JP4630906B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4630906B2
JP4630906B2 JP2008051240A JP2008051240A JP4630906B2 JP 4630906 B2 JP4630906 B2 JP 4630906B2 JP 2008051240 A JP2008051240 A JP 2008051240A JP 2008051240 A JP2008051240 A JP 2008051240A JP 4630906 B2 JP4630906 B2 JP 4630906B2
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JP
Japan
Prior art keywords
core material
film
pattern
semiconductor device
manufacturing
Prior art date
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Expired - Fee Related
Application number
JP2008051240A
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English (en)
Japanese (ja)
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JP2009212163A (ja
JP2009212163A5 (https=
Inventor
圭介 菊谷
勝典 矢橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2008051240A priority Critical patent/JP4630906B2/ja
Priority to US12/395,094 priority patent/US8088689B2/en
Priority to KR1020090016754A priority patent/KR101087311B1/ko
Publication of JP2009212163A publication Critical patent/JP2009212163A/ja
Publication of JP2009212163A5 publication Critical patent/JP2009212163A5/ja
Application granted granted Critical
Publication of JP4630906B2 publication Critical patent/JP4630906B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP2008051240A 2008-02-29 2008-02-29 半導体装置の製造方法 Expired - Fee Related JP4630906B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008051240A JP4630906B2 (ja) 2008-02-29 2008-02-29 半導体装置の製造方法
US12/395,094 US8088689B2 (en) 2008-02-29 2009-02-27 Method of fabricating semiconductor device
KR1020090016754A KR101087311B1 (ko) 2008-02-29 2009-02-27 반도체 장치를 제조하는 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008051240A JP4630906B2 (ja) 2008-02-29 2008-02-29 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2009212163A JP2009212163A (ja) 2009-09-17
JP2009212163A5 JP2009212163A5 (https=) 2010-04-08
JP4630906B2 true JP4630906B2 (ja) 2011-02-09

Family

ID=41013514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008051240A Expired - Fee Related JP4630906B2 (ja) 2008-02-29 2008-02-29 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US8088689B2 (https=)
JP (1) JP4630906B2 (https=)
KR (1) KR101087311B1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5160302B2 (ja) * 2008-05-19 2013-03-13 株式会社東芝 半導体装置の製造方法
JP5606388B2 (ja) 2011-05-13 2014-10-15 株式会社東芝 パターン形成方法
JP2013197266A (ja) 2012-03-19 2013-09-30 Toshiba Corp 半導体装置およびその製造方法
US9564361B2 (en) * 2013-09-13 2017-02-07 Qualcomm Incorporated Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device
US9847339B2 (en) * 2016-04-12 2017-12-19 Macronix International Co., Ltd. Self-aligned multiple patterning semiconductor device fabrication
JP6981945B2 (ja) 2018-09-13 2021-12-17 信越化学工業株式会社 パターン形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6435916A (en) * 1987-07-31 1989-02-07 Hitachi Ltd Formation of fine pattern
JPH01119028A (ja) * 1987-10-30 1989-05-11 Nec Corp 半導体装置の製造方法
US4838991A (en) 1987-10-30 1989-06-13 International Business Machines Corporation Process for defining organic sidewall structures
US5328810A (en) * 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
JP2006032648A (ja) * 2004-07-16 2006-02-02 Toshiba Corp パターン形成方法を含む半導体装置の製造方法
US7253118B2 (en) 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
JP4921723B2 (ja) 2005-04-18 2012-04-25 株式会社東芝 半導体装置の製造方法
JP4271243B2 (ja) * 2006-04-11 2009-06-03 株式会社東芝 集積回路パターンの形成方法

Also Published As

Publication number Publication date
US20090221147A1 (en) 2009-09-03
JP2009212163A (ja) 2009-09-17
US8088689B2 (en) 2012-01-03
KR101087311B1 (ko) 2011-11-25
KR20090093869A (ko) 2009-09-02

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