JP4642634B2 - Manufacturing method of acoustic sensor - Google Patents

Manufacturing method of acoustic sensor Download PDF

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Publication number
JP4642634B2
JP4642634B2 JP2005316594A JP2005316594A JP4642634B2 JP 4642634 B2 JP4642634 B2 JP 4642634B2 JP 2005316594 A JP2005316594 A JP 2005316594A JP 2005316594 A JP2005316594 A JP 2005316594A JP 4642634 B2 JP4642634 B2 JP 4642634B2
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circuit board
acoustic sensor
metal
step
manufacturing method
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JP2007124500A (en
JP2007124500A5 (en
Inventor
浩一 吉田
英樹 小島
徹 山田
勝浩 巻幡
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パナソニック株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13062Junction field-effect transistor [JFET]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Description

The present invention relates to a method for manufacturing an acoustic sensor .

An acoustic sensor (electret condenser microphone: ECM) having a mechanical structure, which is formed by incorporating a diaphragm ring in a casing (capsule) having a special structure, is described in Patent Document 1, for example.
JP-A-11-266499

  An acoustic sensor (microphone) having a mechanical structure of a type in which components are incorporated into a casing (an assembly type) is manufactured by assembling each individual component individually, and thus the manufacturing process is complicated.

  In addition, since the tension of the vibration ring fluctuates due to heat, there are many manufacturing restrictions such that high-temperature processing cannot be performed. For example, a sealing (package) structure using soldering or the like cannot be employed.

  Therefore, there is a limit to mass production of an acoustic sensor (microphone) having an assembly type mechanical structure.

  The present invention has been made in view of the above circumstances, and an object thereof is to dramatically increase the production efficiency of an acoustic sensor and realize further mass production of a high-performance acoustic sensor.

The present invention provides a first step of mounting an electroacoustic transducer and an electronic circuit component on a circuit board via a resin-based bonding material, and a metal tray having a positioning hole, in the positioning hole. A second step of disposing a metal cap , and engaging the metal tray with the mounting surface of the circuit board so as to cover the electroacoustic transducer and the electronic circuit component, thereby An acoustic sensor manufacturing method comprising: a third step of contacting the circuit board; and a fourth step of dividing and individualizing the circuit board after the third step, wherein the electroacoustic transducer is The vibration electrode and the fixed electrode are provided, and one of the vibration electrode and the fixed electrode is connected to a ground terminal.

Electroacoustic transducers (silicon microphones), which are chip components with diaphragms formed by processing silicon substrates using silicon micromachining technology (MEMS technology (microelectromechanical system technology)), are environmentally resistant. Excellent in handling and handling, and high heat treatment is possible. Focusing on this point, an electroacoustic transducer (silicon microphone) formed using silicon semiconductor manufacturing technology is mounted on a circuit board together with other electronic components (FET, capacitor, etc.) and covered with a metal cap. Both are connected by solder to constitute a so-called metal can sealing package. Since the acoustic sensor can be manufactured not through the conventional mechanical assembly but through the same process as the mounting of the LSI, the manufacturing efficiency is dramatically improved. In addition, since a metal (metal) is used as a cap (package material) and sealing is performed by soldering, a sealing structure (package structure) that is resistant to vibration and excellent in moisture resistance can be obtained. Further, a metal can sealing technique that is generally used as a package of an optical element, a high-frequency transistor, or the like can be used.
Further, since the metal cap serves to efficiently dissipate the heat during soldering to the outside, it is possible to effectively prevent deterioration of the elements inside the sealing body due to the high heat during soldering. Further, since the metal cap functions as an electromagnetic shield, it is possible to obtain a noise suppressing effect.

  In the acoustic sensor of the present invention, the electronic circuit component includes a chip component formed by a semiconductor manufacturing technique.

  A chip component manufactured by a semiconductor manufacturing technique is employed as an electronic component (for example, a JFET or a capacitor as an amplifying element) mounted on a circuit board together with an electroacoustic transducer (silicon microphone). Therefore, even if a high heat treatment is performed at the time of soldering, the element characteristics are not deteriorated.

  In the present invention, the metal cap includes an upper wall that faces the circuit board, a side wall that is connected to the upper wall and extends in the vertical direction, and a fin that protrudes in the horizontal direction from the side wall. And having the shape of a sheep and the back surface of the sheep being soldered to the circuit board.

  As the shape of the metal cap, a shape having a shape suitable for soldering is employed. The back surface of the Hisashi comes into contact with the mounting surface of the circuit board via the solder. This makes it possible to perform good soldering.

  Further, the acoustic sensor manufacturing method of the present invention is an acoustic sensor manufacturing method sealed with a metal cap, the first step of mounting the electroacoustic transducer and the electronic circuit component on the circuit board, A metal tray having a positioning hole for positioning the metal tray is prepared, and the metal cap having a protrusion protruding in a horizontal direction from a side wall is placed in the positioning hole of the metal tray, and the back surface of the hook is on the upper side. A second step of placing the circuit board so as to be exposed; a third step of supplying a solder paste to the back surface of the sheep; a fourth step of engaging the circuit board with the metal tray with the mounting surface facing down; In a state where the circuit board is engaged with the metal tray, a fifth step of performing heat treatment and reflowing the solder, the soldered and integrated circuit board, and A sixth step of removing the metal cap from the metal tray and dividing the circuit board into individual parts.

  Mount an electroacoustic transducer (silicon microphone) and electronic components on the circuit board, and prepare a metal tray with a positioning hole, and place a metal cap in the positioning hole so that the back side of the Hoshi is exposed on the upper side. Place solder, supply solder to the back of the hiss, engage the circuit board, and perform solder reflow by, for example, a reflow furnace to form a metal can package, and finally divide the circuit board, The sensor is individualized. A large number of silicon microphones and electronic components are collectively mounted on a circuit board. On the other hand, a metal tray having positioning holes is used to position a large number of metal caps at a time. In order to connect a large number of metal caps to a circuit board by reflow, and to individually separate them after reflow, a large number of acoustic sensors are manufactured efficiently (batch processing). )Is possible. Moreover, since not only an electroacoustic transducer (silicon microphone) but also electronic components such as an amplifier can be mounted at the same time, a small and high-performance acoustic sensor can be manufactured. In addition, since the metal tray is placed in a reflow furnace and heat-treated at the time of soldering, heat is applied efficiently and evenly, and solder failure due to temperature variations or variations in solder joint strength can be prevented. In addition, the metal cap serves to efficiently dissipate heat during soldering to the metal tray (that is, to function as a heat dissipating cap). Degradation can also be effectively prevented. According to the method for manufacturing an acoustic sensor of the present invention, it is possible to dramatically increase the manufacturing efficiency of the acoustic sensor and realize large-scale mass production of a high-performance acoustic sensor.

  In the acoustic sensor of the present invention, a metal can sealing package by soldering is employed, focusing on the good environmental resistance and handling properties of the silicon microphone. Therefore, the acoustic sensor can be manufactured through the same process as the mounting of the LSI, and the manufacturing efficiency is dramatically improved.

  In addition, since a metal is used as the cap (package material) and sealing is performed by soldering, a sealing structure (package structure) that is resistant to vibration and excellent in moisture resistance can be obtained.

  Further, a metal can sealing technique that is generally used as a package of an optical element, a high-frequency transistor, or the like can be used.

  Further, since the metal cap serves to efficiently dissipate the heat during soldering to the outside, it is possible to effectively prevent deterioration of the elements inside the sealing body due to the high heat during soldering.

  Further, since the metal cap functions as an electromagnetic shield, it is possible to obtain a noise suppressing effect.

  In addition, as electronic components (for example, JFETs and capacitors as amplifying elements) mounted on a circuit board together with electroacoustic transducers (silicon microphones), chip components manufactured by semiconductor manufacturing technology are used for soldering. Even if a high heat treatment is sometimes performed, there is no concern that the device characteristics deteriorate.

  Also, as the shape of the metal cap, the shape of the cap has a scissors part suitable for soldering, and the back surface of the scissors is brought into surface contact with the mounting surface of the circuit board through the solder, thereby achieving good soldering. Realized. Therefore, a package structure with excellent environmental resistance can be obtained.

  Also, according to the acoustic sensor manufacturing method of the present invention, a large number of silicon microphones and electronic components are collectively mounted on a circuit board, while a large number of metal caps are collectively stacked using a metal tray having positioning holes. After the solder supply, the circuit board and the metal cap are aligned and engaged, and by reflow, a large number of metal caps are connected to the circuit board at once, and then individualized. It is possible to efficiently and collectively manufacture (batch process) the sensors. Therefore, manufacturing efficiency is dramatically improved, and large-scale mass production of high-performance acoustic sensors is possible.

  Moreover, since not only an electroacoustic transducer (silicon microphone) but also electronic components such as an amplifier can be mounted at the same time, a small and high-performance acoustic sensor can be manufactured.

  In addition, since the metal tray is placed in a reflow furnace and heat-treated at the time of soldering, heat is applied efficiently and evenly, and solder failure due to temperature variations or variations in solder joint strength can be prevented.

  In addition, the metal cap serves to efficiently dissipate heat during soldering to the metal tray (that is, to function as a heat dissipating cap). Degradation can be effectively prevented and manufacturing safety is ensured.

  Therefore, according to the present invention, it is possible to dramatically increase the production efficiency of the acoustic sensor and realize further mass production of the high-performance acoustic sensor.

Next, embodiments of the present invention will be described with reference to the drawings.
(First embodiment)

  FIG. 1 is a plan view for explaining an outline (relative positional relationship between a metal cap and each semiconductor chip component) of the sealing structure of the acoustic sensor of the present invention.

  The acoustic sensor 200 of the present invention is manufactured by using a metal cap (metal can: shown surrounded by a dotted line in the drawing) and a silicon semiconductor manufacturing technology (MEMS processing technology and CMOS manufacturing technology). An acoustic transducer (also referred to as a silicon microphone) is formed with an electret condenser microphone (ECM) 102 using an electretized silicon oxide film as a diaphragm and a junction field effect transistor (JFET) as an amplifying element. And a semiconductor chip (electronic circuit component) 107 on which a capacitive element is formed.

  The semiconductor chips 104 and 107 are also manufactured by a silicon semiconductor manufacturing technique. The electroacoustic transducer 102 and the semiconductor chips 104 and 107 are mounted on a circuit board (not shown in FIG. 1) via, for example, a resin-based bonding material. The electroacoustic transducer 102 and the semiconductor chip 104 are electrically connected to each other through a bonding wire and a wiring layer formed on the circuit board. The semiconductor chip 104 and the semiconductor chip 107 are electrically connected to each other by a wiring layer formed on the circuit board. However, in the figure, the bonding wire and the wiring layer are not shown.

  2 is a view for explaining the cross-sectional structure of the acoustic sensor shown in FIG. 1 and the characteristics of the shape of the metal cap. FIG. 2A is a cross-sectional view taken along the line AA of the acoustic sensor of FIG. (B) is sectional drawing of a metal cap.

  As shown in FIG. 2A, on the circuit board 90, the electroacoustic transducer 102 and the semiconductor chip 104 are fixed by resin-based bonding materials 106a and 106b. In addition, the electroacoustic transducer 102 and the semiconductor chip 104 are connected by a bonding wire. Note that the wiring layer formed on the circuit board 90 is not shown.

  A metal cap 100 is provided so as to cover the electroacoustic transducer 102 and the semiconductor chip 104. The metal cap 100 is connected and fixed to the circuit board 90 by soldering.

  As shown in FIG. 2B, the metal cap 100 includes an upper wall (X) facing the mounting surface of the circuit board 90 and a side wall connected to the upper wall (X) and extending in the vertical direction. (Y) and a sheep shape (Z) protruding horizontally from the side wall (Y) (projecting) are provided. Then, the back surface of the paddle (Z) is in contact with the mounting surface of the circuit board 90 via the solder. The soldering of the metal cap 100 to the circuit board 90 will be described later.

  In addition, a sound hole for allowing sound waves to pass is formed in a part of the upper wall of the metal cap 100. In the drawing, the description of the sound holes is omitted (this is the same in FIGS. 6 to 11).

  In addition, the metal cap 100 functions as an electromagnetic shield, produces an effect of reducing noise of the microphone, and also functions as a heat dissipation cap that radiates heat applied in the manufacturing process to the outside. Will be protected from heat (this will be described later).

  FIG. 3 is a circuit diagram showing a circuit configuration of the acoustic sensor shown in FIG. 3, the same parts as those in FIG. 1 (and FIG. 2) are denoted by the same reference numerals.

  As illustrated, one pole of the electroacoustic transducer (ECM) 102 is connected to the ground terminal (GND), and the other pole is connected to the gate of the semiconductor chip 104 with the gate protection diode (D).

  A capacitor element 107 for stabilizing the output is formed between the source and drain of the semiconductor chip (JFET). In the figure, R1 is an input resistor for applying a DC bias from the input terminal (IN), and C1 is a coupling capacitor for taking out an output signal (AC signal) from the output terminal (OUT).

  Next, the structure of the electroacoustic transducer (ECM) 102 will be described with reference to FIGS.

  FIG. 4 is a plan view of a device for explaining the structure of an electroacoustic transducer (ECM) used in the present invention.

  In FIG. 4, reference numeral 10 indicates a low-resistance silicon member. A plurality of sound holes 11 formed by processing silicon are formed at the center of the silicon member 10.

  FIG. 5 is a cross-sectional view of the electroacoustic transducer (ECM) along the line AA in FIG.

  As shown in the drawing, a silicon oxide film 7 serving as an electret on which a permanent charge is formed is formed on a silicon substrate 6. The silicon substrate 6 is provided with an opening for forming a part of the silicon oxide film 7 as a vibration film, and thereby a part of the lower surface of the silicon oxide film 7 is exposed. Further, an insulating film 9 is formed on the upper surface of the silicon oxide film 7.

  A conductive film 8 made of gold is formed on the lower surfaces of the silicon oxide film 7 and the silicon substrate 6. The laminated film of the insulating film 9, the silicon oxide film 7 and the conductive film 8 constitutes a vibration film.

  A low-resistance silicon member 10 is disposed above the insulating film 9 via a bonding layer 12 made of gold. The bonding layer 12 is formed above the silicon substrate 6, that is, in a region excluding the vibration film portion. In addition, a large number of through holes 11 are provided in the silicon member 10 above the vibrating membrane portion.

  The conductive film 8 formed on the lower surface of the silicon oxide film 7 serves as a vibrating electrode of an electret capacitor (ECM), while the low resistance silicon member 10 serves as a fixed electrode of the ECM.

  The electroacoustic transducer (ECM) 102 having such a structure and configured using silicon microfabrication technology (MEMS technology (microelectromechanical system technology)) is compared with a conventional assembly type electroacoustic transducer. In addition, it is structurally robust, has excellent environmental resistance and handling properties, and is heat resistant and capable of high heat treatment. Therefore, it is possible to employ a sealing structure (metal can sealing) by soldering using a metal cap.

  That is, in the present invention, focusing on the excellent characteristics of the electroacoustic transducer (ECM) manufactured by silicon manufacturing technology, the electroacoustic transducer (ECM) is replaced with other electronic components (FET or capacitor). Etc.) are mounted on a circuit board, covered with a metal cap, and connected to each other by solder to form a so-called metal can sealing package. Therefore, since the acoustic sensor can be manufactured not through the conventional mechanical assembly but through the same process as the mounting of the LSI, the manufacturing efficiency is greatly improved.

  Hereinafter, with reference to FIGS. 6-11, the manufacturing method of the acoustic sensor of this invention is demonstrated. 6 to 11 are cross-sectional views of the device in each step for explaining the method of manufacturing the acoustic sensor of the present invention. In each figure, the same reference numerals are given to portions common to the above-mentioned figures.

  In the first step shown in FIG. 6, the electroacoustic transducers (102a, 102b) formed by the semiconductor manufacturing process and the electronic circuit components (104a, 104b) formed by the semiconductor manufacturing process are transferred to the circuit board 90. It is mounted on the resin-based bonding material (106a, 106b: for example, epoxy resin).

In the second step shown in FIG. 7, the electroacoustic transducers (102a, 102b) and the electronic circuit components (104a, 104b) are electrically connected via bonding wires (110a, 110b) and mounted. Connection is also made by a wiring layer (not shown) provided on the surface.
The electronic circuit components (104a, 104b) and the circuit board 90 are connected to each other by a wiring layer (not shown) formed on the mounting surface.

  In the third step shown in FIG. 8, the metal caps (106 a, 106 b) having a scissors shape (see FIG. 2B) are arranged on the metal tray 120 with the back surface of the scissors (Z) facing upward. As shown in the drawing, positioning holes (hereinafter referred to as positioning holes) 302a and 302b are formed in the metal tray 120, and the metal caps 100a and 100b are formed in the metal tray by the positioning holes 302 and 302b. Positioned at 120 predetermined positions.

  In the fourth step shown in FIG. 9, the solder paste 122 is supplied to the back surface of the eagles (Z).

  In the fifth step shown in FIG. 10, the circuit board 90 is engaged on the metal tray 120 with the mounting surface facing downward, and the circuit board 90 is engaged on the metal tray 120. Then, heat treatment is performed to mount the reflow of the solder paste 122, whereby the metal caps (100a, 100b) are fixed to the mounting surface of the circuit board 90.

  During the solder reflow process, the metal tray 120, the metal caps 100a and 100b, and the circuit board 90 are heated evenly and efficiently inside the reflow furnace. Therefore, temperature variations when mounting the metal caps 100a and 100b are performed. Does not cause solder failure or variation in solder joint strength. Therefore, a highly reliable package structure can be obtained.

  In addition, during the solder reflow process, the metal caps 100 a and 100 b function as heat dissipation caps and radiate heat to the metal tray 120. Accordingly, the electroacoustic transducers (102a, 102b) and the electronic circuit components (104a, 104b) are protected from heat, and the element characteristics are not deteriorated.

  Then, in the sixth step shown in FIG. 11, the circuit board 90 on which the metal caps 100a and 100b are mounted is removed from the metal tray 120, and then the circuit board 90 is individually divided. Thereby, the acoustic sensor 200 is completed.

  In this way, when mounting the metal cap having the shape of the scissors through the solder, the plurality of metal caps are arranged on the metal tray with the back surface of the scissors facing upward, the solder paste is supplied to the scissors portion, and then According to the manufacturing method of this embodiment, after the circuit board is engaged with the metal tray with the mounting surface facing downward, the solder is reflowed in the state of being engaged with the metal tray. Therefore, it is possible to manufacture (batch processing) collectively. In addition, in mounting the metal cap, there is no solder failure or solder joint strength variation due to temperature variations. Therefore, large-scale mass production of a highly reliable acoustic sensor using an electroacoustic transducer made of a semiconductor chip is possible.

  In the present invention, solder reflow is used to form a package, but the present invention is not limited to this, and other conductive materials can also be used.

  As described above, in the acoustic sensor according to the present invention, a metal can sealing package by soldering is employed by paying attention to the good environmental resistance and handling property of the silicon microphone. Therefore, the acoustic sensor can be manufactured through the same process as the mounting of the LSI, and the manufacturing efficiency is dramatically improved.

  In addition, since a metal is used as the cap (package material) and sealing is performed by soldering, a sealing structure (package structure) that is resistant to vibration and excellent in moisture resistance can be obtained.

  Further, a metal can sealing technique that is generally used as a package of an optical element, a high-frequency transistor, or the like can be used.

  Further, since the metal cap serves to efficiently dissipate the heat during soldering to the outside, it is possible to effectively prevent deterioration of the elements inside the sealing body due to the high heat during soldering.

  Further, since the metal cap functions as an electromagnetic shield, it is possible to obtain a noise suppressing effect.

  In addition, as electronic components (for example, JFETs and capacitors as amplifying elements) mounted on a circuit board together with electroacoustic transducers (silicon microphones), chip components manufactured by semiconductor manufacturing technology are used for soldering. Even if a high heat treatment is sometimes performed, there is no concern that the device characteristics deteriorate.

  Also, as the shape of the metal cap, the shape of the cap has a scissors part suitable for soldering, and the back surface of the scissors is brought into surface contact with the mounting surface of the circuit board through the solder, thereby achieving good soldering. Realized. Therefore, a package structure with excellent environmental resistance can be obtained.

  Also, according to the acoustic sensor manufacturing method of the present invention, a large number of silicon microphones and electronic components are collectively mounted on a circuit board, while a large number of metal caps are collectively stacked using a metal tray having positioning holes. After the solder supply, the circuit board and the metal cap are aligned and engaged, and by reflow, a large number of metal caps are connected to the circuit board at once, and then individualized. It is possible to efficiently and collectively manufacture (batch process) the sensors. Therefore, manufacturing efficiency is dramatically improved, and large-scale mass production of high-performance acoustic sensors is possible.

  Moreover, since not only an electroacoustic transducer (silicon microphone) but also electronic components such as an amplifier can be mounted at the same time, a small and high-performance acoustic sensor can be manufactured.

  In addition, since the metal tray is placed in a reflow furnace and heat-treated at the time of soldering, heat is applied efficiently and evenly, and solder failure due to temperature variations or variations in solder joint strength can be prevented.

  In addition, the metal cap serves to efficiently dissipate heat during soldering to the metal tray (that is, to function as a heat dissipating cap). Degradation can be effectively prevented and manufacturing safety is ensured.

  Therefore, according to the present invention, it is possible to dramatically increase the production efficiency of the acoustic sensor and realize large-scale mass production of a high-performance acoustic sensor.

  The present invention has the effect of dramatically increasing the production efficiency of a high-performance acoustic sensor and enabling mass production on a large scale. Therefore, a compact and lightweight acoustic sensor such as an electret condenser microphone (ECM), In addition, it is useful as a production method thereof.

The top view for demonstrating the outline (relative positional relationship of a metal cap and each semiconductor chip component) of the sealing structure of the acoustic sensor of this invention It is a figure for demonstrating the cross-sectional structure of the acoustic sensor shown in FIG. 1, and the characteristic of the shape of a metal cap, (a) is sectional drawing which follows the AA line of the acoustic sensor of FIG. 1, (b) is. Cross section of a metal cap A circuit diagram showing a circuit configuration of the acoustic sensor shown in FIG. Plan view of device for explaining structure of electroacoustic transducer (ECM) used in the present invention Sectional drawing of an electroacoustic transducer (ECM) along the AA line of FIG. Sectional drawing of the device in the 1st process of the manufacturing method of the acoustic sensor of this invention Sectional drawing of the device in the 2nd process of the manufacturing method of the acoustic sensor of this invention Sectional drawing of the device in the 3rd process of the manufacturing method of the acoustic sensor of this invention Sectional drawing of the device in the 4th process of the manufacturing method of the acoustic sensor of this invention Sectional drawing of the device in the 5th process of the manufacturing method of the acoustic sensor of this invention Sectional drawing of the device in the 6th process of the manufacturing method of the acoustic sensor of this invention

Explanation of symbols

6 Silicon substrate 7 Silicon oxide film 9 Insulating film 10 Low resistance silicon member 11 Sound hole 12 Bonding layer 90 Circuit board 100 Metal cap 102 Electroacoustic transducer manufactured by MEMS technology (ECM, silicon microphone)
104 Electronic circuit components (JFET)
107 Capacitance element 106 (106a, 106b) Resin-based bonding material 108 Bonding wire 120 Metal tray 122 Solder paste

Claims (4)

  1. A first step of mounting an electroacoustic transducer and an electronic circuit component on a circuit board via a resin-based bonding material;
    Providing a metal tray having a positioning hole, into the positioning hole, a second step of the metal cap is placed,
    A third step of contacting the metal cap with the circuit board by engaging the metal tray with a mounting surface of the circuit board so as to cover the electroacoustic transducer and the electronic circuit component;
    And a fourth step of dividing and individualizing the circuit board after the third step,
    The electroacoustic transducer has a vibrating electrode and a fixed electrode,
    Either of the said vibration electrode and the said fixed electrode is connected to the grounding terminal, The manufacturing method of the acoustic sensor characterized by the above-mentioned.
  2. It is a manufacturing method of the acoustic sensor according to claim 1,
    An acoustic sensor manufacturing method including a fifth step of performing a heat treatment in a state where the metal cap disposed in the hole is in contact with the circuit board before the fourth step.
  3. It is a manufacturing method of the acoustic sensor according to claim 1 or 2 ,
    In the third step, the metal cap and the circuit board are in contact with each other through solder.
  4. It is a manufacturing method of an acoustic sensor given in any 1 paragraph of Claims 1-3,
    The manufacturing method of the acoustic sensor which has a scissors so that the said metal cap may become in parallel with the said circuit board in the part which contacts the said circuit board.
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KR101008399B1 (en) * 2007-09-03 2011-01-14 주식회사 비에스이 Condenser microphone using the ceramic package whose inside is encompassed by metal or conductive materials
CN101237719B (en) 2007-12-28 2012-05-23 深圳市豪恩电声科技有限公司 A silicon capacitance microphone and its making method

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478991A (en) * 1977-11-18 1979-06-23 Philips Nv Semiconductor transducer assembly
JPH05259478A (en) * 1992-03-12 1993-10-08 Fuji Electric Co Ltd Manufacture of semiconductor pressure sensor
JPH09119875A (en) * 1995-10-25 1997-05-06 Matsushita Electric Works Ltd Semiconductor pressure sensor
JPH11287723A (en) * 1998-04-01 1999-10-19 Yazaki Corp Semiconductor pressure sensor
JP2001054196A (en) * 1999-08-11 2001-02-23 Kyocera Corp Electret condenser microphone
JP2002359445A (en) * 2001-03-22 2002-12-13 Matsushita Electric Ind Co Ltd Dielectric substrate for laser working, working method therefor, semiconductor package and method for manufacturing the same
DE10303263A1 (en) * 2003-01-28 2004-08-05 Infineon Technologies Ag Sensor module contains sealing arrangement that acoustically isolates microphone so that detection is only possible in direction perpendicular to active surface over opening in circuit board
US6781231B2 (en) * 2002-09-10 2004-08-24 Knowles Electronics Llc Microelectromechanical system package with environmental and interference shield
JP2004254138A (en) * 2003-02-20 2004-09-09 Sanyo Electric Co Ltd Capacitor microphone
JP2004537182A (en) * 2000-11-28 2004-12-09 ノウレス エレクトロニクス, リミテッド ライアビリティ カンパニー Small silicon condenser microphone and method of manufacturing the same
JP2005150652A (en) * 2003-11-20 2005-06-09 Aoi Electronics Co Ltd Substrate
JP2005191208A (en) * 2003-12-25 2005-07-14 Matsushita Electric Ind Co Ltd Electret capacitor
JP2005262353A (en) * 2004-03-17 2005-09-29 Sony Corp Electronic part and method of manufacturing electronic part
JP2007082233A (en) * 2005-09-14 2007-03-29 Bse Co Ltd Silicon capacitor microphone and method for packaging same

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478991A (en) * 1977-11-18 1979-06-23 Philips Nv Semiconductor transducer assembly
JPH05259478A (en) * 1992-03-12 1993-10-08 Fuji Electric Co Ltd Manufacture of semiconductor pressure sensor
JPH09119875A (en) * 1995-10-25 1997-05-06 Matsushita Electric Works Ltd Semiconductor pressure sensor
JPH11287723A (en) * 1998-04-01 1999-10-19 Yazaki Corp Semiconductor pressure sensor
JP2001054196A (en) * 1999-08-11 2001-02-23 Kyocera Corp Electret condenser microphone
JP2004537182A (en) * 2000-11-28 2004-12-09 ノウレス エレクトロニクス, リミテッド ライアビリティ カンパニー Small silicon condenser microphone and method of manufacturing the same
JP2002359445A (en) * 2001-03-22 2002-12-13 Matsushita Electric Ind Co Ltd Dielectric substrate for laser working, working method therefor, semiconductor package and method for manufacturing the same
US6781231B2 (en) * 2002-09-10 2004-08-24 Knowles Electronics Llc Microelectromechanical system package with environmental and interference shield
DE10303263A1 (en) * 2003-01-28 2004-08-05 Infineon Technologies Ag Sensor module contains sealing arrangement that acoustically isolates microphone so that detection is only possible in direction perpendicular to active surface over opening in circuit board
JP2004254138A (en) * 2003-02-20 2004-09-09 Sanyo Electric Co Ltd Capacitor microphone
JP2005150652A (en) * 2003-11-20 2005-06-09 Aoi Electronics Co Ltd Substrate
JP2005191208A (en) * 2003-12-25 2005-07-14 Matsushita Electric Ind Co Ltd Electret capacitor
JP2005262353A (en) * 2004-03-17 2005-09-29 Sony Corp Electronic part and method of manufacturing electronic part
JP2007082233A (en) * 2005-09-14 2007-03-29 Bse Co Ltd Silicon capacitor microphone and method for packaging same

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