JP4607576B2 - 半導体製造装置 - Google Patents

半導体製造装置 Download PDF

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Publication number
JP4607576B2
JP4607576B2 JP2004381364A JP2004381364A JP4607576B2 JP 4607576 B2 JP4607576 B2 JP 4607576B2 JP 2004381364 A JP2004381364 A JP 2004381364A JP 2004381364 A JP2004381364 A JP 2004381364A JP 4607576 B2 JP4607576 B2 JP 4607576B2
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monitoring
reaction vessel
boundary
value
abnormality
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JP2004381364A
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Japanese (ja)
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JP2006186280A (ja
Inventor
浩一 坂本
穣 小幡
典昭 小山
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2004381364A priority Critical patent/JP4607576B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to PCT/JP2005/023617 priority patent/WO2006070689A1/ja
Priority to CNB2005800453566A priority patent/CN100536076C/zh
Priority to US11/794,374 priority patent/US7751921B2/en
Priority to EP05820365A priority patent/EP1845553B1/en
Priority to KR1020077014655A priority patent/KR101208295B1/ko
Priority to DE602005017310T priority patent/DE602005017310D1/de
Priority to TW094147053A priority patent/TW200644121A/zh
Publication of JP2006186280A publication Critical patent/JP2006186280A/ja
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Publication of JP4607576B2 publication Critical patent/JP4607576B2/ja
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JP2004381364A 2004-12-28 2004-12-28 半導体製造装置 Active JP4607576B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004381364A JP4607576B2 (ja) 2004-12-28 2004-12-28 半導体製造装置
CNB2005800453566A CN100536076C (zh) 2004-12-28 2005-12-22 半导体制造装置和进行该半导体制造装置的异常检测、异常原因的确定或异常预测的方法
US11/794,374 US7751921B2 (en) 2004-12-28 2005-12-22 Semiconductor manufacturing apparatus, method of detecting abnormality, identifying cause of abnormality, or predicting abnormality in the semiconductor manufacturing apparatus, and storage medium storing computer program for performing the method
EP05820365A EP1845553B1 (en) 2004-12-28 2005-12-22 Semiconductor manufacturing apparatus, abnormality detection in such semiconductor manufacturing apparatus, method for specifying abnormality cause or predicting abnormality, and recording medium wherein computer program for executing such method is recorded
PCT/JP2005/023617 WO2006070689A1 (ja) 2004-12-28 2005-12-22 半導体製造装置、当該半導体製造装置における異常の検出、異常の原因の特定或いは異常の予測を行う方法、並びに当該方法を実施するためのコンピュータプログラムを記録した記憶媒体
KR1020077014655A KR101208295B1 (ko) 2004-12-28 2005-12-22 반도체 제조 장치, 당해 반도체 제조 장치에 있어서의 이상을 검출하는 방법, 및 당해 방법을 실시하기 위한 컴퓨터 프로그램을 기록한 기억 매체
DE602005017310T DE602005017310D1 (de) 2004-12-28 2005-12-22 Halbleiter-herstellungsvorrichtung, abnormitätsdetektion in einer solchen halbleiter-herstellungsvorrichtung, verfahren zum spezifizieren der abnormitätsursache oder zur vorhersage von abnormität und aufzeichnungsmedium, worauf ein computerprogramm zist
TW094147053A TW200644121A (en) 2004-12-28 2005-12-28 Semiconductor manufacturing apparatus, abnormality detection in such semiconductor manufacturing apparatus, method for specifying abnormality cause or predicting abnormality, and recording medium wherein computer program for executing such method is

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004381364A JP4607576B2 (ja) 2004-12-28 2004-12-28 半導体製造装置

Publications (2)

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JP2006186280A JP2006186280A (ja) 2006-07-13
JP4607576B2 true JP4607576B2 (ja) 2011-01-05

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JP2004381364A Active JP4607576B2 (ja) 2004-12-28 2004-12-28 半導体製造装置

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JP (1) JP4607576B2 (zh)
CN (1) CN100536076C (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2187283B1 (en) * 2008-02-27 2014-08-13 Mitsubishi Hitachi Power Systems, Ltd. Plant state monitoring method, plant state monitoring computer program, and plant state monitoring apparatus
CN102194655B (zh) * 2010-03-15 2013-04-10 中芯国际集成电路制造(上海)有限公司 半导体工艺机台参数优化调整的方法
JP5026549B2 (ja) * 2010-04-08 2012-09-12 シャープ株式会社 加熱制御システム、それを備えた成膜装置、および温度制御方法
CN102709206B (zh) * 2012-01-12 2015-06-17 上海华力微电子有限公司 控制晶圆生产过程异常的自动缺陷扫描抽检方法及装置
CN103871933A (zh) * 2014-03-17 2014-06-18 上海华虹宏力半导体制造有限公司 参数监测方法
JP6316703B2 (ja) * 2014-08-19 2018-04-25 東京エレクトロン株式会社 基板処理装置および基板処理方法
CN110050125B (zh) * 2017-03-17 2022-03-01 株式会社荏原制作所 信息处理装置、信息处理系统、信息处理方法、基板处理装置
KR102518079B1 (ko) 2017-03-17 2023-04-06 가부시키가이샤 에바라 세이사꾸쇼 정보 처리 장치, 정보 처리 시스템, 정보 처리 방법, 프로그램, 기판 처리 장치, 기준 데이터 결정 장치 및 기준 데이터 결정 방법
JP6789871B2 (ja) * 2017-03-31 2020-11-25 株式会社荏原製作所 半導体製造装置の動作に関する表示を制御する方法を実行するプログラム、当該方法及び半導体製造装置の動作に関する表示を行うシステム
CN111602471A (zh) * 2018-01-23 2020-08-28 株式会社富士 等离子体发生装置和信息处理方法
KR102260747B1 (ko) * 2018-03-29 2021-06-07 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 제어 시스템 및 반도체 장치의 제조 방법
CN114270490A (zh) * 2019-09-25 2022-04-01 株式会社国际电气 基板处理装置、半导体器件的制造方法以及程序
CN111308923A (zh) * 2019-09-29 2020-06-19 深圳市纳设智能装备有限公司 一种cvd设备的控制方法及控制装置
CN113811634B (zh) * 2019-12-17 2023-04-04 株式会社爱发科 测定异常检测装置及测定异常检测方法
CN111579172B (zh) * 2020-05-18 2022-04-26 中国科学院微电子研究所 反应腔室泄漏监测方法以及装置、半导体设备系统
JP7467261B2 (ja) 2020-06-30 2024-04-15 東京エレクトロン株式会社 異常検知装置、半導体製造装置及び異常検知方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154244A (ja) * 1997-08-01 1999-02-26 Kokusai Electric Co Ltd 熱処理炉の加熱用ヒータ断線検出方法及びその装置
JPH11233293A (ja) * 1998-02-13 1999-08-27 Kokusai Electric Co Ltd プラズマ処理方法及びプラズマｃｖｄ装置
JP2004152996A (ja) * 2002-10-30 2004-05-27 Tokyo Electron Ltd 熱処理装置及び熱処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154244A (ja) * 1997-08-01 1999-02-26 Kokusai Electric Co Ltd 熱処理炉の加熱用ヒータ断線検出方法及びその装置
JPH11233293A (ja) * 1998-02-13 1999-08-27 Kokusai Electric Co Ltd プラズマ処理方法及びプラズマｃｖｄ装置
JP2004152996A (ja) * 2002-10-30 2004-05-27 Tokyo Electron Ltd 熱処理装置及び熱処理方法

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Publication number Publication date
CN101095214A (zh) 2007-12-26
JP2006186280A (ja) 2006-07-13
CN100536076C (zh) 2009-09-02

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