JP4658182B2 - Polishing pad profile measurement method - Google Patents

Polishing pad profile measurement method Download PDF

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JP4658182B2
JP4658182B2 JP2008288107A JP2008288107A JP4658182B2 JP 4658182 B2 JP4658182 B2 JP 4658182B2 JP 2008288107 A JP2008288107 A JP 2008288107A JP 2008288107 A JP2008288107 A JP 2008288107A JP 4658182 B2 JP4658182 B2 JP 4658182B2
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polishing pad
dresser
polishing
dressing
profile
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JP2009148877A (en
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計介 並木
暁 山木
哲二 戸川
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Ebara Corp
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Ebara Corp
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Priority to JP2008288107A priority Critical patent/JP4658182B2/en
Priority to US12/292,685 priority patent/US8870625B2/en
Priority to TW097145887A priority patent/TWI458589B/en
Priority to TW105130310A priority patent/TWI572447B/en
Priority to KR1020080118622A priority patent/KR101005043B1/en
Priority to TW103122476A priority patent/TWI565561B/en
Publication of JP2009148877A publication Critical patent/JP2009148877A/en
Priority to KR1020100093696A priority patent/KR101059935B1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Description

本発明は、研磨テーブル上の研磨パッドにジレッサーを当接させドレッシングし、該研磨パッドのプロファイル（表面形状）測定する研磨パッドのプロファイル測定方法に関するものである。 The present invention relates to a polishing pad profile measurement method for performing dressing by bringing a dresser into contact with a polishing pad on a polishing table and measuring the profile (surface shape) of the polishing pad .

近年、半導体デバイスの高集積化が進むにつれて回路の配線が微細化し、配線間距離もより狭くなりつつある。特に線幅が０．５μｍ以下の光リソグラフィの場合、焦点深度が浅くなるためステッパーの結像面の高い平坦度を必要とする。このような半導体ウエハの表面を平坦化する１手段として、化学機械的研磨（ＣＭＰ）を行う研磨装置が知られている。   In recent years, as semiconductor devices are highly integrated, circuit wiring is becoming finer and the distance between wirings is becoming narrower. In particular, in the case of photolithography having a line width of 0.5 μm or less, the depth of focus becomes shallow, so that a high flatness of the image plane of the stepper is required. As a means for flattening the surface of such a semiconductor wafer, a polishing apparatus that performs chemical mechanical polishing (CMP) is known.

従来、この種の研磨装置は、図１に示すように、上面研磨パッド（研磨布）１００を貼付して研磨面を構成する研磨テーブル１０２と、研磨対象物である半導体ウエハ等の基板Ｗを保持するトップリング１０４を備えている。回転するトップリング１０４で保持する基板Ｗの被研磨面を回転する研磨テーブル１０２に向けて一定の圧力で押し付け、更にノズル１０６から砥液を供給しつつ基板Ｗの被研磨面を平坦且つ鏡面に研磨している。研磨液は、例えばアルカリ溶液にシリカ等の微粒子からなる砥粒を懸濁したものを用い、アルカリによる化学的研磨作用と、砥粒による機械的研磨作用との複合作用である科学的・機械的研磨によって基板Ｗを研磨する。   Conventionally, as shown in FIG. 1, this type of polishing apparatus includes a polishing table 102 that forms a polishing surface by attaching an upper surface polishing pad (polishing cloth) 100 and a substrate W such as a semiconductor wafer that is an object to be polished. A top ring 104 for holding is provided. The surface to be polished of the substrate W held by the rotating top ring 104 is pressed against the rotating polishing table 102 with a constant pressure, and the polishing surface of the substrate W is made flat and mirror surface while supplying abrasive liquid from the nozzle 106. Polishing. The polishing liquid is, for example, a solution obtained by suspending abrasive grains made of fine particles such as silica in an alkaline solution, which is a chemical / mechanical action that is a combination of chemical polishing action by alkali and mechanical polishing action by abrasive grains. The substrate W is polished by polishing.

研磨を行って劣化した研磨パッド１００の表面を再生するために、研磨テーブル１０２の側方にドレッサー１０８を備えたドレッシング装置を付設し、回転するドレッサー１０８のドレッシング面を回転する研磨テーブル１０２の研磨面に押付け、研磨面に付着した砥液や切削屑を除去すると共に、研磨面の平坦化及び目立て（ドレッシング）を行う。この研磨面を削って平坦化するドレッサー１０８としては、主にダイヤモンドドレッサーが用いられている。ここで、ドレッシング後の研磨面の均一性は、その後の基板Ｗの研磨精度に大きく影響する。
特開２００６−２７２５４９号公報 In order to regenerate the surface of the polishing pad 100 deteriorated by polishing, a dressing device having a dresser 108 is attached to the side of the polishing table 102 and the polishing of the polishing table 102 rotating the dressing surface of the rotating dresser 108 is performed. While pressing against the surface, the abrasive fluid and cutting chips adhering to the polished surface are removed, and the polished surface is flattened and dressed. A diamond dresser is mainly used as the dresser 108 for polishing and flattening the polished surface. Here, the uniformity of the polished surface after dressing greatly affects the subsequent polishing accuracy of the substrate W.
JP 2006-272549 A

ドレッシング装置のドレッサー１０８の交換時に、ドレッサーの固体差によって研磨パッドのパッドカットレートが変化し、研磨レート及び研磨プロファイルが変化するという問題がある。また、従来はドレッシング装置のドレッサー１０８の交換時、該ドレッサー１０８を研磨パッド１００に所定の圧力で押し当て、ドレッサーの慣らし運転を行っている。この方法だと基板Ｗの研磨初期に研磨性能に悪影響を与えるという問題がある。また、ドレッサーにドレッシング時のスラリーが固着堆積し、研磨性能の安定性に悪影響を及ぼすという問題もある。   When the dresser 108 of the dressing apparatus is replaced, there is a problem that the pad cut rate of the polishing pad changes due to the difference in the dresser solids, and the polishing rate and the polishing profile change. Further, conventionally, when the dresser 108 of the dressing apparatus is replaced, the dresser 108 is pressed against the polishing pad 100 with a predetermined pressure to perform the running-in operation of the dresser. With this method, there is a problem that the polishing performance is adversely affected in the initial stage of polishing of the substrate W. There is also a problem in that the slurry during dressing adheres and accumulates on the dresser, which adversely affects the stability of the polishing performance.

本発明は上述の点に鑑みてなされたもので、ドレッサーにより研磨パッドをドレッシングし、該研磨パッドのプロファイル（表面形状）を適正に測定することできる研磨パッドのプロファイル測定方法を提供することを目的とする。 The present invention has been made in view of the above, aims to provide Hisage the profile measuring method of a polishing pad can be dressed the polishing pad by the dresser, properly measure the polishing pad profile (surface configuration) And

上記課題を解決するため本発明は、研磨テーブル上の研磨パッドにドレッサーを当接させ所定のドレッシング条件で研磨パッドをドレッシングし、該ドレッシングした研磨パッドのプロファイルを測定する研磨パッドのプロファイル測定方法であって、ドレッサーは研磨パッド上面を半径方向に揺動しながら複数回の揺動運動によるドレッシングで１工程のドレッシングを行うようになっており、研磨パッドを半径方向に複数のゾーンに分け、ドレッサーの１回の揺動運動によるドレッシングで複数ゾーン内の１つのゾーンの所定点の研磨パッド面の高さを測定し、ドレッサーの次回の揺動運動によるドレッシングで異なるゾーンの所定点の磨パッド面の高さを測定するように、順次ドレッサーの揺動運動によるドレッシングで前回と異なるゾーンの所定点の研磨パッド面の高さを測定し、１工程のドレッシングの複数の揺動運動によるドレッシングを経て全てのゾーンの所定点の研磨パッド面の高さを測定し、該測定結果から研磨パッドのプロファイルを得ることを特徴とする。 In order to solve the above-mentioned problems, the present invention is a polishing pad profile measuring method in which a dresser is brought into contact with a polishing pad on a polishing table, the polishing pad is dressed under predetermined dressing conditions, and the profile of the dressed polishing pad is measured . there, the dresser divided into polishing pad upper surface while swinging in the radial direction being adapted to perform the dressings of one step in the dressing by multiple oscillating movement, a plurality of polishing pads radially zone, Measure the height of the polishing pad surface at a predetermined point in one zone in multiple zones by dressing by one rocking motion of the dresser, and polish the predetermined points in different zones by dressing by the next rocking motion of the dresser. The dressing by the swinging motion of the dresser is sequentially different from the previous time so as to measure the height of the pad surface. The height of the polishing pad surface at a predetermined point of the zone is measured, and the height of the polishing pad surface at a predetermined point in all zones is measured through dressing by a plurality of swinging motions in one step dressing, and the measurement result A polishing pad profile is obtained from

上記のようにドレッサーの１回の揺動運動によるドレッシングで複数ゾーン内の１つのゾーンの所定点の研磨パッド面の高さを測定し、ドレッサーの次回の揺動運動によるドレッシングで異なるゾーンの所定点の研磨パッド面の高さを測定するように、順次ドレッサーの揺動運動によるドレッシングで前回と異なるゾーンの所定点の研磨パッド面の高さを測定し、１工程のドレッシングの複数の揺動運動によるドレッシングを経て全てのゾーンの所定点の研磨パッド面の高さを測定し、該測定結果から研磨パッドのプロファイルを得るので、データ処理速度の速い高価なデータ処理装置を用いることなく、研磨パッドの研磨プロファイルを測定することが可能となる。 The height of the polishing pad surface of a predetermined point of a zone within multiple zones dressing by a single oscillating movement of the dresser as described above was measured, the different zones in the dressing by the next swing motion of the dresser In order to measure the height of the polishing pad surface at a predetermined point, the height of the polishing pad surface at a predetermined point in a zone different from the previous time is measured by dressing by swinging movement of the dresser sequentially, and a plurality of fluctuations of dressing in one process By measuring the height of the polishing pad surface at a predetermined point in all zones through dressing by dynamic motion, and obtaining the polishing pad profile from the measurement result , without using an expensive data processing device with a high data processing speed, It becomes possible to measure the polishing profile of the polishing pad.

また、本発明は、上記研磨パッドのプロファイル測定方法において、複数工程のドレッシング工程を経て各ゾーンの所定点の研磨パッド面の高さを複数回測定し、その平均値を当該所定点の研磨パッドの高さとし、研磨パッドのプロファイルを得ることを特徴とする。 Further, the present invention provides the above polishing pad profile measuring method, wherein the height of the polishing pad surface at a predetermined point in each zone is measured a plurality of times through a plurality of dressing steps, and the average value thereof is determined as the polishing pad at the predetermined point. And a polishing pad profile is obtained .

上記のように各ゾーンの所定点の研磨パッド面の高さを複数回測定し、その平均値を当該所定点の研磨パッドの高さとするので、より精度の良い研磨パッドのプロファイルを得ることができる。 The height of the polishing pad surface of a predetermined point of each zone as described above was measured a plurality of times, since the average value and the height of the polishing pad of the predetermined points, to obtain a higher profile of accurate polishing pad it can.

また、本発明は、上記研磨パッドのプロファイル測定方法において、研磨テーブルの内部に設けられた渦電流センサにより、ドレッサーの金属層に渦電流を誘導させて、該渦電流の大きさを測定し、研磨パッドの高さを測定することを特徴とする。 Further, the present invention is the above polishing pad profile measurement method, wherein the eddy current is induced in the metal layer of the dresser by the eddy current sensor provided inside the polishing table, and the magnitude of the eddy current is measured. The height of the polishing pad is measured.

また、本発明は、上記研磨パッドのプロファイル測定方法において、各ゾーンの所定点は、各ゾーンの中心位置であることを特徴とする。In the polishing pad profile measuring method according to the present invention, the predetermined point of each zone is a center position of each zone.

本発明によれば、ドレッサーの１回の揺動運動によるドレッシングで複数ゾーン内の１つのゾーンの所定点の研磨パッド面の高さを測定するようにし、１工程のドレッシングの複数の揺動運動によるドレッシングを経て全てのゾーンの所定点の研磨パッド面の高さを測定し、該測定結果から研磨パッドのプロファイルを得るので、データ処理速度の速い高価なデータ処理装置を用いることなく、研磨パッドの研磨プロファイルを測定することができる。 According to the present invention, the height of the polishing pad surface at a predetermined point in one zone in a plurality of zones is measured by dressing by one swinging motion of the dresser, and a plurality of swings of dressing in one step is performed. through the dressing by exercise measuring the height of the polishing pad surface of a predetermined point in all zones, so obtaining a profile of the polishing pad from the measurement results, without Rukoto using fast expensive data processing apparatus having data processing speed, The polishing profile of the polishing pad can be measured.

また、本発明によれば、各ゾーンの所定点の研磨パッド面の高さを複数回測定し、その平均値を当該所定点の研磨パッドの高さとするので、より精度の良い研磨パッドのプロファイルを得ることができる。 Further, according to the present invention, the height of the polishing pad surface at a predetermined point in each zone is measured a plurality of times, and the average value is set as the height of the polishing pad at the predetermined point. Can be obtained.

以下、本願発明の実施の形態例を図面に基づいて説明する。図２及び図３は本発明に係るドレッシング装置を備えた研磨装置の概略構成を示す図であり、図２は側断面、図３は平面図である。本研磨装置は研磨テーブル１と、半導体等の基板を保持し研磨テーブル１の上面に貼設されている研磨パッド４に向けて押圧するトップリング（図示せず）と、研磨パッド４の上面をドレッシングするドレッサー３を備えている。研磨テーブル１は、モータ７に連結されており、その軸心回りに矢印Ａに示すように回転する。   Embodiments of the present invention will be described below with reference to the drawings. 2 and 3 are diagrams showing a schematic configuration of a polishing apparatus provided with a dressing apparatus according to the present invention. FIG. 2 is a side sectional view and FIG. 3 is a plan view. The polishing apparatus includes a polishing table 1, a top ring (not shown) that holds a substrate such as a semiconductor and presses it toward a polishing pad 4 attached to the upper surface of the polishing table 1, and an upper surface of the polishing pad 4. A dresser 3 for dressing is provided. The polishing table 1 is connected to a motor 7 and rotates around its axis as indicated by an arrow A.

ドレッサー３はモータ１４に歯車等の動力伝達機構１５を介して連結されると共に、昇降シリンダ１６に連結されている。これによって、ドレッサー３は矢印Ｂに示すように昇降して、ドレッサー３を研磨パッド４に対して任意の圧力で押圧し、その軸心回りに矢印Ｃに示すように回転する。ドレッサー３はドレッサーシャフト８に連結されており、その下面の金属層９にダイヤモンド粒子（図示せず）が金属メッキ等により固着保持されている。研磨テーブル１の上方には、研磨テーブル１の上面に貼設された研磨パッド４上にドレッシング液（主に純水）を供給するドレッシング液供給ノズル５が配置されている。なお、モータ１４及び昇降シリンダ１６は図示しない駆動制御装置により、任意のドレッシング条件（ドレッサー３の研磨パッド４の押圧力、ドレッサー３の回転数等）でドレッサー３を駆動制御するようになっている。   The dresser 3 is connected to a motor 14 via a power transmission mechanism 15 such as a gear, and is also connected to a lifting cylinder 16. As a result, the dresser 3 moves up and down as indicated by an arrow B, presses the dresser 3 against the polishing pad 4 with an arbitrary pressure, and rotates around its axis as indicated by an arrow C. The dresser 3 is connected to a dresser shaft 8, and diamond particles (not shown) are fixedly held on the metal layer 9 on the lower surface thereof by metal plating or the like. Above the polishing table 1, a dressing solution supply nozzle 5 that supplies a dressing solution (mainly pure water) is disposed on a polishing pad 4 attached to the upper surface of the polishing table 1. The motor 14 and the lift cylinder 16 are driven and controlled by a drive control device (not shown) under any dressing conditions (pressing force of the polishing pad 4 of the dresser 3, rotation speed of the dresser 3, etc.). .

ドレッサー３は揺動軸（図示せず）の揺動中心Ｏを中心として旋回機構６により矢印Ｄに示すように揺動（旋回）するドレッサーアーム２を備えている。旋回機構６は歯車６−１、６−２で構成され、モータ２９で駆動されるようになっている。モータ２９としては、位置制御モータ又はパルスモータを使用することができ、例えばサーボモータやステッピングモータが使用できる。ドレッサー３の下面の金属層９に保持されたダイヤモンド粒子を研磨パッド４の上面に押圧すると共に、研磨テーブル１及びドレッサー３を回転させることにより、研磨パッド４とドレッサー３との相対運動により研磨パッド４の上面を削り、研磨パッド４の上面の目立てや修復を行う。また、ドレッサー３の研磨パッド４上面の半径方向の位置をモータ２９に供給されるパルス数で検出するドレッサー位置測定手段（図示せず）を備えている。なお、上記例では旋回機構６によりドレッサーアーム２を矢印Ｄに示すように研磨パッド４の半径方向に揺動（旋回）させているが、ドレッサー３を研磨パッド４の半径方向に移動できる移動機構であればよい。   The dresser 3 includes a dresser arm 2 that swings (turns) as indicated by an arrow D by a turning mechanism 6 around a swing center O of a swing shaft (not shown). The turning mechanism 6 includes gears 6-1 and 6-2 and is driven by a motor 29. As the motor 29, a position control motor or a pulse motor can be used. For example, a servo motor or a stepping motor can be used. The diamond pad held on the metal layer 9 on the lower surface of the dresser 3 is pressed against the upper surface of the polishing pad 4, and the polishing table 1 and the dresser 3 are rotated so that the polishing pad 4 and the dresser 3 move relative to each other. The upper surface of 4 is shaved, and the upper surface of the polishing pad 4 is sharpened and repaired. Further, dresser position measuring means (not shown) for detecting the radial position of the upper surface of the polishing pad 4 of the dresser 3 by the number of pulses supplied to the motor 29 is provided. In the above-described example, the dresser arm 2 is swung (turned) in the radial direction of the polishing pad 4 as shown by the arrow D in the turning mechanism 6. However, the moving mechanism that can move the dresser 3 in the radial direction of the polishing pad 4. If it is.

研磨テーブル１の内部には、センサコイルに高周波電流を流しドレッサー３の金属層９に渦電流を誘導させ、該渦電流の大きさから研磨パッド４の厚さを測定する渦電流センサ１０が埋め込まれている。研磨パッド４は、例えば発砲ウレタン等の誘電体材であるから、その厚さが厚ければドレッサー３の金属層９に誘導される渦電流が小さく、薄くなれば大きくなる。従って、金属層９に誘導される渦電流の大きさを測定することにより、研磨パッド４の厚さを測定できる。渦電流センサ１０の出力端に接続された配線１８は、研磨テーブル１及び研磨テーブル支持軸１ａ内を通り、研磨テーブル支持軸１ａの軸端に設けられたロータリコネクタ１１を経由してコントローラ１２に接続されている。コントローラ１２は表示装置１３に接続されている。これによって、渦電流式研磨パッド厚さ検知モニタが構成されている。ロータリコネクタ１１の代わりにスリップリングを用いることができる。なお、図２ではドレッサー３の金属層９に誘導される渦電量を渦電流センサ１０を研磨パッド４の下方の研磨テーブル１の１ヶ所に設けているが、例えば図９に示すように、研磨パッド４の上面を半径方向に複数のゾーンに区分し、各ゾーンの中心位置の研磨パッド４の下方に設け、各ゾーンの中心位置の研磨パッド４の厚さを測定するようにしてもよい。   An eddy current sensor 10 is embedded in the polishing table 1 to cause a high-frequency current to flow through the sensor coil to induce an eddy current in the metal layer 9 of the dresser 3 and to measure the thickness of the polishing pad 4 from the magnitude of the eddy current. It is. Since the polishing pad 4 is a dielectric material such as foamed urethane, for example, the eddy current induced in the metal layer 9 of the dresser 3 is small if the thickness is thick, and increases if the thickness is thin. Therefore, the thickness of the polishing pad 4 can be measured by measuring the magnitude of the eddy current induced in the metal layer 9. The wiring 18 connected to the output end of the eddy current sensor 10 passes through the polishing table 1 and the polishing table support shaft 1a and passes to the controller 12 via the rotary connector 11 provided at the shaft end of the polishing table support shaft 1a. It is connected. The controller 12 is connected to the display device 13. Thus, an eddy current type polishing pad thickness detection monitor is configured. A slip ring can be used instead of the rotary connector 11. In FIG. 2, the eddy current amount induced in the metal layer 9 of the dresser 3 is provided with the eddy current sensor 10 in one place on the polishing table 1 below the polishing pad 4. For example, as shown in FIG. The upper surface of the pad 4 may be divided into a plurality of zones in the radial direction, provided below the polishing pad 4 at the center position of each zone, and the thickness of the polishing pad 4 at the center position of each zone may be measured.

渦電流式研磨パッド厚さの検知モニタ１７によれば、研磨パッド４の厚さの変化をドレッサー３の金属層９に生じる渦電流を渦電流センサ１０で検出し、この渦電流センサ１０で検出した電流値を表示装置１３に表示し、研磨パッド４の厚さを検知できる。コントローラ１２は渦電流センサ１０からの信号により、研磨パッド４のカットレートを検出し、これを上記モータ１４や昇降シリンダ１６を駆動制御するドレッサー駆動制御装置にフィードバックし、ドレッシング条件（ドレッサー３の研磨パッド押圧力、ドレッサー３の研磨パッド上面の半径方向移動速度、ドレッサー３の回転速度等）に反映するようになっている。例えばここでは、昇降シリンダ１６によるドレッサー３の研磨パッド４を押圧する押圧力やモータ１４によるドレッサー３の回転数等に反映する。   According to the eddy current type polishing pad thickness detection monitor 17, an eddy current sensor 10 detects a change in the thickness of the polishing pad 4 in the metal layer 9 of the dresser 3, and the eddy current sensor 10 detects this change. The measured current value is displayed on the display device 13, and the thickness of the polishing pad 4 can be detected. The controller 12 detects the cut rate of the polishing pad 4 based on a signal from the eddy current sensor 10 and feeds it back to the dresser drive control device that controls the motor 14 and the lift cylinder 16 to perform dressing conditions (polishing of the dresser 3). This is reflected in the pad pressing force, the radial movement speed of the upper surface of the polishing pad of the dresser 3, the rotational speed of the dresser 3, and the like. For example, this is reflected in the pressing force pressing the polishing pad 4 of the dresser 3 by the elevating cylinder 16, the number of rotations of the dresser 3 by the motor 14, and the like.

上記例では、上記ドレッサー３による研磨パッド４のカットレートの測定を渦電流センサ１０で測定しているが、研磨パッド４のカットレートの測定は研磨テーブル１を駆動（回転）するモータ７のトルク電流値の変化、又はドレッサー３を駆動するモータ１４のトルク電流、ドレッサー３の研磨パッドの当接面の位置変化（これはドレッサー３の高さ位置の変化を測定することにより検知できる。又はこれらの組み合わせで行うことができる。また、ドレッサー３の研磨パッド上面の半径方向は、上記のようにモータ２９（位置制御モータ又はパルスモータ）に供給するパルス数で検知するようにしているが、ドレッサー３の研磨パッド上面の半径方向の位置を検知できるものであれば、どのような測定手段でもよい。   In the above example, the measurement of the cut rate of the polishing pad 4 by the dresser 3 is measured by the eddy current sensor 10, but the cut rate of the polishing pad 4 is measured by the torque of the motor 7 that drives (rotates) the polishing table 1. Changes in the current value, torque current of the motor 14 driving the dresser 3, position change of the contact surface of the polishing pad of the dresser 3 (this can be detected by measuring changes in the height position of the dresser 3 or these. Further, the radial direction of the upper surface of the polishing pad of the dresser 3 is detected by the number of pulses supplied to the motor 29 (position control motor or pulse motor) as described above. Any measuring means may be used as long as the position in the radial direction of the upper surface of the polishing pad 3 can be detected.

上記構成の研磨装置において、ドレッサー３の交換時に、ドレッサーの固体差により研磨パッド４の削れ度（パッドカットレート）が変化し、基板研磨レート及び研磨プロファイルが変化するという問題がある。また、従来はドレッサー３の交換時に研磨パッド４にてドレッサー３を慣らしているが、この方法だと研磨性能、特に基板の研磨初期に基板研磨に悪い影響を与えるという問題があった。そこでここでは図３に示すように、ドレッサー３の退避位置（研磨パッド４の上面外のドレッサー３の揺動範囲端部）にドレッサー３の交換時、該ドレッサー３の慣らし運転を行うドレッサー慣らし装置２０を設けている。   In the polishing apparatus having the above-described configuration, when the dresser 3 is replaced, there is a problem that the degree of abrasion (pad cut rate) of the polishing pad 4 changes due to the solid difference of the dresser, and the substrate polishing rate and the polishing profile change. Conventionally, the dresser 3 is accustomed to the polishing pad 4 when the dresser 3 is replaced. However, this method has a problem of adversely affecting the polishing performance, particularly the substrate polishing in the initial stage of the substrate polishing. Therefore, here, as shown in FIG. 3, when the dresser 3 is replaced at the retracted position of the dresser 3 (the end of the swinging range of the dresser 3 outside the upper surface of the polishing pad 4), the dresser running-in device that performs the running-in operation of the dresser 3 20 is provided.

ドレッサー慣らし装置２０は、図４に示すように、台部材２１の上面にドレッサー慣らし材２２を貼り付けた構成のドレッサー慣らし部２３を備えている。ドレッサー慣らし部２３はドレッサー慣らし部支持シャフト２７に支持され、昇降機構（図示せず）により矢印Ｅに示すように、昇降可能で、且つ矢印Ｆに示すように回転できるようになっている。ドレッサー慣らし材２２には、研磨パッド４と同質の、例えば発砲ポリウレタン材を用いる。ドレッサー慣らし材２２には多数の洗浄液噴射孔２４が設けられており、台部材２１内に設けられた洗浄液供給路（図示せず）から洗浄液が供給され、各洗浄液噴射孔２４から噴射されるようになっている。また、ドレッサー慣らし材２２の中心部を通る径方向にはナイロンブラシ等のブラシ部材２５が配置できるようになっている。なお、図４（ａ）はドレッサー慣らし装置２０の側面図、図４（ｂ）はドレッサー慣らし装置２０の平面図である。   As shown in FIG. 4, the dresser break-in device 20 includes a dresser break-in portion 23 having a configuration in which a dresser break-in member 22 is attached to the upper surface of the base member 21. The dresser running-in portion 23 is supported by a dresser running-in portion support shaft 27, can be moved up and down as indicated by an arrow E by an elevating mechanism (not shown), and can be rotated as indicated by an arrow F. For the dresser break-in material 22, for example, a foamed polyurethane material having the same quality as the polishing pad 4 is used. The dresser break-in material 22 is provided with a large number of cleaning liquid injection holes 24 so that the cleaning liquid is supplied from a cleaning liquid supply path (not shown) provided in the base member 21 and is injected from each cleaning liquid injection hole 24. It has become. Further, a brush member 25 such as a nylon brush can be arranged in the radial direction passing through the center portion of the dresser break-in material 22. 4A is a side view of the dresser break-in device 20, and FIG. 4B is a plan view of the dresser break-in device 20. FIG.

ドレッサー慣らし部２３は図５に示すように、常時は洗浄液収容槽２６の洗浄液Ｑ内に浸漬され、湿潤状態になっている。なお、図５において、２８は洗浄液収容槽２６内の洗浄液Ｑの漏出を防止するシール機構である。ドレッサー３の交換時、図６に示すように、ドレッサー慣らし装置２０のドレッサー慣らし部２３の真上の所定位置に退避しているドレッサー３に向けて、ドレッサー慣らし部２３を上昇させ、ドレッサー３の下面に所定の圧力で押し付ける。そしてドレッサー慣らし部２３を矢印Ｆに示すように回転させると共に、ドレッサー３を矢印Ｃに示すように回転し、ドレッサー３とドレッサー慣らし部２３の相対的運動により、ドレッサー慣らし材２２の上面を削り取りながら、ドレッサー３の慣らし行う。このときドレッサー慣らし部２３の押圧圧力や、回転数はコントローラ（図示せず）によりコントロールされようになっている。なお、ここではドレッサー３とドレッサー慣らし部２３の双方を回転させているが、ドレッサー慣らし部２３を静止状態にしてもよい。   As shown in FIG. 5, the dresser break-in portion 23 is always immersed in the cleaning liquid Q in the cleaning liquid storage tank 26 and is in a wet state. In FIG. 5, reference numeral 28 denotes a sealing mechanism that prevents leakage of the cleaning liquid Q in the cleaning liquid storage tank 26. When the dresser 3 is replaced, as shown in FIG. 6, the dresser running-in portion 23 is raised toward the dresser 3 evacuated to a predetermined position directly above the dresser running-in portion 23 of the dresser running-in device 20. Press against the lower surface with a certain pressure. Then, the dresser running-in portion 23 is rotated as indicated by an arrow F, and the dresser 3 is rotated as indicated by an arrow C. , Doing-in of the dresser 3 is performed. At this time, the pressing pressure and the rotational speed of the dresser break-in portion 23 are controlled by a controller (not shown). Here, both the dresser 3 and the dresser running-in portion 23 are rotated, but the dresser running-in portion 23 may be stationary.

上記ドレッサー慣らし装置２０において、ドレッサー慣らし部２３の台部材２１内には、図示は省略するが、図２の渦電流センサ１０と同じような渦電流センサが設けられており、該渦電流センサによりドレッサー慣らし材２２の厚さ変化を測定し、該ドレッサー慣らし材２２のカットレートを測定する。この測定したカッレートとドレッサー３の正常時のカットレートを比較し、正常であったらドレッサー慣らし運転の終点として慣らし運転を終了し、正常でなかった場合はドレッサー慣らし部２３によるドレッサー３の慣らしを継続して行い、ドレッサー３のパッドカットレートを調整する。ドレッサー３の研磨パッド４のカットレートは、ダイヤモンド粒子の角の磨耗に応じて、基本的に新品使用開始から最後まで減少傾向にあるが、経験上、新品で卸したては研磨パッド４のカットレートの減少速度が速く、あるところでカットレート減少速度の傾きが緩やかになる。その勾配が緩やかになったところでドレッサー慣らし運転の終点とする。   In the dresser running-in device 20, an eddy current sensor similar to the eddy current sensor 10 in FIG. 2 is provided in the base member 21 of the dresser running-in portion 23, and the eddy current sensor The thickness change of the dresser break-in material 22 is measured, and the cut rate of the dresser break-in material 22 is measured. The measured cut rate is compared with the normal cut rate of the dresser 3, and if it is normal, the break-in operation is terminated as the end point of the dresser break-in operation. To adjust the pad cut rate of the dresser 3. The cutting rate of the polishing pad 4 of the dresser 3 is basically decreasing from the start of use of a new product to the end depending on the wear of the corners of the diamond particles. The rate of decrease of the rate is fast, and the slope of the rate of decrease of the cut rate becomes gentle at a certain point. When the slope becomes gentle, the end point of the dresser break-in operation is set.

なお、ドレッサー慣らし材２２のカットレートを測定する方法としては、ドレッサー３を駆動するモータ（図示せず）のトルク電流、又はドレッサー慣らし部２３を駆動するモータのトルク電流、或いはこれらの組み合わせからも測定できる。また、ドレッシング中のドレッサー３の高さ位置を測定するドレッサー高さ位置センサ（図示せず）を設け、このドレッサー高さ位置センサの出力からドレッサー慣らし材２２のカットレートを測定するようにしてもよい。   As a method of measuring the cut rate of the dresser break-in material 22, the torque current of a motor (not shown) that drives the dresser 3, the torque current of the motor that drives the dresser break-in portion 23, or a combination thereof can also be used. It can be measured. Further, a dresser height position sensor (not shown) for measuring the height position of the dresser 3 during dressing is provided, and the cut rate of the dresser break-in material 22 is measured from the output of the dresser height position sensor. Good.

上記ドレッサー３の慣らし運転が終了したら、図７に示すように、ドレッサー３の下面とドレッサー慣らし材２２の上面の間に所定の隙間を設け、ドレッサー３のダイヤモンド粒子を固着保持する金属層９の下面にドレッサー洗浄ブラシ２５を当接すると共に、ドレッサー慣らし部２３のドレッサー慣らし材２２の洗浄液噴射孔２４から洗浄液（純水、薬液、これら純水や薬液とＮ2との混合体）ｑを噴射し、金属層９の下面を洗浄する。これにより、ドレッサー３の金属層９の下面に付着しているスラリー等の付着物を除去できる。 When the running-in operation of the dresser 3 is finished, as shown in FIG. 7, a predetermined gap is provided between the lower surface of the dresser 3 and the upper surface of the dresser running-in material 22, and the metal layer 9 that holds and holds the diamond particles of the dresser 3 is formed. The dresser cleaning brush 25 is brought into contact with the lower surface, and a cleaning liquid (pure water, chemical liquid, a mixture of pure water, chemical liquid, and N 2 ) q is sprayed from the cleaning liquid injection hole 24 of the dresser running-in material 22 of the dresser running-in portion 23. The lower surface of the metal layer 9 is cleaned. Thereby, deposits, such as a slurry adhering to the lower surface of the metal layer 9 of the dresser 3, can be removed.

上記慣らしが終了し、洗浄の終了したドレッサー３は、図８に示すように研磨装置が基板を研磨中の間は、ドレッサー３の金属層９の下面を洗浄液収容槽２６内の洗浄液Ｑに浸漬させると共に、ドレッサー洗浄ブラシ２５を当接させ、金属層９の下面を湿潤状態にしながら、ドレッサー３を回転させながら洗浄し、待機する。これにより、ドレッサー３の下面は湿潤状態で且つ清浄な状態に維持される。   The dresser 3 which has been conditioned and has been cleaned is immersed in the cleaning liquid Q in the cleaning liquid storage tank 26 while the lower surface of the metal layer 9 of the dresser 3 is being polished while the polishing apparatus is polishing the substrate as shown in FIG. Then, the dresser cleaning brush 25 is brought into contact therewith, while the lower surface of the metal layer 9 is kept in a wet state, the dresser 3 is cleaned while rotating, and is put on standby. Thereby, the lower surface of the dresser 3 is maintained in a wet state and a clean state.

研磨装置の研磨パッド４のドレッシングに長時間使用したドレッサー３は、パッドカットレートが低下し、該パッドカットレートが所定以下となれば、ドレッサー３が寿命に達したとして、ドレッサー３の交換を行う。ドレッサー慣らし装置はこのドレッサー寿命の判定にも利用できる。ドレッサー慣らし装置２０にドレッサー慣らし材２２のカットレートからドレッサー寿命を判定するドレッサー寿命判定手段を設け、研磨パッド４のドレッシングに使用したドレッサー３でドレッサー慣らし材２２をドレッシングし、そのカットレートを測定し、この測定したカットレートからドレッサー３の寿命を判定する。   The dresser 3 used for a long time for dressing the polishing pad 4 of the polishing apparatus has a reduced pad cut rate, and if the pad cut rate falls below a predetermined value, the dresser 3 has reached the end of its life and is replaced. . The dresser break-in device can also be used to determine the dresser life. The dresser running-in device 20 is provided with dresser life judging means for judging the dresser life from the cut rate of the dresser running-in material 22, dressing the dresser running-in material 22 with the dresser 3 used for dressing the polishing pad 4, and measuring the cut rate. The life of the dresser 3 is determined from the measured cut rate.

ドレッサー慣らし装置２０で交換時のドレッサー３の慣らし運転を行う際、慣らし運転が進むと、ドレッサー３を駆動するモータ１４のトルク電流値が変化する（例えば、トルク電流値は次第に減少し慣らし運転の終了点が近づくと一定値となる）から、このトルク電流値を監視し、ドレッサー３の慣らし運転の終了点（エンドポイント）を検出するようにしてもよい。   When the running-in operation of the dresser 3 at the time of replacement is performed by the dresser running-in device 20, when the running-in operation proceeds, the torque current value of the motor 14 that drives the dresser 3 changes (for example, the torque current value gradually decreases and the running-in operation is performed). The torque current value may be monitored so that the end point (end point) of the break-in operation of the dresser 3 may be detected.

ドレッサー３による研磨テーブル１の研磨パッド４上面のドレッシングは、１枚の基板の研磨終了毎に行うようになっている。このドレッシング動作は、回転するドレッサー３を回転するテーブル１の研磨パッド４の上面に所定圧力で押圧して行うが、その際ドレッサー３は図３に示すように、揺動中心Ｏを中心として回転するドレッサー３のドレッシング面を研磨パッド４上面に当接させ、且つ矢印Ｄに示すように半径方向に往復揺動（旋回）させて行う。１回（１工程）のドレッシングは、ドレッサー３の複数回の往復揺動運動によるドレッシングにより行っている。また、ドレッシングによる研磨パッド４のプロファイル（表面形状）の測定は、図９に示すように研磨パッド４の上面を半径方向に複数のゾーンに区分し、各ゾーンの所定点ａ〜ｅの研磨パッド４の厚さを測定して行う。 Dressing of the upper surface of the polishing pad 4 of the polishing table 1 by the dresser 3 is performed every time the polishing of one substrate is completed. This dressing operation is performed by pressing the rotating dresser 3 against the upper surface of the polishing pad 4 of the rotating table 1 with a predetermined pressure. At this time, the dresser 3 rotates about the oscillation center O as shown in FIG. The dressing surface of the dresser 3 is brought into contact with the upper surface of the polishing pad 4 and reciprocally swung (rotated) in the radial direction as indicated by an arrow D. Dressing once (1 step) is performed by the dressing by multiple reciprocating rocking motion of the dresser 3. Also, the profile (surface shape) of the polishing pad 4 by dressing is measured by dividing the upper surface of the polishing pad 4 into a plurality of zones in the radial direction as shown in FIG. 9 and polishing pads at predetermined points a to e in each zone. 4 is measured.

このときドレッサー３の一回の往復揺動運動で、ａ〜ｅの５点の研磨パッド４の厚さを連続して測定すると高速のデータ処理が要求され、データ処理の速い高価なデータ処理装置が必要になる。そこでここでは、１回のドレッサー３の往復揺動運動によるドレッシングで、ａ〜ｅの１点のみ、即ち、ドレッサー３の１回の往復揺動運動によるドレッシングで複数ゾーン内の１つのゾーン内の所定点のみの研磨パッド４の厚さを測定し（例えば、１回目の往復揺動運動によるドレッシングでａ点、２回目の往復揺動運動によるドレッシングでｂ点、３回目の往復揺動運動によるドレッシングでｃ点・・・というように研磨パッド４の厚さを測定し）、複数の往復揺動運動によるドレッシングからなる１工程のドレッシング（図ではａ〜ｅの５回の往復揺動運動によるドレッシング）を経てａ〜ｅの全点の研磨パッド４の厚さを測定している。また、ノイズの影響を防ぐため各点の研磨パッド４の厚さ測定を複数回行いその平均値を採って各点の研磨パッド４の厚さとしている。図ではａ点の研磨パッド４の厚さを複数回とってその平均値をａ点の厚さ、ｂ点の研磨パッド４の厚さを複数回とってその平均値をｂ点の厚さというように、各点の研磨パッド４の厚さを複数回とってその平均値を各点の研磨パッド４の厚さとしている。


At this time, if the thickness of the polishing pad 4 at five points a to e is continuously measured by one reciprocating swinging motion of the dresser 3, high-speed data processing is required, and an expensive data processing device with high data processing speed. Is required. Therefore, here, dressing by reciprocating rocking motion of the dresser 3 is performed once , and only one point a to e, that is, dressing by reciprocating rocking motion of the dresser 3 by one reciprocating rocking motion is performed in one zone in a plurality of zones. Measure the thickness of the polishing pad 4 only at a predetermined point (for example, point a for dressing by the first reciprocating rocking motion , point b by dressing by the second reciprocating rocking motion, and by the third reciprocating rocking motion) dressing the thickness of the polishing pad 4 is measured and so the point c, ... in), 5 times reciprocating swing motion of a~e in dressings (figure 1 step consisting dressing by a plurality of reciprocatingly swing the dressings) by through measures the thickness of the polishing pad 4 of all points a to e. Further, in order to prevent the influence of noise, the thickness of the polishing pad 4 at each point is measured a plurality of times, and the average value is taken as the thickness of the polishing pad 4 at each point. In the figure, the thickness of the polishing pad 4 at point a is taken a plurality of times, the average value is the thickness of point a, the thickness of the polishing pad 4 at point b is taken a plurality of times, and the average value is called the thickness of point b. Thus, the thickness of the polishing pad 4 at each point is taken a plurality of times, and the average value is taken as the thickness of the polishing pad 4 at each point.


上記のように研磨パッド４の各点の厚さ測定を繰り返すことにより、複数枚の基板の研磨とドレッシングで、複数ゾーンの所定点の研磨パッド４の厚さが測定でき、研磨パッドの１つのプロファイルが得られる。それを、複数セット繰り返し、平均化して研磨パッドのプロファイルとし研磨レシピに反映する。図９の例でいうと、５枚の基板の研磨とドレッシングで、ａ〜ｅの各点の研磨パッド４の厚さが測定でき、１つの研磨パッドのプロファイルが得られる。これを、３セット繰り返し（基板１５枚分）、平均化して研磨パッドのプロファイルとし研磨レシピに反映する。   By repeating the thickness measurement at each point of the polishing pad 4 as described above, the thickness of the polishing pad 4 at a predetermined point in a plurality of zones can be measured by polishing and dressing a plurality of substrates. A profile is obtained. A plurality of sets are repeated and averaged to obtain a polishing pad profile, which is reflected in the polishing recipe. In the example of FIG. 9, by polishing and dressing five substrates, the thickness of the polishing pad 4 at each point a to e can be measured, and a profile of one polishing pad is obtained. This is repeated 3 sets (for 15 substrates), averaged and reflected as a polishing pad profile in the polishing recipe.

図１０は本発明に係る基板研磨装置の概念図である。矢印Ａ方向に回転する研磨テーブル１の上面に貼り付けられた研磨パッド４の上面に矢印Ｃ方向に回転するドレッサー３が所定の押圧力で当接し、ドレッサーアーム２（図３参照）の揺動により矢印Ｄに示すように、研磨パッド４の半径方向に往復動しながら、研磨パッド４のドレッシングを行う。この研磨パッド４の上面を半径方向に環帯状にＺ１〜Ｚ７のゾーンに区分し、ドレッシング中に各ゾーンＺ１〜Ｚ７の中心にドレッサー３が位置するのを、位置制御モータ又はパルスモータから選ばれるモータ２９に供給されるパルス数で検出し、その研磨パッド４の厚さを測定する。ドレッサー３の研磨パッド４上面の半径方向の位置は、モータ２９に供給されるパルス数で精度よく測定できる。Ｔ１〜Ｔ７は各ゾーンＺ１〜Ｚ７の中心部の研磨パッド４の厚さの測定値を示す。   FIG. 10 is a conceptual diagram of a substrate polishing apparatus according to the present invention. The dresser 3 rotating in the direction of arrow C abuts on the upper surface of the polishing pad 4 attached to the upper surface of the polishing table 1 rotating in the direction of arrow A with a predetermined pressing force, and the dresser arm 2 (see FIG. 3) swings. As shown by arrow D, the polishing pad 4 is dressed while reciprocating in the radial direction of the polishing pad 4. The upper surface of the polishing pad 4 is divided into zones Z1 to Z7 in a ring shape in the radial direction, and the positioner 3 is positioned at the center of each zone Z1 to Z7 during dressing is selected from a position control motor or a pulse motor. Detection is performed by the number of pulses supplied to the motor 29, and the thickness of the polishing pad 4 is measured. The position in the radial direction of the upper surface of the polishing pad 4 of the dresser 3 can be accurately measured by the number of pulses supplied to the motor 29. T1 to T7 indicate measured values of the thickness of the polishing pad 4 at the center of each zone Z1 to Z7.

上記各ゾーンＺ１〜Ｚ７の研磨パッド４の厚さの測定値Ｔ１〜Ｔ７から研磨パッド４のドレッシングのプロファイルを測定し、このプロファイルをドレッサー３を駆動制御する駆動制御装置にフィードバックし、ドレッシング条件（ドレッサー３の研磨パッド押圧力、ドレッサー３の研磨パッド上面の半径方向移動速度、ドレッサー３の回転速度等）に反映する。これにより、研磨パッド４の理想的なドレッシングプロファイルを得ることが可能となる。   The dressing profile of the polishing pad 4 is measured from the measured values T1 to T7 of the thickness of the polishing pad 4 in each of the zones Z1 to Z7, and this profile is fed back to the drive control device that drives and controls the dresser 3. This is reflected in the pressing force of the polishing pad of the dresser 3, the radial movement speed of the upper surface of the polishing pad of the dresser 3, the rotational speed of the dresser 3, and the like. Thereby, an ideal dressing profile of the polishing pad 4 can be obtained.

３０は下面に被研磨基板Ｗを保持して回転軸（図示せず）を中心に矢印Ｇ方向に回転するトップリングである。該トップリング３０は下端外周にリテーナリング３２が設けられており、該リテーナリング３２の内部にメンブレン４１で構成された環帯状の圧力室Ｍ１〜Ｍ４が設けられており、圧力室Ｍ１〜Ｍ４のメンブレン４１の下面は被研磨基板Ｗを保持する保持面となっている。各圧力室Ｍ１〜Ｍ４の圧力を調整することにより、その部分に当接する被研磨基板Ｗの研磨パッド４への押圧力を制御することができる。   Reference numeral 30 denotes a top ring that holds the substrate to be polished W on its lower surface and rotates in the direction of arrow G about a rotation axis (not shown). The top ring 30 is provided with a retainer ring 32 on the outer periphery of the lower end, and annular belt-shaped pressure chambers M1 to M4 each including a membrane 41 are provided inside the retainer ring 32. The lower surface of the membrane 41 is a holding surface that holds the substrate W to be polished. By adjusting the pressure in each of the pressure chambers M1 to M4, it is possible to control the pressing force to the polishing pad 4 of the substrate W to be polished that is in contact with that portion.

上記のように各ゾーンＺ１〜Ｚ７の研磨パッド４の厚さの測定値Ｔ１〜Ｔ７を得て、これにより、各圧力室に連通する流体路ごとに設けられた圧力コントローラを制御して上記メンブレン４１で形成された圧力室Ｍ１〜Ｍ４の圧力が調整できるため、各圧力室の圧力を、研磨パッド４の厚さに追従した分布とすることができる。したがって、研磨パッド４のドレッシングプロファイルに影響されない適正な被研磨基板Ｗの研磨プロファイルが実現できる。一例としては、研磨パッド４の厚さの測定値が小さいゾーン（領域）に対応する圧力室の圧力を他の研磨パッド４の厚さの測定値が大きいゾーン（領域）より選択的に高くすることにより、被研磨基板Ｗの研磨量を均等にすることが可能となるが、これに限定されない。要は、研磨パッド４のプロファイルに応じて、研磨プロファイルを実現するべくゾーンごとの押圧力が可変とされたフィードバック制御がなされる。連続して研磨を行う場合、パッドプロファイルが経時的に変化していくため、この変化も考慮変数として加えた上で、押圧力を制御することもできる。   As described above, the measured values T1 to T7 of the thickness of the polishing pad 4 in each of the zones Z1 to Z7 are obtained, and thereby the pressure controller provided for each fluid path communicating with each pressure chamber is controlled to control the membrane. Since the pressures of the pressure chambers M <b> 1 to M <b> 4 formed by 41 can be adjusted, the pressure of each pressure chamber can be distributed according to the thickness of the polishing pad 4. Therefore, an appropriate polishing profile of the substrate W to be polished that is not affected by the dressing profile of the polishing pad 4 can be realized. As an example, the pressure in the pressure chamber corresponding to the zone (region) where the measured value of the polishing pad 4 is small is selectively made higher than the zone (region) where the measured value of the other polishing pad 4 is large. As a result, the polishing amount of the substrate to be polished W can be made uniform, but the present invention is not limited to this. In short, according to the profile of the polishing pad 4, feedback control is performed in which the pressing force for each zone is variable in order to realize the polishing profile. When polishing is performed continuously, the pad profile changes with time, so that the pressing force can be controlled after adding this change as a consideration variable.

研磨パッド４の厚さの測定値が小さいゾーン（領域）に対応する圧力室の圧力を他の研磨パッド４の厚さの測定値が大きいゾーン（領域）より選択的に高くする。また、上記のように研磨パッド４のドレッシングをドレッサー３を駆動制御する駆動制御装置にフィードバックし、理想的な研磨パッド４のドレッシングプロファイルを得た上で、この理想的な研磨パッド４のドレッシングプロファイルにより、圧力室Ｍ１〜Ｍ４の圧力を調整することにより、更に適正な被研磨基板Ｗの研磨プロファイルが実現できる。   The pressure in the pressure chamber corresponding to the zone (region) where the measured value of the polishing pad 4 is small is selectively made higher than the zone (region) where the measured value of the thickness of the other polishing pad 4 is large. Also, the dressing profile of the polishing pad 4 is fed back to the drive control device that drives and controls the dresser 3 as described above to obtain an ideal dressing profile of the polishing pad 4, and then the dressing profile of the ideal polishing pad 4 is obtained. Thus, by adjusting the pressure in the pressure chambers M1 to M4, a more appropriate polishing profile of the substrate W to be polished can be realized.

図１１は、本発明に係る基板研磨装置に用いられるトップリングの概略構成を示す縦断面図である。トップリング３０は、円筒容器状のトップリング本体３１と、該トップリング本体３１の下端に固定された環状のリテーナリング３２を備えている。トップリング本体３１の内側には環状の加圧シート３３が配置され、加圧シート３３はトップリング本体３１と加圧シート支持部材３４に挟持されトップリング本体３１の内周下面に支持されている。トップリング本体３１の上面中央部にはトップリング駆動軸３５が配設されており、トップリング本体３１とトップリング駆動軸３５とは自在継手部３６により連結されている。自在継手部３６は、ベアリングボール３７を具備し、トップリング本体３１及びトップリング駆動軸３５を互いに傾動可能とする球面軸受機構と、トップリング駆動軸３５の回転力をトップリング本体３１に伝達する図示しない回転力伝達機構とを備えている。トップリング本体３１はトップリング駆動軸３５に対して傾動可能で、且つトップリング駆動軸３５の回転力を受けて回転する。   FIG. 11 is a longitudinal sectional view showing a schematic configuration of a top ring used in the substrate polishing apparatus according to the present invention. The top ring 30 includes a cylindrical container-like top ring main body 31 and an annular retainer ring 32 fixed to the lower end of the top ring main body 31. An annular pressure sheet 33 is disposed inside the top ring body 31, and the pressure sheet 33 is sandwiched between the top ring body 31 and the pressure sheet support member 34 and supported on the inner peripheral lower surface of the top ring body 31. . A top ring drive shaft 35 is disposed at the center of the top surface of the top ring body 31, and the top ring body 31 and the top ring drive shaft 35 are connected by a universal joint 36. The universal joint portion 36 includes a bearing ball 37, and transmits the rotational force of the top ring drive shaft 35 to the top ring body 31 and a spherical bearing mechanism that allows the top ring body 31 and the top ring drive shaft 35 to tilt relative to each other. And a rotational force transmission mechanism (not shown). The top ring body 31 can be tilted with respect to the top ring drive shaft 35 and rotates by receiving the rotational force of the top ring drive shaft 35.

トップリング本体３１とリテーナリング３２で画成された空間内には、円板状のチャッキングプレート３８が配置され、該チャッキングプレート３８は加圧シート３３の下面にチャッキングプレート保持部材３９を介して保持されている。トップリング本体３１と加圧シート３３とチャッキングプレート３８とで、チャッキングプレート３８の上部に圧力室Ｍ５を形成している。加圧シート３３はゴム等の弾性体からなり、圧力室Ｍ５内を加圧・減圧することにより、チャッキングプレート３８は上下動可能となっている。チャッキングプレート３８の下面は被研磨基板Ｗを保持する基板保持面となっている。   A disc-shaped chucking plate 38 is disposed in a space defined by the top ring body 31 and the retainer ring 32, and the chucking plate 38 has a chucking plate holding member 39 on the lower surface of the pressure sheet 33. Is held through. The top ring body 31, the pressure sheet 33, and the chucking plate 38 form a pressure chamber M5 above the chucking plate 38. The pressurizing sheet 33 is made of an elastic body such as rubber, and the chucking plate 38 can move up and down by pressurizing and depressurizing the inside of the pressure chamber M5. The lower surface of the chucking plate 38 is a substrate holding surface that holds the substrate W to be polished.

基板保持面となっているチャッキングプレート３８の下面には環状のメンブレン４１ａ、４１ｂ、４１ｃ、４１ｄが配置されている。メンブレン４１ａはその上端部をチャッキングプレート３８と環状のメンブレンホルダー５１で挟持してチャッキングプレート３８の下面中央部に取り付けられている。メンブレン４１ｂはその上端部をチャッキングプレート３８と環状のメンブレンホルダー５１で挟持してチャッキングプレート３８の下面のメンブレン４１ａの外周側に取り付けられている。メンブレン４１ｃはその上端部をチャッキングプレート３８の外周縁部下面と環状のメンブレンホルダー５２で挟持してチャッキングプレート３８の下面のメンブレン４１ｂの外周側に取り付けられている。メンブレン４１ａ、４１ｂ、４１ｃ、４１ｄのそれぞれと被研磨基板Ｗとチャッキングプレート３８とで、圧力室Ｍ１、Ｍ２、Ｍ３、Ｍ４が形成されている。   Annular membranes 41a, 41b, 41c, and 41d are disposed on the lower surface of the chucking plate 38 serving as a substrate holding surface. The upper end of the membrane 41 a is sandwiched between the chucking plate 38 and the annular membrane holder 51 and is attached to the center of the lower surface of the chucking plate 38. The upper end of the membrane 41b is sandwiched between the chucking plate 38 and the annular membrane holder 51 and attached to the outer peripheral side of the membrane 41a on the lower surface of the chucking plate 38. The upper end of the membrane 41c is attached to the outer peripheral side of the membrane 41b on the lower surface of the chucking plate 38 with the upper end portion sandwiched between the lower surface of the outer peripheral edge of the chucking plate 38 and the annular membrane holder 52. Pressure chambers M1, M2, M3, and M4 are formed by the membranes 41a, 41b, 41c, and 41d, the substrate to be polished W, and the chucking plate 38, respectively.

圧力室Ｍ１、Ｍ２、Ｍ３、Ｍ４のそれぞれには、流体路４２、４３、４４、４５が接続されており、該流体路４２、４３、４４、４５はそれぞれ圧力コントローラＰ１、Ｐ２、Ｐ３、Ｐ４を介して圧縮空気源４８に接続されている。また、圧力室Ｍ５にも流体路４６が接続されており、該流体路４６も圧力コントローラＰ５を介して圧縮空気源４８に接続されている。また、Ｓ１、Ｓ２、Ｓ３、Ｓ４はそれぞれ流体路４２、４３、４４、４５に流れる流体（圧縮空気）の流速、圧力、流量を検知するためのセンサである。   Fluid passages 42, 43, 44, 45 are connected to the pressure chambers M1, M2, M3, M4, respectively, and the fluid passages 42, 43, 44, 45 are respectively pressure controllers P1, P2, P3, P4. Is connected to a compressed air source 48. The fluid passage 46 is also connected to the pressure chamber M5, and the fluid passage 46 is also connected to the compressed air source 48 via the pressure controller P5. S1, S2, S3, and S4 are sensors for detecting the flow velocity, pressure, and flow rate of the fluid (compressed air) flowing through the fluid passages 42, 43, 44, and 45, respectively.

上記構成のトップリング３０において、圧力コントローラＰ５により圧縮空気源４８から流体路４６を通って圧力室Ｍ５に供給される圧力空気量を制御することにより、トップリング３０に保持された被研磨基板Ｗ全体の研磨パッド４上面を押し付ける押圧力を制御できる。また、圧力コントローラＰ１、Ｐ２、Ｐ３、Ｐ４により圧縮空気源４８から流体路４２、４３、４４、４５を通って圧力室Ｍ１、Ｍ２、Ｍ３、Ｍ４に供給される圧力空気量を制御することにより、各圧力室Ｍ１、Ｍ２、Ｍ３、Ｍ４の下面に位置する被研磨基板Ｗのゾーンの押圧力を制御できる。   In the top ring 30 configured as described above, the substrate W to be polished held by the top ring 30 is controlled by controlling the amount of pressure air supplied from the compressed air source 48 through the fluid path 46 to the pressure chamber M5 by the pressure controller P5. The pressing force for pressing the entire upper surface of the polishing pad 4 can be controlled. Further, by controlling the amount of pressure air supplied from the compressed air source 48 to the pressure chambers M1, M2, M3, and M4 through the fluid passages 42, 43, 44, and 45 by the pressure controllers P1, P2, P3, and P4. The pressing force of the zone of the substrate W to be polished located on the lower surface of each pressure chamber M1, M2, M3, M4 can be controlled.

流体路４２、４３、４４、４５を流れる流体（圧縮空気）流速、圧力、流量はセンサＳ１、Ｓ２、Ｓ３、Ｓ４に検知され、該検知データＤ１は制御部５０に送られる。制御部５０には被研磨基板Ｗの研磨に必要とする研磨プロファイルや測定された研磨パッドプロファイル等の各種データＤ２が入力されており、制御部５０はこの各種データＤ２とセンサＳ１、Ｓ２、Ｓ３、Ｓ４で検知された検知データＤ１とから、被研磨基板Ｗを目標研磨プロファイルに研磨するために必要な各圧力室Ｍ１、Ｍ２、Ｍ３、Ｍ４、Ｍ５の圧力を算出すると共に、各圧力室に供給する圧縮空気の流速、圧力、流量を算出し、各圧力コントローラＰ１、Ｐ２、Ｐ３、Ｐ４、Ｐ５に制御信号ＣＳ１、ＣＳ２、ＣＳ３、ＣＳ４、ＣＳ５を送り、各圧力コントローラＰ１、Ｐ２、Ｐ３、Ｐ４、Ｐ５により各圧力室Ｍ１、Ｍ２、Ｍ３、Ｍ４、Ｍ５に送る圧縮空気の流速、圧力、流量を制御する。   Fluid (compressed air) flow velocity, pressure, and flow rate flowing through the fluid passages 42, 43, 44, and 45 are detected by the sensors S 1, S 2, S 3, and S 4, and the detection data D 1 is sent to the control unit 50. Various data D2 such as a polishing profile necessary for polishing the substrate W to be polished and a measured polishing pad profile are input to the control unit 50. The control unit 50 receives the various data D2 and sensors S1, S2, S3. From the detection data D1 detected in S4, the pressures of the pressure chambers M1, M2, M3, M4, and M5 necessary for polishing the substrate W to be polished to the target polishing profile are calculated and stored in the pressure chambers. The flow rate, pressure, and flow rate of the compressed air to be supplied are calculated, and control signals CS1, CS2, CS3, CS4, CS5 are sent to the pressure controllers P1, P2, P3, P4, P5, and the pressure controllers P1, P2, P3, The flow rate, pressure, and flow rate of the compressed air sent to each pressure chamber M1, M2, M3, M4, and M5 are controlled by P4 and P5.

図１２は、本発明に係る基板研磨装置において、上記測定した研磨パッドのドレッシングプロファイルを被研磨基板の研磨に反映させるための処理フローを示す図である。先ず、必要とする被研磨基板の研磨プロファイルを入力する（ステップＳＴ１）。次に研磨パッド４のドレッシングを行い（ステップＳＴ２）、研磨パッド４の各ゾーンの厚さを測定し、研磨パッド４の厚さプロファイルを取得（測定）する（ステップＳＴ３）。一方、被研磨基板Ｗの研磨を行い（ステップＳＴ４）、研磨面の研磨レートを測定し、研磨プロファイルデータを取得する（ステップＳＴ５）。   FIG. 12 is a diagram showing a processing flow for reflecting the measured dressing profile of the polishing pad to the polishing of the substrate to be polished in the substrate polishing apparatus according to the present invention. First, the required polishing profile of the substrate to be polished is input (step ST1). Next, dressing of the polishing pad 4 is performed (step ST2), the thickness of each zone of the polishing pad 4 is measured, and the thickness profile of the polishing pad 4 is obtained (measured) (step ST3). On the other hand, the substrate to be polished W is polished (step ST4), the polishing rate of the polished surface is measured, and polishing profile data is acquired (step ST5).

前記ステップＳＴ３で取得された研磨パッド厚さプロファイルと理想研磨パッド厚さプロファイルを比較すると共に、前記ステップＳＴ５で取得された研磨プロファイルと理想研磨プロファイルを比較する（ステップＳＴ６）。次に前記ステップＳＴ６で比較した結果、理想プロファイルとの差が目標値内か否かを判断し、目標内（Ｙｅｓ）であったら処理を終了し、目標値外（Ｎｏ）であったら、ドレッシング条件を変更するためと、研磨条件を変更するための演算を実行する（ステップＳＴ８）。   The polishing pad thickness profile acquired in step ST3 is compared with the ideal polishing pad thickness profile, and the polishing profile acquired in step ST5 is compared with the ideal polishing profile (step ST6). Next, as a result of the comparison in step ST6, it is determined whether or not the difference from the ideal profile is within the target value. If the difference is within the target (Yes), the process is terminated. Calculations for changing the conditions and for changing the polishing conditions are executed (step ST8).

上記演算結果に基づいてドレッシング条件（研磨パッド４の上面での各ゾーンＺ１〜Ｚ７におけるドレッサー３の押圧圧力、ドレッサー３の回転数、ドレッサ３の矢印Ｄ方向の速度等）を変更し（ステップＳＴ９）、被研磨基板の研磨を行う。つまり、該ドレッシング条件の変更をドレッサーの駆動制御装置にフィードバックする。また、前記演算結果に基づいて研磨条件（メンブレン３２の各圧力室Ｍ１〜Ｍ４の圧力Ｐ１〜Ｐ４等）を変更し（ステップＳＴ１０）、被研磨基板の研磨を行う。つまり、該研磨条件の変更をトップリングの駆動制御装置にフィードバックする。   Based on the above calculation results, dressing conditions (such as the pressing pressure of the dresser 3 in the zones Z1 to Z7 on the upper surface of the polishing pad 4, the rotational speed of the dresser 3, the speed of the dresser 3 in the direction of arrow D) are changed (step ST9). ) Polish the substrate to be polished. That is, the change of the dressing condition is fed back to the dresser drive control device. Further, the polishing conditions (pressures P1 to P4 of the pressure chambers M1 to M4 of the membrane 32) are changed based on the calculation result (step ST10), and the substrate to be polished is polished. That is, the change of the polishing condition is fed back to the top ring drive control device.

以上、本発明の実施形態を説明したが、本発明は上記実施形態に限定されるものではなく、特許請求の範囲、及び明細書と図面に記載された技術的思想の範囲内において種々の変形が可能である。   Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims and the specification and drawings. Is possible.

従来のドレッシング装置を備えた研磨装置の構成例を示す図である。It is a figure which shows the structural example of the grinding | polishing apparatus provided with the conventional dressing apparatus. 本発明に係るドレッシング装置を備えた研磨装置の概略構成例を示す側断面図である。It is a sectional side view which shows the schematic structural example of the grinding | polishing apparatus provided with the dressing apparatus which concerns on this invention. 本発明に係るドレッシング装置を備えた研磨装置の概略構成例を示す平面図である。It is a top view which shows the schematic structural example of the grinding | polishing apparatus provided with the dressing apparatus which concerns on this invention. 本発明に係るドレッシング装置のドレッサー慣らし装置の概略構成例を示す図である。It is a figure which shows the schematic structural example of the dresser break-in apparatus of the dressing apparatus which concerns on this invention. 本発明に係るドレッシング装置のドレッサー慣らし装置の通常状態を示す図である。It is a figure which shows the normal state of the dresser break-in apparatus of the dressing apparatus which concerns on this invention. 本発明に係るドレッシング装置のドレッサー慣らし装置のドレッサー慣らし状態を示す図である。It is a figure which shows the dresser running-in state of the dresser running-in apparatus of the dressing apparatus which concerns on this invention. 本発明に係るドレッシング装置のドレッサー慣らし装置のドレッサー洗浄状態を示す図である。It is a figure which shows the dresser washing | cleaning state of the dresser break-in apparatus of the dressing apparatus which concerns on this invention. 本発明に係るドレッシング装置のドレッサー慣らし装置のドレッサー待機状態を示す図である。It is a figure which shows the dresser standby state of the dresser running-in apparatus of the dressing apparatus which concerns on this invention. 本発明に係るドレッシング装置による研磨パッドのプロファイルの測定手順を示す図である。It is a figure which shows the measurement procedure of the profile of a polishing pad by the dressing apparatus which concerns on this invention. 本発明に係る基板研磨装置の概念図である。1 is a conceptual diagram of a substrate polishing apparatus according to the present invention. 本発明に係る基板研磨装置に用いられるトップリングの概略構成を示す縦断面図である。It is a longitudinal section showing a schematic structure of a top ring used for a substrate polisher concerning the present invention. 本発明に係る基板研磨装置において、測定した研磨パッドのドレッシングプロファイルを被研磨基板の研磨に反映させるための処理フローを示す図である。It is a figure which shows the processing flow for reflecting the dressing profile of the measured polishing pad in grinding | polishing of a to-be-polished substrate in the board | substrate polish apparatus which concerns on this invention.

符号の説明Explanation of symbols

１ 研磨テーブル
２ ドレッサーアーム
３ ドレッサー
４ 研磨パッド
５ ドレッシング液供給ノズル
６ 旋回機構
６−１，６−２ 歯車
７ モータ
８ ドレッサーシャフト
９ 金属層
１０ 渦電流センサ
１１ ロータリコネクタ
１２ コントローラ
１３ 表示装置
１４ モータ
１５ 動力伝達機構
１６ 昇降シリンダ
１７ 検知モニタ
２０ ドレッサー慣らし装置
２１ 台部材
２２ ドレッサー慣らし材
２３ ドレッサー慣らし部
２４ 洗浄液噴射孔
２５ ドレッサー洗浄ブラシ
２６ 洗浄液収容槽
２７ ドレッサー慣らし部支持シャフト
２８ シール機構
２９ モータ
３０ トップリング
３１ トップリング本体
３２ リテーナリング
４１ メンブレン
４１ａ〜４１ｄ メンブレン
４２ 流体路
４３ 流体路
４４ 流体路
４５ 流体路
４６ 流体路
４８ 圧縮空気源
５０ 制御部
５１ メンブレンホルダー
Ｍ１〜Ｍ５ 圧力室
Ｐ１〜Ｐ４ 圧力コントローラ
Ｓ１〜Ｓ４ センサ DESCRIPTION OF SYMBOLS 1 Polishing table 2 Dresser arm 3 Dresser 4 Polishing pad 5 Dressing liquid supply nozzle 6 Turning mechanism 6-1 and 6-2 Gear 7 Motor 8 Dresser shaft 9 Metal layer 10 Eddy current sensor 11 Rotary connector 12 Controller 13 Display device 14 Motor 15 Power transmission mechanism 16 Elevating cylinder 17 Detection monitor 20 Dresser break-in device 21 Base member 22 Dresser break-in material 23 Dresser break-in part 24 Cleaning liquid injection hole 25 Dresser cleaning brush 26 Cleaning liquid storage tank 27 Dresser break-in part support shaft 28 Seal mechanism 29 Motor 30 Top ring 31 Top Ring Body 32 Retainer Ring 41 Membrane 41a to 41d Membrane 42 Fluid Path 43 Fluid Path 44 Fluid Path 45 Fluid Path 46 Fluid Path 48 Compressed Air Source 0 control unit 51 membrane holder M1~M5 pressure chamber P1~P4 pressure controller S1~S4 sensor

Claims (4)

研磨テーブル上の研磨パッドにドレッサーを当接させ所定のドレッシング条件で研磨パッドをドレッシングし、該ドレッシングした研磨パッドのプロファイルを測定する研磨パッドのプロファイル測定方法であって、
前記ドレッサーは前記研磨パッド上面を半径方向に揺動しながら複数回の揺動運動によるドレッシングで１工程のドレッシングを行うようになっており、
前記研磨パッドを半径方向に複数のゾーンに分け、前記ドレッサーの１回の揺動運動によるドレッシングで前記複数ゾーン内の１つのゾーンの所定点の研磨パッド面の高さを測定し、前記ドレッサーの次回の揺動運動によるドレッシングで異なるゾーンの所定点の研磨パッド面の高さを測定するように、順次前記ドレッサーの揺動運動によるドレッシングで前回と異なるゾーンの所定点の研磨パッド面の高さを測定し、前記１工程のドレッシングの複数の揺動運動によるドレッシングを経て全てのゾーンの所定点の研磨パッド面の高さを測定し、該測定結果から前記研磨パッドのプロファイルを得ることを特徴とする研磨パッドのプロファイル測定方法。 A polishing pad profile measurement method for dressing a polishing pad under a predetermined dressing condition by bringing a dresser into contact with a polishing pad on a polishing table and measuring a profile of the dressed polishing pad,
The dresser is adapted to perform the dressings of one step in the dressing by multiple oscillating motion while swinging the polishing pad upper surface radially
The polishing pad is divided into a plurality of zones in a radial direction, the height of a polishing pad surface at a predetermined point in one zone in the plurality of zones is measured by dressing by one swinging motion of the dresser , and the dresser In order to measure the height of the polishing pad surface at a predetermined point in a different zone in the dressing by the next rocking motion, the height of the polishing pad surface at a predetermined point in the zone different from the previous time by dressing by the rocking motion of the dresser sequentially. Measuring the height, measuring the height of the polishing pad surface at a predetermined point in all zones through dressing by a plurality of swinging motions of the dressing in one step, and obtaining the profile of the polishing pad from the measurement result A polishing pad profile measuring method. 請求項１に記載の研磨パッドのプロファイル測定方法において、
複数工程のドレッシングを経て前記各ゾーンの所定点の研磨パッド面の高さを複数回測定し、その平均値を当該所定点の研磨パッドの高さとし、前記研磨パッドのプロファイルを得ることを特徴とする研磨パッドのプロファイル測定方法。 In the polishing pad profile measuring method according to claim 1,
A plurality of steps of dressing, the height of the polishing pad surface at a predetermined point in each zone is measured a plurality of times, and the average value is taken as the height of the polishing pad at the predetermined point to obtain the polishing pad profile Measuring method of polishing pad profile. 請求項１に記載の研磨パッドのプロファイル測定方法において、In the polishing pad profile measuring method according to claim 1,
前記研磨テーブルの内部に設けられた渦電流センサにより、ドレッサーの金属層に渦電流を誘導させて、該渦電流の大きさを測定し、前記研磨パッドの高さを測定することを特徴とする研磨パッドのプロファイル測定方法。  An eddy current sensor provided inside the polishing table induces eddy current in a metal layer of a dresser, measures the magnitude of the eddy current, and measures the height of the polishing pad. Polishing pad profile measurement method. 請求項１に記載の研磨パッドのプロファイル測定方法において、  In the polishing pad profile measuring method according to claim 1,
前記各ゾーンの所定点は、各ゾーンの中心位置であることを特徴とする研磨パッドのプロファイル測定方法。  The polishing pad profile measuring method, wherein the predetermined point of each zone is a center position of each zone.
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US12/292,685 US8870625B2 (en) 2007-11-28 2008-11-24 Method and apparatus for dressing polishing pad, profile measuring method, substrate polishing apparatus, and substrate polishing method
TW105130310A TWI572447B (en) 2007-11-28 2008-11-27 Apparatus for dressing polishing pad
KR1020080118622A KR101005043B1 (en) 2007-11-28 2008-11-27 Profile measuring method
TW097145887A TWI458589B (en) 2007-11-28 2008-11-27 Profile measuring method
TW103122476A TWI565561B (en) 2007-11-28 2008-11-27 Method and apparatus for dressing polishing pad, substrate polishing apparatus, and substrate polishing method
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KR20090055494A (en) 2009-06-02

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