11-27 | 2020-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | System, control method and apparatus for chemical mechanical polishing |
KR102561647B1 (ko) * | 2018-05-28 | 2023-07-31 | 삼성전자주식회사 | 컨디셔너 및 이를 포함하는 화학 기계적 연마 장치 |
US20200130136A1 (en) * | 2018-10-29 | 2020-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing apparatus and method |
JP7209344B2 (ja) * | 2019-02-01 | 2023-01-20 | スピードファム株式会社 | 両面研磨機用のドレッシング装置 |
JP7378944B2 (ja) * | 2019-03-12 | 2023-11-14 | 株式会社東京精密 | 研削装置 |
JP7308074B2 (ja) * | 2019-05-14 | 2023-07-13 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
CN112476243A (zh) * | 2020-11-26 | 2021-03-12 | 华虹半导体(无锡)有限公司 | 化学机械研磨装置及化学机械研磨工艺研磨垫清洗装置 |
CN115972061A (zh) * | 2022-12-15 | 2023-04-18 | 西安奕斯伟材料科技有限公司 | 抛光设备及抛光垫检测方法 |
Citations (1)
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JP2006093296A (ja) * | 2004-09-22 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 半導体製造装置および半導体装置の製造方法 |
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JP2896657B2 (ja) * | 1996-06-28 | 1999-05-31 | 旭ダイヤモンド工業株式会社 | ドレッサ及びその製造方法 |
JPH1044024A (ja) * | 1996-07-26 | 1998-02-17 | Nippon Steel Corp | 研磨布の目立て装置 |
JPH11170155A (ja) * | 1997-12-09 | 1999-06-29 | Hitachi Ltd | 研磨装置 |
JPH11254294A (ja) * | 1998-03-13 | 1999-09-21 | Speedfam Co Ltd | 定盤修正用ドレッサーの洗浄装置 |
JPH11277405A (ja) * | 1998-03-31 | 1999-10-12 | Nkk Corp | Cmp装置の研磨パッド調整装置 |
JP4440237B2 (ja) * | 1999-05-17 | 2010-03-24 | 株式会社荏原製作所 | ドレッシング装置 |
JP2000343407A (ja) * | 1999-06-08 | 2000-12-12 | Ebara Corp | ドレッシング装置 |
JP2001079752A (ja) * | 1999-09-08 | 2001-03-27 | Hitachi Ltd | 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法 |
JP2001088008A (ja) * | 1999-09-16 | 2001-04-03 | Toshiba Corp | 研磨方法とその装置 |
JP2001260001A (ja) * | 2000-03-13 | 2001-09-25 | Hitachi Ltd | 半導体装置の平坦化方法及びその装置 |
JP4349752B2 (ja) * | 2000-10-24 | 2009-10-21 | 株式会社荏原製作所 | ポリッシング方法 |
KR20020044737A (ko) * | 2000-12-06 | 2002-06-19 | 윤종용 | 컨디셔닝 클리너를 포함하는 씨엠피 설비 |
US6896583B2 (en) * | 2001-02-06 | 2005-05-24 | Agere Systems, Inc. | Method and apparatus for conditioning a polishing pad |
JP3922887B2 (ja) * | 2001-03-16 | 2007-05-30 | 株式会社荏原製作所 | ドレッサ及びポリッシング装置 |
JP4259048B2 (ja) * | 2002-06-28 | 2009-04-30 | 株式会社ニコン | コンディショナの寿命判定方法及びこれを用いたコンディショナの判定方法、研磨装置、並びに半導体デバイス製造方法 |
JP2004047876A (ja) * | 2002-07-15 | 2004-02-12 | Tokyo Seimitsu Co Ltd | 研磨装置及び研磨方法 |
JP4817687B2 (ja) * | 2005-03-18 | 2011-11-16 | 株式会社荏原製作所 | 研磨装置 |
CN101934491B (zh) * | 2004-11-01 | 2012-07-25 | 株式会社荏原制作所 | 抛光设备 |
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2008
- 2008-11-10 JP JP2008288107A patent/JP4658182B2/ja active Active
- 2008-11-27 TW TW103122476A patent/TWI565561B/zh active
- 2008-11-27 TW TW097145887A patent/TWI458589B/zh active
- 2008-11-27 KR KR1020080118622A patent/KR101005043B1/ko active IP Right Grant
- 2008-11-27 TW TW105130310A patent/TWI572447B/zh active
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2010
- 2010-05-06 JP JP2010106770A patent/JP5325831B2/ja active Active
- 2010-09-28 KR KR1020100093696A patent/KR101059935B1/ko active IP Right Grant
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2013
- 2013-05-24 JP JP2013109883A patent/JP5530002B2/ja active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006093296A (ja) * | 2004-09-22 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 半導体製造装置および半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220091841A (ko) | 2020-12-24 | 2022-07-01 | 동명대학교산학협력단 | 스윙 암과 통합된 패드 프로파일 측정 시스템 |
Also Published As
Publication number | Publication date |
---|---|
KR101059935B1 (ko) | 2011-08-26 |
JP2010162688A (ja) | 2010-07-29 |
TWI458589B (zh) | 2014-11-01 |
JP4658182B2 (ja) | 2011-03-23 |
JP5325831B2 (ja) | 2013-10-23 |
KR20090055494A (ko) | 2009-06-02 |
KR20100120625A (ko) | 2010-11-16 |
JP2013163262A (ja) | 2013-08-22 |
TWI572447B (zh) | 2017-03-01 |
TWI565561B (zh) | 2017-01-11 |
TW201700216A (zh) | 2017-01-01 |
TW201438845A (zh) | 2014-10-16 |
JP2009148877A (ja) | 2009-07-09 |
JP5530002B2 (ja) | 2014-06-25 |
TW200936316A (en) | 2009-09-01 |
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