JP4581478B2 - 窒化物半導体の製造方法 - Google Patents

窒化物半導体の製造方法 Download PDF

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JP4581478B2
JP4581478B2 JP2004142948A JP2004142948A JP4581478B2 JP 4581478 B2 JP4581478 B2 JP 4581478B2 JP 2004142948 A JP2004142948 A JP 2004142948A JP 2004142948 A JP2004142948 A JP 2004142948A JP 4581478 B2 JP4581478 B2 JP 4581478B2
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nitride semiconductor
growth
substrate
region
grown
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JP2005327821A5 (enExample
JP2005327821A (ja
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准也 成田
克彦 福家
守生 藤川
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Nichia Corp
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Nichia Corp
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JP2004142948A 2004-05-12 2004-05-12 窒化物半導体の製造方法 Expired - Fee Related JP4581478B2 (ja)

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JP2004142948A JP4581478B2 (ja) 2004-05-12 2004-05-12 窒化物半導体の製造方法

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JP2004142948A JP4581478B2 (ja) 2004-05-12 2004-05-12 窒化物半導体の製造方法

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JP2005327821A JP2005327821A (ja) 2005-11-24
JP2005327821A5 JP2005327821A5 (enExample) 2007-06-28
JP4581478B2 true JP4581478B2 (ja) 2010-11-17

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8674375B2 (en) 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
JP5454647B2 (ja) * 2005-10-28 2014-03-26 日亜化学工業株式会社 窒化物半導体基板の製造方法、窒化物半導体基板及び発光素子
JP2007151807A (ja) * 2005-12-05 2007-06-21 Univ Meijo 半導体発光素子による光線治療方法、及び半導体発光素子による光線治療システム
JP4793824B2 (ja) * 2006-08-28 2011-10-12 シャープ株式会社 窒化物半導体層の形成方法
US9318327B2 (en) * 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
JP2008294156A (ja) * 2007-05-23 2008-12-04 Mitsubishi Chemicals Corp 半導体成膜用基板の製造方法
JP5489117B2 (ja) * 2009-09-01 2014-05-14 シャープ株式会社 窒化物半導体素子、窒化物半導体素子の製造方法、窒化物半導体層の製造方法および窒化物半導体発光素子
EP2477236A4 (en) * 2009-09-07 2015-07-22 Panasonic Ip Man Co Ltd MULTILAYER NITRIDE SEMICONDUCTOR STRUCTURE, METHOD FOR THE PRODUCTION THEREOF AND LIGHT-EMITTING NITRIDE-SEMICONDUCTOR ELEMENT
WO2011129246A1 (ja) * 2010-04-13 2011-10-20 並木精密宝石株式会社 単結晶基板、結晶性膜付き単結晶基板、結晶性膜、結晶性膜付き単結晶基板の製造方法、結晶性基板の製造方法、及び素子製造方法
JP2013058741A (ja) * 2011-08-17 2013-03-28 Hitachi Cable Ltd 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート
JP5212529B2 (ja) * 2011-09-02 2013-06-19 三菱化学株式会社 半導体成膜用基板の製造方法
JP5948698B2 (ja) * 2012-04-13 2016-07-06 パナソニックＩｐマネジメント株式会社 紫外発光素子およびその製造方法
JP5891390B2 (ja) 2012-10-05 2016-03-23 パナソニックＩｐマネジメント株式会社 窒化物半導体構造、積層構造、および窒化物半導体発光素子
JP7638488B2 (ja) * 2021-02-01 2025-03-04 豊田合成株式会社 半導体素子および半導体素子の製造方法
WO2025115743A1 (ja) * 2023-11-30 2025-06-05 京セラ株式会社 半導体基板並びにその製造方法および製造装置、半導体デバイス

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3550070B2 (ja) * 1999-03-23 2004-08-04 三菱電線工業株式会社 ＧａＮ系化合物半導体結晶、その成長方法及び半導体基材
JP3982788B2 (ja) * 2000-09-14 2007-09-26 独立行政法人理化学研究所 半導体層の形成方法
JP3849855B2 (ja) * 2001-11-12 2006-11-22 日亜化学工業株式会社 窒化物半導体基板の製造方法

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