JP4617492B2 - 偏光変調光学素子および偏光変調光学素子の製造方法 - Google Patents

偏光変調光学素子および偏光変調光学素子の製造方法 Download PDF

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Publication number
JP4617492B2
JP4617492B2 JP2007121775A JP2007121775A JP4617492B2 JP 4617492 B2 JP4617492 B2 JP 4617492B2 JP 2007121775 A JP2007121775 A JP 2007121775A JP 2007121775 A JP2007121775 A JP 2007121775A JP 4617492 B2 JP4617492 B2 JP 4617492B2
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Japan
Prior art keywords
component
polarization
optical element
optical
optical system
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JP2007121775A
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English (en)
Japanese (ja)
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JP2007316634A5 (enExample
JP2007316634A (ja
Inventor
クレーマー ダニエル
ミュラー ラルフ
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49908—Joining by deforming

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Polarising Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007121775A 2006-05-05 2007-05-02 偏光変調光学素子および偏光変調光学素子の製造方法 Expired - Fee Related JP4617492B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006021334A DE102006021334B3 (de) 2006-05-05 2006-05-05 Polarisationsbeeinflussendes optisches Element sowie Verfahren zu dessen Herstellung sowie optisches System und mikrolithographische Projektionsbelichtungsanlage mit einem solchen Element

Publications (3)

Publication Number Publication Date
JP2007316634A JP2007316634A (ja) 2007-12-06
JP2007316634A5 JP2007316634A5 (enExample) 2010-06-17
JP4617492B2 true JP4617492B2 (ja) 2011-01-26

Family

ID=38320133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007121775A Expired - Fee Related JP4617492B2 (ja) 2006-05-05 2007-05-02 偏光変調光学素子および偏光変調光学素子の製造方法

Country Status (3)

Country Link
US (2) US7903333B2 (enExample)
JP (1) JP4617492B2 (enExample)
DE (1) DE102006021334B3 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006021334B3 (de) * 2006-05-05 2007-08-30 Carl Zeiss Smt Ag Polarisationsbeeinflussendes optisches Element sowie Verfahren zu dessen Herstellung sowie optisches System und mikrolithographische Projektionsbelichtungsanlage mit einem solchen Element
DE102007055567A1 (de) * 2007-11-20 2009-05-28 Carl Zeiss Smt Ag Optisches System
DE102007058862A1 (de) * 2007-12-06 2009-06-10 Carl Zeiss Smt Ag Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102012213553A1 (de) * 2012-08-01 2013-08-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102022118146B3 (de) * 2022-07-20 2023-12-07 Carl Zeiss Jena Gmbh Verfahren zum Herstellen eines optischen Elements für eine Lithographieanlage
CN116466425B (zh) * 2023-03-20 2025-08-15 中国工程物理研究院激光聚变研究中心 一种大口径二维连续偏振调制元件及制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19535392A1 (de) * 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
DE19807120A1 (de) 1998-02-20 1999-08-26 Zeiss Carl Fa Optisches System mit Polarisationskompensator
EP1022617A3 (en) 1999-01-20 2003-01-02 ASML Netherlands B.V. Optical correction plate, and its application in a lithographic projection apparatus
US6437916B1 (en) * 2000-10-10 2002-08-20 Jds Uniphase Corporation Strain-stabilized birefringent crystal
DE10123725A1 (de) * 2001-05-15 2002-11-21 Zeiss Carl Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
DE10133841A1 (de) * 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen
DE10328938A1 (de) * 2003-06-27 2005-01-20 Carl Zeiss Smt Ag Korrektureinrichtung zur Kompensation von Störungen der Polarisationsverteilung sowie Projektionsobjektiv für die Mikrolithografie
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
DE102006021334B3 (de) * 2006-05-05 2007-08-30 Carl Zeiss Smt Ag Polarisationsbeeinflussendes optisches Element sowie Verfahren zu dessen Herstellung sowie optisches System und mikrolithographische Projektionsbelichtungsanlage mit einem solchen Element

Also Published As

Publication number Publication date
DE102006021334B3 (de) 2007-08-30
US8213079B2 (en) 2012-07-03
US7903333B2 (en) 2011-03-08
JP2007316634A (ja) 2007-12-06
US20110109894A1 (en) 2011-05-12
US20070211246A1 (en) 2007-09-13

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