JP4594314B2 - SiO蒸着材、SiO原料用Si粉末およびSiOの製造方法 - Google Patents

SiO蒸着材、SiO原料用Si粉末およびSiOの製造方法 Download PDF

Info

Publication number
JP4594314B2
JP4594314B2 JP2006531640A JP2006531640A JP4594314B2 JP 4594314 B2 JP4594314 B2 JP 4594314B2 JP 2006531640 A JP2006531640 A JP 2006531640A JP 2006531640 A JP2006531640 A JP 2006531640A JP 4594314 B2 JP4594314 B2 JP 4594314B2
Authority
JP
Japan
Prior art keywords
sio
vapor deposition
hydrogen gas
powder
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006531640A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2006025194A1 (ja
Inventor
信吾 木崎
和雄 西岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Titanium Technologies Co Ltd
Original Assignee
Osaka Titanium Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Titanium Technologies Co Ltd filed Critical Osaka Titanium Technologies Co Ltd
Publication of JPWO2006025194A1 publication Critical patent/JPWO2006025194A1/ja
Application granted granted Critical
Publication of JP4594314B2 publication Critical patent/JP4594314B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10Glass or silica

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
JP2006531640A 2004-09-01 2005-08-09 SiO蒸着材、SiO原料用Si粉末およびSiOの製造方法 Expired - Fee Related JP4594314B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004253733 2004-09-01
JP2004253733 2004-09-01
PCT/JP2005/014552 WO2006025194A1 (fr) 2004-09-01 2005-08-09 MATIÈRE DE DÉPÔT DE SiO, POUDRE DE Si SERVANT DE MATIÈRE PREMIÈRE POUR DU SiO ET PROCÉDÉ SERVANT À PRODUIRE DU SiO

Publications (2)

Publication Number Publication Date
JPWO2006025194A1 JPWO2006025194A1 (ja) 2008-05-08
JP4594314B2 true JP4594314B2 (ja) 2010-12-08

Family

ID=35999854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006531640A Expired - Fee Related JP4594314B2 (ja) 2004-09-01 2005-08-09 SiO蒸着材、SiO原料用Si粉末およびSiOの製造方法

Country Status (5)

Country Link
US (1) US20070259113A1 (fr)
EP (1) EP1792874A4 (fr)
JP (1) JP4594314B2 (fr)
CN (1) CN101014534B (fr)
WO (1) WO2006025194A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4374330B2 (ja) * 2005-06-16 2009-12-02 株式会社大阪チタニウムテクノロジーズ 一酸化珪素系蒸着材料及びその製造方法
US20080215076A1 (en) * 2005-11-14 2008-09-04 Sentinel Group, Llc Gastro-intestinal therapeutic device and method
US7947377B2 (en) * 2007-06-20 2011-05-24 Dai Nippon Printing Co., Ltd. Powder mixture to be made into evaporation source material for use in ion plating, evaporation source material for use in ion plating and method of producing the same, and gas barrier sheet and method of producing the same
JP4809926B2 (ja) * 2009-10-22 2011-11-09 株式会社大阪チタニウムテクノロジーズ リチウムイオン二次電池用負極活物質
JP5379026B2 (ja) * 2010-01-07 2013-12-25 信越化学工業株式会社 非水電解質二次電池負極材用珪素酸化物及び非水電解質二次電池負極材用珪素酸化物の製造方法並びにリチウムイオン二次電池及び電気化学キャパシタ
US9601228B2 (en) 2011-05-16 2017-03-21 Envia Systems, Inc. Silicon oxide based high capacity anode materials for lithium ion batteries
US10553871B2 (en) 2012-05-04 2020-02-04 Zenlabs Energy, Inc. Battery cell engineering and design to reach high energy
US9780358B2 (en) 2012-05-04 2017-10-03 Zenlabs Energy, Inc. Battery designs with high capacity anode materials and cathode materials
US10020491B2 (en) 2013-04-16 2018-07-10 Zenlabs Energy, Inc. Silicon-based active materials for lithium ion batteries and synthesis with solution processing
US10886526B2 (en) 2013-06-13 2021-01-05 Zenlabs Energy, Inc. Silicon-silicon oxide-carbon composites for lithium battery electrodes and methods for forming the composites
US11476494B2 (en) 2013-08-16 2022-10-18 Zenlabs Energy, Inc. Lithium ion batteries with high capacity anode active material and good cycling for consumer electronics
DE102014007354B4 (de) * 2014-05-19 2019-05-29 Viridis.iQ GmbH Verfahren zum Aufbereiten von Rückständen aus der mechanischen Bearbeitung von Siliziumprodukten
CN106744985B (zh) * 2016-12-30 2019-01-08 天津惠利科技股份有限公司 一氧化硅纳米材料及其制备方法
CN108793169A (zh) * 2017-03-27 2018-11-13 储晞 一种回收利用金刚线切割硅料副产硅泥的方法装置和系统
US11094925B2 (en) 2017-12-22 2021-08-17 Zenlabs Energy, Inc. Electrodes with silicon oxide active materials for lithium ion cells achieving high capacity, high energy density and long cycle life performance
WO2022059316A1 (fr) * 2020-09-16 2022-03-24 株式会社大阪チタニウムテクノロジーズ Matériau générateur de monoxyde de silicium gazeux et procédé de génération continue de monoxyde de silicium gazeux

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251117A (ja) * 1983-12-30 1985-12-11 フアウエ−ベ−・フラツホグラスコンビナ−ト・トルガウ 極度に高い蒸発速度の蒸発物質
JPS6227318A (ja) * 1985-07-29 1987-02-05 Kawasaki Steel Corp Sio微粉末の製造方法およびその装置
JP2003192326A (ja) * 2001-12-26 2003-07-09 Shin Etsu Chem Co Ltd 多孔質酸化珪素粉末及びその製造方法
WO2006011290A1 (fr) * 2004-07-29 2006-02-02 Sumitomo Titanium Corporation POUDRE DE SiO POUR BATTERIE SECONDAIRE ET SON PROCÉDÉ DE FABRICATION

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3191320B2 (ja) * 1991-05-30 2001-07-23 東洋紡績株式会社 プラスチック被覆用材料および被覆プラスチックフィルム
JPH0925111A (ja) * 1995-07-10 1997-01-28 Shin Etsu Chem Co Ltd 低酸素けい素造粒物、その製造方法および窒化けい素の製造方法
US5985229A (en) * 1995-09-21 1999-11-16 Toagosei Co., Ltd. Solid silica derivative and process for producing the same
JP3760498B2 (ja) * 1996-01-24 2006-03-29 東亞合成株式会社 Si−H結合含有シリカ誘導体微粒子およびその製造方法
US6083644A (en) * 1996-11-29 2000-07-04 Seiko Instruments Inc. Non-aqueous electrolyte secondary battery
JP3865033B2 (ja) * 2000-02-04 2007-01-10 信越化学工業株式会社 酸化珪素粉末の連続製造方法及び連続製造装置
EP1318207A4 (fr) * 2000-08-31 2006-08-16 Sumitomo Titanium Corp Materiau de depot par evaporation sous vide de monoxyde de silicium, son procede de production, la matiere premiere pour sa production et appareil de production
JP3488419B2 (ja) * 2000-08-31 2004-01-19 住友チタニウム株式会社 一酸化けい素蒸着材料の製造方法
DE10353995A1 (de) * 2003-11-19 2005-06-09 Degussa Ag Nanoskaliges, kristallines Siliciumpulver

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251117A (ja) * 1983-12-30 1985-12-11 フアウエ−ベ−・フラツホグラスコンビナ−ト・トルガウ 極度に高い蒸発速度の蒸発物質
JPS6227318A (ja) * 1985-07-29 1987-02-05 Kawasaki Steel Corp Sio微粉末の製造方法およびその装置
JP2003192326A (ja) * 2001-12-26 2003-07-09 Shin Etsu Chem Co Ltd 多孔質酸化珪素粉末及びその製造方法
WO2006011290A1 (fr) * 2004-07-29 2006-02-02 Sumitomo Titanium Corporation POUDRE DE SiO POUR BATTERIE SECONDAIRE ET SON PROCÉDÉ DE FABRICATION

Also Published As

Publication number Publication date
EP1792874A4 (fr) 2009-07-22
JPWO2006025194A1 (ja) 2008-05-08
WO2006025194A1 (fr) 2006-03-09
EP1792874A1 (fr) 2007-06-06
US20070259113A1 (en) 2007-11-08
CN101014534A (zh) 2007-08-08
CN101014534B (zh) 2011-05-18

Similar Documents

Publication Publication Date Title
JP4594314B2 (ja) SiO蒸着材、SiO原料用Si粉末およびSiOの製造方法
TW583326B (en) Silicon monoxide vapor deposition material, and process, and apparatus for producing the same
TW406058B (en) Process for producing high-purity ruthenium, and high-purity ruthenium material for thin film deposition
WO2000004202A1 (fr) Procede de preparation d'une cible de pulverisation cathodique en ruthenium tres pur
JP4749502B2 (ja) SiOxならびにこれを用いたバリアフィルム用蒸着材およびリチウムイオン二次電池用負極活物質
JP6573629B2 (ja) 高純度耐熱金属粉体、及び無秩序な組織を有し得るスパッタリングターゲットにおけるその使用
JP5074764B2 (ja) SiO蒸着材
JP2013536316A (ja) カリウム/モリブデン複合金属粉末、粉末ブレンド、その生成物、及び光電池セルを製造する方法
JP2000063171A (ja) 多結晶MgO蒸着材
KR950703668A (ko) 고융점 금속 실리사이드 타겟, 그의 제조방법, 고융점 금속 실리사이드 박막 및 반도체장치(high melting point metallic silicide target and method for producing the same, high melting point metallic silicide film and semicomductor device)
TW200422413A (en) Sputtering target and process for producing the same
KR100852533B1 (ko) SiO증착재, SiO 원료용 Si분말 및 SiO의제조방법
JP3488419B2 (ja) 一酸化けい素蒸着材料の製造方法
KR100852534B1 (ko) SiO증착재, 원료용 Si분말 및 SiO증착재의제조방법
WO2018021105A1 (fr) CIBLE DE PULVÉRISATION DE Cu-Ga ET PROCÉDÉ DE PRODUCTION DE CIBLE DE PULVÉRISATION DE Cu-Ga
JP2002105632A (ja) タングステン粉末およびその製造方法ならびにスパッタ・ターゲットおよび切削工具
JP2002194535A (ja) 高純度一酸化けい素蒸着材料及びその製造装置
JP2006069811A (ja) 単結晶酸化マグネシウム焼結体及びプラズマディスプレイパネル用保護膜
JPH02166276A (ja) 高融点金属シリサイド製ターゲットおよびその製造方法
CN109563614A (zh) Cu-Ga溅射靶及Cu-Ga溅射靶的制造方法
WO2021200868A1 (fr) Poudre de nitrure de silicium et procédé pour produire un corps fritté de nitrure de silicium
JPH0813140A (ja) インジウム酸化物系スパッタリング用ターゲットおよびその製造方法ならびにインジウム酸化物系膜およびインジウム酸化物系膜の製造方法
JPH02247379A (ja) シリサイドターゲットの製造方法
JP3009281B2 (ja) チタン系粉末の製造方法
JP2605847B2 (ja) 酸化亜鉛ウイスカーの製造法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100629

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100914

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100916

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130924

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees