JP4620940B2 - 結晶中の欠陥濃度低減方法 - Google Patents
結晶中の欠陥濃度低減方法 Download PDFInfo
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- JP4620940B2 JP4620940B2 JP2003182067A JP2003182067A JP4620940B2 JP 4620940 B2 JP4620940 B2 JP 4620940B2 JP 2003182067 A JP2003182067 A JP 2003182067A JP 2003182067 A JP2003182067 A JP 2003182067A JP 4620940 B2 JP4620940 B2 JP 4620940B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/065—Presses for the formation of diamonds or boronitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/063—Carbides
- B01J2203/0635—Silicon carbide
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0665—Gallium nitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/067—Aluminium nitrides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/069—Recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
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Description
結晶が炭化ケイ素である一実施形態では、ベーサル面(底面)に沿ったクリープが800℃より高い温度で顕著になり、1600℃より高い温度でc軸に平行なクリープが観察されるようになる。その活性化エネルギーはそれぞれ2.7eV及び1.9eVである。(0001)に垂直又は平衡なクリープについての応力指数はそれぞれ3.3及び4.9であり、クリープが5GPaでは100kPa(ほぼ周囲条件)の場合よりも3×1015〜1023倍速いことを示している。したがって、高い静水圧下1000〜2000℃の温度でアニールすることによりマイクロもしくはナノパイプをなくすことができる。理論に縛られるものではないが、マイクロボイドもしくはナノパイプの圧潰の最も単純な機構は、欠陥のまわりの材料の塑性降伏であると考えられる。外部圧力Pextの存在下、半径A、内部圧力Piのマイクロボイドのまわりの応力σv(R) は下記に等しい(T.R. Anthony, Diamond & Related Materials, 8, 78−88 (1999))。
ここで、Rはマイクロボイドの中心からの半径方向距離である。
ここで、Rはパイプの中心からの半径方向距離である。
同様に、マイクロパイプについても、パイプを圧潰するのに必要な圧力は次式で与えられる。
マイクロパイプはマイクロボイドより前に圧潰し、両欠陥は、圧潰するのに材料の降伏強さより高い圧力を必要とする。、HPは大きなPextを意味し、HTは低い降伏応力Yを意味するので、HP/HT条件はこれらの欠陥を圧潰するのに適切である。
Claims (9)
- 非ダイヤモンド結晶材料である炭化ケイ素材料中の欠陥及び/又は歪みを除去する方法であって、
(a)欠陥及び/又は歪みを含む前記炭化ケイ素材料を圧力媒体である塩化ナトリウム(NaCl)中に置き、
(b)前記材料及び圧力媒体を高圧セル内に入れ、
(c)前記セルを高圧装置内で反応条件下、材料中の欠陥又は歪みを除去することができる圧力、温度及び時間で処理する
工程を含む、材料中の欠陥及び/又は歪みを除去する方法。 - 前記材料中の欠陥又は歪みを除去することができる温度が、1000〜2000℃である、請求項1記載の方法。
- 前記材料中の欠陥又は歪みを除去することができる圧力及び時間が、それぞれ5.5GPa、30分である、請求項2記載の方法
- 前記圧力媒体が不活性ガス及び加工条件下で液体である前記結晶を密に包囲する物質を含有する、請求項1〜3のいずれかに記載の方法。
- 前記不活性ガスがアルゴン、ヘリウム、窒素又はこれらの混合物の1種以上を含有する、請求項4記載の方法。
- 前記物質がLi2O、Na2O、K2O、MgO、CaO、SrO、BaO、B2O3、Al2O3、Ga2O3、In2O3、SiO2、GeO2、SnOx、PbOx、リン酸塩ガラス、フッ化物ガラス、窒化物ガラス、及びこれらの配合物又は混合物の1種以上を含有する、請求項4記載の方法。
- 前記材料が、ブール、電子ウェーハ、窓、レーザーロッド又はセンサの1つ以上の形態の非ダイヤモンド結晶である、請求項1〜3のいずれかに記載の方法。
- 前記結晶が、6H−SiC、4H−SiC、15R−SiC、3C−SiC、8H−SiC、2H−SiC、のマトリックスに基づくレーザー結晶のうち1種以上である、請求項1〜3のいずれかに記載の方法。
- 前記結晶が寸法0.1〜500mmのブールである、請求項7記載の方法。
Applications Claiming Priority (1)
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US39274102P | 2002-06-27 | 2002-06-27 |
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JP2006204610A Division JP2007015918A (ja) | 2002-06-27 | 2006-07-27 | 結晶中の欠陥濃度低減方法 |
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JP2004161604A JP2004161604A (ja) | 2004-06-10 |
JP4620940B2 true JP4620940B2 (ja) | 2011-01-26 |
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JP2003182067A Expired - Fee Related JP4620940B2 (ja) | 2002-06-27 | 2003-06-26 | 結晶中の欠陥濃度低減方法 |
JP2006204610A Pending JP2007015918A (ja) | 2002-06-27 | 2006-07-27 | 結晶中の欠陥濃度低減方法 |
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US (2) | US7175704B2 (ja) |
EP (1) | EP1378591B1 (ja) |
JP (2) | JP4620940B2 (ja) |
KR (2) | KR100987831B1 (ja) |
CN (2) | CN1920124A (ja) |
AT (2) | ATE426695T1 (ja) |
DE (1) | DE60326792D1 (ja) |
ZA (1) | ZA200304563B (ja) |
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DE60326792D1 (de) | 2009-05-07 |
CN1920124A (zh) | 2007-02-28 |
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