JP2006120933A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006120933A JP2006120933A JP2004308433A JP2004308433A JP2006120933A JP 2006120933 A JP2006120933 A JP 2006120933A JP 2004308433 A JP2004308433 A JP 2004308433A JP 2004308433 A JP2004308433 A JP 2004308433A JP 2006120933 A JP2006120933 A JP 2006120933A
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2924/1306—Field-effect transistor [FET]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
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- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】 平面電極2とパワー半導体素子4の電極12とは、はんだ層22によって多点で接続される。同様にパワー半導体素子4の電極14とDBA基板のパターン電極18とは、はんだ層24によって多点で接続される。同じくパターン電極20とヒートシンクベース板8とははんだ層26によって多点で接続される。簡単な構成でまた、大面積のはんだ接合を行わないので温度変化時の応力が緩和され、はんだ層にクラックが入ることを避けることができる。
【選択図】 図1
Description
図1は、実施の形態1の半導体装置の側面図である。
図6は、実施の形態2の半導体装置40を示した図である。
図9は、実施の形態3の半導体装置100の断面を示した図である。
Claims (7)
- 平板状の半導体素子と、
前記半導体素子の第1の主面に接続される第1の部材とを備え、
前記半導体素子と前記第1の部材とは、複数の接続部分において接合され、
前記第1の主面における前記複数の接続部分の間の部分は、前記第1の部材とは非接触に支持される、半導体装置。 - 前記第1の主面上の前記第1の部材への接合面と前記第1の部材の前記第1の主面への接合面とのいずれか一方には、前記複数の接続部分にそれぞれ対応する複数の接続突起が形成されている、請求項1に記載の半導体装置。
- 前記複数の接続突起は、前記半導体素子の前記第1の主面に形成される、請求項2に記載の半導体装置。
- 前記第1の部材は前記半導体素子に電気的に接続されている電極であり、
前記複数の接続突起は、前記電極表面に形成されている、請求項2に記載の半導体装置。 - 前記半導体素子の第1の主面と前記第1の部材との間に介在して前記半導体素子と前記第1の部材とをろう付けする複数に分割されたろう付け合金部をさらに備える、請求項1に記載の半導体装置。
- 前記ろう付け合金部は、前記第1の部材と前記半導体素子とを電気的に接続するはんだ部を含む、請求項5に記載の半導体装置。
- 前記複数に分割されたろう付け合金部の各々は、
前記はんだ部の周囲を取り囲む前記はんだ部よりも融点の高い包囲部を含む、請求項6に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004308433A JP4649948B2 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2004308433A JP4649948B2 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2006120933A true JP2006120933A (ja) | 2006-05-11 |
JP4649948B2 JP4649948B2 (ja) | 2011-03-16 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004308433A Expired - Fee Related JP4649948B2 (ja) | 2004-10-22 | 2004-10-22 | 半導体装置 |
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JP (1) | JP4649948B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008047736A (ja) * | 2006-08-17 | 2008-02-28 | Mitsubishi Heavy Ind Ltd | 半導体素子モジュール及びその製造方法 |
JP2009064852A (ja) * | 2007-09-05 | 2009-03-26 | Okutekku:Kk | 半導体装置及び半導体装置の製造方法 |
US8222724B2 (en) | 2008-02-14 | 2012-07-17 | Mitsubishi Heavy Industries, Ltd. | Semiconductor element module and method for manufacturing the same |
WO2013124989A1 (ja) * | 2012-02-22 | 2013-08-29 | 三菱電機株式会社 | 半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349207A (ja) * | 1999-06-02 | 2000-12-15 | Denso Corp | 半導体装置の実装構造及び実装方法 |
-
2004
- 2004-10-22 JP JP2004308433A patent/JP4649948B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349207A (ja) * | 1999-06-02 | 2000-12-15 | Denso Corp | 半導体装置の実装構造及び実装方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008047736A (ja) * | 2006-08-17 | 2008-02-28 | Mitsubishi Heavy Ind Ltd | 半導体素子モジュール及びその製造方法 |
TWI395307B (zh) * | 2006-08-17 | 2013-05-01 | Mitsubishi Heavy Ind Ltd | Semiconductor element module and manufacturing method thereof |
JP2009064852A (ja) * | 2007-09-05 | 2009-03-26 | Okutekku:Kk | 半導体装置及び半導体装置の製造方法 |
US8222724B2 (en) | 2008-02-14 | 2012-07-17 | Mitsubishi Heavy Industries, Ltd. | Semiconductor element module and method for manufacturing the same |
WO2013124989A1 (ja) * | 2012-02-22 | 2013-08-29 | 三菱電機株式会社 | 半導体装置 |
JPWO2013124989A1 (ja) * | 2012-02-22 | 2015-05-21 | 三菱電機株式会社 | 半導体装置 |
US9306046B2 (en) | 2012-02-22 | 2016-04-05 | Mitsubishi Electric Corporation | Semiconductor device having a semiconductor element and a terminal connected to the semiconductor element |
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Publication number | Publication date |
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JP4649948B2 (ja) | 2011-03-16 |
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