JP4634197B2 - 基板処理装置、半導体装置の製造方法 - Google Patents

基板処理装置、半導体装置の製造方法 Download PDF

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Publication number
JP4634197B2
JP4634197B2 JP2005087715A JP2005087715A JP4634197B2 JP 4634197 B2 JP4634197 B2 JP 4634197B2 JP 2005087715 A JP2005087715 A JP 2005087715A JP 2005087715 A JP2005087715 A JP 2005087715A JP 4634197 B2 JP4634197 B2 JP 4634197B2
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zone
temperature
zones
pid
heating
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JP2006269868A5 (enExample
JP2006269868A (ja
Inventor
徳信 赤尾
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2005087715A 2005-03-25 2005-03-25 基板処理装置、半導体装置の製造方法 Expired - Lifetime JP4634197B2 (ja)

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JP2005087715A JP4634197B2 (ja) 2005-03-25 2005-03-25 基板処理装置、半導体装置の製造方法

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JP2005087715A JP4634197B2 (ja) 2005-03-25 2005-03-25 基板処理装置、半導体装置の製造方法

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JP2006269868A JP2006269868A (ja) 2006-10-05
JP2006269868A5 JP2006269868A5 (enExample) 2008-05-08
JP4634197B2 true JP4634197B2 (ja) 2011-02-16

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010027846A (ja) * 2008-07-18 2010-02-04 Kokusai Electric Semiconductor Service Inc 基板処理装置および半導体装置の製造方法
JP5026549B2 (ja) * 2010-04-08 2012-09-12 シャープ株式会社 加熱制御システム、それを備えた成膜装置、および温度制御方法
US12278127B2 (en) * 2022-06-08 2025-04-15 Applied Materials, Inc. Auto fine-tuner for desired temperature profile
CN120432384B (zh) * 2025-07-08 2025-09-23 季华实验室 一种半导体退火方法、系统及存储介质

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049096A (ja) * 1998-07-31 2000-02-18 Kokusai Electric Co Ltd 成膜方法
JP2001318702A (ja) * 2000-05-08 2001-11-16 Yamatake Corp 制御システム
JP3833479B2 (ja) * 2001-01-25 2006-10-11 株式会社山武 制御装置
JP2003022978A (ja) * 2001-07-10 2003-01-24 Hitachi Kokusai Electric Inc 基板処理装置
JP4262908B2 (ja) * 2001-08-10 2009-05-13 東京エレクトロン株式会社 熱処理装置及び熱処理方法

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