KR100852533B1 - SiO증착재, SiO 원료용 Si분말 및 SiO의제조방법 - Google Patents
SiO증착재, SiO 원료용 Si분말 및 SiO의제조방법 Download PDFInfo
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- KR100852533B1 KR100852533B1 KR1020077002807A KR20077002807A KR100852533B1 KR 100852533 B1 KR100852533 B1 KR 100852533B1 KR 1020077002807 A KR1020077002807 A KR 1020077002807A KR 20077002807 A KR20077002807 A KR 20077002807A KR 100852533 B1 KR100852533 B1 KR 100852533B1
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- South Korea
- Prior art keywords
- sio
- hydrogen gas
- vapor deposition
- powder
- gas content
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
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- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Abstract
Description
구분 | SiO증착재의 수소 가스 함유량(ppm) | 성막속도 (Å/sec) |
비교예 | 70 | 180 |
110 | 180 | |
본 발명예 | 120 | 210 |
170 | 560 | |
220 | 780 |
Claims (5)
- 수소 가스 함유량이 120ppm 이상인 것을 특징으로 하는 SiO.
- 수소 가스 함유량이 120ppm 이상인 것을 특징으로 하는 SiO증착재.
- 수소 가스 함유량이 150ppm 이상인 것을 특징으로 하는 SiO증착재.
- Si분말의 수소 가스 함유량이 30ppm 이상인 것을 특징으로 하는 SiO의 원료용 Si분말.
- 수소 가스 함유량이 30ppm 이상인 Si분말과 SiO2분말을 혼합하고, 1250∼1350℃로 가열하고, 기화시킨 후, 석출 기체로 석출시키는 것을 특징으로 하는 SiO의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077002807A KR100852533B1 (ko) | 2004-09-01 | 2005-08-09 | SiO증착재, SiO 원료용 Si분말 및 SiO의제조방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2004-00253733 | 2004-09-01 | ||
KR1020077002807A KR100852533B1 (ko) | 2004-09-01 | 2005-08-09 | SiO증착재, SiO 원료용 Si분말 및 SiO의제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20070032044A KR20070032044A (ko) | 2007-03-20 |
KR100852533B1 true KR100852533B1 (ko) | 2008-08-14 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020077002807A KR100852533B1 (ko) | 2004-09-01 | 2005-08-09 | SiO증착재, SiO 원료용 Si분말 및 SiO의제조방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100852533B1 (ko) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0925111A (ja) * | 1995-07-10 | 1997-01-28 | Shin Etsu Chem Co Ltd | 低酸素けい素造粒物、その製造方法および窒化けい素の製造方法 |
KR20030024775A (ko) * | 2001-05-11 | 2003-03-26 | 도요 세이칸 가부시키가이샤 | 규소 산화막 |
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2005
- 2005-08-09 KR KR1020077002807A patent/KR100852533B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0925111A (ja) * | 1995-07-10 | 1997-01-28 | Shin Etsu Chem Co Ltd | 低酸素けい素造粒物、その製造方法および窒化けい素の製造方法 |
KR20030024775A (ko) * | 2001-05-11 | 2003-03-26 | 도요 세이칸 가부시키가이샤 | 규소 산화막 |
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KR20070032044A (ko) | 2007-03-20 |
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