CN112476243A

CN112476243A - Chemical mechanical polishing device and chemical mechanical polishing process polishing pad cleaning device

Info

Publication number: CN112476243A
Application number: CN202011345465.2A
Authority: CN
Inventors: 李松; 宋振伟; 张守龙
Original assignee: Hua Hong Semiconductor Wuxi Co Ltd
Current assignee: Hua Hong Semiconductor Wuxi Co Ltd
Priority date: 2020-11-26
Filing date: 2020-11-26
Publication date: 2021-03-12

Abstract

The invention relates to a chemical mechanical polishing device, which comprises a polishing pad, a polishing head and a polishing head, wherein the polishing pad is stuck on a polishing disk; a polishing head for holding a wafer to be polished and applying a downward pressure to the wafer to be polished to attach the surface of the wafer to be polished downward to the polishing pad; and the cleaning device is arranged on the grinding pad and used for scraping the surface of the grinding pad in the grinding operation process and removing impurities on the grinding pad, wherein the cleaning device comprises a first cleaning disc and a second cleaning disc, the first cleaning disc and the second cleaning disc are arranged on a cleaning rod of the cleaning device in parallel, the surface of the first cleaning disc comprises a plurality of bricks, and the surface of the second cleaning disc comprises a blue brush so as to more thoroughly clean different types or by-products with different particle sizes on the grinding pad.

Description

Chemical mechanical polishing device and chemical mechanical polishing process polishing pad cleaning device

Technical Field

The invention relates to a cleaning technology of semiconductor integrated circuit manufacturing equipment, in particular to a polishing pad cleaning device for a chemical mechanical polishing process.

Background

Chemical Mechanical Polishing (CMP) is a common process used in semiconductor integrated circuit manufacturing. Chemical Mechanical Polishing (CMP) is a complex process that planarizes the surface of a wafer by relative motion between the wafer and a polishing pad using equipment commonly referred to as a grinder or polisher. When the grinding head rotates under the drive of the motor, the grinding head rotates relatively. Meanwhile, the grinding fluid is conveyed to the grinding pad through a grinding fluid supply pipe (tube) and is uniformly distributed on the grinding pad through centrifugal force, chemical components in the grinding fluid and the ground wafer are subjected to chemical reaction, insoluble substances are converted into soluble substances (chemical reaction process), and then the soluble substances are removed from the surface of the polished wafer through mechanical friction, so that the surface material of the wafer is removed through the combination of mechanical action and chemical reaction, and the global planarization effect is achieved.

By-products such as grinding particles and the like generated in the wafer grinding process are remained on the surface of the grinding pad and in the groove, if the by-products are not cleaned in time, the wafer can be scratched, and products can be scrapped when the by-products are serious. After the wafer is ground, the grinding pad needs to be cleaned through the cleaning brush, in the prior art, the grinding pad is cleaned through high-pressure water flow, impurity particles possibly generated in the grinding process are washed away, and the wafer is prevented from being scratched in the subsequent grinding process.

Disclosure of Invention

The present invention provides a chemical mechanical polishing apparatus, comprising: a polishing pad adhered to the polishing plate; a polishing head for holding a wafer to be polished and applying a downward pressure to the wafer to be polished to attach the surface of the wafer to be polished downward to the polishing pad; and the cleaning device is arranged on the grinding pad and used for scraping the surface of the grinding pad in the grinding operation process and removing impurities on the grinding pad, wherein the cleaning device comprises a first cleaning disc and a second cleaning disc, the first cleaning disc and the second cleaning disc are arranged on a cleaning rod of the cleaning device in parallel, the surface of the first cleaning disc comprises a plurality of bricks, and the surface of the second cleaning disc comprises a blue brush.

Furthermore, the first cleaning disk and the second cleaning disk rotate in the same direction and opposite to the rotation direction of the polishing pad.

Furthermore, the first cleaning disc and the second cleaning disc rotate in opposite directions.

Furthermore, the first cleaning disc and the second cleaning disc are arranged in parallel along the length direction of the cleaning rod.

Further, the first cleaning disk is closer to the end of the cleaning rod than the second cleaning disk.

Furthermore, the blue brush is uniformly arranged on the surface of the second cleaning disc.

The invention also provides a cleaning device for the polishing pad in the chemical mechanical polishing process, which comprises: first clearance dish and second clearance dish, first clearance dish and second clearance dish set up on a washing pole side by side, and the surface of first clearance dish includes a plurality of bricks, and the surface of second clearance dish includes the blue brush, and first clearance dish and second clearance dish are arranged in on the grinding pad for strickle off the surface of grinding pad and get rid of the impurity on the grinding pad in the grinding operation in-process.

Drawings

FIG. 1 is a schematic view of a chemical mechanical polishing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic surface view of a second cleaning disk according to an embodiment of the invention.

Detailed Description

The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and the same reference numerals denote the same elements throughout. It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

Spatial relationship terms such as "under …", "under …", "below", "under …", "above …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

In an embodiment of the present invention, a chemical mechanical polishing apparatus is provided, referring to fig. 1 showing a schematic view of a chemical mechanical polishing apparatus according to an embodiment of the present invention, as shown in fig. 1, the chemical mechanical polishing apparatus includes: a polishing pad 11 attached to the polishing platen 10; a polishing head 20 holding a wafer 30 to be polished and applying a downward pressure to the wafer 30 to be polished to attach the surface to be polished of the wafer 30 downward onto the polishing pad 11; and the cleaning device 40 is arranged on the grinding pad 11 and used for scraping off the surface of the grinding pad 11 and removing impurities on the grinding pad 11 in the grinding operation process, wherein the cleaning device 40 comprises a first cleaning disc 41 and a second cleaning disc 42, the first cleaning disc 41 and the second cleaning disc 43 are arranged on a cleaning rod 43 of the cleaning device 40 in parallel, the surface of the first cleaning disc 41 comprises a plurality of bricks, and the surface of the second cleaning disc 42 comprises a blue brush.

In one embodiment, the polishing pad 11 is flatly adhered to the polishing disk 10.

In one embodiment, the first conditioning disk 41 and the second conditioning disk 42 rotate in the same direction, and further in the opposite direction to the polishing pad 11. In one embodiment, the first cleaning disk 41 and the second cleaning disk 42 rotate in opposite directions.

In one embodiment, the range of motion of the first conditioning disk 41 and the second conditioning disk 42 is greater than the diameter of the wafer and does not exceed the radius of the polishing pad 11, ensuring that the wafer is within the range of the first conditioning disk 41 and the second conditioning disk 42 to condition the polishing pad 11.

In one embodiment of the present invention, as shown in fig. 1, the first cleaning disk 41 and the second cleaning disk 42 are juxtaposed in the lengthwise direction of the cleaning rod 43. And further, the first cleaning disk 41 is located closer to the end of the cleaning rod 43 than the second cleaning disk 42.

In one embodiment of the present invention, the blue brush is uniformly disposed on the surface of the second cleaning disk 42. In particular, reference is made to the schematic surface view of the second cleaning disc 42 shown in fig. 2.

The polishing pad 11 is cleaned by the first cleaning disk 41 and the second cleaning disk 42, and different cleaning parts are arranged on the surfaces of the first cleaning disk 41 and the second cleaning disk 42, for example, the cleaning part on the surface of the first cleaning disk 41 is masonry, and the cleaning part on the surface of the second cleaning disk 42 is blue brush, so that by-products with different types or different particle sizes on the polishing pad can be cleaned.

In one embodiment, an apparatus for cleaning a polishing pad in a cmp process is provided, with continued reference to fig. 1, including: the polishing pad comprises a first cleaning disc 41 and a second cleaning disc 42, wherein the first cleaning disc 41 and the second cleaning disc 43 are arranged on a cleaning rod 43 in parallel, the surface of the first cleaning disc 41 comprises a plurality of bricks, the surface of the second cleaning disc 42 comprises a blue brush, and the first cleaning disc 41 and the second cleaning disc 42 are arranged on the polishing pad 11 and used for scraping the surface of the polishing pad 11 and removing impurities on the polishing pad 11 in the polishing operation process.

In one embodiment, the first cleaning disk 41 and the second cleaning disk 42 rotate in the same direction. In one embodiment, the first cleaning disk 41 and the second cleaning disk 42 rotate in opposite directions.

In one embodiment of the present invention, the first cleaning disk 41 and the second cleaning disk 42 are juxtaposed in the lengthwise direction of the cleaning bar 43. And further, the first cleaning disk 41 is located closer to the end of the cleaning rod 43 than the second cleaning disk 42.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A chemical mechanical polishing apparatus, comprising:

a polishing pad adhered to the polishing plate;

a polishing head for holding a wafer to be polished and applying a downward pressure to the wafer to be polished to attach the surface of the wafer to be polished downward to the polishing pad; and

the cleaning device is arranged on the grinding pad and used for scraping the surface of the grinding pad in the grinding operation process and removing impurities on the grinding pad, the cleaning device comprises a first cleaning disc and a second cleaning disc, the first cleaning disc and the second cleaning disc are arranged on a cleaning rod of the cleaning device in parallel, the surface of the first cleaning disc comprises a plurality of bricks, and the surface of the second cleaning disc comprises a blue brush.

2. The chemical mechanical polishing apparatus of claim 1, wherein the first cleaning disk and the second cleaning disk rotate in the same direction and in the opposite direction to the polishing pad.

3. The chemical mechanical polishing apparatus of claim 1, wherein the first cleaning disk and the second cleaning disk rotate in opposite directions.

4. The chemical mechanical polishing apparatus of claim 1, wherein the first cleaning disk and the second cleaning disk are juxtaposed in a length direction of the cleaning bar.

5. A chemical mechanical polishing apparatus as set forth in claim 4 wherein the first cleaning disk is located closer to the end of the cleaning rod than the second cleaning disk.

6. The chemical mechanical polishing apparatus of claim 1, wherein the blue brush is uniformly disposed on the surface of the second cleaning disk.

7. A kind of chemical mechanical polishing craft abrades the cushion rinser, characterized by that, comprising:

first clearance dish and second clearance dish, first clearance dish and second clearance dish set up on a washing pole side by side, and the surface of first clearance dish includes a plurality of bricks, and the surface of second clearance dish includes the blue brush, and first clearance dish and second clearance dish are arranged in on the grinding pad for strickle off the surface of grinding pad and get rid of the impurity on the grinding pad in the grinding operation in-process.

8. The apparatus of claim 7, wherein the first cleaning disk and the second cleaning disk are juxtaposed along a length of the cleaning rod.

9. The apparatus of claim 7, wherein the first cleaning disk is closer to the end of the cleaning rod than the second cleaning disk.

10. The apparatus of claim 7, wherein the blue brush is uniformly disposed on the surface of the second cleaning disk.