JP4649948B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4649948B2 JP4649948B2 JP2004308433A JP2004308433A JP4649948B2 JP 4649948 B2 JP4649948 B2 JP 4649948B2 JP 2004308433 A JP2004308433 A JP 2004308433A JP 2004308433 A JP2004308433 A JP 2004308433A JP 4649948 B2 JP4649948 B2 JP 4649948B2
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- semiconductor element
- electrode
- substrate
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- power semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
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- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図1は、参考例1の半導体装置の側面図である。
図6は、参考例2の半導体装置40を示した図である。
図9は、実施の形態1の半導体装置100の断面を示した図である。
Claims (4)
- 平板状の半導体素子と、
前記半導体素子の第1の主面に接続される第1の部材とを備え、
前記半導体素子と前記第1の部材とは、複数の接続部分において接合され、
前記第1の主面における前記複数の接続部分の間の部分は、前記第1の部材とは非接触に支持され、
前記半導体素子の第1の主面と前記第1の部材との間に介在して前記半導体素子と前記第1の部材とをろう付けする複数に分割されたろう付け合金部をさらに備え、
前記ろう付け合金部は、前記第1の部材と前記半導体素子とを電気的に接続するはんだ部を含み、
前記複数に分割されたろう付け合金部の各々は、
前記はんだ部の周囲を取り囲む前記はんだ部よりも融点の高い包囲部を含む、半導体装置。 - 前記第1の主面上の前記第1の部材への接合面と前記第1の部材の前記第1の主面への接合面とのいずれか一方には、前記複数の接続部分にそれぞれ対応する複数の接続突起が形成されている、請求項1に記載の半導体装置。
- 前記複数の接続突起は、前記半導体素子の前記第1の主面に形成される、請求項2に記載の半導体装置。
- 前記第1の部材は前記半導体素子に電気的に接続されている電極であり、
前記複数の接続突起は、前記電極の表面に形成されている、請求項2に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308433A JP4649948B2 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308433A JP4649948B2 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006120933A JP2006120933A (ja) | 2006-05-11 |
JP4649948B2 true JP4649948B2 (ja) | 2011-03-16 |
Family
ID=36538514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004308433A Expired - Fee Related JP4649948B2 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置 |
Country Status (1)
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JP (1) | JP4649948B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5010208B2 (ja) * | 2006-08-17 | 2012-08-29 | 三菱重工業株式会社 | 半導体素子モジュール及びその製造方法 |
JP5241177B2 (ja) * | 2007-09-05 | 2013-07-17 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
US8222724B2 (en) | 2008-02-14 | 2012-07-17 | Mitsubishi Heavy Industries, Ltd. | Semiconductor element module and method for manufacturing the same |
DE112012005921B4 (de) | 2012-02-22 | 2021-04-29 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349207A (ja) * | 1999-06-02 | 2000-12-15 | Denso Corp | 半導体装置の実装構造及び実装方法 |
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2004
- 2004-10-22 JP JP2004308433A patent/JP4649948B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349207A (ja) * | 1999-06-02 | 2000-12-15 | Denso Corp | 半導体装置の実装構造及び実装方法 |
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JP2006120933A (ja) | 2006-05-11 |
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