JP4625673B2 - 露光方法及び露光装置 - Google Patents

露光方法及び露光装置 Download PDF

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Publication number
JP4625673B2
JP4625673B2 JP2004301748A JP2004301748A JP4625673B2 JP 4625673 B2 JP4625673 B2 JP 4625673B2 JP 2004301748 A JP2004301748 A JP 2004301748A JP 2004301748 A JP2004301748 A JP 2004301748A JP 4625673 B2 JP4625673 B2 JP 4625673B2
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JP
Japan
Prior art keywords
exposure
substrate
design pattern
liquid film
transfer
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Expired - Fee Related
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JP2004301748A
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English (en)
Japanese (ja)
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JP2006114765A (ja
Inventor
和也 福原
信一 伊藤
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Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004301748A priority Critical patent/JP4625673B2/ja
Priority to TW094132861A priority patent/TW200632566A/zh
Priority to US11/249,712 priority patent/US7446853B2/en
Publication of JP2006114765A publication Critical patent/JP2006114765A/ja
Application granted granted Critical
Publication of JP4625673B2 publication Critical patent/JP4625673B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004301748A 2004-10-15 2004-10-15 露光方法及び露光装置 Expired - Fee Related JP4625673B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004301748A JP4625673B2 (ja) 2004-10-15 2004-10-15 露光方法及び露光装置
TW094132861A TW200632566A (en) 2004-10-15 2005-09-22 Exposure method and exposure equipment
US11/249,712 US7446853B2 (en) 2004-10-15 2005-10-14 Exposure method, exposure tool and method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004301748A JP4625673B2 (ja) 2004-10-15 2004-10-15 露光方法及び露光装置

Publications (2)

Publication Number Publication Date
JP2006114765A JP2006114765A (ja) 2006-04-27
JP4625673B2 true JP4625673B2 (ja) 2011-02-02

Family

ID=36180370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004301748A Expired - Fee Related JP4625673B2 (ja) 2004-10-15 2004-10-15 露光方法及び露光装置

Country Status (3)

Country Link
US (1) US7446853B2 (enExample)
JP (1) JP4625673B2 (enExample)
TW (1) TW200632566A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE467902T1 (de) * 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
US7501227B2 (en) * 2005-08-31 2009-03-10 Taiwan Semiconductor Manufacturing Company System and method for photolithography in semiconductor manufacturing
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
US7666576B2 (en) * 2006-06-07 2010-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure scan and step direction optimization
US20080050680A1 (en) * 2006-08-24 2008-02-28 Stefan Brandl Lithography systems and methods
JP4316595B2 (ja) * 2006-09-13 2009-08-19 株式会社東芝 液浸補助板の洗浄方法と液浸露光方法及びパターン形成方法
US8330936B2 (en) * 2006-09-20 2012-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4357514B2 (ja) * 2006-09-29 2009-11-04 株式会社東芝 液浸露光方法
JP2008227007A (ja) * 2007-03-09 2008-09-25 Toshiba Corp 液浸露光方法及び液浸露光装置
DE102007025340B4 (de) * 2007-05-31 2019-12-05 Globalfoundries Inc. Immersionslithograpieprozess unter Anwendung einer variablen Abtastgeschwindigkeit und Lithographiesystem
JP2009194247A (ja) * 2008-02-15 2009-08-27 Canon Inc 露光装置
US20090305171A1 (en) * 2008-06-10 2009-12-10 Nikon Corporation Apparatus for scanning sites on a wafer along a short dimension of the sites
US20090310115A1 (en) * 2008-06-12 2009-12-17 Nikon Corporation Apparatus and method for exposing adjacent sites on a substrate
NL2002983A1 (nl) 2008-06-26 2009-12-29 Asml Netherlands Bv A lithographic apparatus and a method of operating the lithographic apparatus.
EP2151717A1 (en) * 2008-08-05 2010-02-10 ASML Holding N.V. Full wafer width scanning using step and scan system
US8610878B2 (en) * 2010-03-04 2013-12-17 Asml Netherlands B.V. Lithographic apparatus and method
KR20120100628A (ko) * 2011-03-04 2012-09-12 삼성정밀화학 주식회사 전방향족 액정 폴리에스테르 수지의 제조방법과 그 방법에 의해 제조된 수지, 및 상기 수지를 포함하는 컴파운드
JP5986538B2 (ja) * 2013-06-10 2016-09-06 キヤノン株式会社 露光装置および物品の製造方法
JP2016154241A (ja) * 2013-07-02 2016-08-25 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
JP5960198B2 (ja) 2013-07-02 2016-08-02 キヤノン株式会社 パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法
US9760027B2 (en) * 2013-10-17 2017-09-12 United Microelectronics Corp. Scanner routing method for particle removal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000021702A (ja) * 1998-06-30 2000-01-21 Canon Inc 露光装置ならびにデバイス製造方法
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
CN101713932B (zh) * 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
CN101382738B (zh) * 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2005072132A (ja) 2003-08-21 2005-03-17 Nikon Corp 露光装置及びデバイス製造方法
JPWO2005106930A1 (ja) * 2004-04-27 2008-03-21 株式会社ニコン 露光方法、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
TWI317053B (enExample) 2009-11-11
JP2006114765A (ja) 2006-04-27
US20060082747A1 (en) 2006-04-20
US7446853B2 (en) 2008-11-04
TW200632566A (en) 2006-09-16

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