TWI458589B - Profile measuring method - Google Patents

Profile measuring method Download PDF

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Publication number
TWI458589B
TWI458589B TW097145887A TW97145887A TWI458589B TW I458589 B TWI458589 B TW I458589B TW 097145887 A TW097145887 A TW 097145887A TW 97145887 A TW97145887 A TW 97145887A TW I458589 B TWI458589 B TW I458589B
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Taiwan
Prior art keywords
polishing pad
dresser
polishing
trimmer
trimming
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TW097145887A
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Chinese (zh)
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TW200936316A (en
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Tetsuji Togawa
Keisuke Namiki
Satoru Yamaki
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Ebara Corp
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Description

輪廓量測方法Contour measurement method

本發明係有關一種方法與裝置,用以藉由將修整器施壓頂抗於研磨墊而修整在研磨台上的研磨墊,本發明也有關一種研磨墊的輪廓量測方法、一種基板的研磨裝置、以及一種基板的研磨方法。The present invention relates to a method and apparatus for trimming a polishing pad on a polishing table by pressing a trimmer against a polishing pad. The present invention also relates to a method for measuring a profile of a polishing pad, and polishing of a substrate. A device, and a method of polishing a substrate.

近來在半導體元件高度整合技術上的進步,使得互連件(interconnect)之間的佈線型樣(wiring patterns)更小並且距離更窄。光微影(photolithography)是元件製程的其中一步。在光微影製程中的步進機需要非常平的影像平面(image plane),特別是當製作最寬只有0.5μm的互連件時,因為焦點的深度很小之故。因此便會使用實施化學機械研磨法(Chemical Mechanical Polishing,CMP)的研磨裝置,來平面化半導體晶圓的表面。Recent advances in semiconductor component high integration technology have resulted in smaller wiring patterns and narrower distances between interconnects. Photolithography is one step in the component process. Steppers in photolithography require a very flat image plane, especially when making interconnects up to 0.5 μm wide, because the depth of focus is small. Therefore, a polishing apparatus that performs chemical mechanical polishing (CMP) is used to planarize the surface of the semiconductor wafer.

傳統上,如第1圖所示,此種形式的研磨裝置通常包括:研磨台102,在其上表面固持用以提供研磨面之研磨墊(或是研磨布)100;頂環104,用來固持基板(例如,半導體晶圓)W,也就是要被研磨的工件。頂環104會旋轉基板W,並且以固定的壓力將基板W施壓頂抗於旋轉中的研磨台102上的研磨墊100,同時,噴嘴106會供應研磨液到研磨墊100上面,藉此將基板W的表面磨光成平坦的鏡面。可使用的研磨液的例子包括具有研磨粒懸浮在其中的鹼性溶液,而研磨粒則諸如二氧化矽微粒。藉由採用此類研磨液,基板W係藉由鹼性溶液的化學研磨作用以及研磨粒的機械研磨作用之結合而被化學地與機械地研磨。Conventionally, as shown in FIG. 1, the polishing apparatus of this type generally comprises: a polishing table 102 on which a polishing pad (or a polishing cloth) 100 for providing an abrasive surface is held; a top ring 104 for The substrate (for example, a semiconductor wafer) W, that is, the workpiece to be polished, is held. The top ring 104 rotates the substrate W and presses the substrate W against the polishing pad 100 on the rotating polishing table 102 at a fixed pressure, while the nozzle 106 supplies the polishing liquid onto the polishing pad 100, thereby The surface of the substrate W is polished to a flat mirror surface. Examples of the polishing liquid that can be used include an alkaline solution in which abrasive grains are suspended, and abrasive particles such as cerium oxide particles. By using such a polishing liquid, the substrate W is chemically and mechanically ground by a combination of chemical polishing of an alkaline solution and mechanical grinding of abrasive grains.

該研磨裝置也具有修整裝置,其係配置在研磨台102的旁邊。此修整裝置包括修整器108,用來修復經過研磨過程而劣化之研磨墊100的研磨面。修整器108被組構成以自己的軸心來旋轉,並會使其修整面接觸到旋轉中的研磨台102上之研磨墊100的研磨面,藉此移除在研磨面上的研磨液以及碎屑,並能平面化和修整研磨墊100的研磨面。通常會採用鑽石修整器來作為修整器108,以刮拭和平面化研磨墊100的研磨面。修整後的研磨面之均勻度會對後續基板研磨過程中的研磨準確度影響很大。The polishing apparatus also has a finishing device disposed adjacent to the polishing table 102. The dressing device includes a finisher 108 for repairing the abrasive surface of the polishing pad 100 that has deteriorated through the grinding process. The dresser 108 is configured to rotate with its own axis and will have its trim surface contact the abrasive surface of the polishing pad 100 on the rotating polishing table 102, thereby removing the polishing liquid on the polishing surface and breaking The chips are capable of planarizing and trimming the abrasive surface of the polishing pad 100. A diamond trimmer is typically employed as the trimmer 108 to wipe and planarize the abrasive surface of the polishing pad 100. The uniformity of the polished surface after trimming will have a great influence on the grinding accuracy during the subsequent substrate grinding process.

當以新的修整器汰換修整器108時,會發生下面的問題。因為個別的修整器其性質不同,新的修整器可能會具有不同的研磨墊切削率(cutting rate)。結果,去除率(removal rate)以及研磨輪廓也可能會改變。當以新的修整器更換修整器108之後,通常要以指定的壓力將新修整器朝研磨墊100施壓,藉此來對新修整器實施預處理。然而預處理的過程是很棘手的,這是因為其可能會在研磨基板W的開始階段對於研磨性能有不利的影響。此外於修整過程中所移除的稠漿(slurry)可能會牢牢地沈積在修整器108上,而不利於研磨性能的穩定性。When the dresser 108 is replaced with a new dresser, the following problems occur. Because of the different properties of individual trimmers, new trimmers may have different cutting pad cutting rates. As a result, the removal rate and the grinding profile may also change. After the dresser 108 is replaced with a new finisher, the new dresser is typically pre-treated with a specified pressure to apply pressure to the polishing pad 100. However, the process of pretreatment is very troublesome because it may have an adverse effect on the polishing performance at the beginning of the grinding of the substrate W. In addition, the slurry removed during the trimming process may be firmly deposited on the dresser 108, which is detrimental to the stability of the polishing performance.

本發明的目的係提出一種修整方法與修整裝置,可讓新更換的修整器保持在一定的研磨墊切削率;可避免去除率與研磨輪廓因為具有不同性質的個別修整器而發生變化;可預處理新安裝的修整器而不會對研磨墊產生不利的影響;以及可避免固態的稠漿沈積在修整器上。本發明的另一目的係提出一種輪廓量測方法。本發明再一目的係提出一種基板研磨裝置以及基板研磨方法,其能夠從修整器量測出的切削率來求得研磨墊輪廓。本發明又一目的係提出一種基板研磨裝置以及基板研磨方法,其能夠依照研磨墊的輪廓來對基板實施研磨。The object of the present invention is to provide a dressing method and a trimming device, which can keep the newly replaced dresser at a certain polishing pad cutting rate; and can avoid the removal rate and the grinding profile change due to individual trimmers having different properties; Handling the newly installed dresser without adversely affecting the polishing pad; and avoiding the deposition of solid thick slurry on the dresser. Another object of the present invention is to provide a profile measurement method. Still another object of the present invention is to provide a substrate polishing apparatus and a substrate polishing method which are capable of determining a polishing pad profile from a cutting rate measured by a dresser. Still another object of the present invention is to provide a substrate polishing apparatus and a substrate polishing method capable of polishing a substrate in accordance with a contour of a polishing pad.

為了解決上述弊端,本發明其中一個面向係提出一種方法,用來測量在預定的修整條件下被修整器修整過的研磨墊輪廓。該方法包括朝研磨墊的徑向(radial direction)反複在研磨墊的上表面上移動修整器,以便對研磨墊實施修整程序;在修整程序期間,量測於研磨面上之多個區域的其中一者之預定點處之研磨墊上表面的高度,而該多個區域係沿著研磨墊的徑向被配置;重複實施修整器的反複移動以及對於研磨墊上表面之高度的量測,以便量測出所有區域中之研磨墊上表面的高度。In order to solve the above drawbacks, one of the aspects of the present invention proposes a method for measuring the profile of a polishing pad that has been trimmed by a dresser under predetermined finishing conditions. The method includes repeatedly moving a trimmer on an upper surface of the polishing pad toward a radial direction of the polishing pad to perform a trimming process on the polishing pad; during the trimming process, measuring a plurality of regions on the polishing surface The height of the upper surface of the polishing pad at a predetermined point, and the plurality of regions are arranged along the radial direction of the polishing pad; repeating the repeated movement of the trimmer and measuring the height of the upper surface of the polishing pad for measurement The height of the upper surface of the polishing pad in all areas.

依據如上所述之本發明,可以量測出研磨墊的輪廓,並且不需要使用昂貴的高性能資料處理裝置。According to the invention as described above, the profile of the polishing pad can be measured without using an expensive high performance data processing device.

在本發明較佳的面向中,該方法尚包括進一步重複實施修整器的反複移動以及對於研磨墊上表面之高度的量測,以便得到個別區域的測量值,並從測量值計算平均值,而每個平均值代表在各個區域中的上表面高度。In a preferred aspect of the invention, the method further comprises repeatedly performing repeated movements of the trimmer and measuring the height of the upper surface of the polishing pad to obtain measurements of individual regions and calculating an average from the measured values, each The average values represent the upper surface heights in the various regions.

依照如上所述之本發明,可以精確地量測出研磨墊的輪廓。According to the invention as described above, the contour of the polishing pad can be accurately measured.

本發明的另一面向提出一種方法,用來修整位於研磨台上的研磨墊。該方法包括:藉由在預定的修整條件下將修整器施壓頂抗於研磨墊而修整研磨墊;量測研磨墊的切削率;以及回饋切削率至預定的修整條件。Another aspect of the invention proposes a method for trimming a polishing pad located on a polishing table. The method includes: trimming the polishing pad by applying a trimming force against the polishing pad under predetermined finishing conditions; measuring a cutting rate of the polishing pad; and feeding back the cutting rate to a predetermined finishing condition.

根據前述的本發明,即使更換新的修整器,研磨墊的切削率仍然可以保持不變。因此,可避免由於個別修整器的性質不同,導致去除率以及研磨的輪廓有所變化。According to the foregoing invention, the cutting rate of the polishing pad can be maintained even if a new dresser is replaced. Therefore, it is possible to avoid variations in the removal rate and the profile of the grinding due to the different properties of the individual dressers.

本發明的另一面向提出一種修整裝置,用來修整位於研磨台上的研磨墊。該裝置包括:修整器,係設置成藉由在預定的修整條件下對研磨墊施壓而修整研磨墊;修整器操作控制器,係設置成用來控制修整器的操作,並建立起預定的修整條件;以及切削率量測部,設置成用來量測研磨墊的切削率,並且回饋所測得的切削率至修整器操作控制器。修整器操作控制器是設置成在預定修整條件中反映切削率。Another aspect of the present invention provides a finishing device for trimming a polishing pad located on a polishing table. The apparatus includes: a trimmer configured to trim the polishing pad by applying pressure to the polishing pad under predetermined conditioning conditions; the trimmer operating controller is configured to control the operation of the trimmer and establish a predetermined a trimming condition; and a cutting rate measuring section configured to measure a cutting rate of the polishing pad and to feed back the measured cutting rate to the trimmer operation controller. The trimmer operation controller is configured to reflect the cutting rate in predetermined trim conditions.

根據前述的本發明,即使更換新的修整器,研磨墊的切削率仍然可以保持不變。According to the foregoing invention, the cutting rate of the polishing pad can be maintained even if a new dresser is replaced.

根據本發明的較佳面向,切削率量測部係設置成藉由偵測下列至少一者來量測切削率:用來驅動研磨台之馬達的轉矩電流之變化、用來驅動修整器之馬達的轉矩電流之變化、以及當修整器接觸到研磨墊時修整器之接觸表面之垂直位置的變化。According to a preferred aspect of the present invention, the cutting rate measuring section is configured to measure the cutting rate by detecting at least one of: a change in a torque current of a motor for driving the grinding table, and a driving device for driving the trimmer The change in the torque current of the motor and the change in the vertical position of the contact surface of the dresser when the dresser contacts the polishing pad.

本發明的另一面向提出一種修整裝置,用來修整研磨台上的研磨墊。該裝置包括:修整器,設置成藉由對研磨墊的上表面進行施壓來修整研磨墊,該修整器可操作成在包含研磨墊上表面的預定範圍內擺動;以及修整器預處理裝置,設置成用來預處理修整器。修整器預處理裝置係設置在研磨墊的上表面外側之該預定範圍的一部分。Another aspect of the present invention provides a finishing device for trimming a polishing pad on a polishing table. The apparatus includes: a trimmer configured to trim a polishing pad by applying pressure to an upper surface of the polishing pad, the trimmer operable to oscillate within a predetermined range including an upper surface of the polishing pad; and a dresser pretreatment device, setting Used to pre-process the trimmer. The dresser pretreatment device is disposed on a portion of the predetermined range outside the upper surface of the polishing pad.

根據上述的本發明,可對修整器實施預處理而不會影響正在使用的研磨墊。According to the invention as described above, the dresser can be pretreated without affecting the polishing pad being used.

本發明較佳面向的修整器預處理裝置係包括切削率量測裝置,其係設置成用來量測研磨墊的切削率。The dresser pretreatment apparatus preferably oriented to the present invention includes a cutting rate measuring device configured to measure the cutting rate of the polishing pad.

根據上述的本發明,可以偵測修整器預處理的結束時間(end point)。According to the present invention described above, the end point of the trimmer pre-processing can be detected.

本發明較佳面向的修整裝置,尚包括使用壽命判定元件,設置成根據切削率量測裝置所測得的切削率,來判定修整器的使用壽命。The dressing device preferably oriented to the present invention further includes a service life determining member configured to determine the service life of the dresser based on the cutting rate measured by the cutting rate measuring device.

根據上述的本發明,在將屆修整器的使用壽命時,可以更換修整器。如此可保持研磨墊的最佳狀況。According to the invention as described above, the dresser can be replaced during the life of the trimmer. This keeps the best condition of the polishing pad.

本發明較佳面向的修整器預處理裝置,包括:轉矩電流量測部,設置成用來測量驅動修整器之馬達的轉矩電流;以及結束時間偵測器,設置成根據由轉矩電流量測部所測得的轉矩電流,來偵測修整器預處理的結束時間。The dresser pre-processing apparatus preferably of the present invention comprises: a torque current measuring unit configured to measure a torque current of a motor driving the trimmer; and an end time detector configured to be based on the torque current The torque current measured by the measuring unit detects the end time of the trimmer pre-processing.

本發明較佳面向的修整裝置尚包括清洗裝置,係組構成,當修整器的預處理裝置正在預處理修整器時,清洗修整器的修整面。The dressing device preferably oriented by the present invention further comprises a cleaning device, which is constructed in a group, and when the pretreatment device of the dresser is pretreating the dresser, the dressing surface of the dresser is cleaned.

根據上述的本發明,在修整期間黏附到修整器的稠漿與固態碎屑可以被移除,並且能避免稠漿與固態碎屑沈積在修整器上。因此,修整器可保持在用來修整研磨墊的適當狀態。According to the present invention as described above, the thick and solid debris adhering to the dresser during trimming can be removed, and the thick slurry and solid debris can be prevented from being deposited on the dresser. Therefore, the dresser can be maintained in a proper state for trimming the polishing pad.

本發明的另一面向提出一種修整裝置,用來修整位在研磨台上的研磨墊。該裝置包括:修整器,設置成繞著自己的軸心來旋轉,並藉由以預定力量向研磨墊的上表面施壓而修整研磨墊,並且該修整器係連接到修整器的手臂;修整器擺動機構,設置成使修整器在研磨墊的上表面上朝研磨墊的徑向擺動;修整器位置量測裝置,設置成用來測量修整器在研磨墊上表面上的徑向位置;切削率量測裝置,設置成用來測量由修整器所修整的研磨墊之切削率;研磨墊輪廓量測裝置,設置成從定義在研磨墊上表面的多個區域處測得的研磨墊切削率來得到研磨墊的輪廓,而多個區域的位置則是藉由修整器位置量測裝置來測量;以及修整器操作控制器,設置成用來控制修整器的操作。研磨墊輪廓量測裝置所測量的研磨墊輪廓,係回授給修整器操作控制器。Another aspect of the present invention provides a finishing device for trimming a polishing pad positioned on a polishing table. The apparatus includes: a trimmer disposed to rotate about its own axis, and trimming the polishing pad by applying pressure to the upper surface of the polishing pad with a predetermined force, and the trimmer is attached to the arm of the dresser; trimming a swinging mechanism arranged to cause the dresser to swing in a radial direction of the polishing pad on the upper surface of the polishing pad; a trimmer position measuring device configured to measure a radial position of the trimmer on the upper surface of the polishing pad; a measuring device configured to measure a cutting rate of the polishing pad trimmed by the dresser; the polishing pad profile measuring device is configured to obtain a polishing pad cutting rate measured at a plurality of regions defined on the upper surface of the polishing pad The contour of the polishing pad, while the position of the plurality of regions is measured by the trimmer position measuring device; and the trimmer operating controller is configured to control the operation of the trimmer. The polishing pad profile measured by the polishing pad profile measuring device is fed back to the trimmer operation controller.

根據上述的本發明,研磨墊輪廓量測裝置所測量的研磨墊輪廓,係回授給修整器操作控制器。因此,可實施研磨墊的修整以便與實際的輪廓一致。換言之,實際的輪廓可以被改變成理想的輪廓。該多個區域可沿著研磨墊的徑向來安排。According to the invention as described above, the polishing pad profile measured by the polishing pad profile measuring device is fed back to the trimmer operation controller. Therefore, the polishing pad can be trimmed to conform to the actual contour. In other words, the actual contour can be changed to the desired contour. The plurality of regions can be arranged along the radial direction of the polishing pad.

本發明較佳面向的修整器擺動機構包括馬達,作為用來擺動修整器手臂的驅動源,而修整器位置量測裝置則是設置成根據供應至馬達的脈衝數(pulse number)來測量修整器的徑向位置。該馬達可採用位置控制馬達(position control motor)或是脈衝馬達(pulse motor,像是步進馬達或伺服馬達)。The preferred embodiment of the dresser swing mechanism includes a motor as a drive source for swinging the trimmer arm, and the dresser position measuring device is configured to measure the dresser based on the pulse number supplied to the motor. Radial position. The motor can be a position control motor or a pulse motor such as a stepper motor or a servo motor.

本發明的另一面向提出一種基板研磨裝置,其包括:用來支持研磨墊的研磨台;頂環,設置成用來旋轉基板,並且在旋轉基板的同時,以預定的力量將基板施壓頂抗於研磨墊;頂環操作控制器,設置成用來控制頂環的操作;修整器,設置成繞著自己的軸心來旋轉,並且藉由以預定力量對研磨墊的上表面施壓而修整研磨墊,而修整器被連接到修整器手臂;修整器擺動機構,設置成使修整器在研磨墊的上表面朝研磨墊的徑向擺動;修整器位置量測裝置,設置成用來測量修整器在研磨墊上表面上的徑向位置;切削率量測裝置,設置成用來測量由修整器所修整的研磨墊之切削率;研磨墊輪廓量測裝置,設置成從定義在研磨墊之上表面中的多個區域處測得的研磨墊切削率來得到研磨墊的輪廓,而多個區域的位置則是藉由修整器位置的量測裝置來測量;修整器操作控制器,設置成用來控制修整器的操作;以及基板輪廓量測裝置,設置成用來測量基板上之薄膜的去除輪廓(removal profile)。研磨墊輪廓量測裝置所測量的研磨墊輪廓,係回授給修整器操作控制器,而由基板輪廓量測裝置所測量的基板上之薄膜的去除輪廓,則回授給頂環操作控制器。Another aspect of the present invention provides a substrate polishing apparatus comprising: a polishing table for supporting a polishing pad; a top ring configured to rotate the substrate, and pressing the substrate with a predetermined force while rotating the substrate Resisting to the polishing pad; a top ring operation controller configured to control the operation of the top ring; the trimmer being arranged to rotate about its own axis and by applying pressure to the upper surface of the polishing pad with a predetermined force The polishing pad is trimmed, and the trimmer is attached to the trimmer arm; the trimmer swinging mechanism is configured to swing the trimmer on the upper surface of the polishing pad toward the radial direction of the polishing pad; the trimmer position measuring device is configured to measure The radial position of the dresser on the upper surface of the polishing pad; the cutting rate measuring device is configured to measure the cutting rate of the polishing pad trimmed by the dresser; the polishing pad profile measuring device is set to be defined from the polishing pad The polishing pad cutting rate measured at a plurality of regions in the upper surface to obtain the contour of the polishing pad, and the positions of the plurality of regions are measured by the measuring device of the position of the dresser; the dresser As a controller arranged to control operation of the finisher; contour measuring apparatus and a substrate, arranged to measure the removal of the thin film on the substrate contour (removal profile). The polishing pad profile measured by the polishing pad profile measuring device is fed back to the trimmer operation controller, and the removal profile of the film on the substrate measured by the substrate profile measuring device is fed back to the top ring operation controller. .

根據上述的本發明,可實施基板的研磨以及研磨墊的修整,以便根據研磨墊的輪廓使實際的輪廓一致。換言之,實際的輪廓可以被改變成理想的輪廓。因此,能改善基板研磨以及研磨墊修整的準確度。再者,根據本發明可利用已經修整成研磨墊理想輪廓的研磨墊來研磨基板,以具有在基板上之薄膜的理想去除輪廓。According to the invention as described above, the grinding of the substrate and the finishing of the polishing pad can be performed to make the actual contours uniform according to the contour of the polishing pad. In other words, the actual contour can be changed to the desired contour. Therefore, the accuracy of substrate polishing and polishing pad dressing can be improved. Moreover, in accordance with the present invention, the substrate can be abraded using a polishing pad that has been tailored to the desired contour of the polishing pad to have a desired removal profile of the film on the substrate.

本發明較佳面向的修整器擺動機構包括馬達,該馬達包括作為用來擺動修整器手臂的驅動源的位置控制馬達或是脈衝馬達,而修整器位置量測裝置則是設置成根據輸進馬達的脈衝數來測量修整器的徑向位置。Preferably, the trimmer swinging mechanism of the present invention comprises a motor comprising a position control motor or a pulse motor as a drive source for swinging the trimmer arm, and the dresser position measuring device is arranged to be based on the input motor The number of pulses is used to measure the radial position of the dresser.

本發明的另一面向提出一種基板的研磨裝置,其包括:用來支持研磨墊的研磨台;頂環,設置成用來旋轉基板,並且在旋轉基板的同時,將基板以預定的力量施壓頂抗於研磨墊,而該頂環則具有被分割成多個區域(regions)之基板固持表面;頂環操作控制器,設置成用來控制頂環的操作;修整器,設置成繞著自己的軸心來旋轉,並且藉由以預定力量對研磨墊的上表面施壓而修整研磨墊,而修整器被連接到修整器的手臂;修整器擺動機構,設置成使修整器在研磨墊的上表面上朝研磨墊的徑向擺動;修整器位置量測裝置,設置成用來測量修整器在研磨墊上表面的徑向位置;切削率量測裝置,設置成用來測量由修整器所修整的研磨墊之切削率;研磨墊輪廓的量測裝置,設置成從定義在研磨墊上表面中的多個區域處測得的研磨墊切削率來得到研磨墊的輪廓,而多個區域的位置則是藉由修整器位置量測裝置來測量;修整器操作控制器,設置成用來控制修整器的操作;以及施壓力量控制器,係組構成依照根據研磨墊輪廓量測裝置測得的研磨墊輪廓所得到的研磨墊厚度,來控制在基板固持表面之該等區域的施壓力量。Another aspect of the present invention is directed to a polishing apparatus for a substrate, comprising: a polishing table for supporting a polishing pad; a top ring configured to rotate the substrate, and pressing the substrate with a predetermined force while rotating the substrate The top is resistant to the polishing pad, and the top ring has a substrate holding surface divided into a plurality of regions; the top ring operation controller is arranged to control the operation of the top ring; the trimmer is set to surround itself The axis rotates, and the polishing pad is trimmed by applying pressure to the upper surface of the polishing pad with a predetermined force, and the trimmer is attached to the arm of the dresser; the dresser swing mechanism is disposed such that the dresser is on the polishing pad a radial swing toward the polishing pad on the upper surface; a trimmer position measuring device configured to measure a radial position of the dresser on the upper surface of the polishing pad; a cutting rate measuring device configured to measure the trimmed by the dresser The cutting rate of the polishing pad; the measuring device of the polishing pad profile is arranged to obtain the contour of the polishing pad from the polishing pad cutting rate measured at a plurality of regions defined in the upper surface of the polishing pad, and The position of the area is measured by the trimmer position measuring device; the trimmer operation controller is arranged to control the operation of the dresser; and the pressure amount controller is configured according to the contour of the polishing pad. The thickness of the polishing pad obtained by the device is measured by the profile of the polishing pad to control the amount of pressure applied to the regions of the substrate holding surface.

根據上述的本發明,可依照研磨墊的輪廓來對基板實施適當的研磨。舉例來說,可以實施回授控制,使得頂環之基板固持表面之對應於研磨墊較薄部分的區域之施壓力量可以選擇性地調整成高於其他區域的施壓力量。According to the invention as described above, the substrate can be suitably ground in accordance with the contour of the polishing pad. For example, feedback control can be implemented such that the amount of applied pressure of the substrate holding surface of the top ring corresponding to the thinner portion of the polishing pad can be selectively adjusted to be higher than the applied pressure of the other regions.

本發明的另一面向提出一種基板研磨方法,其包括:藉由以預定的力量將旋轉中的修整器施壓頂抗於研磨墊的上表面,來修整研磨台上之研磨墊;在研磨墊修整期間,使修整器在研磨墊的上表面上朝研磨墊的徑向擺動;測量修整器在研磨墊之上表面上的徑向位置;測量定義在研磨墊上表面中的多個區域處之研磨墊的切削率;從研磨墊的切削率求得研磨墊的輪廓;以頂環來固持基板,該頂環具有被分割成多個區域之基板固持表面;在旋轉基板的同時,將基板施壓頂抗於研磨墊的上表面;在將基板施壓頂抗於研磨墊之上表面的同時,依照依據研磨墊輪廓而得到的研磨墊厚度,來控制基板固持表面中之該等區域的施壓力量。Another aspect of the present invention provides a substrate polishing method comprising: trimming a polishing pad on a polishing table by pressing a rotating trimmer against a top surface of the polishing pad with a predetermined force; During trimming, the trimmer is swung in the radial direction of the polishing pad on the upper surface of the polishing pad; the radial position of the trimmer on the upper surface of the polishing pad is measured; and the measurement is defined at a plurality of regions in the upper surface of the polishing pad. The cutting rate of the pad; the contour of the polishing pad is determined from the cutting rate of the polishing pad; the substrate is held by a top ring having a substrate holding surface divided into a plurality of regions; and the substrate is pressed while rotating the substrate The top surface is resistant to the upper surface of the polishing pad; and the substrate is pressed against the upper surface of the polishing pad, and the pressure of the polishing pad is controlled according to the thickness of the polishing pad according to the contour of the polishing pad to control the pressure in the substrate holding surface power.

根據上述的本發明,可依照研磨墊的輪廓來對基板實施適當的研磨。舉例來說,可以實施回授控制,使得頂環的基板固持表面之對應於研磨墊較薄部分的區域之施壓的力量可以選擇性地調整成高於其他區域的施壓力量。According to the invention as described above, the substrate can be suitably ground in accordance with the contour of the polishing pad. For example, the feedback control can be implemented such that the force of the pressing of the substrate holding surface of the top ring corresponding to the thin portion of the polishing pad can be selectively adjusted to be higher than the applied pressure of the other regions.

本發明較佳面向之各個區域的研磨墊切削率,是於研磨墊各個區域的中心部分處的切削率量測值。The polishing pad removal rate of each region to which the present invention is preferably oriented is the measurement of the cutting rate at the central portion of each region of the polishing pad.

本發明較佳面向之各個區域的研磨墊切削率,是於各個區域中的多個部分處之切削率量測值的平均值。The polishing pad removal rate of each region to which the present invention is preferably oriented is the average of the cutting rate measurements at various portions in each region.

現在將佐以附圖,敘述本發明的實施例。第2圖與第3圖是根據本發明的實施例之具有修整裝置的研磨裝置。如第2圖與第3圖所示,根據該實施例的研磨裝置包括:研磨台1,在其上表面支持著研磨墊4;頂環(圖上未繪出),係在其下表面固持諸如半導體晶圓的基板,並且將基板施壓頂抗於研磨墊4的上表面;以及修整器3,係組構成用來修整研磨墊4的上表面。研磨台1係連接到馬達7,並且會如第2圖的箭頭A所示,繞著自己的軸旋轉。Embodiments of the present invention will now be described with reference to the drawings. 2 and 3 are grinding apparatuses having a dressing device according to an embodiment of the present invention. As shown in FIGS. 2 and 3, the polishing apparatus according to this embodiment includes a polishing table 1 which supports the polishing pad 4 on its upper surface, and a top ring (not shown) which is held on the lower surface thereof. A substrate such as a semiconductor wafer, and the substrate is pressed against the upper surface of the polishing pad 4; and the trimmer 3 is configured to trim the upper surface of the polishing pad 4. The polishing table 1 is connected to the motor 7, and will rotate about its own axis as indicated by the arrow A in Fig. 2.

修整器3係經由像是齒輪(gear)組件的動力傳輸機構15連接到馬達14。修整器3係進一步連接到升降缸(elevating cylinder)16。修整器3可朝箭頭B指示的方向,藉由升降缸16來垂直移動。在進行修整時,升降缸16係將修整器3向下移動,而以某壓力將修整器3施壓頂抗於研磨墊4,在此同時馬達14也會使修整器3朝箭頭C指示的方向繞著自己的軸旋轉。修整器3連接到修整器軸8,並且具有金屬層9作為修整器3的下表面。鑽石顆粒(圖上未繪出)藉由金屬鍍覆等的方式,緊密地接著到金屬層9。在研磨台1的上方,設置有修整液體供應噴嘴5,用來供應修整液體(通常為純水)到附接於研磨台1上表面的研磨墊4。馬達14與升降缸16是由修整器操作控制器(圖上未繪出)來控制,以便在所需的修整條件下操作修整器3,該修整條件包括修整器3對研磨墊4所施加的壓力,以及修整器3的轉速。The trimmer 3 is connected to the motor 14 via a power transmission mechanism 15 such as a gear assembly. The trimmer 3 is further connected to an elevating cylinder 16. The dresser 3 can be vertically moved by the lift cylinder 16 in the direction indicated by the arrow B. During the dressing, the lift cylinder 16 moves the dresser 3 downward, and presses the dresser 3 against the polishing pad 4 at a certain pressure, while the motor 14 also causes the dresser 3 to indicate the arrow C. The direction rotates around its own axis. The trimmer 3 is attached to the dresser shaft 8 and has a metal layer 9 as the lower surface of the dresser 3. The diamond particles (not shown) are closely adhered to the metal layer 9 by means of metal plating or the like. Above the polishing table 1, a conditioning liquid supply nozzle 5 is provided for supplying a conditioning liquid (usually pure water) to the polishing pad 4 attached to the upper surface of the polishing table 1. The motor 14 and lift cylinder 16 are controlled by a trimmer operation controller (not shown) to operate the trimmer 3 under the desired trim conditions including the trimmer 3 applied to the polishing pad 4. Pressure, and the speed of the dresser 3.

修整器3具有修整器臂2,其係藉由擺動機構6而繞著擺動軸(圖上未繪出)的中央軸心0朝箭頭D所指示的方向擺盪(擺動)。擺動機構6包括齒輪6-1、齒輪6-2以及作為驅動源的馬達29。馬達29可使用位置控制馬達或是脈衝馬達。更具體地說,馬達29可使用伺服馬達或是步進馬達。當研磨台1與修整器3繞其各自的軸心旋轉時,修整器3會被降下,將固持於金屬層9上的鑽石顆粒施壓頂抗於研磨墊4的上表面,利用研磨墊4與修整器3之間的相對運動來刮擦研磨墊4的上表面,藉此修整及回復研磨墊4的上表面。修整裝置尚包括修整器位置量測裝置(未繪出),其係組構成根據供應至馬達29的脈衝數來偵測位於研磨墊4的上表面上之修整器3的徑向。The dresser 3 has a dresser arm 2 which is oscillated (swinged) by a swing mechanism 6 about a central axis 0 of a swing axis (not shown) in a direction indicated by an arrow D. The swing mechanism 6 includes a gear 6-1, a gear 6-2, and a motor 29 as a drive source. The motor 29 can use a position control motor or a pulse motor. More specifically, the motor 29 can use a servo motor or a stepping motor. When the polishing table 1 and the dresser 3 are rotated about their respective axes, the dresser 3 is lowered, and the diamond particles held on the metal layer 9 are pressed against the upper surface of the polishing pad 4, and the polishing pad 4 is utilized. The relative movement with the dresser 3 scrapes the upper surface of the polishing pad 4, thereby trimming and restoring the upper surface of the polishing pad 4. The dressing device further includes a dresser position measuring device (not shown) which is configured to detect the radial direction of the dresser 3 on the upper surface of the polishing pad 4 in accordance with the number of pulses supplied to the motor 29.

在本例中是使用擺動機構6朝箭頭D指示的研磨墊4的徑向來擺盪(擺動)修整器手臂2。然而,除了擺動機構6以外,任何形式的移動機構,只要能沿著研磨墊4的徑向來移動修整器3,都可以採用。In this example, the dresser arm 2 is oscillated (swinged) in the radial direction of the polishing pad 4 indicated by the arrow D using the swing mechanism 6. However, in addition to the swinging mechanism 6, any type of moving mechanism can be employed as long as the dresser 3 can be moved in the radial direction of the polishing pad 4.

在研磨台1中設置有渦電流感測器10。此渦電流感測器10係組構成藉由往感測器線圈通入高頻的電流而在修整器3之金屬層9中誘發渦電流,並根據在金屬層9內所感應之渦電流的量度,來量測研磨墊4的厚度。研磨墊4是由介電材料(諸如發泡聚氨基甲酸酯(foamed polyurethane))所製成。因此,如果研磨墊4較厚,則修整器3之金屬層9內感應的渦電流便較小;如果研磨墊4較薄,則金屬層9內感應的渦電流便較大。故藉由測量金屬層9內所感應的渦電流,便能決定研磨墊4的厚度。渦電流感測器10具有連接至導線18之輸出端,而導線18則穿過研磨台1、研磨台支撐軸1a、以及安裝在研磨台支撐軸1a其中一端的旋轉連接器11而延伸到控制器12。控制器12係連接至顯示單元13。渦電流感測器10、控制器12以及顯示單元13組成了渦電流式的研磨墊厚度偵測監視器17。可使用滑動環(slip ring)來代替旋轉連接器11。An eddy current sensor 10 is provided in the polishing table 1. The eddy current sensor 10 is configured to induce an eddy current in the metal layer 9 of the trimmer 3 by passing a high frequency current to the sensor coil, and according to the eddy current induced in the metal layer 9. The thickness of the polishing pad 4 is measured by measurement. The polishing pad 4 is made of a dielectric material such as foamed polyurethane. Therefore, if the polishing pad 4 is thick, the eddy current induced in the metal layer 9 of the trimmer 3 is small; if the polishing pad 4 is thin, the eddy current induced in the metal layer 9 is large. Therefore, the thickness of the polishing pad 4 can be determined by measuring the eddy current induced in the metal layer 9. The eddy current sensor 10 has an output connected to the wire 18, and the wire 18 extends through the polishing table 1, the polishing table support shaft 1a, and the rotary connector 11 mounted at one end of the polishing table support shaft 1a to control 12 The controller 12 is connected to the display unit 13. The eddy current sensor 10, the controller 12, and the display unit 13 constitute an eddy current type pad thickness detecting monitor 17. Instead of the rotary connector 11, a slip ring can be used.

本例中,係在研磨墊4下方設置單一個渦電流感測器10,如第2圖所示。另一種作法為在研磨墊4下方設置多個渦電流感測器。在此情形中,如第9圖所示,可將研磨墊4的上表面分成沿著研磨墊4的徑向配置的多個區域,並在個別區域中心部分的下方設置渦電流感測器,以便量測個別區域中心部分的厚度。In this example, a single eddy current sensor 10 is disposed below the polishing pad 4, as shown in FIG. Another method is to provide a plurality of eddy current sensors under the polishing pad 4. In this case, as shown in FIG. 9, the upper surface of the polishing pad 4 may be divided into a plurality of regions arranged along the radial direction of the polishing pad 4, and an eddy current sensor is disposed below the central portion of the individual region, In order to measure the thickness of the central portion of the individual regions.

藉由使用渦電流式研磨墊厚度偵測監視器17,渦電流的感測器10可根據在修整器3之金屬層9內所產生的渦電流,來偵測出研磨墊4的厚度變化;由渦電流感測器10所偵測到的渦電流值會顯示在顯示單元13上,且量測出研磨墊4的厚度。根據來自渦電流感測器10的訊號,控制器12便能測量修整器3切削或修整研磨墊4的切削率。此經量測之切削率會從控制器12回授給控制馬達14以及升降缸16的修整器操作控制器,故可將切削率反映在修整條件中,像是修整器3藉由升降缸16對研磨墊4所施加的壓力、修整器3在研磨墊4的上表面沿著徑向的移動速度、以及馬達14旋轉修整器3的轉速。By using the eddy current pad thickness detecting monitor 17, the eddy current sensor 10 can detect the thickness variation of the polishing pad 4 according to the eddy current generated in the metal layer 9 of the trimmer 3; The value of the eddy current detected by the eddy current sensor 10 is displayed on the display unit 13, and the thickness of the polishing pad 4 is measured. Based on the signal from the eddy current sensor 10, the controller 12 can measure the cutting rate of the dresser 3 cutting or trimming the polishing pad 4. The measured cutting rate is fed back from the controller 12 to the trimmer operating controller of the control motor 14 and the lift cylinder 16, so that the cutting rate can be reflected in the trimming conditions, such as the trimmer 3 by the lift cylinder 16 The pressure applied to the polishing pad 4, the moving speed of the dresser 3 in the radial direction on the upper surface of the polishing pad 4, and the rotational speed of the motor 14 rotating the dresser 3.

本實施例中,由修整器3修整之研磨墊4的切削率,是藉由渦電流感測器10來量測。另一種作法為,藉由下述方法來測量切削率:偵測驅動(旋轉)研磨台1的馬達7之轉矩電流的變化;或是偵測驅動(旋轉)修整器3的馬達14之轉矩電流的變化;或是修整器3接觸研磨墊4的接觸表面之垂直位置的變化;或是以上這些變化的組合。修整器3的接觸表面之垂直位置的變化,可藉由測量修整器3之垂直位置的變化來偵測。如上述,在研磨墊4上表面上之修整器3的徑向位置係藉由供應到馬達29(例如位置控制馬達或是脈衝馬達)的脈衝數來偵測。然而,只要是能夠偵測出研磨墊4上表面上之修整器3的徑向位置,任何裝置或手段都可以採用。In the present embodiment, the cutting rate of the polishing pad 4 trimmed by the trimmer 3 is measured by the eddy current sensor 10. Alternatively, the cutting rate can be measured by detecting a change in the torque current of the motor 7 that drives (rotates) the polishing table 1 or detecting the rotation of the motor 14 that drives the (rotating) dresser 3. The change in the moment current; or the change in the vertical position of the contact surface of the dresser 3 contacting the polishing pad 4; or a combination of these variations. The change in the vertical position of the contact surface of the dresser 3 can be detected by measuring the change in the vertical position of the trimmer 3. As described above, the radial position of the dresser 3 on the upper surface of the polishing pad 4 is detected by the number of pulses supplied to the motor 29 (e.g., position control motor or pulse motor). However, any means or means can be employed as long as it is capable of detecting the radial position of the dresser 3 on the upper surface of the polishing pad 4.

上述的研磨裝置中,由於個別的修整器之性質不同,將修整器3更換成新的修整器可能會造成研磨墊4之切削程度(即切削率)的改變,而導致去除率以及基板上薄膜的研磨輪廓的改變。當以新的修整器更換修整器3之後,通常要以指定的壓力將新的修整器朝研磨墊4施壓,來對新的修整器實施預處理。然而預處理的過程是很棘手的,這是因為其對於研磨性能可能會有不利的影響,特別是在研磨基板W的開始階段。因此,本實施例中,研磨裝置具有修整器預處理裝置20,其係組構成在以新的修整器3汰換舊的修整器之後,對新的修整器3實施預處理,如第3圖所示。修整器的預處理裝置20配置在修整器3的閒置(idle)位置,也就是設置在研磨墊4上表面外側之修整器3擺動範圍的末端之位置。In the above-mentioned grinding device, due to the different properties of the individual dressers, replacing the dresser 3 with a new dresser may cause a change in the degree of cutting (ie, cutting rate) of the polishing pad 4, resulting in a removal rate and a film on the substrate. The change in the grinding profile. After the dresser 3 is replaced with a new dresser, the new dresser is typically pre-treated by applying a new dresser to the polishing pad 4 at a specified pressure. However, the pretreatment process is tricky because it may have an adverse effect on the abrasive performance, particularly at the beginning of the polishing of the substrate W. Therefore, in the present embodiment, the polishing apparatus has a dresser pretreatment apparatus 20, which is configured to perform pretreatment on the new finisher 3 after replacing the old finisher with the new finisher 3, as shown in Fig. 3. Shown. The pretreatment device 20 of the dresser is disposed at the idle position of the dresser 3, that is, at the end of the swinging range of the dresser 3 outside the upper surface of the polishing pad 4.

第4A圖是顯示修整器預處理裝置20的側視圖,而第4B圖是顯示修整器預處理裝置20的俯視圖。如第4A圖與第4B圖所示,修整器預處理裝置20具有修整器預處理部23,其包括基座21以及附著在基座21的修整器預處理構件22。修整器預處理部23由支撐軸27來支撐。修整器預處理部23可藉由垂直移動機構(圖上未繪出)沿著箭頭E指示的方向垂直移動;並且可藉由馬達(圖上末繪出)沿著箭頭F指示的方向繞著自己的軸心旋轉。修整器預處理構件22的製作材料與研磨墊4相同,例如發泡聚氨基甲酸酯。修整器預處理構件22具有許多清洗液噴射孔24,其開口向上,用來噴出清洗液,而清洗液是經由設置在基座21中的清洗液供應管道(圖上未繪出)被供應。朝徑向延伸的修整器清洗刷25(像是尼龍刷)可附著到修整器預處理部23之使修整器清洗刷25通過修整器預處理構件22的中央的位置。Fig. 4A is a side view showing the dresser pretreatment device 20, and Fig. 4B is a plan view showing the dresser pretreatment device 20. As shown in FIGS. 4A and 4B, the dresser pretreatment apparatus 20 has a dresser pretreatment section 23 including a base 21 and a dresser pretreatment member 22 attached to the base 21. The dresser pre-processing section 23 is supported by the support shaft 27. The dresser pre-processing section 23 can be vertically moved in the direction indicated by the arrow E by a vertical moving mechanism (not shown); and can be wound in the direction indicated by the arrow F by a motor (not shown) Rotate your own axis. The dresser pretreatment member 22 is made of the same material as the polishing pad 4, such as a foamed polyurethane. The dresser pretreatment member 22 has a plurality of cleaning liquid injection holes 24 that open upward for discharging the cleaning liquid, and the cleaning liquid is supplied through a cleaning liquid supply pipe (not shown) provided in the base 21. A radially-oriented dresser cleaning brush 25 (such as a nylon brush) can be attached to the position of the dresser pre-treating portion 23 that passes the dresser cleaning brush 25 through the center of the dresser pre-treatment member 22.

通常,如第5圖所示,修整器預處理部23係浸泡在清洗液槽26的清洗液Q中,以便保持濕潤。沿著支撐軸27四周設有密封機構28,以避免清洗液Q漏出清洗液槽26外頭。當以新的修整器3汰換用過的修整器之後,修整器的預處理部23會朝向已經就定位在修整器預處理部23正上方之閒置位置的新修整器3上升,並且以預定的力量對修整器3的下表面施壓,如第6圖所示。在此狀態下,修整器預處理部23會朝箭頭F指示的方向,繞著自己的軸心旋轉,在此同時修整器3也會朝箭頭C指示的方向繞著自己的軸心旋轉,造成修整器預處理部23與修整器3之間的相對運動。由於此種相對運動,修整器3係被預處理,同時修整器預處理構件22的上表面也會被修整器3刮除。修整器預處理部23所施加的壓力以及修整器預處理部23的轉速是由(圖上未繪出的)控制器來控制。修整器的預處理部23也可以保持不動,以取代同時旋轉修整器3與修整器預處理部23。Generally, as shown in Fig. 5, the dresser pretreatment portion 23 is immersed in the cleaning liquid Q of the cleaning liquid tank 26 so as to be kept moist. A sealing mechanism 28 is provided around the support shaft 27 to prevent the cleaning liquid Q from leaking out of the outer portion of the cleaning liquid tank 26. After replacing the used dresser with the new dresser 3, the pre-treatment portion 23 of the dresser will rise toward the new dresser 3 that has been positioned in the idle position directly above the dresser pre-treatment portion 23, and is scheduled The force exerts pressure on the lower surface of the dresser 3 as shown in Fig. 6. In this state, the dresser pre-processing section 23 rotates around its own axis in the direction indicated by the arrow F, while the dresser 3 also rotates around its own axis in the direction indicated by the arrow C, resulting in The relative movement between the dresser pre-treatment portion 23 and the dresser 3. Due to this relative movement, the dresser 3 is pretreated while the upper surface of the dresser pretreatment member 22 is also scraped off by the dresser 3. The pressure applied by the dresser pre-processing section 23 and the rotational speed of the dresser pre-processing section 23 are controlled by a controller (not shown). The pre-processing portion 23 of the dresser may also be held stationary instead of rotating the dresser 3 and the dresser pre-processing portion 23 at the same time.

修整器預處理裝置20具有設置在修整器預處理部23的基座21中的渦電流感測器(圖上未繪出)。該渦電流感測器和第2圖中的渦電流感測器10是相同的,並且被用來測量修整器預處理構件22的厚度變化,以及用來測量修整器預處理構件22的切削率。所測得的切削率係和修整器3在一般狀況下事先測得的切削率互相比較。如果測得的切削率為正常,便可判斷預處理程序已達預處理終點,而結束預處理程序。如果測得的切削率不正常,那麼修整器預處理部23便會繼續預處理修整器3,以便調整切削率。The dresser pretreatment apparatus 20 has an eddy current sensor (not shown) provided in the susceptor 21 of the dresser pretreatment section 23. The eddy current sensor is identical to the eddy current sensor 10 of FIG. 2 and is used to measure the thickness variation of the dresser pretreatment member 22 and to measure the cutting rate of the dresser pretreatment member 22. . The measured cutting rate is compared with the cutting rate previously measured by the dresser 3 under normal conditions. If the measured cutting rate is normal, it can be judged that the pre-processing program has reached the pre-processing end point and the pre-processing procedure is ended. If the measured cutting rate is not normal, the dresser pre-processing section 23 continues to pre-treat the dresser 3 to adjust the cutting rate.

通常,修整器3對研磨墊4的切削率,會在修整器3的使用壽命期間,隨著鑽石顆粒稜角部位的磨耗而逐漸降低。然而,全新的修整器傾向於在其使用壽命的開始階段對於研磨墊4的切削率展現出快速下降的現象,直到一段時間以後切削率的下降才不會這麼劇烈。因此便有可能藉由偵測切削率的下降不會這麼劇烈的該時間點,來判斷出修整器3之預處理的結束。In general, the cutting rate of the dresser 3 against the polishing pad 4 will gradually decrease as the edge of the diamond grain is worn during the life of the dresser 3. However, the new dresser tends to exhibit a rapid drop in the cutting rate of the polishing pad 4 at the beginning of its service life, and the reduction in the cutting rate will not be so severe until a certain period of time. Therefore, it is possible to judge the end of the pre-processing of the trimmer 3 by detecting the time point at which the drop in the cutting rate is not so severe.

修整器預處理構件22的切削率可藉由用以驅動修整器3之馬達14(見第2圖)的轉矩電流、或是用以驅動修整器預處理部23之馬達(圖上未繪出)的轉矩電流、或是這兩種轉矩電流值的組合而測量出。另一種作法是,可設置修整器垂直位置感測器(圖上未繪出),用來在修整期間測量修整器3的垂直位置,使得修整器預處理構件22的切削率可根據該修整器垂直位置感測器的輸出訊號來量測。The cutting rate of the dresser pretreatment member 22 may be by a torque current for driving the motor 14 of the dresser 3 (see Fig. 2) or a motor for driving the trimmer pretreatment portion 23 (not shown) The torque current, or a combination of the two torque current values, is measured. Alternatively, a trimmer vertical position sensor (not shown) may be provided for measuring the vertical position of the dresser 3 during trimming so that the trim rate of the dresser pretreatment member 22 may be based on the dresser The output signal of the vertical position sensor is measured.

在修整器3的預處理程序結束以後,修整器3與修整器預處理部23至少其中一者係朝互相遠離的方向移動,以便在修整器3的下表面與修整器預處理構件22的上表面之間形成間隙,如第7圖所示。之後,使修整器清洗刷25和牢固地固持住鑽石顆粒之金屬層9的下表面接觸。在此狀態下,令清洗液q(例如,純水、化學溶液或是純水、化學溶液及氮氣的混合物)從修整器預處理構件22的清洗液噴射孔24往金屬層9噴出,藉此清洗金屬層9的下表面。採用這種方式,便可從金屬層9的下表面移除諸如稠漿的沈積物。After the pre-processing of the dresser 3 is completed, at least one of the dresser 3 and the dresser pre-treating portion 23 is moved away from each other so as to be on the lower surface of the dresser 3 and the dresser pre-processing member 22. A gap is formed between the surfaces as shown in Fig. 7. Thereafter, the dresser cleaning brush 25 is brought into contact with the lower surface of the metal layer 9 which firmly holds the diamond particles. In this state, the cleaning liquid q (for example, pure water, a chemical solution or a mixture of pure water, a chemical solution, and nitrogen) is ejected from the cleaning liquid injection hole 24 of the dresser pretreatment member 22 to the metal layer 9, whereby The lower surface of the metal layer 9 is cleaned. In this way, deposits such as thick paste can be removed from the lower surface of the metal layer 9.

在完成預處理程序與清洗程序之後,並且當研磨裝置正在研磨基板時,金屬層9的下表面係浸泡在清洗液槽26內的清洗液Q中,如第8圖所示。在此閒置的位置,修整器3係繞著自己的軸心旋轉,同時使金屬層9的下表面接觸到修整器清洗刷25,以使金屬層9的下表面保持濕潤與清潔。修整器3的下表面係因此保持濕潤與清潔。After the pre-treatment and cleaning procedures are completed, and when the polishing apparatus is grinding the substrate, the lower surface of the metal layer 9 is immersed in the cleaning liquid Q in the cleaning liquid tank 26, as shown in FIG. In this idle position, the dresser 3 is rotated about its own axis while the lower surface of the metal layer 9 is brought into contact with the dresser cleaning brush 25 to keep the lower surface of the metal layer 9 wet and clean. The lower surface of the dresser 3 thus remains wet and clean.

業已使用長時間來修整研磨墊4的修整器3,其切削率會降低。當切削率降低到預定程度時,便判斷該修整器3已屆使用壽命,而用新的修整器來更換修整器3。修整器預處理裝置20可用來決定修整器3是否已屆使用壽命。更詳細地說,修整器預處理裝置20可具有修整器使用壽命判斷部,其係根據修整器預處理構件22的切削率來判斷修整器3之使用壽命的終點。要判斷已用來修整研磨墊4的修整器3之使用壽命的終點,係將修整器3置於修整器預處理裝置20上,並且修整修整器預處理構件22。修整器使用壽命判斷部係測量修整器預處理構件22的切削率,並根據所測得的切削率判斷修整器3是否已屆使用壽命。The dresser 3 of the polishing pad 4 has been used for a long time, and the cutting rate thereof is lowered. When the cutting rate is lowered to a predetermined level, it is judged that the dresser 3 has a long service life, and the trimmer 3 is replaced with a new dresser. The dresser pre-treatment device 20 can be used to determine if the dresser 3 has reached the end of its useful life. In more detail, the dresser pretreatment apparatus 20 may have a dresser life determining portion that judges the end point of the service life of the dresser 3 based on the cutting rate of the dresser pretreatment member 22. To determine the end of the service life of the dresser 3 that has been used to trim the polishing pad 4, the dresser 3 is placed on the dresser pretreatment device 20 and the dresser pretreatment member 22 is trimmed. The dresser life determining portion measures the cutting rate of the dresser pre-processing member 22, and judges whether the dresser 3 has reached the service life based on the measured cutting rate.

在由修整器預處理裝置20對新更換的修整器3實施預處理的過程中,用來驅動修整器3之馬達14的轉矩電流會隨著預處理過程的進行而改變。舉例來說,馬達14的轉矩電流會在預處理過程中逐漸降低,直到預處理過程接近完成時才會變成固定值。因此,有可能藉著監測馬達14的轉矩電流,來偵測修整器3的預處理終點。During the pre-treatment of the newly replaced dresser 3 by the dresser pre-treatment device 20, the torque current of the motor 14 used to drive the dresser 3 will change as the pre-treatment progresses. For example, the torque current of the motor 14 will gradually decrease during the pre-processing process until the pre-processing process is near completion. Therefore, it is possible to detect the pre-processing end point of the dresser 3 by monitoring the torque current of the motor 14.

在每次完成一片基板的研磨之後,修整器3便會修整研磨台1上之研磨墊4的上表面。修整時,旋轉中的修整器3會以預定的壓力,對在旋轉中的研磨台1上之研磨墊4的上表面施壓。更詳細地說,如第3圖所示,當修整器3將其修整面施壓頂抗於研磨墊4的上表面時,修整器3係沿著箭頭D所指示之研磨墊4的徑向,繞著中央軸心0重複地擺盪或是擺動。研磨墊4的一個修整程序係藉由在研磨墊4上之旋轉中的修整器3之多次的擺動運動(即重複的擺動運動)來實施。修整後的研磨墊4之輪廓(上表面的形狀)的測量,是藉由測量研磨墊4在多個區域內的預定點a至e的厚度(即上表面的高度)來執行,而該多個區域是沿著研磨墊4上表面上的徑向上排列,如第9圖所示。The finisher 3 trims the upper surface of the polishing pad 4 on the polishing table 1 after each time the polishing of one substrate is completed. At the time of dressing, the rotating dresser 3 presses the upper surface of the polishing pad 4 on the rotating polishing table 1 with a predetermined pressure. In more detail, as shown in FIG. 3, when the dresser 3 presses the trimming surface against the upper surface of the polishing pad 4, the dresser 3 is along the radial direction of the polishing pad 4 indicated by the arrow D. Repeatedly swing or swing around the central axis 0. A dressing procedure of the polishing pad 4 is carried out by a plurality of oscillating motions (i.e., repeated oscillating motions) of the dresser 3 in the rotation on the polishing pad 4. The measurement of the contour (the shape of the upper surface) of the trimmed polishing pad 4 is performed by measuring the thickness of the predetermined points a to e (i.e., the height of the upper surface) of the polishing pad 4 in a plurality of regions, and the The regions are arranged along the radial direction on the upper surface of the polishing pad 4 as shown in Fig. 9.

如果欲於修整器3之單次的擺動運動中依序測量研磨墊4在a至e五點處的厚度,則需要高速的資料處理。因此,需要能實施此種高速資料處理的昂貴資料處理器。故於本實施例中,於每次修整程序中僅測量a至e其中一點的研磨墊4之厚度。換言之,在每一次修整器3實施一個修整程序的時候,僅測量多個區域當中的一個之一個預定點的研磨墊4的厚度。舉例來說,在第一次修整過程時測量a點的研磨墊4之厚度、在第二次修整過程時測量b點、在第三次修整過程時測量c點、在第四次修整過程時測量d點、在第五次修整過程時測量e點。採用這種方式,在多次修整過程(本例中,為用於a至e點之五次修整過程)後,測量出研磨墊4在a至e各點的研磨墊4之厚度。為了防止雜訊對測量的不良影響,研磨墊4在a至e各點的厚度會被測量多次,並計算a至e各點之測量值的平均。此經計算得到之平均值便使用做為研磨墊4在各點的厚度。舉例來說,在第9圖中,研磨墊4在a點的厚度被測量多次,而多次測量值的平均便當作是a點處的厚度。研磨墊4在b點的厚度被測量多次,而多次測量值的平均便當作是b點處的厚度。研磨墊4在c至e點的厚度也是以相同方法測量。If the thickness of the polishing pad 4 at five points a to e is to be sequentially measured in a single oscillating motion of the dresser 3, high-speed data processing is required. Therefore, there is a need for an expensive data processor capable of implementing such high speed data processing. Therefore, in the present embodiment, only the thickness of the polishing pad 4 of one of a to e is measured in each trimming process. In other words, when each dresser 3 performs a trimming process, only the thickness of the polishing pad 4 of one of the plurality of regions is measured. For example, measuring the thickness of the polishing pad 4 at point a during the first trimming process, measuring point b during the second trimming process, measuring point c during the third trimming process, and during the fourth trimming process Measure d point and measure point e during the fifth trimming process. In this manner, after a plurality of dressing processes (in this example, five dressing processes for points a to e), the thickness of the polishing pad 4 of the polishing pad 4 at each of points a to e is measured. In order to prevent the adverse effects of noise on the measurement, the thickness of the polishing pad 4 at each point a to e is measured a plurality of times, and the average of the measured values of the points a to e is calculated. This calculated average value is used as the thickness of the polishing pad 4 at each point. For example, in Figure 9, the thickness of the polishing pad 4 at point a is measured multiple times, and the average of multiple measurements is taken as the thickness at point a. The thickness of the polishing pad 4 at point b is measured multiple times, and the average of multiple measurements is taken as the thickness at point b. The thickness of the polishing pad 4 at points c to e is also measured in the same manner.

如上所述,重複測量研磨墊4的厚度,直到獲得多個區域中所有預定點之厚度的量測值。因此,在研磨多塊基板並多次修整研磨墊4之後,便可由量測值中測得(或決定)研磨墊4的輪廓。重複此組測量步驟數次,便可由厚度的測量結果計算出平均輪廓。最後得到的平均輪廓係作為研磨墊4的輪廓,並反映在研磨配方(recipe)。在第9圖的例子裡,於研磨五塊基板並且修整研磨墊4五次以後,測量出點a至e處之研磨墊4的厚度,從而得到研磨墊4的一個輪廓。重複此組步驟三次(即研磨基板十五次),以將由量測結果計算出之平均輪廓用作為研磨墊4的輪廓並反映在研磨配方中。As described above, the thickness of the polishing pad 4 is repeatedly measured until a measurement value of the thicknesses of all the predetermined points in the plurality of regions is obtained. Therefore, after grinding a plurality of substrates and trimming the polishing pad 4 a plurality of times, the contour of the polishing pad 4 can be measured (or determined) from the measured values. Repeat this set of measurement steps several times to calculate the average profile from the thickness measurements. The resulting average profile is taken as the contour of the polishing pad 4 and is reflected in the grinding recipe. In the example of Fig. 9, after the five substrates were ground and the polishing pad 4 was trimmed five times, the thickness of the polishing pad 4 at points a to e was measured, thereby obtaining a profile of the polishing pad 4. This set of steps was repeated three times (i.e., the substrate was ground fifteen times) to use the average profile calculated from the measurement results as the outline of the polishing pad 4 and reflected in the abrasive formulation.

第10圖是根據本發明實施例之基板研磨裝置的示意圖。研磨墊4的修整過程實施如下。研磨台1以箭頭A指示的方向旋轉,而修整器3以箭頭C指示的方向旋轉。修整器3係以預定的力量,對於附著在研磨台1上表面的研磨墊4之上表面來施壓。在此狀態下,修整器3係藉由修整器手臂2的搖擺移動(參看第3圖)而沿著箭頭D指示之研磨墊4的徑向作往復運動(reciprocated),藉此修整研磨墊4。研磨墊4的上表面係分割成沿著研磨墊4的徑向配置的環狀區域Z1至Z7。在修整過程中,當修整器3在區域Z1至Z7的中心部分上之際的位置係藉由供應到馬達29(其為位置控制馬達或是脈衝馬達)的脈衝數而偵測出來,從而測得區域Z1至Z7之中心部分的研磨墊4厚度。修整器3在研磨墊4上表面的徑向位置可藉由供應到馬達29的脈衝數而被精確地偵測。第10圖中的符號T1至T7分別表示各個區域Z1至Z7之中心部分之研磨墊4的厚度的量測值。Fig. 10 is a schematic view of a substrate polishing apparatus according to an embodiment of the present invention. The finishing process of the polishing pad 4 is carried out as follows. The polishing table 1 is rotated in the direction indicated by the arrow A, and the dresser 3 is rotated in the direction indicated by the arrow C. The dresser 3 applies pressure to the upper surface of the polishing pad 4 attached to the upper surface of the polishing table 1 with a predetermined force. In this state, the dresser 3 reciprocates the radial direction of the polishing pad 4 indicated by the arrow D by the rocking movement of the dresser arm 2 (see FIG. 3), thereby trimming the polishing pad 4 . The upper surface of the polishing pad 4 is divided into annular regions Z1 to Z7 disposed along the radial direction of the polishing pad 4. During the trimming process, the position of the dresser 3 on the central portion of the zones Z1 to Z7 is detected by the number of pulses supplied to the motor 29 (which is a position control motor or a pulse motor), thereby measuring The thickness of the polishing pad 4 in the central portion of the regions Z1 to Z7 is obtained. The radial position of the dresser 3 on the upper surface of the polishing pad 4 can be accurately detected by the number of pulses supplied to the motor 29. Symbols T1 to T7 in Fig. 10 indicate the measured values of the thicknesses of the polishing pads 4 in the central portions of the respective regions Z1 to Z7, respectively.

研磨墊4的修整輪廓是從研磨墊4在區域Z1至Z7中之厚度的測量值T1至T7所測出。輪廓係回授給修整器操作控制器,並且反映在修整條件(例如修整器3向研磨墊4施加的壓力、修整器3在研磨墊4上表面的徑向移動速度、以及修整器3的轉速)中。如此便可得到研磨墊4之理想的修整輪廓。The trim profile of the polishing pad 4 is measured from the measured values T1 to T7 of the thickness of the polishing pad 4 in the regions Z1 to Z7. The contour is fed back to the trimmer operation controller and is reflected in the trim conditions (eg, the pressure applied by the dresser 3 to the polishing pad 4, the radial movement speed of the dresser 3 on the upper surface of the polishing pad 4, and the rotational speed of the dresser 3) )in. This results in an ideal trim profile of the polishing pad 4.

元件符號30表示頂環,其係組構成用其下表面固持基板W,並且以箭頭G所指示的方向繞著旋轉軸(未繪出)來旋轉基板W。此頂環30在其下方的周邊上具有扣環(retainer ring)32。在扣環32內設置有壓力腔M1至M4。此等壓力腔M1至M4是由薄膜(membrane)41所形成。此薄膜41的下表面是做為用以支持基板W的支持表面。藉由調整壓力腔M1至M4中的壓力,透過接觸到壓力腔的基板W而向研磨墊4所施加的壓力便可得到控制。The symbol 30 denotes a top ring which is configured to hold the substrate W with its lower surface and rotate the substrate W around a rotation axis (not shown) in a direction indicated by an arrow G. This top ring 30 has a retainer ring 32 on its lower periphery. Pressure chambers M1 to M4 are provided in the buckle 32. These pressure chambers M1 to M4 are formed by a membrane 41. The lower surface of this film 41 is a support surface for supporting the substrate W. By adjusting the pressure in the pressure chambers M1 to M4, the pressure applied to the polishing pad 4 through the substrate W contacting the pressure chamber can be controlled.

壓力控制器是分別設置在和各壓力腔M1至M4流體連通的流體管道中。根據代表研磨墊4在區域Z1至Z7之厚度的測量值T1至T7,來控制這些壓力控制器,以調整由薄膜41所形成的壓力腔M1至M4內的壓力。藉由這些操作,壓力腔M1至M4可根據研磨墊4的厚度而提供一壓力分佈。如此可實現基板W上之薄膜的適當的研磨輪廓(或去除輪廓),而不被研磨墊4之修整輪廓影響。在一例中,對應於具有較小之研磨墊4厚度測量值的區域(部位)之壓力腔中之壓力係選擇性地調整成高於對應於具有較大測量值之區域(部位)之其它壓力腔的壓力,使得基板W上之薄膜的研磨率(去除率)可在其整個表面上表現得平均。然而,本發明並不限於此種壓力調整方式。基本上,係實施回授控制,使得各區域的施壓力依照研磨墊4的輪廓調整,以便得到所需的研磨輪廓。當連續對基板進行研磨時,研磨墊的輪廓會隨時間而改變,故此種研磨墊輪廓的改變也可納入施壓力控制之變數的考量中。The pressure controllers are respectively disposed in fluid conduits in fluid communication with the respective pressure chambers M1 to M4. These pressure controllers are controlled in accordance with the measured values T1 to T7 representing the thickness of the polishing pad 4 in the regions Z1 to Z7 to adjust the pressure in the pressure chambers M1 to M4 formed by the film 41. By these operations, the pressure chambers M1 to M4 can provide a pressure distribution according to the thickness of the polishing pad 4. This allows an appropriate grinding profile (or profile removal) of the film on the substrate W to be achieved without being affected by the trim profile of the polishing pad 4. In one example, the pressure in the pressure chamber corresponding to the region (site) having the smaller thickness measurement of the polishing pad 4 is selectively adjusted to be higher than the other pressure corresponding to the region (site) having a larger measurement value. The pressure of the cavity allows the polishing rate (removal rate) of the film on the substrate W to be averaged over the entire surface thereof. However, the invention is not limited to this type of pressure adjustment. Basically, the feedback control is implemented such that the pressing force of each zone is adjusted in accordance with the contour of the polishing pad 4 to obtain the desired grinding profile. When the substrate is continuously ground, the profile of the polishing pad changes over time, so changes in the profile of the polishing pad can also be incorporated into the variables of the pressure control.

對應到具有較小之研磨墊4厚度測量值的區域(部位)之壓力腔係被選擇性地調整成高於對應到具有較大之測量值之區域(部位)其它壓力腔的壓力。再者,研磨墊4的修整輪廓會回授給修整器操作控制器,以獲得理想的研磨墊4之修整輪廓。根據所得到的理想之研磨墊4的修整輪廓,來調整壓力腔M1至M4內的壓力。因此,可實現基板W上之薄膜之更適當的研磨輪廓。The pressure chamber corresponding to the region (site) having the smaller thickness measurement of the polishing pad 4 is selectively adjusted to be higher than the pressure corresponding to the other pressure chambers of the region (site) having the larger measurement value. Furthermore, the trim profile of the polishing pad 4 is fed back to the trimmer operating controller to achieve the desired trim profile of the polishing pad 4. The pressure in the pressure chambers M1 to M4 is adjusted in accordance with the resulting trim profile of the polishing pad 4. Therefore, a more appropriate polishing profile of the film on the substrate W can be achieved.

第11圖是顯示根據本發明實施例之基板研磨裝置中所使用之頂環的示意結構的垂直剖面圖。頂環30具有:頂環本體31,其係呈圓筒容器狀;以及扣環32,係固定在頂環本體31的下端部分。在頂環本體31內設置有環狀的壓力片33。該壓力片33插在頂環本體31以及壓力片支撐構件34之間,並由頂環本體31內部周圍的下表面來支撐著。頂環驅動軸35係配置於頂環本體31上表面的中央處上。頂環本體31與頂環驅動軸35透過萬向接頭36連接在一起。該萬向接頭36包括:球面軸承機構,其具有軸承滾珠37能讓頂環本體31與頂環驅動軸35可相對於彼此傾斜;以及沒有畫出來的旋轉傳動機構,係將頂環驅動軸35的旋轉傳動到頂環本體31。頂環本體31可相對於頂環驅動軸35來作傾斜,並且接收頂環驅動軸35的旋轉而作轉動。Figure 11 is a vertical sectional view showing a schematic structure of a top ring used in a substrate polishing apparatus according to an embodiment of the present invention. The top ring 30 has a top ring body 31 which is in the shape of a cylindrical container, and a buckle 32 which is fixed to a lower end portion of the top ring body 31. An annular pressure piece 33 is provided in the top ring body 31. The pressure piece 33 is interposed between the top ring body 31 and the pressure piece supporting member 34, and is supported by the lower surface around the inside of the top ring body 31. The top ring drive shaft 35 is disposed at the center of the upper surface of the top ring body 31. The top ring body 31 and the top ring drive shaft 35 are coupled together through a universal joint 36. The universal joint 36 includes: a spherical bearing mechanism having bearing balls 37 for tilting the top ring body 31 and the top ring drive shaft 35 relative to each other; and a rotary transmission mechanism not shown, the top ring drive shaft 35 The rotation is transmitted to the top ring body 31. The top ring body 31 is tiltable relative to the top ring drive shaft 35 and receives rotation of the top ring drive shaft 35 for rotation.

在由頂環本體31與扣環32界定的內部空間中,有碟形的夾盤(chucking plate)38。夾盤38藉由夾盤固持構件39被固持在壓力片33的下表面上。頂環本體31、壓力片33以及夾盤38界定出夾盤38上的壓力腔M5。壓力片33是由諸如橡膠的彈性材料構成。隨著壓力腔M5內之壓力的上升或下降,夾盤38也會隨之下降或上升。夾盤38的下表面係做為用來固持住基板W的固持表面。In the inner space defined by the top ring body 31 and the buckle 32, there is a dish-shaped chucking plate 38. The chuck 38 is held on the lower surface of the pressure piece 33 by the chuck holding member 39. The top ring body 31, the pressure piece 33 and the chuck 38 define a pressure chamber M5 on the chuck 38. The pressure piece 33 is composed of an elastic material such as rubber. As the pressure within the pressure chamber M5 rises or falls, the chuck 38 also drops or rises. The lower surface of the chuck 38 serves as a holding surface for holding the substrate W.

環狀薄膜41a、41b、41c與41d係配置在夾盤38的下表面上。薄膜41a的上緣係插進夾盤38與環狀薄膜固持件51之間,使得薄膜41a安裝在夾盤38下表面的中央部分。薄膜41b的上緣係插進夾盤38與環狀薄膜固持件51之間,使得薄膜41b安裝在夾盤38下表面上。此薄膜41b配置在薄膜41a的周圍。薄膜41c與41d的上緣係插進夾盤38與環狀薄膜固持件52之間,使得薄膜41c與41d安裝在夾盤38下表面的外圍部分上。薄膜41c配置在薄膜41b的周圍,而薄膜41d配置在薄膜41c的周圍。壓力腔M1、M2、M3與M4是由薄膜41a、41b、41c與41d、基板W以及夾盤38所形成。The annular films 41a, 41b, 41c, and 41d are disposed on the lower surface of the chuck 38. The upper edge of the film 41a is inserted between the chuck 38 and the annular film holder 51 such that the film 41a is mounted on the central portion of the lower surface of the chuck 38. The upper edge of the film 41b is inserted between the chuck 38 and the annular film holder 51 such that the film 41b is mounted on the lower surface of the chuck 38. This film 41b is disposed around the film 41a. The upper edges of the films 41c and 41d are inserted between the chuck 38 and the annular film holder 52 such that the films 41c and 41d are mounted on the peripheral portion of the lower surface of the chuck 38. The film 41c is disposed around the film 41b, and the film 41d is disposed around the film 41c. The pressure chambers M1, M2, M3, and M4 are formed by the films 41a, 41b, 41c, and 41d, the substrate W, and the chuck 38.

流體管道42、43、44、45分別連接到壓力腔M1、M2、M3、M4。此等流體管道42、43、44、45係經由壓力控制器P1、P2、P3、P4與壓縮空氣源48流體連通。流體管道46連接到壓力腔M5,並且此流體管道46亦經由壓力控制器P5連接到壓縮空氣源48。第11圖中的符號S1、S2、S3、S4代表感測器,每個感測器是用來測量流經每個流體管道42、43、44、45的流體(壓縮空氣)的速度、壓力與流量。Fluid conduits 42, 43, 44, 45 are connected to pressure chambers M1, M2, M3, M4, respectively. These fluid conduits 42, 43, 44, 45 are in fluid communication with a source of compressed air 48 via pressure controllers P1, P2, P3, P4. The fluid conduit 46 is connected to the pressure chamber M5 and this fluid conduit 46 is also connected to the compressed air source 48 via a pressure controller P5. Symbols S1, S2, S3, S4 in Fig. 11 represent sensors, each of which is used to measure the velocity and pressure of a fluid (compressed air) flowing through each of the fluid conduits 42, 43, 44, 45. With traffic.

在上述的頂環30中,係操作壓力控制器P5以控制要從壓縮空氣源48經由流體管道46供應至壓力腔M5的氣壓,以便控制基板W整個表面上之頂抗研磨墊4的上表面的施壓力。此外,係操作壓力控制器P1、P2、P3、P4以控制要從壓縮空氣源48通過流體管道42、43、44、45而供應至壓力腔M1、M2、M3、M4的氣壓,以便控制位於壓力腔M1、M2、M3、M4下方之基板W之區域(部位)上的施壓力。In the above top ring 30, the pressure controller P5 is operated to control the air pressure to be supplied from the compressed air source 48 to the pressure chamber M5 via the fluid conduit 46 to control the upper surface of the top anti-polishing pad 4 on the entire surface of the substrate W. Apply pressure. In addition, the pressure controllers P1, P2, P3, P4 are operated to control the air pressure to be supplied from the compressed air source 48 through the fluid conduits 42, 43, 44, 45 to the pressure chambers M1, M2, M3, M4 so that the control is located The pressure applied to the region (portion) of the substrate W under the pressure chambers M1, M2, M3, M4.

流經流體管道42、43、44、45的流體(壓縮空氣)之速度、壓力與流量係被感測器S1、S2、S3、S4所測量,且此等測量值D1係被送達控制器50。數種型式之資料D2(包括研磨基板W所需之研磨輪廓與所量測的研磨墊輪廓)係儲存在控制器50內。該控制器50被組構成,從資料D2與測量資料D1計算出在研磨基板W的期間要在壓力腔M1、M2、M3、M4內建立的壓力,以達到目標研磨輪廓。再者,控制器50也被組構成用來計算要供應至壓力腔之壓縮空氣的速度、壓力與流量,並對壓力控制器P1、P2、P3、P4、P5發出控制訊號CS1、CS2、CS3、CS4、CS5,以便藉由控制器P1、P2、P3、P4、P5來控制要供應至壓力腔M1、M2、M3、M4、M5之壓縮空氣的速度、壓力與流量。The velocity, pressure and flow rate of the fluid (compressed air) flowing through the fluid conduits 42, 43, 44, 45 are measured by the sensors S1, S2, S3, S4, and these measured values D1 are sent to the controller 50. . Several types of data D2 (including the abrasive profile required to polish the substrate W and the measured polishing pad profile) are stored in the controller 50. The controller 50 is configured to calculate the pressure to be established in the pressure chambers M1, M2, M3, M4 during the polishing of the substrate W from the data D2 and the measurement data D1 to achieve the target polishing profile. Furthermore, the controller 50 is also configured to calculate the speed, pressure and flow rate of the compressed air to be supplied to the pressure chamber, and to send control signals CS1, CS2, CS3 to the pressure controllers P1, P2, P3, P4, P5. , CS4, CS5, in order to control the speed, pressure and flow rate of the compressed air to be supplied to the pressure chambers M1, M2, M3, M4, M5 by the controllers P1, P2, P3, P4, P5.

第12圖是顯示在基板的研磨過程中,用來反應如上述量測到之研磨墊修整輪廓的流程圖。將基板上之薄膜所需的研磨輪廓輸入到控制器50(步驟ST1)。之後實施研磨墊4的修整(步驟ST2)。在各區域處測量研磨墊4的厚度,以得到(也就是測量到)研磨墊4的厚度輪廓(步驟ST3)。在另一方面,實施基板W的研磨(步驟ST4),並測量基板W上之薄膜的研磨率,而得到研磨輪廓資料(步驟ST5)。Figure 12 is a flow chart showing the polishing profile of the polishing pad as measured above during the polishing of the substrate. The grinding profile required for the film on the substrate is input to the controller 50 (step ST1). Thereafter, the polishing of the polishing pad 4 is performed (step ST2). The thickness of the polishing pad 4 is measured at each region to obtain (i.e., measure) the thickness profile of the polishing pad 4 (step ST3). On the other hand, the polishing of the substrate W is carried out (step ST4), and the polishing rate of the film on the substrate W is measured to obtain the polishing profile data (step ST5).

比較在步驟ST3得到的研磨墊4厚度輪廓與理想的研磨墊4厚度輪廓,以及比較在步驟ST5得到的研磨輪廓與理想的研磨輪廓(步驟ST6)。接下來,由步驟ST6的比較結果判斷出得到的輪廓與理想輪廓之間的差異是否在預定值的範圍內。當該差異位於預定值之內(即「YES」),便結束流程。另一方面,當差異超出了預定值(即「NO」),便進行用來改變修整條件與研磨條件的計算(步驟ST8)。The thickness profile of the polishing pad 4 obtained in step ST3 is compared with the ideal thickness profile of the polishing pad 4, and the polishing profile obtained in step ST5 is compared with the ideal polishing profile (step ST6). Next, it is judged from the comparison result of step ST6 whether or not the difference between the obtained contour and the ideal contour is within the range of the predetermined value. When the difference is within the predetermined value (ie "YES"), the process ends. On the other hand, when the difference exceeds the predetermined value (i.e., "NO"), calculation for changing the trimming condition and the grinding condition is performed (step ST8).

根據上述的計算結果來改變修整條件(例如,修整器3施加於研磨墊4上表面各區域Z1至Z7的施壓力、修整器3的轉速、修整器3沿著箭頭D指示方向上的移動速度)(步驟ST9),並且實施基板的研磨。採用這種方式,將修整條件的改變回授給修整器操作控制器。此外,根據上述的計算結果來改變研磨的條件(例如,壓力腔M1至M4內的壓力)(步驟ST10),並實施基板的研磨。採用這種方式,將研磨條件的改變回授給用來控制頂環30的操作之頂環操作控制器。The trimming conditions are changed according to the above calculation results (for example, the application pressure of the trimmer 3 applied to the respective regions Z1 to Z7 of the upper surface of the polishing pad 4, the rotational speed of the dresser 3, and the moving speed of the dresser 3 in the direction indicated by the arrow D (Step ST9), and polishing of the substrate is performed. In this way, changes in the conditioning conditions are fed back to the trimmer operating controller. Further, the conditions of the polishing (for example, the pressures in the pressure chambers M1 to M4) are changed in accordance with the above calculation results (step ST10), and the polishing of the substrate is performed. In this manner, changes in the grinding conditions are fed back to the top ring operating controller used to control the operation of the top ring 30.

儘管只有展示本發明特定的較佳實施例,應了解的是可對其進行多種變化與修改,而不背離所附申請專利範圍的範疇。Although only a particular preferred embodiment of the invention has been shown, it is understood that various changes and modifications may be made without departing from the scope of the appended claims.

1...研磨台1. . . Grinding table

1a...支撐軸1a. . . Support shaft

2...修整器手臂2. . . Dresser arm

3...修整器3. . . Dresser

4...研磨墊4. . . Abrasive pad

5...液體供應噴嘴5. . . Liquid supply nozzle

6...擺動機構6. . . Swing mechanism

6-1、6-2...齒輪6-1, 6-2. . . gear

7...馬達7. . . motor

8...修整器軸心8. . . Dresser axis

9...金屬層9. . . Metal layer

10...渦電流感測器10. . . Eddy current sensor

11...旋轉連接器11. . . Rotary connector

12...控制器12. . . Controller

13...顯示單元13. . . Display unit

14...馬達14. . . motor

15...動力傳輸機構15. . . Power transmission mechanism

16...升降缸16. . . Lifting cylinder

17...研磨墊厚度偵測監視器17. . . Abrasive pad thickness detection monitor

18...導線18. . . wire

20...修整器預處理裝置20. . . Dresser pretreatment device

21...基座twenty one. . . Pedestal

22...修整器預處理構件twenty two. . . Dresser pretreatment component

23...修整器預處理部twenty three. . . Dresser pre-processing department

24...清洗液噴射孔twenty four. . . Cleaning fluid injection hole

25...修整器清洗刷25. . . Dresser cleaning brush

26...清洗液槽26. . . Cleaning tank

27...支撐軸27. . . Support shaft

28...密封機構28. . . Sealing mechanism

29...馬達29. . . motor

30...頂環30. . . Top ring

31...頂環本體31. . . Top ring body

32...扣環32. . . Buckle

33...壓力片33. . . Pressure film

34...壓力片支撐構件34. . . Pressure piece support member

35...頂環驅動軸35. . . Top ring drive shaft

36...萬向接頭36. . . Universal joint

37...軸承滾珠37. . . Bearing ball

38...夾盤38. . . Chuck

39...夾盤固持構件39. . . Chuck holding member

41...薄膜41. . . film

41a、41b、41c、41d...環狀薄膜41a, 41b, 41c, 41d. . . Ring film

42、43、44、45、46...流體管道42, 43, 44, 45, 46. . . Fluid pipeline

48...壓縮空氣源48. . . Compressed air source

50...控制器50. . . Controller

52...環狀薄膜固持件52. . . Ring film holder

100...研磨墊100. . . Abrasive pad

102...研磨102. . . Grinding

104...頂環104. . . Top ring

106...噴嘴106. . . nozzle

108...修整器108. . . Dresser

A、B、C、D、E、F、G...箭頭A, B, C, D, E, F, G. . . arrow

a、b、c、d、e...預定點a, b, c, d, e. . . Reservation point

CS1、CS2、CS3、CS4、CS5...控制訊號CS1, CS2, CS3, CS4, CS5. . . Control signal

D1、D2...測量值D1, D2. . . Measurements

M1、M2、M3、M4、M5...壓力腔M1, M2, M3, M4, M5. . . Pressure chamber

P1、P2、P3、P4、P5...壓力控制器P1, P2, P3, P4, P5. . . pressure controller

Q...清洗液Q. . . Cleaning fluid

S1、S2、S3、S4...感測器S1, S2, S3, S4. . . Sensor

T1、T2、T3、T4、T5、T6、T7...厚度測量值T1, T2, T3, T4, T5, T6, T7. . . Thickness measurement

W...基板W. . . Substrate

Z1、Z2、Z3、Z4、Z5、Z6、Z7...環狀區域Z1, Z2, Z3, Z4, Z5, Z6, Z7. . . Annular zone

第1圖係顯示具有傳統式修整裝置的研磨裝置之例子;Figure 1 is an example showing a grinding device having a conventional dressing device;

第2圖的示意剖面圖是顯示根據本發明的實施例之具有修整裝置的研磨裝置的例子;2 is a schematic cross-sectional view showing an example of a polishing apparatus having a finishing device according to an embodiment of the present invention;

第3圖是根據本發明的實施例之具有修整裝置之研磨裝置的示意俯視圖;Figure 3 is a schematic plan view of a polishing apparatus having a finishing device in accordance with an embodiment of the present invention;

第4A圖的示意側視圖是顯示根據本發明的實施例之修整裝置之修整器預處理裝置的例子;4A is a schematic side view showing an example of a dresser pretreatment apparatus for a dressing apparatus according to an embodiment of the present invention;

第4B圖是修整器預處理裝置的示意俯視圖;Figure 4B is a schematic plan view of the dresser pretreatment device;

第5圖是顯示根據本發明的實施例之在一般狀態下的修整器預處理裝置的剖面圖;Figure 5 is a cross-sectional view showing a dresser pretreatment apparatus in a general state according to an embodiment of the present invention;

第6圖是顯示根據本發明的實施例之當預處理修整器時之修整器預處理裝置的剖面圖;Figure 6 is a cross-sectional view showing the dresser pretreatment apparatus when the dresser is pretreated according to an embodiment of the present invention;

第7圖是顯示根據本發明的實施例之當清洗修整器時之修整器預處理裝置的剖面圖;Figure 7 is a cross-sectional view showing the dresser pretreatment apparatus when the trimmer is cleaned according to an embodiment of the present invention;

第8圖是顯示根據本發明的實施例之在等待狀態下之修整器預處理裝置的剖面圖;Figure 8 is a cross-sectional view showing a dresser pre-processing apparatus in a waiting state according to an embodiment of the present invention;

第9圖的俯視圖是顯示根據本發明的實施例之藉由修整裝置來測量研磨墊輪廓的過程;The top view of Fig. 9 is a view showing the process of measuring the profile of the polishing pad by the dressing device according to an embodiment of the present invention;

第10圖是根據本發明實施例之基板研磨裝置的示意圖;Figure 10 is a schematic view of a substrate polishing apparatus according to an embodiment of the present invention;

第11圖的垂直剖面圖是顯示根據本發明的實施例之用於基板研磨裝置之頂環的示意結構;以及11 is a vertical sectional view showing a schematic structure of a top ring for a substrate polishing apparatus according to an embodiment of the present invention;

第12圖是顯示基板研磨過程中反映研磨墊之修整輪廓的流程圖。Figure 12 is a flow chart showing the trimming profile of the polishing pad during the substrate polishing process.

1...研磨台1. . . Grinding table

3...修整器3. . . Dresser

4...研磨墊4. . . Abrasive pad

30...頂環30. . . Top ring

32...扣環32. . . Buckle

41...薄膜41. . . film

A、C、D、G...箭頭A, C, D, G. . . arrow

M1、M2、M3、M4...壓力腔M1, M2, M3, M4. . . Pressure chamber

T1、T2、T3、T4、T5、T6、T7...厚度測量值T1, T2, T3, T4, T5, T6, T7. . . Thickness measurement

W...基板W. . . Substrate

Z1、Z2、Z3、Z4、Z5、Z6、Z7...環狀區域Z1, Z2, Z3, Z4, Z5, Z6, Z7. . . Annular zone

Claims (2)

一種研磨墊之輪廓量測方法,係使修整器抵接於研磨台上的研磨墊而在預定的修整條件下對研磨墊進行修整,並測量所修整的研磨墊之輪廓,該方法係:前述修整器係朝前述研磨墊的徑向在前述研磨墊之上表面上進行擺動,並以藉由複數次之擺動運動所進行的修整來進行一個程序的修整;將前述研磨墊於徑向分為多個區域,藉由前述修整器的一次之擺動運動所進行的修整來測量前述多個區域的其中一者中之預定點處的研磨墊上表面的高度,並藉由前述修整器的下一次之擺動運動所進行的修整來測量不同區域中之預定點處的研磨墊上表面的高度,依此方式依序藉由前述修整器的擺動運動所進行的修整來測量於上次不同之區域中之預定點處的研磨墊上表面的高度,而在經過由前述一個程序的修整的複數次之擺動運動所進行的修整而測量所有區域中之預定點處的研磨墊上表面的高度,並從其測量結果得到前述研磨墊的輪廓。 A method for measuring the profile of a polishing pad, wherein the dresser abuts the polishing pad on the polishing table to trim the polishing pad under predetermined finishing conditions, and measures the contour of the polished polishing pad, the method is as follows: The dresser oscillates on the upper surface of the polishing pad in the radial direction of the polishing pad, and performs trimming of the program by trimming by a plurality of oscillating motions; dividing the aforementioned polishing pad into a radial direction a plurality of regions, wherein the height of the upper surface of the polishing pad at a predetermined point of one of the plurality of regions is measured by trimming performed by the one-time swinging motion of the trimmer, and by the next time of the trimmer The trimming performed by the oscillating motion measures the height of the upper surface of the polishing pad at a predetermined point in different regions, and in this way, the trimming by the oscillating motion of the trimmer is sequentially measured to measure the predetermined time in the different region. The height of the upper surface of the polishing pad at the point, and the measurement in all areas is measured by the trimming performed by the plurality of trimming movements of the trimming process described above. The polishing pad at the height of the surface point, and the profile obtained from a measurement result of the polishing pad. 如申請專利範圍第1項的輪廓量測方法,其中,係經過複數個程序的研磨而對前述個區域中之預定點處的研磨墊上表面的高度進行複數次之測量,並以其平均值做為該預定點處之研磨墊上表面之高度,而得到前述研磨墊的輪廓。The method for measuring a profile according to claim 1, wherein the height of the upper surface of the polishing pad at a predetermined point in the foregoing region is measured by a plurality of processes, and the average value is used. The height of the upper surface of the polishing pad at the predetermined point is obtained to obtain the contour of the aforementioned polishing pad.
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