JP4609757B2 - 成膜装置における基板装着方法 - Google Patents

成膜装置における基板装着方法 Download PDF

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Publication number
JP4609757B2
JP4609757B2 JP2005047815A JP2005047815A JP4609757B2 JP 4609757 B2 JP4609757 B2 JP 4609757B2 JP 2005047815 A JP2005047815 A JP 2005047815A JP 2005047815 A JP2005047815 A JP 2005047815A JP 4609757 B2 JP4609757 B2 JP 4609757B2
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JP
Japan
Prior art keywords
substrate
mask
chuck
glass substrate
forming apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005047815A
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English (en)
Japanese (ja)
Other versions
JP2006233259A (ja
Inventor
達哉 片岡
兼次 長尾
謙一 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Engineering and Shipbuilding Co Ltd
Choshu Industry Co Ltd
Mitsui E&S Co Ltd
Original Assignee
Mitsui Engineering and Shipbuilding Co Ltd
Choshu Industry Co Ltd
Mitsui E&S Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering and Shipbuilding Co Ltd, Choshu Industry Co Ltd, Mitsui E&S Holdings Co Ltd filed Critical Mitsui Engineering and Shipbuilding Co Ltd
Priority to JP2005047815A priority Critical patent/JP4609757B2/ja
Priority to KR1020077016151A priority patent/KR100932140B1/ko
Priority to CN2006800015532A priority patent/CN101090996B/zh
Priority to TW095105918A priority patent/TW200632117A/zh
Priority to PCT/JP2006/303191 priority patent/WO2006090749A1/ja
Publication of JP2006233259A publication Critical patent/JP2006233259A/ja
Application granted granted Critical
Publication of JP4609757B2 publication Critical patent/JP4609757B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2005047815A 2005-02-23 2005-02-23 成膜装置における基板装着方法 Expired - Fee Related JP4609757B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005047815A JP4609757B2 (ja) 2005-02-23 2005-02-23 成膜装置における基板装着方法
KR1020077016151A KR100932140B1 (ko) 2005-02-23 2006-02-22 성막 장치에서의 기판 장착 방법 및 성막 방법
CN2006800015532A CN101090996B (zh) 2005-02-23 2006-02-22 成膜装置的基板安装方法以及成膜方法
TW095105918A TW200632117A (en) 2005-02-23 2006-02-22 Method of mounting substrate in film deposition apparatus and method of depositing film
PCT/JP2006/303191 WO2006090749A1 (ja) 2005-02-23 2006-02-22 成膜装置における基板装着方法および成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005047815A JP4609757B2 (ja) 2005-02-23 2005-02-23 成膜装置における基板装着方法

Publications (2)

Publication Number Publication Date
JP2006233259A JP2006233259A (ja) 2006-09-07
JP4609757B2 true JP4609757B2 (ja) 2011-01-12

Family

ID=36927387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005047815A Expired - Fee Related JP4609757B2 (ja) 2005-02-23 2005-02-23 成膜装置における基板装着方法

Country Status (5)

Country Link
JP (1) JP4609757B2 (zh)
KR (1) KR100932140B1 (zh)
CN (1) CN101090996B (zh)
TW (1) TW200632117A (zh)
WO (1) WO2006090749A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009125802A1 (ja) * 2008-04-09 2009-10-15 株式会社 アルバック 蒸発源及び成膜装置
WO2010106958A1 (ja) * 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
DE102009034532A1 (de) 2009-07-23 2011-02-03 Msg Lithoglas Ag Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat
TWI598377B (zh) 2015-08-20 2017-09-11 大連化學工業股份有限公司 聚碳酸酯二醇及使用該聚碳酸酯二醇製得之熱塑性聚氨酯
CN105762278B (zh) * 2016-03-04 2018-05-01 苏州大学 一种真空蒸镀装置及利用其制备有机电致发光器件的方法
JP6876520B2 (ja) * 2016-06-24 2021-05-26 キヤノントッキ株式会社 基板の挟持方法、基板の挟持装置、成膜方法、成膜装置、及び電子デバイスの製造方法、基板載置方法、アライメント方法、基板載置装置
WO2018211703A1 (ja) * 2017-05-19 2018-11-22 シャープ株式会社 蒸着方法、蒸着装置、ｅｌデバイスの製造装置、及びｅｌデバイスの製造方法
JP6468540B2 (ja) * 2017-05-22 2019-02-13 キヤノントッキ株式会社 基板搬送機構、基板載置機構、成膜装置及びそれらの方法
JP2024037209A (ja) * 2022-09-07 2024-03-19 キヤノントッキ株式会社 成膜装置、成膜装置の駆動方法及び成膜方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH051375A (ja) * 1991-06-25 1993-01-08 Canon Inc 真空処理装置
JPH0688206A (ja) * 1992-09-08 1994-03-29 Dainippon Printing Co Ltd スパッタ用治具
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2004303559A (ja) * 2003-03-31 2004-10-28 Tohoku Pioneer Corp アライメント装置及び方法、並びにこれを用いて製造される有機ｅｌ素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1046339A (ja) * 1996-07-29 1998-02-17 Matsushita Electric Ind Co Ltd 基板ハンドリング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH051375A (ja) * 1991-06-25 1993-01-08 Canon Inc 真空処理装置
JPH0688206A (ja) * 1992-09-08 1994-03-29 Dainippon Printing Co Ltd スパッタ用治具
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2004303559A (ja) * 2003-03-31 2004-10-28 Tohoku Pioneer Corp アライメント装置及び方法、並びにこれを用いて製造される有機ｅｌ素子

Also Published As

Publication number Publication date
JP2006233259A (ja) 2006-09-07
WO2006090749A1 (ja) 2006-08-31
CN101090996A (zh) 2007-12-19
TWI316968B (zh) 2009-11-11
CN101090996B (zh) 2010-05-26
TW200632117A (en) 2006-09-16
KR100932140B1 (ko) 2009-12-16
KR20070087080A (ko) 2007-08-27

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