JPWO2023068309A1 - - Google Patents

Info

Publication number
JPWO2023068309A1
JPWO2023068309A1 JP2023514848A JP2023514848A JPWO2023068309A1 JP WO2023068309 A1 JPWO2023068309 A1 JP WO2023068309A1 JP 2023514848 A JP2023514848 A JP 2023514848A JP 2023514848 A JP2023514848 A JP 2023514848A JP WO2023068309 A1 JPWO2023068309 A1 JP WO2023068309A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023514848A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023068309A1 publication Critical patent/JPWO2023068309A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023514848A 2021-10-22 2022-10-19 Pending JPWO2023068309A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021039155 2021-10-22
PCT/JP2022/039004 WO2023068309A1 (ja) 2021-10-22 2022-10-19 ＳｉＣ基板及びＳｉＣ複合基板

Publications (1)

Publication Number Publication Date
JPWO2023068309A1 true JPWO2023068309A1 (ja) 2023-04-27

Family

ID=86058268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023514848A Pending JPWO2023068309A1 (ja) 2021-10-22 2022-10-19

Country Status (3)

Country Link
JP (1) JPWO2023068309A1 (ja)
CN (1) CN117529584A (ja)
WO (1) WO2023068309A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2939615B2 (ja) * 1998-02-04 1999-08-25 日本ピラー工業株式会社 単結晶ＳｉＣ及びその製造方法
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
JP6069758B2 (ja) 2012-08-26 2017-02-01 国立大学法人名古屋大学 ＳｉＣ単結晶の製造方法

Also Published As

Publication number Publication date
WO2023068309A1 (ja) 2023-04-27
CN117529584A (zh) 2024-02-06

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Legal Events

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