KR101022867B1 - 파워 ｍｏｓｆｅｔ - Google Patents

파워 ｍｏｓｆｅｔ Download PDF

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Publication number
KR101022867B1
KR101022867B1 KR1020057006029A KR20057006029A KR101022867B1 KR 101022867 B1 KR101022867 B1 KR 101022867B1 KR 1020057006029 A KR1020057006029 A KR 1020057006029A KR 20057006029 A KR20057006029 A KR 20057006029A KR 101022867 B1 KR101022867 B1 KR 101022867B1
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KR
South Korea
Prior art keywords
source
connecting plates
layer
drain
elements
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Expired - Fee Related
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KR1020057006029A
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English (en)
Korean (ko)
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KR20050075351A (ko
Inventor
쉔 쟁
Original Assignee
그레이트 웰 세미컨덕터
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Publication of KR20050075351A publication Critical patent/KR20050075351A/ko
Application granted granted Critical
Publication of KR101022867B1 publication Critical patent/KR101022867B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020057006029A 2002-10-08 2003-10-06 파워 ｍｏｓｆｅｔ Expired - Fee Related KR101022867B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41694202P 2002-10-08 2002-10-08
US60/416,942 2002-10-08
US10/601,121 US6972464B2 (en) 2002-10-08 2003-06-19 Power MOSFET
US10/601,121 2003-06-19

Publications (2)

Publication Number Publication Date
KR20050075351A KR20050075351A (ko) 2005-07-20
KR101022867B1 true KR101022867B1 (ko) 2011-03-16

Family

ID=32096175

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057006029A Expired - Fee Related KR101022867B1 (ko) 2002-10-08 2003-10-06 파워 ｍｏｓｆｅｔ

Country Status (5)

Country Link
US (1) US6972464B2 (https=)
JP (1) JP4641259B2 (https=)
KR (1) KR101022867B1 (https=)
AU (1) AU2003284004A1 (https=)
WO (1) WO2004034432A2 (https=)

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WO2005057626A2 (en) * 2003-12-04 2005-06-23 Great Wall Semiconductor Corporation System and method to reduce metal series resistance of bumped chip
WO2005059957A2 (en) * 2003-12-12 2005-06-30 Great Wall Semiconductor Corporation Metal interconnect system and method for direct die attachment
US7612418B2 (en) 2003-12-12 2009-11-03 Great Wall Semiconductor Corporation Monolithic power semiconductor structures including pairs of integrated devices
US7560808B2 (en) * 2005-10-19 2009-07-14 Texas Instruments Incorporated Chip scale power LDMOS device
US7446375B2 (en) * 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US7385263B2 (en) * 2006-05-02 2008-06-10 Atmel Corporation Low resistance integrated MOS structure
JP4814770B2 (ja) * 2006-12-01 2011-11-16 パナソニック株式会社 半導体集積回路
JP2008218442A (ja) * 2007-02-28 2008-09-18 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその製造方法
WO2008155085A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Elektrische schaltung mit vertikaler kontaktierung
JP5326151B2 (ja) * 2007-12-26 2013-10-30 セイコーＮｐｃ株式会社 パワーｍｏｓトランジスタ
US8138787B2 (en) * 2008-07-13 2012-03-20 Altera Corporation Apparatus and method for input/output module that optimizes frequency performance in a circuit
US9070670B2 (en) 2009-01-29 2015-06-30 International Rectifier Corporation Electrical connectivity of die to a host substrate
US8648449B2 (en) * 2009-01-29 2014-02-11 International Rectifier Corporation Electrical connectivity for circuit applications
EP2465141B1 (en) 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US8399912B2 (en) 2010-02-16 2013-03-19 International Rectifier Corporation III-nitride power device with solderable front metal
US8692360B1 (en) * 2010-07-06 2014-04-08 International Rectifier Corporation Electrical connectivity for circuit applications
US8581343B1 (en) * 2010-07-06 2013-11-12 International Rectifier Corporation Electrical connectivity for circuit applications
US9006099B2 (en) * 2011-06-08 2015-04-14 Great Wall Semiconductor Corporation Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump
RU2646013C2 (ru) * 2012-03-26 2018-02-28 РАВАЛ Эй.Си.Эс. ЛТД. Паротопливная система и ее компоненты
CN104603955B (zh) * 2012-08-22 2017-04-19 纽索思创新有限公司 形成用于光伏电池的触头的方法
US9972624B2 (en) 2013-08-23 2018-05-15 Qualcomm Incorporated Layout construction for addressing electromigration
US9786663B2 (en) 2013-08-23 2017-10-10 Qualcomm Incorporated Layout construction for addressing electromigration
JP6295065B2 (ja) 2013-11-20 2018-03-14 ルネサスエレクトロニクス株式会社 半導体装置
US9324819B1 (en) 2014-11-26 2016-04-26 Delta Electronics, Inc. Semiconductor device
JP6546995B2 (ja) * 2015-08-21 2019-07-17 日立オートモティブシステムズ株式会社 半導体装置、半導体集積回路、及び負荷駆動装置
TWI748233B (zh) * 2018-08-29 2021-12-01 美商高效電源轉換公司 具有降低導通電阻之橫向功率元件
US11749670B2 (en) * 2020-05-18 2023-09-05 Taiwan Semiconductor Manufacturing Company Limited Power switch for backside power distribution
WO2022244700A1 (ja) * 2021-05-17 2022-11-24 株式会社村田製作所 半導体装置
WO2023272674A1 (en) 2021-07-01 2023-01-05 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based multi-channel switching semiconductor device and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US668338A (en) * 1900-03-13 1901-02-19 Adam H Weaver Tongue-support.
US671044A (en) * 1900-06-27 1901-04-02 Willis G Dodd Air-compressor.
US20030036256A1 (en) * 2000-07-07 2003-02-20 Efland Taylor R. Integrated circuit with bonding layer over active circuitry

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
US6150722A (en) * 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
JP3405508B2 (ja) * 1997-05-30 2003-05-12 富士通株式会社 半導体集積回路
JP2002016069A (ja) * 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6710441B2 (en) * 2000-07-13 2004-03-23 Isothermal Research Systems, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
JP2002164437A (ja) * 2000-07-27 2002-06-07 Texas Instruments Inc ボンディングおよび電流配分を分散したパワー集積回路および方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US668338A (en) * 1900-03-13 1901-02-19 Adam H Weaver Tongue-support.
US671044A (en) * 1900-06-27 1901-04-02 Willis G Dodd Air-compressor.
US20030036256A1 (en) * 2000-07-07 2003-02-20 Efland Taylor R. Integrated circuit with bonding layer over active circuitry

Also Published As

Publication number Publication date
US20050017299A1 (en) 2005-01-27
WO2004034432A2 (en) 2004-04-22
WO2004034432A9 (en) 2005-11-17
JP2006515956A (ja) 2006-06-08
AU2003284004A8 (en) 2004-05-04
AU2003284004A1 (en) 2004-05-04
US6972464B2 (en) 2005-12-06
JP4641259B2 (ja) 2011-03-02
WO2004034432A3 (en) 2005-04-28
KR20050075351A (ko) 2005-07-20

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