JP4642634B2 - 音響センサの製造方法 - Google Patents

音響センサの製造方法 Download PDF

Info

Publication number
JP4642634B2
JP4642634B2 JP2005316594A JP2005316594A JP4642634B2 JP 4642634 B2 JP4642634 B2 JP 4642634B2 JP 2005316594 A JP2005316594 A JP 2005316594A JP 2005316594 A JP2005316594 A JP 2005316594A JP 4642634 B2 JP4642634 B2 JP 4642634B2
Authority
JP
Japan
Prior art keywords
circuit board
acoustic sensor
metal
manufacturing
metal cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005316594A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007124500A5 (enrdf_load_stackoverflow
JP2007124500A (ja
Inventor
浩一 吉田
徹 山田
英樹 小島
勝浩 巻幡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2005316594A priority Critical patent/JP4642634B2/ja
Publication of JP2007124500A publication Critical patent/JP2007124500A/ja
Publication of JP2007124500A5 publication Critical patent/JP2007124500A5/ja
Application granted granted Critical
Publication of JP4642634B2 publication Critical patent/JP4642634B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13062Junction field-effect transistor [JFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Details Of Audible-Bandwidth Transducers (AREA)
JP2005316594A 2005-10-31 2005-10-31 音響センサの製造方法 Expired - Fee Related JP4642634B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005316594A JP4642634B2 (ja) 2005-10-31 2005-10-31 音響センサの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005316594A JP4642634B2 (ja) 2005-10-31 2005-10-31 音響センサの製造方法

Publications (3)

Publication Number Publication Date
JP2007124500A JP2007124500A (ja) 2007-05-17
JP2007124500A5 JP2007124500A5 (enrdf_load_stackoverflow) 2010-01-14
JP4642634B2 true JP4642634B2 (ja) 2011-03-02

Family

ID=38147807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005316594A Expired - Fee Related JP4642634B2 (ja) 2005-10-31 2005-10-31 音響センサの製造方法

Country Status (1)

Country Link
JP (1) JP4642634B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101008399B1 (ko) * 2007-09-03 2011-01-14 주식회사 비에스이 내벽을 금속성 혹은 전도성 물질로 감싼 세라믹 패키지를이용한 콘덴서 마이크로폰
CN101237719B (zh) * 2007-12-28 2012-05-23 深圳市豪恩电声科技有限公司 一种硅电容式麦克风及其制作方法
JP6650154B2 (ja) * 2016-03-28 2020-02-19 国立大学法人東北大学 圧力センサ
CN111422825B (zh) * 2020-06-11 2020-09-22 潍坊歌尔微电子有限公司 传感器的制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129042A (en) * 1977-11-18 1978-12-12 Signetics Corporation Semiconductor transducer packaged assembly
JPH05259478A (ja) * 1992-03-12 1993-10-08 Fuji Electric Co Ltd 半導体圧力センサの製造方法
JP3374620B2 (ja) * 1995-10-25 2003-02-10 松下電工株式会社 半導体圧力センサ
JPH11287723A (ja) * 1998-04-01 1999-10-19 Yazaki Corp 半導体圧力センサ
JP2001054196A (ja) * 1999-08-11 2001-02-23 Kyocera Corp エレクトレットコンデンサマイクロホン
US7166910B2 (en) * 2000-11-28 2007-01-23 Knowles Electronics Llc Miniature silicon condenser microphone
JP2002359445A (ja) * 2001-03-22 2002-12-13 Matsushita Electric Ind Co Ltd レーザー加工用の誘電体基板およびその加工方法ならび半導体パッケージおよびその製作方法
US6781231B2 (en) * 2002-09-10 2004-08-24 Knowles Electronics Llc Microelectromechanical system package with environmental and interference shield
DE10303263B4 (de) * 2003-01-28 2012-01-05 Infineon Technologies Ag Mikrophonanordnung
JP2004254138A (ja) * 2003-02-20 2004-09-09 Sanyo Electric Co Ltd コンデンサマイクロホン
JP2005150652A (ja) * 2003-11-20 2005-06-09 Aoi Electronics Co Ltd 回路基板
JP4419563B2 (ja) * 2003-12-25 2010-02-24 パナソニック株式会社 エレクトレットコンデンサー
JP2005262353A (ja) * 2004-03-17 2005-09-29 Sony Corp 電子部品および電子部品の製造方法
SG131039A1 (en) * 2005-09-14 2007-04-26 Bse Co Ltd Condenser microphone and packaging method for the same

Also Published As

Publication number Publication date
JP2007124500A (ja) 2007-05-17

Similar Documents

Publication Publication Date Title
CN103097282B (zh) 被配置成用于电气连接到印刷电路板上的气腔封装体以及其提供方法
JP5763682B2 (ja) Mems及びasicを備える小型化した電気的デバイス及びその製造方法
EP1755360B1 (en) Silicon based condenser microphone and packaging method for the same
JP4058642B2 (ja) 半導体装置
JP4532827B2 (ja) 小型シリコンコンデンサマイクロフォンおよびその製造方法
JP5197421B2 (ja) カメラモジュール
CN103125019A (zh) 被配置成用于电气连接到印刷电路板上的半导体封装体以及其提供方法
US20070158826A1 (en) Semiconductor device
JP4655017B2 (ja) 音響センサ
JP2007180201A (ja) 半導体装置
TWI533715B (zh) Packaging Method of Stacked Micro - Electromechanical Microphone
JP2008271425A (ja) 音響センサおよびその製造方法
KR100722689B1 (ko) 부가적인 백 챔버를 갖는 실리콘 콘덴서 마이크로폰
KR101411666B1 (ko) 실리콘 마이크로폰 패키지 및 그 제조방법
CN104811889B (zh) 一种mems麦克风封装器件的组装方法
US10277983B2 (en) Microphone device
US8311247B2 (en) Piezoelectric body module and manufacturing method therefor
TW201808025A (zh) 麥克風封裝結構
JP6580356B2 (ja) 単一指向性memsマイクロホン
JP4642634B2 (ja) 音響センサの製造方法
JP2007150514A (ja) マイクロホンパッケージ
JP2007199049A (ja) 半導体装置
US9309108B2 (en) MEMS microphone packaging method
JP2007071821A (ja) 半導体装置
JP2005057645A (ja) エレクトレットコンデンサマイクロホン

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20071113

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071120

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080812

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091119

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20091119

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20091210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091215

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100210

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100309

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100601

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20100617

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101005

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101018

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101102

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101201

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees