JP4635237B2 - 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板 - Google Patents
高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 115
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 104
- 239000000758 substrate Substances 0.000 title claims description 76
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 230000015556 catabolic process Effects 0.000 title description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 81
- 239000000370 acceptor Substances 0.000 claims description 46
- 230000007547 defect Effects 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 41
- 229910052706 scandium Inorganic materials 0.000 claims description 33
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 33
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 24
- 229910052796 boron Inorganic materials 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 25
- 239000013078 crystal Substances 0.000 description 23
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 19
- 229910052720 vanadium Inorganic materials 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 238000005452 bending Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Chemical Vapour Deposition (AREA)
Description
炭化珪素(SiC)及び第3群窒化物(例えば、GaN、AlGaN及びInGaN)のような、バンド・ギャップが広い物質の工業化の可能性が高まって来たことに連れて、より高い周波数のMESFETを生産する潜在的可能性が、現実の工業化に至ることとなった。このような高周波デバイスは、多くの用途において非常に有用であり、最も良く知られているものには、電力増幅器、セルラ電話機のようなワイヤレス送受信機、及び同様の機器がある。
従来の半絶縁炭化珪素基板では(そして、場合によっては、「従来の」が比較的最近の時間を表すこともある)、炭化珪素にバナジウムをドープすることによって、適切な抵抗率が得られている。バナジウムが生ずるエネルギ・レベルは、炭化珪素の価電子帯及び伝導帯のほぼ中間、即ち、2.99eVのSiCバンドギャップにおけるいずれのバンド縁からも約1.5eVの所にある。また、炭化珪素にバナジウムをドープすることによって、バナジウムが炭化珪素内に残留するドナー(殆ど常に窒素)及びアクセプタ(ない場合が多い)を較正し、常温ではほぼ絶縁性となる物質を生成することが多い。このような物質についての説明は、例えば、米国特許第5,611,955号に明記されている。
高抵抗率の単結晶基板に用いる炭化珪素のポリタイプは、炭化珪素の3C、4H、6H及び15Rポリタイプからなる群から選択することが好ましい。
Claims (12)
- デバイスのための炭化珪素基板において、該基板は、
5E15〜3E16cm-3の活性化された濃度の窒素及びドナーとして作用する点欠陥と、
1E15〜2E16cm-3の濃度のスカンジウムと、
少なくとも1E16cm-3の濃度の硼素と、
アクセプタとして作用する、1E14〜3E16cm-3の濃度の電気的に活性な点欠陥とを含み、
前記スカンジウム、硼素及びアクセプタとして作用する点欠陥の電子エネルギ・レベルが、前記炭化珪素のバンドギャップ縁部から離間されていることによって導電的挙動を回避し、一方、中間ギャップから前記バンド縁部側に離間されていることによって、前記基板が炭化珪素のドープ領域と接触しているとき、及び前記基板内に存在する前記スカンジウム、硼素及びアクセプタとして作用する点欠陥の正味の量が、前記スカンジウムの電子エネルギ・レベルに前記基板のフェルミ・レベルを拘束するのに十分であるときに、中間レベル状態で生ずるよりも大きなバンド偏移を、前記基板及び前記ドープ領域の間に生じ、
前記炭化珪素基板の抵抗率が、常温(298K)において少なくとも5000Ω-cmであることを特徴とする炭化珪素基板。 - 請求項1記載の炭化珪素基板において、前記基板は、前記スカンジウム、硼素及びアクセプタとして作用する点欠陥によって較正されることを特徴とする炭化珪素基板。
- 請求項1記載の炭化珪素基板において、前記ドープ領域は、ドーパント打ち込み領域、ドーパント拡散領域、及びエピタキシャル層からなる群から選択されることを特徴とする炭化珪素基板。
- デバイスのための炭化珪素基板において、該基板は、
1cm3当たり5E15〜3E16の活性化された濃度の窒素及びドナーとして作用する点欠陥と、
単結晶炭化珪素の価電子帯に対して0.3〜1.4eVの間の電子エネルギ・レベルを有する1E15〜2E16cm-3の濃度のスカンジウム及び1E16cm-3の濃度の硼素と、
アクセプタとして作用する、1E14〜3E16cm-3の濃度の電気的に活性な点欠陥とを有し、
前記スカンジウム、硼素及びアクセプタとして作用する点欠陥は、前記窒素及びドナーとして作用する点欠陥を過剰較正し、かつ、前記炭化珪素基板のフェルミ・レベルを、前記スカンジウムの電子エネルギ・レベルに拘束するだけの量が存在することを特徴とする炭化珪素基板。 - デバイスのための炭化珪素基板において、該基板は、
1cm3当たり5E15〜3E16の活性化された濃度を有する電気的に活性の窒素及びドナーとして作用する点欠陥と、
アクセプタとして作用する、1E14〜3E16cm-3の濃度の電気的に活性な点欠陥と、
単結晶炭化珪素の価電子帯に対して0.3〜1.4eVの間の電子エネルギ・レベルを有する、1E15〜2E16cm-3の濃度のスカンジウム及び1E16cm-3の濃度の硼素と、
を有し、
前記スカンジウム、硼素及びアクセプタとして作用する点欠陥を合わせた量が、前記電気的に活性な窒素及びドナーとして作用する点欠陥の量よりも大きく、前記炭化珪素基板のフェルミ・レベルを、前記スカンジウムの電子エネルギ・レベルに拘束する
ことを特徴とする炭化珪素基板。 - デバイスのための炭化珪素基板において、該基板は、
意図して導入したものではない窒素及びドナーとして作用する点欠陥であって、1cm3当たり5E15〜3E16の活性化された濃度を有する窒素及びドナーとして作用する点欠陥と、
1E15〜2E16cm-3の濃度のスカンジウムと、
1E16cm-3の濃度の硼素と、
アクセプタとして作用する、1E14〜3E16cm-3の濃度の電気的に活性な点欠陥と、
を有し、
前記窒素の濃度が前記スカンジウムの濃度よりも高く、
前記硼素の濃度が、前記アクセプタとして作用する点欠陥、硼素及びスカンジウムを合わせた濃度に対して、前記窒素及びドナーとして作用する点欠陥を過剰較正し、前記炭化珪素基板のフェルミ・レベルを前記スカンジウムのレベルに拘束するのに十分である
ことを特徴とする炭化珪素基板。 - 半導体構造であって、請求項1乃至6のいずれかに記載の炭化珪素基板上に、炭化珪素のn型エピタキシャル層を備えていることを特徴とする半導体構造。
- 電界効果トランジスタであって、請求項7に記載の半導体構造を含む電界効果トランジスタ。
- 請求項1乃至6のいずれかに記載の炭化珪素基板において、前記炭化珪素のポリタイプは、3C、4H、6H及び15Rポリタイプからなる群から選択されていることを特徴とする炭化珪素基板。
- 請求項1乃至6のいずれかに記載の炭化珪素基板において、該基板は、常温にて少なくとも5,000Ω-cmの抵抗率を有することを特徴とする炭化珪素基板。
- 請求項1乃至6のいずれかに記載の炭化珪素基板において、該基板は、常温にて少なくとも10,000Ω-cmの抵抗率を有することを特徴とする炭化珪素基板。
- 請求項1乃至6のいずれかに記載の炭化珪素基板において、該基板は、常温にて少なくとも50,000Ω-cmの抵抗率を有することを特徴とする炭化珪素基板。
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US09/853,375 US6507046B2 (en) | 2001-05-11 | 2001-05-11 | High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
PCT/US2002/014430 WO2002092886A1 (en) | 2001-05-11 | 2002-05-08 | High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage |
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JP2004533720A JP2004533720A (ja) | 2004-11-04 |
JP2004533720A5 JP2004533720A5 (ja) | 2005-12-22 |
JP4635237B2 true JP4635237B2 (ja) | 2011-02-23 |
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US (1) | US6507046B2 (ja) |
EP (1) | EP1386026B1 (ja) |
JP (1) | JP4635237B2 (ja) |
KR (2) | KR101027424B1 (ja) |
CN (1) | CN100367509C (ja) |
CA (1) | CA2443512A1 (ja) |
TW (1) | TW591751B (ja) |
WO (1) | WO2002092886A1 (ja) |
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JP7009147B2 (ja) * | 2017-09-29 | 2022-01-25 | 富士電機株式会社 | 炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置 |
JP7235318B2 (ja) * | 2018-10-16 | 2023-03-08 | 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 | 少量のバナジウムをドーピングした半絶縁炭化ケイ素単結晶、基板、製造方法 |
KR102161593B1 (ko) * | 2018-11-19 | 2020-10-05 | 한국에너지기술연구원 | 고저항 에피탁시 기판을 이용한 반도체 수광 소자 및 이를 제조하는 방법 |
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CN117940620A (zh) * | 2021-10-12 | 2024-04-26 | 日本碍子株式会社 | 包含稀土的SiC基板和SiC复合基板 |
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US6362495B1 (en) * | 1998-03-05 | 2002-03-26 | Purdue Research Foundation | Dual-metal-trench silicon carbide Schottky pinch rectifier |
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US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
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CA2443512A1 (en) | 2002-11-21 |
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TW591751B (en) | 2004-06-11 |
US20020167010A1 (en) | 2002-11-14 |
WO2002092886A1 (en) | 2002-11-21 |
KR20090107569A (ko) | 2009-10-13 |
JP2004533720A (ja) | 2004-11-04 |
EP1386026B1 (en) | 2014-11-12 |
US6507046B2 (en) | 2003-01-14 |
EP1386026A1 (en) | 2004-02-04 |
KR100984715B1 (ko) | 2010-10-01 |
CN100367509C (zh) | 2008-02-06 |
KR101027424B1 (ko) | 2011-04-11 |
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