JP2002198562A5 - - Google Patents
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- Publication number
- JP2002198562A5 JP2002198562A5 JP2000398312A JP2000398312A JP2002198562A5 JP 2002198562 A5 JP2002198562 A5 JP 2002198562A5 JP 2000398312 A JP2000398312 A JP 2000398312A JP 2000398312 A JP2000398312 A JP 2000398312A JP 2002198562 A5 JP2002198562 A5 JP 2002198562A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- nitride semiconductor
- semiconductor light
- layer
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- YZYDPPZYDIRSJT-UHFFFAOYSA-K boron phosphate Chemical compound [B+3].[O-]P([O-])([O-])=O YZYDPPZYDIRSJT-UHFFFAOYSA-K 0.000 description 2
- 229910000149 boron phosphate Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000398312A JP4633251B2 (ja) | 2000-12-27 | 2000-12-27 | Ｉｉｉ族窒化物半導体発光ダイオード及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000398312A JP4633251B2 (ja) | 2000-12-27 | 2000-12-27 | Ｉｉｉ族窒化物半導体発光ダイオード及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002198562A JP2002198562A (ja) | 2002-07-12 |
| JP2002198562A5 true JP2002198562A5 (https=) | 2008-02-14 |
| JP4633251B2 JP4633251B2 (ja) | 2011-02-16 |
Family
ID=18863306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000398312A Expired - Fee Related JP4633251B2 (ja) | 2000-12-27 | 2000-12-27 | Ｉｉｉ族窒化物半導体発光ダイオード及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4633251B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004056010A (ja) | 2002-07-23 | 2004-02-19 | Toyota Central Res & Dev Lab Inc | 窒化物半導体発光素子 |
| JP2008182110A (ja) | 2007-01-25 | 2008-08-07 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2809690B2 (ja) * | 1989-01-13 | 1998-10-15 | 株式会社東芝 | 化合物半導体材料とこれを用いた半導体素子およびその製造方法 |
| JP3505357B2 (ja) * | 1997-07-16 | 2004-03-08 | 株式会社東芝 | 窒化ガリウム系半導体素子およびその製造方法 |
| JP3747125B2 (ja) * | 1998-03-10 | 2006-02-22 | 昭和電工株式会社 | エピタキシャルウェハおよび化合物半導体デバイス |
| JPH10242515A (ja) * | 1998-04-06 | 1998-09-11 | Toshiba Corp | 青色半導体発光素子 |
| JP3372483B2 (ja) * | 1998-06-03 | 2003-02-04 | 一高 寺嶋 | Ｉｉｉ族窒化物半導体発光素子 |
-
2000
- 2000-12-27 JP JP2000398312A patent/JP4633251B2/ja not_active Expired - Fee Related
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