JP4604121B2 - イメージセンサと組み合わされた表示デバイス - Google Patents
イメージセンサと組み合わされた表示デバイス Download PDFInfo
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- JP4604121B2 JP4604121B2 JP2008556339A JP2008556339A JP4604121B2 JP 4604121 B2 JP4604121 B2 JP 4604121B2 JP 2008556339 A JP2008556339 A JP 2008556339A JP 2008556339 A JP2008556339 A JP 2008556339A JP 4604121 B2 JP4604121 B2 JP 4604121B2
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/1525—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with charge transfer within the image-sensor, e.g. time delay and integration
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/141—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light conveying information used for selecting or modulating the light emitting or modulating element
- G09G2360/142—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light conveying information used for selecting or modulating the light emitting or modulating element the light being detected by light detection means within each pixel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Human Computer Interaction (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Position Input By Displaying (AREA)
Description
なお、IPHOTOは、フォトダイオードD1に流れる電流であり、tINTは、積分期間の時間であり、CTは、積分ノードにおける総電気容量である。積分ノードにおける総電気容量は、積分キャパシタC1の電気容量、フォトダイオードD1の自己電気容量、トランジスタM1のゲート電気容量、および、トランジスタM2のゲート−ソース電気容量の和によって与えられる。積分ノード11における電圧、つまり、トランジスタM1のゲートにおける電圧はこのようにトランジスタM1のしきい電圧よりも大きく低下する。このため、トランジスタM1が、誤ってオンになったり、通電したりするおそれはない。
VRS.HおよびVRS.Lは、それぞれ、行選択信号の高電位および低電位を示す。また、VRS.HおよびVRS.Lは、VDDおよびVSSと同じであってもよい。積分ノード11における電位は、トランジスタM1のしきい電圧より高くなる。このため、トランジスタM1は、スイッチをオンにし、トランジスタM3とともに、列出力における出力電圧を供給するためのソース・フォロワ増幅器を形成する。当該列出力は、積分段階の間に積分されるフォトダイオード電流を示すとともに、フォトダイオードD1における入射光強度を示す。
なお、VDは、フォトダイオードD1の順電圧であり、その他の変数については、上述の通りである。再び、トランジスタM1のゲートの電圧は、トランジスタM1のしきい電圧よりも大きく低下する。従って、トランジスタM1は、誤ってオンになることはない。
上記変数は、すでに定義済みである(ただし、トランジスタM2のソース−ゲート電気容量は、もはや、CTには含まれない)。積分ノード11の電位は、トランジスタM1のしきい電圧よりも上昇するので、トランジスタM1は、列の末端にあるトランジスタM3とともに、ソース・フォロワ増幅器として動作する。列出力に供給される出力電圧は、積分段階の間に積分されたフォトダイオード電流を示すとともに、フォトダイオードD1における光入射の強度を示す。
Claims (26)
- 複数のデバイス素子を備え、イメージセンサと組み合わされた表示デバイスであって、
上記デバイス素子は、行および列のアレイとして構成され、
第1セットの上記デバイス素子それぞれが、
データ入力を有する表示画素を備え、各列の上記データ入力は、各列データ線に接続されている構成であり、
第2セットの上記デバイス素子それぞれが、
光検出素子を備えるイメージセンサ素子と、半導体増幅素子と、積分キャパシタとを備え、該積分キャパシタは、上記増幅素子の制御電極、および、上記光検出素子の第1の電極に接続されている第1の電極、ならびに、制御入力に接続された第2の電極を有し、上記第2の電極は、検知段階の間、上記増幅素子を動作させない第1の電圧であって、上記光検出素子からの光電流を上記キャパシタによって積分可能にするための第1の電圧を受け、また読み取り段階の間、上記増幅素子を動作させる第2の電圧を受けるように構成されており、
上記増幅素子それぞれは、上記列データ線の対の間に接続されている主伝導経路を有し、
上記増幅素子それぞれは、制御電極しきい絶対電圧を有し、上記制御電極しきい絶対電圧より低くなると上記増幅素子が動作しなくなるように構成されており、
上記光電流が、上記検知段階の間、上記制御電極における上記電圧の絶対値が上記しきい絶対電圧よりも低くなり続けるように構成されているデバイス。 - 上記光電流の極性は、上記検知段階の間、上記制御電極における上記電圧の上記絶対値を下げるようになっている請求項1に記載のデバイス。
- 上記第1セットは、上記デバイス素子の全てを含む請求項1に記載のデバイス。
- 上記第2セットに含まれるデバイス素子は、上記デバイス素子の全てよりも少ない請求項1に記載のデバイス。
- 上記センサ素子それぞれは、上記デバイス素子のグループ毎に配置されている請求項1に記載のデバイス。
- 上記検知段階および上記読み取り段階は、周期的に繰り返される請求項1に記載のデバイス。
- 上記光検出素子それぞれは、フォトダイオードである請求項1に記載のデバイス。
- 上記フォトダイオードそれぞれは、横型フォトダイオードである請求項7に記載のデバイス。
- 上記フォトダイオードそれぞれは、薄膜ダイオードである請求項7に記載のデバイス。
- 上記増幅素子それぞれは、電圧フォロワ構成を含む請求項1に記載のデバイス。
- 上記増幅素子それぞれは、第1のトランジスタを含む請求項1に記載のデバイス。
- 上記第1のトランジスタそれぞれは、薄膜トランジスタである請求項11に記載のデバイス。
- 上記第1のトランジスタそれぞれは、電界効果トランジスタである請求項11に記載のデバイス。
- 上記第1のトランジスタそれぞれは、ソース・フォロワとして接続されており、上記制御電極は、トランジスタゲートを含み、および、上記主伝導経路は、ソース・ドレイン経路を含む請求項13に記載のデバイス。
- 上記センサ素子それぞれは、リセット入力に接続された制御電極を有し、かつ、リセット段階の間、所定の電圧になるまで上記キャパシタを充電するように構成された半導体リセット素子を含む請求項1に記載のデバイス。
- 上記リセット素子それぞれは、上記キャパシタの上記第1の電極と、所定の電圧源との間に接続された主伝導経路を有する請求項15に記載のデバイス。
- 上記リセット素子それぞれは、第2のトランジスタを含む請求項15に記載のデバイス。
- 上記第2のトランジスタそれぞれは、薄膜トランジスタである請求項17に記載のデバイス。
- 行制御入力を含み、該行制御入力それぞれは、上記センサ素子の各行の上記制御入力に接続されている請求項1に記載のデバイス。
- 行リセット入力を含み、該行リセット入力それぞれは、上記センサ素子の各行の上記リセット入力に接続されている請求項15に記載のデバイス。
- 上記列データ線の少なくともいくつかのそれぞれは、各バイアス用素子に接続されている請求項1に記載のデバイス。
- それぞれのバイアス用素子は、第3のトランジスタを含む請求項21に記載のデバイス。
- それぞれの第3のトランジスタは、薄膜トランジスタである請求項22に記載のデバイス。
- アクティブマトリクスアドレッシング構成を含む請求項1に記載のデバイス。
- 上記表示画素は、液晶画素である請求項1に記載のデバイス。
- 上記アクティブマトリクスアドレッシング構成は、上記表示画素の対応する行の線ブランキング期間の間、上記センサ素子のそれぞれの行をアドレスするように構成されている請求項24に記載のデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0611536A GB2439098A (en) | 2006-06-12 | 2006-06-12 | Image sensor and display |
PCT/JP2007/062186 WO2007145347A1 (en) | 2006-06-12 | 2007-06-11 | Combined image sensor and display device |
Publications (2)
Publication Number | Publication Date |
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JP2009540396A JP2009540396A (ja) | 2009-11-19 |
JP4604121B2 true JP4604121B2 (ja) | 2010-12-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008556339A Expired - Fee Related JP4604121B2 (ja) | 2006-06-12 | 2007-06-11 | イメージセンサと組み合わされた表示デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US8139055B2 (ja) |
EP (1) | EP2050269B1 (ja) |
JP (1) | JP4604121B2 (ja) |
KR (1) | KR101095720B1 (ja) |
CN (1) | CN101467442B (ja) |
GB (1) | GB2439098A (ja) |
WO (1) | WO2007145347A1 (ja) |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7053967B2 (en) | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
US7009663B2 (en) | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
WO2003073159A1 (en) | 2002-02-20 | 2003-09-04 | Planar Systems, Inc. | Light sensitive display |
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CN101467442A (zh) | 2009-06-24 |
GB2439098A (en) | 2007-12-19 |
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US20100231562A1 (en) | 2010-09-16 |
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