JP4633251B2 - Ｉｉｉ族窒化物半導体発光ダイオード及びその製造方法 - Google Patents

Ｉｉｉ族窒化物半導体発光ダイオード及びその製造方法 Download PDF

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JP4633251B2
JP4633251B2 JP2000398312A JP2000398312A JP4633251B2 JP 4633251 B2 JP4633251 B2 JP 4633251B2 JP 2000398312 A JP2000398312 A JP 2000398312A JP 2000398312 A JP2000398312 A JP 2000398312A JP 4633251 B2 JP4633251 B2 JP 4633251B2
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layer
group iii
emitting diode
nitride semiconductor
iii nitride
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JP2002198562A5 (https=
JP2002198562A (ja
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孝治 保科
隆 宇田川
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Resonac Holdings Corp
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Showa Denko KK
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JP2000398312A 2000-12-27 2000-12-27 Ｉｉｉ族窒化物半導体発光ダイオード及びその製造方法 Expired - Fee Related JP4633251B2 (ja)

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JP2000398312A JP4633251B2 (ja) 2000-12-27 2000-12-27 Ｉｉｉ族窒化物半導体発光ダイオード及びその製造方法

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JP2002198562A JP2002198562A (ja) 2002-07-12
JP2002198562A5 JP2002198562A5 (https=) 2008-02-14
JP4633251B2 true JP4633251B2 (ja) 2011-02-16

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004056010A (ja) 2002-07-23 2004-02-19 Toyota Central Res & Dev Lab Inc 窒化物半導体発光素子
JP2008182110A (ja) 2007-01-25 2008-08-07 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2809690B2 (ja) * 1989-01-13 1998-10-15 株式会社東芝 化合物半導体材料とこれを用いた半導体素子およびその製造方法
JP3505357B2 (ja) * 1997-07-16 2004-03-08 株式会社東芝 窒化ガリウム系半導体素子およびその製造方法
JP3747125B2 (ja) * 1998-03-10 2006-02-22 昭和電工株式会社 エピタキシャルウェハおよび化合物半導体デバイス
JPH10242515A (ja) * 1998-04-06 1998-09-11 Toshiba Corp 青色半導体発光素子
JP3372483B2 (ja) * 1998-06-03 2003-02-04 一高 寺嶋 Ｉｉｉ族窒化物半導体発光素子

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