JP4641259B2 - パワーｍｏｓｆｅｔ - Google Patents

パワーｍｏｓｆｅｔ Download PDF

Info

Publication number
JP4641259B2
JP4641259B2 JP2005501099A JP2005501099A JP4641259B2 JP 4641259 B2 JP4641259 B2 JP 4641259B2 JP 2005501099 A JP2005501099 A JP 2005501099A JP 2005501099 A JP2005501099 A JP 2005501099A JP 4641259 B2 JP4641259 B2 JP 4641259B2
Authority
JP
Japan
Prior art keywords
runners
drain
source
runner
connection layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005501099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006515956A (ja
JP2006515956A5 (https=
Inventor
チョン、シェン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Great Wall Semiconductor Corp
Original Assignee
Great Wall Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Great Wall Semiconductor Corp filed Critical Great Wall Semiconductor Corp
Publication of JP2006515956A publication Critical patent/JP2006515956A/ja
Publication of JP2006515956A5 publication Critical patent/JP2006515956A5/ja
Application granted granted Critical
Publication of JP4641259B2 publication Critical patent/JP4641259B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2005501099A 2002-10-08 2003-10-06 パワーｍｏｓｆｅｔ Expired - Lifetime JP4641259B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41694202P 2002-10-08 2002-10-08
US10/601,121 US6972464B2 (en) 2002-10-08 2003-06-19 Power MOSFET
PCT/US2003/031603 WO2004034432A2 (en) 2002-10-08 2003-10-06 Power mosfet

Publications (3)

Publication Number Publication Date
JP2006515956A JP2006515956A (ja) 2006-06-08
JP2006515956A5 JP2006515956A5 (https=) 2006-12-14
JP4641259B2 true JP4641259B2 (ja) 2011-03-02

Family

ID=32096175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005501099A Expired - Lifetime JP4641259B2 (ja) 2002-10-08 2003-10-06 パワーｍｏｓｆｅｔ

Country Status (5)

Country Link
US (1) US6972464B2 (https=)
JP (1) JP4641259B2 (https=)
KR (1) KR101022867B1 (https=)
AU (1) AU2003284004A1 (https=)
WO (1) WO2004034432A2 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005057626A2 (en) * 2003-12-04 2005-06-23 Great Wall Semiconductor Corporation System and method to reduce metal series resistance of bumped chip
WO2005059957A2 (en) * 2003-12-12 2005-06-30 Great Wall Semiconductor Corporation Metal interconnect system and method for direct die attachment
US7612418B2 (en) 2003-12-12 2009-11-03 Great Wall Semiconductor Corporation Monolithic power semiconductor structures including pairs of integrated devices
US7560808B2 (en) * 2005-10-19 2009-07-14 Texas Instruments Incorporated Chip scale power LDMOS device
US7446375B2 (en) * 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US7385263B2 (en) * 2006-05-02 2008-06-10 Atmel Corporation Low resistance integrated MOS structure
JP4814770B2 (ja) * 2006-12-01 2011-11-16 パナソニック株式会社 半導体集積回路
JP2008218442A (ja) * 2007-02-28 2008-09-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその製造方法
WO2008155085A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Elektrische schaltung mit vertikaler kontaktierung
JP5326151B2 (ja) * 2007-12-26 2013-10-30 セイコーＮｐｃ株式会社 パワーｍｏｓトランジスタ
US8138787B2 (en) * 2008-07-13 2012-03-20 Altera Corporation Apparatus and method for input/output module that optimizes frequency performance in a circuit
US9070670B2 (en) 2009-01-29 2015-06-30 International Rectifier Corporation Electrical connectivity of die to a host substrate
US8648449B2 (en) * 2009-01-29 2014-02-11 International Rectifier Corporation Electrical connectivity for circuit applications
EP2465141B1 (en) 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US8399912B2 (en) 2010-02-16 2013-03-19 International Rectifier Corporation III-nitride power device with solderable front metal
US8692360B1 (en) * 2010-07-06 2014-04-08 International Rectifier Corporation Electrical connectivity for circuit applications
US8581343B1 (en) * 2010-07-06 2013-11-12 International Rectifier Corporation Electrical connectivity for circuit applications
US9006099B2 (en) * 2011-06-08 2015-04-14 Great Wall Semiconductor Corporation Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump
RU2646013C2 (ru) * 2012-03-26 2018-02-28 РАВАЛ Эй.Си.Эс. ЛТД. Паротопливная система и ее компоненты
CN104603955B (zh) * 2012-08-22 2017-04-19 纽索思创新有限公司 形成用于光伏电池的触头的方法
US9972624B2 (en) 2013-08-23 2018-05-15 Qualcomm Incorporated Layout construction for addressing electromigration
US9786663B2 (en) 2013-08-23 2017-10-10 Qualcomm Incorporated Layout construction for addressing electromigration
JP6295065B2 (ja) 2013-11-20 2018-03-14 ルネサスエレクトロニクス株式会社 半導体装置
US9324819B1 (en) 2014-11-26 2016-04-26 Delta Electronics, Inc. Semiconductor device
JP6546995B2 (ja) * 2015-08-21 2019-07-17 日立オートモティブシステムズ株式会社 半導体装置、半導体集積回路、及び負荷駆動装置
TWI748233B (zh) * 2018-08-29 2021-12-01 美商高效電源轉換公司 具有降低導通電阻之橫向功率元件
US11749670B2 (en) * 2020-05-18 2023-09-05 Taiwan Semiconductor Manufacturing Company Limited Power switch for backside power distribution
WO2022244700A1 (ja) * 2021-05-17 2022-11-24 株式会社村田製作所 半導体装置
WO2023272674A1 (en) 2021-07-01 2023-01-05 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based multi-channel switching semiconductor device and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US668338A (en) * 1900-03-13 1901-02-19 Adam H Weaver Tongue-support.
US671044A (en) * 1900-06-27 1901-04-02 Willis G Dodd Air-compressor.
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
JP3405508B2 (ja) * 1997-05-30 2003-05-12 富士通株式会社 半導体集積回路
JP2002016069A (ja) * 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6683380B2 (en) * 2000-07-07 2004-01-27 Texas Instruments Incorporated Integrated circuit with bonding layer over active circuitry
US6710441B2 (en) * 2000-07-13 2004-03-23 Isothermal Research Systems, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
JP2002164437A (ja) * 2000-07-27 2002-06-07 Texas Instruments Inc ボンディングおよび電流配分を分散したパワー集積回路および方法

Also Published As

Publication number Publication date
US20050017299A1 (en) 2005-01-27
WO2004034432A2 (en) 2004-04-22
WO2004034432A9 (en) 2005-11-17
JP2006515956A (ja) 2006-06-08
AU2003284004A8 (en) 2004-05-04
AU2003284004A1 (en) 2004-05-04
KR101022867B1 (ko) 2011-03-16
US6972464B2 (en) 2005-12-06
WO2004034432A3 (en) 2005-04-28
KR20050075351A (ko) 2005-07-20

Similar Documents

Publication Publication Date Title
JP4641259B2 (ja) パワーｍｏｓｆｅｔ
CN1574335B (zh) 具有金刚石形金属互连配置的半导体功率器件
CN100466258C (zh) 半导体器件及其制造方法
US8823101B2 (en) ESD protection semiconductor device having an insulated-gate field-effect transistor
US7265041B2 (en) Gate layouts for transistors
CN101043032B (zh) 半导体器件及其制造方法
JP2009239049A (ja) 半導体装置
US20070196974A1 (en) Semiconductor device including bipolar junction transistor with protected emitter-base junction
US7763939B2 (en) Low on resistance CMOS transistor for integrated circuit applications
JPH05206470A (ja) 絶縁ゲート型電界効果トランジスタ
US11296230B2 (en) Semiconductor integrated circuit device
US7045863B2 (en) Semiconductor device
US20060006474A1 (en) Semiconductor device
JP2004207509A (ja) 半導体装置及びその製造方法
JP2013016708A (ja) 半導体装置及びその製造方法
TWI261924B (en) Semiconductor device and fabrication process thereof
JPH098291A (ja) 半導体装置
US20020008224A1 (en) Semiconductor device
KR100225944B1 (ko) 가변 드레인 전류형 트랜지스터를 갖는 반도체 장치
US6849904B2 (en) Efficient source diffusion interconnect, MOS transistor and standard cell layout utilizing same
TWI892328B (zh) 半導體結構
JPH10173065A (ja) 半導体装置のレイアウト構造およびその形成方法
JP3356147B2 (ja) 半導体集積回路装置
JPH11220124A (ja) 半導体装置
JPH0923006A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061006

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061006

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061026

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100713

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101006

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101109

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101126

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4641259

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term