JP4639571B2 - 窒化物半導体レーザ素子およびその製造方法 - Google Patents

窒化物半導体レーザ素子およびその製造方法 Download PDF

Info

Publication number
JP4639571B2
JP4639571B2 JP2002240433A JP2002240433A JP4639571B2 JP 4639571 B2 JP4639571 B2 JP 4639571B2 JP 2002240433 A JP2002240433 A JP 2002240433A JP 2002240433 A JP2002240433 A JP 2002240433A JP 4639571 B2 JP4639571 B2 JP 4639571B2
Authority
JP
Japan
Prior art keywords
protective film
nitride semiconductor
layer
stripe
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002240433A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003142769A (ja
JP2003142769A5 (enrdf_load_stackoverflow
Inventor
雅彦 佐野
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2002240433A priority Critical patent/JP4639571B2/ja
Publication of JP2003142769A publication Critical patent/JP2003142769A/ja
Publication of JP2003142769A5 publication Critical patent/JP2003142769A5/ja
Application granted granted Critical
Publication of JP4639571B2 publication Critical patent/JP4639571B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
JP2002240433A 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法 Expired - Lifetime JP4639571B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002240433A JP4639571B2 (ja) 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10-34403 1998-02-17
JP3440398 1998-02-17
JP10-104254 1998-04-15
JP10425498 1998-04-15
JP2002240433A JP4639571B2 (ja) 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12654998A Division JP3604278B2 (ja) 1998-02-17 1998-05-11 窒化物半導体レーザー素子

Publications (3)

Publication Number Publication Date
JP2003142769A JP2003142769A (ja) 2003-05-16
JP2003142769A5 JP2003142769A5 (enrdf_load_stackoverflow) 2006-10-19
JP4639571B2 true JP4639571B2 (ja) 2011-02-23

Family

ID=27288410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002240433A Expired - Lifetime JP4639571B2 (ja) 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP4639571B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4850453B2 (ja) 2005-08-11 2012-01-11 ローム株式会社 半導体発光装置の製造方法及び半導体発光装置
JP4091647B2 (ja) 2006-07-21 2008-05-28 三菱電機株式会社 半導体光素子の製造方法
JP4142084B2 (ja) 2006-10-16 2008-08-27 三菱電機株式会社 半導体光素子の製造方法
JP4272239B2 (ja) 2007-03-29 2009-06-03 三菱電機株式会社 半導体光素子の製造方法
JP5347236B2 (ja) 2007-05-08 2013-11-20 三菱電機株式会社 半導体光素子の製造方法
JP2008311434A (ja) 2007-06-14 2008-12-25 Mitsubishi Electric Corp 半導体光素子の製造方法
JP2009212386A (ja) 2008-03-05 2009-09-17 Mitsubishi Electric Corp 半導体光素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3015371B2 (ja) * 1988-01-20 2000-03-06 株式会社東芝 半導体レーザ
JPH04320027A (ja) * 1991-04-18 1992-11-10 Fujitsu Ltd 半導体装置の製造方法
JPH05226767A (ja) * 1992-02-12 1993-09-03 Fujitsu Ltd 埋め込み型半導体レーザおよびその製造方法
JPH09199798A (ja) * 1996-01-18 1997-07-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP3878707B2 (ja) * 1996-02-21 2007-02-07 シャープ株式会社 窒化物系半導体レーザ素子の製造方法
JP3379619B2 (ja) * 1996-02-28 2003-02-24 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3604278B2 (ja) * 1998-02-17 2004-12-22 日亜化学工業株式会社 窒化物半導体レーザー素子

Also Published As

Publication number Publication date
JP2003142769A (ja) 2003-05-16

Similar Documents

Publication Publication Date Title
US7083996B2 (en) Nitride semiconductor device and manufacturing method thereof
JP3791246B2 (ja) 窒化物半導体の成長方法、及びそれを用いた窒化物半導体素子の製造方法、窒化物半導体レーザ素子の製造方法
JP4304750B2 (ja) 窒化物半導体の成長方法及び窒化物半導体素子
JP2000040858A (ja) 光半導体装置、その製造方法、および半導体ウェハ
JP2001007447A (ja) 窒化物半導体レーザ素子
JP3446660B2 (ja) 窒化物半導体発光素子
JP3487251B2 (ja) 窒化物半導体レーザ素子
JP4991025B2 (ja) 窒化物半導体レーザ素子
JP3604278B2 (ja) 窒化物半導体レーザー素子
JP2006165407A (ja) 窒化物半導体レーザ素子
JP4639571B2 (ja) 窒化物半導体レーザ素子およびその製造方法
JP4165040B2 (ja) 窒化物半導体基板の製造方法
JPH09246651A (ja) 窒化物半導体レーザ素子
JP2001039800A (ja) 窒化物半導体の成長方法及び窒化物半導体素子
JP3622045B2 (ja) 窒化物半導体レーザ素子及びその製造方法
JP4211358B2 (ja) 窒化物半導体、窒化物半導体素子及びそれらの製造方法
JP2000196199A (ja) 窒化物半導体レーザ素子
JP2001044570A (ja) 窒化物半導体レーザ素子
JP4628651B2 (ja) 窒化物半導体発光素子の製造方法
JPH11312841A (ja) 窒化物半導体レーザ素子
JP3906739B2 (ja) 窒化物半導体基板の製造方法
JP3438675B2 (ja) 窒化物半導体の成長方法
JP3334624B2 (ja) 窒化物半導体レーザ素子
JP4045785B2 (ja) 窒化物半導体レーザダイオードとその製造方法
JP3893614B2 (ja) 窒化物半導体レーザ素子のストライプ導波路の側面及び窒化物半導体層の平面に絶縁性の保護膜を形成する方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050511

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050511

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060904

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080902

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081029

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100329

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101102

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101115

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term